专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5151255A Method for forming window material for solar cells and method for producing amorphous silicon solar cell 失效
标题翻译：太阳能电池窗材料的形成方法及非晶硅太阳能电池的制造方法
公开(公告)号：US5151255A
公开(公告)日：1992-09-29
申请号：US593480
申请日：1990-10-03
申请人： Nobuhiro Fukuda , Sadao Kobayashi , Kenji Miyachi , Hidemi Takenouchi , Yoji Kawahara , Takayuki Teramoto
发明人： Nobuhiro Fukuda , Sadao Kobayashi , Kenji Miyachi , Hidemi Takenouchi , Yoji Kawahara , Takayuki Teramoto
IPC分类号： H01L31/04 , H01L31/20
CPC分类号： H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A method for forming a dihydride rich amorphous silicon semiconductor film suitable for use as a window material of solar cells only from a silicon material, which comprises decomposing a gaseous mixture composed of disilane, a dopant capable of imparting p-type electrical conductivity and a diluent gas by applying a glow discharge energy, and thereby forming a semiconductor film having an optical band gap of at least 1.8 eV, preferably more than 1.9 eV, on a substrate.
摘要翻译：一种用于形成适合仅用作硅材料的太阳能电池窗材料的二氢化氢非晶硅半导体膜的方法，其包括分解由乙硅烷组成的气态混合物，能赋予p型导电性的掺杂剂和稀释剂通过施加辉光放电能量，从而在衬底上形成具有至少1.8eV，优选大于1.9eV的光学带隙的半导体膜。

2. 发明授权

US5306572A EL element comprising organic thin film 失效
标题翻译： EL元件包括有机薄膜
公开(公告)号：US5306572A
公开(公告)日：1994-04-26
申请号：US993882
申请日：1992-12-23
申请人： Yutaka Ohashi , Nobuhiro Fukuda , Atsuhiko Nitta , Sadao Kobayashi
发明人： Yutaka Ohashi , Nobuhiro Fukuda , Atsuhiko Nitta , Sadao Kobayashi
IPC分类号： H01L51/52 , H05B33/10 , H05B33/14 , B32B9/00
CPC分类号： H05B33/14 , H01L51/5206 , H01L51/5221 , H05B33/10 , H01L51/5088 , H01L51/5092 , Y10S428/917
摘要： Herein disclosed are organic thin film EL element having layer structures each of which comprises at least one organic thin film sandwiched between two electrodes, at least one of which is a metal thin film or one of which is a metal thin film and the other of which is a transparent conductive inorganic thin film, and an optional thin film of an inorganic semiconductor positioned between the transparent conductive thin film and the organic thin film, wherein an interfacial layer is fromed between the organic thin film and the metal thin film adjacent to the organic thin film by treating the organic thin film and/or the metal thin film with an organic phosphorus atom-containing compound; and/or wherein an interfacial layer is formed between the organic thin film and the inorganic thin film adjacent to the inorganic thin film by treating the organic thin film and/or the inorganic thin film with a silane-coupling agent. In the EL element, the metal thin film formed on the organic thin film has low unevenness, the metal thin film is strongly adhered to the organic thin film.
摘要翻译：这里公开了具有层结构的有机薄膜EL元件，每个层结构包括夹在两个电极之间的至少一个有机薄膜，其中至少一个是金属薄膜或其中一个是金属薄膜，另一个是金属薄膜是透明导电性无机薄膜，和位于透明导电薄膜与有机薄膜之间的无机半导体薄膜，其中界面层从有机薄膜与邻近有机薄膜的金属薄膜之间形成用有机磷原子化合物处理有机薄膜和/或金属薄膜的薄膜; 和/或其中通过用硅烷偶联剂处理有机薄膜和/或无机薄膜，在有机薄膜和与无机薄膜相邻的无机薄膜之间形成界面层。在EL元件中，形成在有机薄膜上的金属薄膜具有低的不均匀性，金属薄膜牢固地附着在有机薄膜上。

3. 发明授权

US4469507A Production process of ferromagnetic iron powder 失效
标题翻译：铁磁铁粉的生产工艺
公开(公告)号：US4469507A
公开(公告)日：1984-09-04
申请号：US460638
申请日：1983-01-24
申请人： Haruo Sekiguchi , Kazufuyu Sudoh , Sadao Kobayashi , Nobuhiro Fukuda
发明人： Haruo Sekiguchi , Kazufuyu Sudoh , Sadao Kobayashi , Nobuhiro Fukuda
IPC分类号： B22F1/02 , H01F1/06 , C22C1/04
CPC分类号： B22F1/02 , H01F1/065
摘要： Disclosed herein is a process for producing ferromagnetic iron powder, which process comprises adding and mixing zinc borate with .alpha.-FeOOH or .alpha.-Fe.sub.2 O.sub.3 without dissolving the former, heating the thus-obtained mixture to 350.degree. C. or higher in a non-reducing atmosphere and then reducing the thus-heated mixture.
摘要翻译：本文公开了一种生产铁磁性铁粉的方法，该方法包括在不溶解前者的情况下加入并混合硼酸锌与α-FeOOH或α-Fe2O3，将如此得到的混合物加热至350℃或更高的非还原气氛，然后还原如此加热的混合物。

4. 发明授权

US06471740B2 Air filter 有权
标题翻译：空气过滤器
公开(公告)号：US06471740B2
公开(公告)日：2002-10-29
申请号：US09736647
申请日：2000-12-13
申请人： Sadao Kobayashi , Masayuki Imafuku , Yoshihide Wakayama
发明人： Sadao Kobayashi , Masayuki Imafuku , Yoshihide Wakayama
IPC分类号： B01D4600
CPC分类号： B01D46/0001 , B01D39/10 , B01D39/1623 , B01D39/2017 , B01D46/06 , B01D46/10 , B01D2239/04 , B01D2239/0428 , B01D2239/0457 , B01D2239/0464 , B01D2239/0492 , B01D2239/0618 , B01D2239/086 , B01D2239/10 , B01D2271/02 , B01D2279/51 , D04H1/4218 , D06M13/02 , D06M13/11 , D06M13/148 , D06M13/224 , D06M15/227 , D06M15/507 , F24F3/161 , F24F13/28
摘要： A material not releasing gaseous organic substances during use is used as a filter medium and a sealing material for tightly sealing between the medium and a frame. Specifically, a synthetic paraffin not containing an aliphatic hydrocarbon having not more than 19 carbon atoms or less is used as a non-silicone type water repellent contained in a treatment agent for forming fibers into a cloth-like filter medium. A carboxylic acid ester having 400 or more molecular weight is used as a plasticizer and a phenolic compound having 300 or more molecular weight is used as an antioxidant to be added to the treatment agent and the sealing material. This enables that the gaseous organic substances are not present in a clean room, a semiconductor production apparatus or the like. Further, if the filter medium and the sealing material are formed of a material not releasing organic phosphorus compounds and boron compounds in the air, a clean room and a local facility particularly suitable for use in the production of semiconductors are provided.
摘要翻译：使用在使用期间不释放气态有机物质的材料用作过滤介质和用于在介质和框架之间紧密密封的密封材料。具体地说，不含有不超过19个碳原子的脂肪族烃的合成石蜡用作用于将纤维形成布状过滤介质的处理剂中所含的非硅氧烷型防水剂。使用具有400以上分子量的羧酸酯作为增塑剂，使用具有300以上分子量的酚类化合物作为添加到处理剂和密封材料中的抗氧化剂。这使得气体有机物质不存在于洁净室，半导体制造装置等中。此外，如果过滤介质和密封材料由空气中不释放有机磷化合物和硼化合物的材料形成，则提供特别适合用于制造半导体的洁净室和本地设备。

5. 发明授权

US4995286A Apparatus for removing flash from molded products 失效
标题翻译：用于从模制产品中去除闪光的装置
公开(公告)号：US4995286A
公开(公告)日：1991-02-26
申请号：US196133
申请日：1988-09-19
申请人： Sadao Kobayashi , Hidemi Tomono , Kazunobu Yoshida
发明人： Sadao Kobayashi , Hidemi Tomono , Kazunobu Yoshida
IPC分类号： B23B5/00 , B26F3/08 , B29C37/02
CPC分类号： B29C37/02 , Y10T82/16016 , Y10T82/16081 , Y10T82/16967
摘要： An automatic flash removing apparatus, according to the present invention, comprises a flash removing cutter edge carried by a cutter holder. The cutter holder is movable with carrying the cutter edge relative to a molded product. On the other hand, the molded product is supported on a product support which can drive the product relative to the cutter edge so that the portion of the product having flash to be removed is placed in opposition to the cutter edge. The cutter holder is associated with a pressure regulator means for adjusting pressure to depress the cutter edge toward the product. Regulated depression pressure may avoid fluctuation of smoothness of the product after removing the flash.

6. 发明授权

US4103907A Mechanical seal 失效
标题翻译：机械密封
公开(公告)号：US4103907A
公开(公告)日：1978-08-01
申请号：US693314
申请日：1976-06-07
申请人： Hiroshi Inouye , Sadao Kobayashi
发明人： Hiroshi Inouye , Sadao Kobayashi
IPC分类号： F16J15/34
CPC分类号： F16J15/3432 , Y10S277/93
摘要： A mechanical seal comprising:Sealing elements forming a sliding seal surface for sealing action and made of material having a high heat conductivity;Surface deformation-generating grooves provided at the portion close to said sliding seal surface on the sealing elements so that a fluid film can be generated by the wedge action of surface deformations of said sliding seal surface; andGrooves for generating turbulence and increasing heat transfer area which are provided in the marginal portion, separately of the grooves for generating surface deformation, in said sealing elements so that cooling fluid fed to said sliding seal surface can be made turbulent and contact area of the cooling fluid can be increased.
摘要翻译：一种机械密封，包括：

7. 发明授权

US4036672A Method of making a junction type field effect transistor 失效
标题翻译：制造结型场效应晶体管的方法
公开(公告)号：US4036672A
公开(公告)日：1977-07-19
申请号：US683265
申请日：1976-05-05
申请人： Sadao Kobayashi
发明人： Sadao Kobayashi
IPC分类号： H01L29/80 , H01L21/20 , H01L29/04 , H01L29/808 , H01L21/74
CPC分类号： H01L29/8083 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L29/04 , Y10S148/088 , Y10S438/969
摘要： In the manufacture of a vertical structure junction type field effect transistor, the formation of a gate region is followed by an oxidation treatment of the upper surface of the gate region and then by the growth of a semiconductor layer consisting of a monocrystalline region on the channel portion and a polycrystalline region on the oxide film formed on the gate region. The existence of the oxide film on the gate region prevents the out-diffusion of the impurity doped in the gate region, preventing the lowering of the breakdown voltage, and enabling a short channel length and small series resistance of the channel.
摘要翻译：在垂直结构型场效应晶体管的制造中，栅极区域的形成之后是对栅极区域的上表面进行氧化处理，然后通过在沟道上由单晶区域构成的半导体层的生长部分和形成在栅极区域上的氧化物膜上的多晶区域。栅极区域上的氧化膜的存在防止了掺杂在栅极区域中的杂质的扩散，防止了击穿电压的降低，并且能够实现沟道的短沟道长度和小的串联电阻。

8. 发明授权

US06903264B2 Electric wire coated with polyvinyl chloride resin composition and cable 失效
标题翻译：电线涂有聚氯乙烯树脂组合物和电缆
公开(公告)号：US06903264B2
公开(公告)日：2005-06-07
申请号：US10478641
申请日：2002-05-23
申请人： Kiyoshi Watanabe , Hiroyuki Ito , Misako Saito , Teruyuki Hayashi , Naoya Hirayama , Sadao Kobayashi , Yoshihide Wakayama
发明人： Kiyoshi Watanabe , Hiroyuki Ito , Misako Saito , Teruyuki Hayashi , Naoya Hirayama , Sadao Kobayashi , Yoshihide Wakayama
IPC分类号： C08K3/26 , C08K5/098 , C08K5/12 , C08L27/06 , C08L101/00 , H01B3/44 , H01B7/02 , H01B7/34
CPC分类号： H01B3/443 , C08K5/098 , C08L27/06
摘要： An electric wire with coating of polyvinyl chloride family resin composition is characterized by having a coating layer including polyvinyl chloride family composition obtained from adding more than one of any calcium soap, zinc soap and hydrotalcite to resin including polyvinyl chloride resin as a main constituent, and further adding thereto plasticizer so as to obtain a heat-stable vinyl chloride composition, and further adding thereto as stabilization auxiliaries high-melting-point β-diketone compound having a melting point more than 100° C. out of β-diketone compounds expressed by a general formula of R.CO.CH2.CO.R′.
摘要翻译：一种具有聚氯乙烯树脂组合物涂层的电线的特征在于具有包含聚氯乙烯家族组合物的涂层，所述组合物通过将包含聚氯乙烯树脂作为主要成分的树脂中添加多种任何钙皂，锌皂和水滑石而获得，以及进一步添加增塑剂以获得热稳定性氯乙烯组合物，并进一步添加作为稳定助剂的熔点高于100℃的高熔点β-二酮化合物，由β-二酮化合物表示，由 R.CO.CH2.CO.R'的通式。

9. 发明授权

US06799539B2 System and method for utilization of waste heat of semiconductor equipment and heat exchanger used for utilization of waste heat of semiconductor equipment 失效
标题翻译：半导体设备废热利用系统和方法及半导体设备余热利用热交换器
公开(公告)号：US06799539B2
公开(公告)日：2004-10-05
申请号：US10468362
申请日：2003-08-19
申请人： Osamu Suenaga , Sadao Kobayashi
发明人： Osamu Suenaga , Sadao Kobayashi
IPC分类号： F22D102
CPC分类号： H01L21/67109 , F28D7/16 , Y02P80/156 , Y10S165/909
摘要： An amount of energy consumption in a semiconductor fabrication facility can be reduced by using cooling water drained from a semiconductor fabrication apparatus as a heat source of another semiconductor fabrication apparatus. Cooling water of 80° C. drained from a heating furnace of a heat processing apparatus (10) is supplied to a deionized water heating apparatus (32) of a cleaning apparatus (30). The deionized water heating apparatus (32) raises a temperature of deionized water of a room temperature to 60° C. through heat exchange with the cooling water of 80° C. The cooling water, whose temperature falls to 30° C. after the heat exchange, is reutilized for cooling of the heating furnace (12).
摘要翻译：通过使用从半导体制造装置排出的冷却水作为另一半导体制造装置的热源，可以减少半导体制造设备中的能量消耗。将从加热处理装置（10）的加热炉排出的80℃的冷却水供给到清洗装置（30）的去离子水加热装置（32）。去离子水加热装置（32）通过与80℃的冷却水进行热交换，将室温下去离子水的温度升高到60℃。加热后的温度降至30℃的冷却水再次利用加热炉（12）的冷却。

10. 发明授权

US06569696B2 Device and method for manufacturing semiconductor 失效
公开(公告)号：US06569696B2
公开(公告)日：2003-05-27
申请号：US10148664
申请日：2002-06-04
申请人： Osamu Suenaga , Makoto Yamamoto , Naoki Mori , Hiromu Ito , Sadao Kobayashi
发明人： Osamu Suenaga , Makoto Yamamoto , Naoki Mori , Hiromu Ito , Sadao Kobayashi
IPC分类号： G01R3126
CPC分类号： H01L21/67248 , F24F3/161 , F24F5/0007 , H01L21/67017 , H01L21/6715
摘要： A heat exchange section (72) is provided in the middle of a circulation water path (58, 59) connecting between a temperature-controlled water tank (71) and a semiconductor manufacturing apparatus body (4) so as to perform a heat exchange with air of a clean room (3). The heat exchange section (72) is installed near an exit of an air circulation path (32) above a fan-filter unit (34) of the clean room as a temperature stabilized area off an atmosphere of the clean room (3). Additionally, as another method, a temperature of a chemical fluid from a chemical fluid tank (6) is controlled to be a temperature of the air in the clean room by a heat exchange section (61) provided in a location the same as above without using the temperature-controlled water so as to supply the chemical fluid to the semiconductor manufacturing apparatus body (4).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式