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1. 发明授权

US5432279A Process for the preparation of binary indole alkaloids 失效
标题翻译：二元吲哚生物碱的制备方法
公开(公告)号：US5432279A
公开(公告)日：1995-07-11
申请号：US55788
申请日：1993-05-03
申请人： Naoya Sakamoto , Hiroaki Tan , Eiichirou Hata , Noriaki Kihara
发明人： Naoya Sakamoto , Hiroaki Tan , Eiichirou Hata , Noriaki Kihara
IPC分类号： C07D519/04
CPC分类号： C07D519/04
摘要： The present invention relates to a process for the preparation, from e.g. anhydrovinblastine, of binary indole alkaloids effective as an anti-cancer drug, such as vinblastine, leurosidine, etc., wherein a trivalent iron source and hydride source are added in the presence of oxygen, thereby increasing a yield of an object compound. The yield of an object compound is improved still more by further addition, to the reaction system, of an oxalic acid ion source, malonic acid ion source, inorganic anion source, amino acid, etc.
摘要翻译：本发明涉及一种制备方法。二氢吲哚生物碱作为抗癌药物，如长春碱，左旋嘧啶等，其中在氧气存在下加入三价铁源和氢化物源，从而提高目标化合物的产率。通过进一步添加草酸离子源，丙二酸离子源，无机阴离子源，氨基酸等的反应体系，目标化合物的产率进一步提高。

2. 发明授权

US5037977A Method for production of dimeric alkaloids 失效
标题翻译：二聚生物碱的生产方法
公开(公告)号：US5037977A
公开(公告)日：1991-08-06
申请号：US390903
申请日：1989-08-08
申请人： Hiroaki Tan , Naoya Sakamoto , Eiichiro Hata , Takeshi Ishitoku , Noriaki Kihara
发明人： Hiroaki Tan , Naoya Sakamoto , Eiichiro Hata , Takeshi Ishitoku , Noriaki Kihara
IPC分类号： C07D519/04
CPC分类号： C07D519/04
摘要： This invention concerns a method for the production of dimeric alkaloids, characterized by reacting of catharanthine with vindoline in the presence of Fe.sup.3+ and (1) removing or inactivating the Fe.sup.3+ and allowing the reaction product to react with a reducing agent or (2) allowing presence of oxygen and a dicarboxylic acid or a derivative thereof in the reaction system and allowing the reaction product to react with a hydride source.In accordance with this invention, such dimeric alkaloid as vinblastine, leurosidin, and 3',4'-anhydrovinblastine which are useful as antineoplastic drugs can be produced in high yields.

3. 发明授权

US6100860A Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US6100860A
公开(公告)日：2000-08-08
申请号：US71161
申请日：1998-05-04
申请人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
发明人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
IPC分类号： G09G3/30 , G09G3/20 , G09G3/32 , H01L27/32 , H01L51/50
CPC分类号： G09G3/3233 , H01L27/3262 , G09G2300/0842 , G09G2320/0233
摘要： An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).
摘要翻译：具有均匀光强度的多个像素的图像显示装置包括有机EL元件（3），用于发射所述EL元件的电流控制的偏置FET（2），与所述偏置的栅电极耦合的电容器（4）用于保持信号的FET（2）和用于选择性地向所述电容器（4）写入信号的选择FET（1），其中所述偏置FET（2）的值S大于所述选择FET（1）的值，。

4. 发明授权

US5877533A Hybrid integrated circuit component 失效
公开(公告)号：US5877533A
公开(公告)日：1999-03-02
申请号：US812453
申请日：1997-03-06
申请人： Michio Arai , Yukio Yamauchi , Naoya Sakamoto , Katsuto Nagano
发明人： Michio Arai , Yukio Yamauchi , Naoya Sakamoto , Katsuto Nagano
IPC分类号： H01L27/10 , H01L21/336 , H01L25/16 , H01L27/01
CPC分类号： H01L29/66757 , H01L25/16 , H01L2221/68345 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2924/01025 , H01L2924/01046 , H01L2924/01079 , H01L2924/10253 , H01L2924/181 , H01L2924/19041 , H01L2924/19103 , H01L2924/19105 , Y10S438/938
摘要： A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

5. 发明授权

US5821560A Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element 失效
标题翻译：用于控制诸如液晶单元或电致发光元件的器件的薄膜晶体管
公开(公告)号：US5821560A
公开(公告)日：1998-10-13
申请号：US609433
申请日：1996-03-01
申请人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
发明人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66765 , H01L29/78648
摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.
摘要翻译：一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比第二栅电极的横向长度。此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

6. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

7. 发明授权

US4959533A Photosensitive semiconductor contact image sensor 失效
标题翻译：感光半导体接触式图像传感器
公开(公告)号：US4959533A
公开(公告)日：1990-09-25
申请号：US259522
申请日：1988-10-18
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

8. 发明授权

US4943710A Image sensor and manufacturing method for the same 失效
标题翻译：图像传感器及其制造方法相同
公开(公告)号：US4943710A
公开(公告)日：1990-07-24
申请号：US211225
申请日：1988-06-22
申请人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
发明人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
IPC分类号： G06K7/10 , H01L27/146 , H01L31/105 , H04N5/228 , H04N5/369
CPC分类号： G06K7/10841 , H01L27/14643 , H01L31/1055 , H04N3/1581 , Y10S148/092
摘要： This invention relates to an image sensor and manufacturing method for the same.
摘要翻译：本发明涉及一种图像传感器及其制造方法。

9. 发明授权

US08399356B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08399356B2
公开(公告)日：2013-03-19
申请号：US12408375
申请日：2009-03-20
申请人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
发明人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
IPC分类号： H01L21/306
CPC分类号： G06K19/07749 , G06K19/07779 , G06K19/07783 , H01L21/32134 , H01L21/32136 , H01L21/76829 , H01L21/76838 , H01L23/53223 , H01L27/124 , H01L27/1266 , H01L27/13 , H01L2924/0002 , H01L2924/00
摘要： A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.
摘要翻译：通过湿式蚀刻将厚度等于或大于1μm且等于或小于10μm的铝或铝合金的导电膜蚀刻成预定厚度，然后通过干法蚀刻进行蚀刻，可以抑制导电膜的蚀刻，并且可以抑制掩模的厚度减小。导电膜的侧蚀刻的抑制和掩模的厚度减小的抑制使得能够将具有等于或大于1μm并且等于或小于10μm的大的厚度的含有铝或铝合金的导电膜与被蚀刻使得导电膜的边缘部分的梯度可以陡峭，可以获得预定厚度的导电膜，并且可以抑制与掩模图案的形状差异。

10. 发明申请

US20070034870A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070034870A1
公开(公告)日：2007-02-15
申请号：US11582471
申请日：2006-10-17
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L31/00
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.
摘要翻译：在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。

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