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1. 发明授权

US06566734B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06566734B2
公开(公告)日：2003-05-20
申请号：US09809211
申请日：2001-03-16
申请人： Kohei Sugihara , Toshiyuki Oishi , Naruhisa Miura , Yuji Abe , Yasunori Tokuda
发明人： Kohei Sugihara , Toshiyuki Oishi , Naruhisa Miura , Yuji Abe , Yasunori Tokuda
IPC分类号： H01L29788
CPC分类号： H01L29/66651 , H01L29/1045 , H01L29/1054 , H01L29/66492 , H01L29/66545 , H01L29/66621
摘要： In making a field effect transistor, a dummy gate electrode is formed before a gate electrode is formed. Extension regions, a side wall silicon nitride film, source/drain regions, a silicon oxide film, and other elements are formed with respect to the dummy gate electrode. The dummy gate electrode is removed, and a part of the extension regions diffused into a region immediately under the dummy gate electrode is removed. The removed part is filled with silicon selection epitaxial film. Thereafter, the intended gate electrode is formed. This production method produces a field effect transistor that prevents deterioration of electrical characteristics caused by the short channel effect and parasitic resistance.
摘要翻译：在制作场效应晶体管时，在形成栅电极之前形成伪栅电极。相对于虚拟栅电极形成延伸区域，侧壁氮化硅膜，源极/漏极区域，氧化硅膜等元件。去除虚拟栅电极，并且去除扩散到虚拟栅电极正下方的区域中的一部分延伸区域。被去除的部分填充硅选择外延膜。之后，形成预定的栅电极。该制造方法产生场效应晶体管，其防止由短沟道效应和寄生电阻引起的电特性的劣化。

2. 发明授权

US06633070B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06633070B2
公开(公告)日：2003-10-14
申请号：US09953960
申请日：2001-09-18
申请人： Naruhisa Miura , Toshiyuki Oishi , Yuji Abe , Kohei Sugihara
发明人： Naruhisa Miura , Toshiyuki Oishi , Yuji Abe , Kohei Sugihara
IPC分类号： H01L2976
CPC分类号： H01L29/4991 , H01L21/2257 , H01L21/28114 , H01L21/82385 , H01L21/823864 , H01L29/41783 , H01L29/42376 , H01L29/4983 , H01L29/66545
摘要： A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.
摘要翻译：场效应晶体管，其包括在硅衬底的表面处的栅电极，硅层以及源极和漏极区。栅电极的相对侧表面上的侧壁绝缘膜位于栅电极和硅层之间，并且包含相应的空隙。

3. 发明授权

US06624034B2 Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction 失效
标题翻译：制造场效应晶体管的方法，其中寄生电容的增加受缩小的限制
公开(公告)号：US06624034B2
公开(公告)日：2003-09-23
申请号：US10173835
申请日：2002-06-19
申请人： Yuji Abe , Naruhisa Miura , Kohei Sugihara , Toshiyuki Oishi , Yasunori Tokuda
发明人： Yuji Abe , Naruhisa Miura , Kohei Sugihara , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L21/823807 , H01L21/823814 , H01L29/665 , H01L29/66628
摘要： A method of producing a semiconductor device includes forming a gate electrode on a channel region on a surface of a semiconductor region of a semiconductor substrate, the channel region having a depth in the semiconductor substrate; forming a first pair of side wall spacers on opposite sides of the gate electrode; forming elevated semiconductor layers, each elevated semiconductor layer being elevated relative to the channel region, on regions outside of the pair of side wall spacers and in which source and drain regions of a first conductivity type are to be formed; removing the pair of first side wall spacers; and forming a pair of pocket injection regions of a second conductivity type by introducing, after the side wall spacers are removed, a dopant impurity producing the second conductivity type deeper in the semiconductor substrate than a region where the side wall spacers were formed, the pair of pocket injection regions respectively covering only a neighborhood of respective side surface parts of the channel region, where the source and drain regions are to be formed, forming respective pn junctions only between the neighborhood of the side surface parts and the pocket injection regions.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底的半导体区域的表面上的沟道区上形成栅电极，所述沟道区在半导体衬底中具有深度; 在栅电极的相对侧上形成第一对侧壁间隔物; 形成升高的半导体层，每个升高的半导体层相对于沟道区域升高，在一对侧壁间隔物外侧的区域上，并且将形成第一导电类型的源极和漏极区域; 移除所述一对第一侧壁间隔件; 以及形成第二导电类型的一对口袋注入区域，在除去侧壁间隔物之后，在半导体衬底中产生比形成侧壁间隔物的区域更深的第二导电类型的掺杂剂杂质，该对分别仅覆盖要形成源极和漏极区的沟道区的各个侧表面部分的附近的口腔注入区域，仅在侧表面部分的附近和口袋注入区域之间形成相应的pn结。

4. 发明授权

US06617654B2 Semiconductor device with sidewall spacers and elevated source/drain region 失效
标题翻译：具有侧壁间隔件和升高的源极/漏极区域的半导体器件
公开(公告)号：US06617654B2
公开(公告)日：2003-09-09
申请号：US09955488
申请日：2001-09-19
申请人： Toshiyuki Oishi , Kohei Sugihara , Naruhisa Miura , Yuji Abe , Yasunori Tokuda
发明人： Toshiyuki Oishi , Kohei Sugihara , Naruhisa Miura , Yuji Abe , Yasunori Tokuda
IPC分类号： H01L2976
CPC分类号： H01L29/66628 , H01L29/665 , H01L29/6656 , H01L29/7834
摘要： Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.
摘要翻译：源区和漏区包括在衬底的表面上的外延硅膜的区域和衬底中的区域。源极和漏极区域的结的深度与延伸区域的接合点的深度相同或更浅。结果，即使侧壁层的厚度减小，由于与源极和漏极区域相比，杂质浓度较低的延伸区域的耗尽层是主要的，所以短沟道效应具有较小的效果。

5. 发明授权

US06635938B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06635938B1
公开(公告)日：2003-10-21
申请号：US09716219
申请日：2000-11-21
申请人： Takumi Nakahata , Shigemitsu Maruno , Taisuke Furukawa , Naruhisa Miura , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takumi Nakahata , Shigemitsu Maruno , Taisuke Furukawa , Naruhisa Miura , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L2994
CPC分类号： H01L29/4983 , H01L21/823418 , H01L21/823468 , H01L29/41783 , H01L29/6656 , H01L29/66575 , H01L29/66628
摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.
摘要翻译：形成多晶硅氮化物膜以覆盖多晶硅栅极。通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。

6. 发明授权

US07842962B2 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07842962B2
公开(公告)日：2010-11-30
申请号：US11274422
申请日：2005-11-16
申请人： Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Yuji Abe
发明人： Katsuomi Shiozawa , Toshiyuki Oishi , Kazushige Kawasaki , Yuji Abe
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L33/32 , H01L33/40
摘要： A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.
摘要翻译： P型电极材料设置在P型接触层的顶表面上。 P型电极材料由AuGa膜，Au膜，Pt膜和Au膜形成。 AuGa膜设置在P型接触层上。 Au膜设置在AuGa膜上。 Pt膜设置在Au膜上。 Au膜设置在Pt膜上。由此，可以获得具有能够降低P型接触层与P型电极之间的接触电阻的P型电极的氮化物半导体器件。

7. 发明申请

US20080237639A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080237639A1
公开(公告)日：2008-10-02
申请号：US12054714
申请日：2008-03-25
申请人： Takuma NANJO , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takuma NANJO , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L21/337 , H01L49/00
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same.The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译：本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。本发明是一种异质结场效应晶体管的半导体器件，其具有Al组成比为Al的Al x Ga 1-x N沟道层， 0

8. 发明授权

US06518635B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06518635B1
公开(公告)日：2003-02-11
申请号：US09610862
申请日：2000-07-06
申请人： Katsuomi Shiozawa , Toshiyuki Oishi , Yuji Abe , Yasunori Tokuda
发明人： Katsuomi Shiozawa , Toshiyuki Oishi , Yuji Abe , Yasunori Tokuda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/26506 , H01L21/26586 , H01L21/28167
摘要： A major object of the present invention is to provide an improved semiconductor device so as to be able to reduce gate electric field concentration at a channel edge, suppress decrease in the threshold during MOSFET operation and reduce the leakage current. A gate insulation film is formed on a semiconductor substrate. A gate electrode is formed on the semiconductor substrate with the gate insulation film therebetween. The dielectric constant of the gate insulation film is not uniform in the surface.
摘要翻译：本发明的主要目的是提供一种改进的半导体器件，以便能够降低沟道边缘处的栅极电场集中，抑制MOSFET操作期间阈值的降低并减少漏电流。在半导体衬底上形成栅极绝缘膜。栅电极形成在半导体衬底上，其间具有栅极绝缘膜。栅极绝缘膜的介电常数在表面上不均匀。

9. 发明授权

US5020072A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5020072A
公开(公告)日：1991-05-28
申请号：US401745
申请日：1989-09-01
申请人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
发明人： Yuji Abe , Hiroshi Sugimoto , Kenichi Ohtsuka , Toshiyuki Oishi , Teruhito Matsui
IPC分类号： H01S5/00 , H01S5/12
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/124 , H01S5/1243
摘要： A semiconductor laser device includes an active layer, a first semiconductor layer having a larger energy band gap than the active layer, a diffraction grating layer having a larger energy band gap than the active layer and a smaller energy band gap than the first semiconductor layer, and a second semiconductor layer having the same composition as the first semiconductor layer, successively grown on the active layer, parallel stripe grooves of predetermined period reaching the first semiconductor layer produced at the entire surface of the grown layers, a cladding layer having the same composition as the first semiconductor layer which is re-grown thereon, and a diffraction grating constituted by the remainder of the diffraction grating layer. The coupling coefficient of the light is determined by the film thickness of a layer produced between the active layer and the diffraction grating layer, and the amplitude of the diffraction grating is determined by the layer thickness of the diffraction grating layer. Therefore, the coupling coefficient can be set at a design value at high precision and at high reproducibility.
摘要翻译：半导体激光器件包括有源层，具有比有源层大的能带隙的第一半导体层，具有比有源层更大的能带隙的衍射光栅层和比第一半导体层更小的能带隙，以及具有与第一半导体层相同的组成的第二半导体层，在有源层上依次生长，在生长层的整个表面上到达第一半导体层的预定周期的平行条纹沟槽，具有相同组成的包覆层作为在其上重新生长的第一半导体层，以及由衍射光栅层的其余部分构成的衍射光栅。光的耦合系数由有源层和衍射光栅层之间产生的层的膜厚决定，衍射光栅的振幅由衍射光栅层的层厚决定。因此，可以以高精度和高重现性将耦合系数设定在设计值。

10. 发明申请

US20110316047A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110316047A1
公开(公告)日：2011-12-29
申请号：US13220024
申请日：2011-08-29
申请人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
发明人： Takuma Nanjo , Muneyoshi Suita , Yuji Abe , Toshiyuki Oishi , Yasunori Tokuda
IPC分类号： H01L29/737
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/4175 , H01L29/42316 , H01L29/432 , H01L29/66462 , H01L29/7783 , H01L29/802
摘要： The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译：本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。本发明是一种异质结场效应晶体管的半导体器件，其具有Al x Ga 1-x N沟道层，Al x Ga 1-x N沟道层的组成比为Al（x（0

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