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1. 发明授权

US5821560A Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element 失效
标题翻译：用于控制诸如液晶单元或电致发光元件的器件的薄膜晶体管
公开(公告)号：US5821560A
公开(公告)日：1998-10-13
申请号：US609433
申请日：1996-03-01
申请人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
发明人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66765 , H01L29/78648
摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.
摘要翻译：一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比第二栅电极的横向长度。此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

2. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

3. 发明授权

US5574293A Solid state imaging device using disilane 失效
标题翻译：使用乙硅烷的固态成像装置
公开(公告)号：US5574293A
公开(公告)日：1996-11-12
申请号：US343492
申请日：1994-11-22
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L31/062
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译： PCT No.PCT / JP94 / 00452 Sec。 371日期：1994年11月22日 102（e）日期1994年11月22日PCT 1994年3月22日PCT公布。 WO94 / 22173 PCT出版物日期：1994年9月29日一种衬底（1）具有被绝缘层（2）覆盖的表面，其上提供由非单晶硅通过薄膜技术制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4'）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

4. 发明授权

US07271410B2 Active matrix circuit 有权
标题翻译：有源矩阵电路
公开(公告)号：US07271410B2
公开(公告)日：2007-09-18
申请号：US10713275
申请日：2003-11-17
申请人： Isamu Kobori , Michio Arai
发明人： Isamu Kobori , Michio Arai
IPC分类号： H01L29/04 , H01L27/15
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/78675
摘要： An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.
摘要翻译：有源矩阵电路包括半导体层和设置在所述半导体层中的p型杂质区，以及包含设置在所述半导体层上的氮化硅的层间绝缘膜。

5. 发明授权

US06514803B1 Process for making an amorphous silicon thin film semiconductor device 失效
标题翻译：制造非晶硅薄膜半导体器件的方法
公开(公告)号：US06514803B1
公开(公告)日：2003-02-04
申请号：US08963588
申请日：1997-11-04
申请人： Michio Arai , Isamu Kobori
发明人： Michio Arai , Isamu Kobori
IPC分类号： H01L2184
CPC分类号： H01L21/0242 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/4908 , H01L29/66757 , H01L29/78666
摘要： In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane SinH2(n+1), where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.
摘要翻译：在具有基板（1），有源层（3,6,9），栅极绝缘层（4）和栅电极（5）的薄膜半导体器件中，通过以下步骤制造所述有源层：通过使用由其中n为整数的聚硅烷SinH 2（n + 1）构成的气体和氯化物气体通过CVD工艺在所述衬底上形成非晶硅层，并进行固相生长以产生所述非晶硅层。向用于制造非晶硅层的CVD气体中加入氯使得可以以较快的生长速率在较低温度下生产非晶硅层。这样制造的薄膜半导体器件具有迁移率高，阈值电压低的优点。

6. 发明授权

US06340537B1 Organic electroluminescent device 有权
标题翻译：有机电致发光器件
公开(公告)号：US06340537B1
公开(公告)日：2002-01-22
申请号：US09239963
申请日：1999-01-29
申请人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
发明人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
IPC分类号： B62B3300
CPC分类号： H01L51/5092 , H01L51/5088
摘要： The organic EL device of the present invention fulfills the object of realizing an organic EL device which exhibits an excellent hole injecting efficiency and an improved light emitting efficiency and which can be operated at a low drive voltage and manufactured at a reduced cost. In order to attain such object, the organic EL device comprises a hole injecting electrode, a negative electrode, and one or more organic layers between the electrodes wherein at least one of said organic layers has a light emitting function. A high resistivity inorganic hole injecting layer is provided between said hole injecting electrode and the organic layer. This layer has conduction paths for electron blockage and hole transportation. An inorganic insulative electron injecting and transporting layer is provided between the light emitting layer and the negative electrode. This layer contains at least one oxide selected from strontium oxide, magnesium oxide, calcium oxide, lithium oxide, rubidium oxide, potassium oxide, sodium oxide and cesium oxide as its main component.
摘要翻译：本发明的有机EL器件的目的在于实现具有优异的空穴注入效率和提高的发光效率的有机EL器件，并且可以以低的驱动电压进行操作并以低成本制造。为了达到这个目的，有机EL器件包括空穴注入电极，负电极和电极之间的一个或多个有机层，其中至少一个所述有机层具有发光功能。在所述空穴注入电极和有机层之间设置有高电阻率的无机空穴注入层。该层具有电子阻塞和空穴传输的传导路径。在发光层和负极之间设置无机绝缘性电子注入输送层。该层含有选自氧化锶，氧化镁，氧化钙，氧化锂，氧化铷，氧化钾，氧化钠，氧化铯为主要成分的至少一种氧化物。

7. 发明授权

US06303239B1 Organic electroluminescent device 失效
标题翻译：有机电致发光器件
公开(公告)号：US06303239B1
公开(公告)日：2001-10-16
申请号：US09241284
申请日：1999-02-01
申请人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
发明人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
IPC分类号： H01L3300
CPC分类号： H01L51/5092 , H01L51/5221
摘要： An object of the invention is to achieve an organic EL device which has an extended life, weather resistance, high stability, and high efficiency, and is inexpensive as well. This object is accomplished by the provision of an organic EL device comprising a substrate, a pair of a hole injecting electrode and a cathode formed on the substrate, and an organic layer located between these electrodes and taking part in at least a light emission function, wherein between the organic layer and the cathode there is provided an inorganic insulating electron injecting and transporting layer comprising a first component comprising at least one oxide selected from the group consisting of lithium oxide, rubidium oxide, potassium oxide, sodium oxide and cesium oxide, a second component comprising at least one oxide selected from the group consisting of strontium oxide, magnesium oxide and calcium oxide, and a third component comprising silicon oxide and/or germanium oxide.
摘要翻译：本发明的目的在于实现具有延长使用寿命，耐候性，高稳定性和高效率的有机EL器件，并且也便宜。该目的通过提供一种包括基板，一对空穴注入电极和形成在基板上的阴极的有机EL器件和位于这些电极之间的有机层并且至少参与发光功能来实现，其中在有机层和阴极之间提供无机绝缘电子注入和传输层，其包含第一组分，该第一组分包含选自氧化锂，氧化铷，氧化钾，氧化钠和氧化铯中的至少一种氧化物，第二组分包含选自氧化锶，氧化镁和氧化钙中的至少一种氧化物，以及包含氧化硅和/或氧化锗的第三组分。

8. 发明授权

US06208076B1 Organic electroluminescent device with silicone oxide and/or germanium oxide insulative layer 有权
标题翻译：有机电致发光器件
公开(公告)号：US06208076B1
公开(公告)日：2001-03-27
申请号：US09229569
申请日：1999-01-13
申请人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
发明人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
IPC分类号： H01L3300
CPC分类号： H01L51/5088
摘要： The invention provides an organic EL device comprising a hole injecting electrode, a negative electrode, at least one organic layer between the electrodes, the organic layer including a light emitting layer having a light emitting function, and a hole injecting and transporting layer containing a hole transporting organic material and an inorganic insulative hole injecting and transporting layer formed of an inorganic material between the hole injecting electrode and the light emitting layer. The inorganic insulative hole injecting and transporting layer contains silicon oxide and/or germanium oxide as a main component, the main component having an average composition represented by the formula: (Si1−xGex)Oy wherein 0≦x≦1 and 1
摘要翻译：本发明提供了一种有机EL器件，其包括空穴注入电极，负极，电极之间的至少一个有机层，有机层包括具有发光功能的发光层，以及含有孔的空穴注入传输层在空穴注入电极和发光层之间传输有机材料和由无机材料形成的无机绝缘空穴注入和传输层。无机绝缘性空穴注入输送层含有氧化硅和/或氧化锗作为主要成分，主成分的平均成分由下式（Si1-xGex）Oy表示，其中0 <= x <= 1， y <= 2。这种结构使得能够使用有机材料具有空穴注入和输送层，寿命长，耐候性，高稳定性，高效率和低成本的现有技术的器件具有更好的性能。

9. 发明授权

US07407838B2 Method of manufacturing a semiconductor method of manufacturing a thin-film transistor and thin-film transistor 有权
标题翻译：制造薄膜晶体管和薄膜晶体管的半导体方法的制造方法
公开(公告)号：US07407838B2
公开(公告)日：2008-08-05
申请号：US10623581
申请日：2003-07-22
申请人： Isamu Kobori , Michio Arai
发明人： Isamu Kobori , Michio Arai
IPC分类号： H01L21/00
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/78675
摘要： A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 μm2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 μm2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions each having a plane area of 1000 μm2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.
摘要翻译：一种制造半导体的方法，其特征在于，通过退火处理将形成在基板上的非晶硅薄膜多晶化，所述非晶硅薄膜的平面面积为1000μm以下。一种薄膜晶体管，其特征在于包括由彼此平行布置的多个岛状区域形成的活性硅膜，每个所述岛状区域由多晶硅薄膜形成，所述多晶硅薄膜的平面面积 1000小时以下。一种制造薄膜晶体管的方法，包括以下步骤：在衬底上形成非晶硅薄膜; 将非晶硅薄膜加工成平均面积为1000μm以下的多个岛状区域; 通过退火处理形成岛状区域的非晶硅薄膜多晶化; 以及形成具有所述多个岛状区域中的至少一个作为有源硅层的薄膜晶体管。

10. 发明授权

US06222314B1 Organic electoluminescent device with inorganic insulating hole injecting layer 有权
标题翻译：有机电致发光器件，具有无机绝缘空穴注入层
公开(公告)号：US06222314B1
公开(公告)日：2001-04-24
申请号：US09234507
申请日：1999-01-21
申请人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
发明人： Michio Arai , Isamu Kobori , Etsuo Mitsuhashi
IPC分类号： H01J162
CPC分类号： H01L51/5088
摘要： An organic EL device has a hole injecting electrode, an electron injecting electrode, an organic layer between the electrodes, and an inorganic insulating hole injecting layer between the hole injecting electrode and the organic layer. The inorganic insulating hole injecting layer contains silicon oxide or germanium oxide or a mixture thereof as a main component, and the main component is represented by (Si1-xGex)Oy wherein 0≦x≦1 and 1.7≦y≦2.2. The hole injecting layer further contains Cu, Fe, Ni, Ru, Sn, Au or a mixture thereof, The device has advantages including a long lifetime, improved efficiency, low operating voltage, and low cost, and is suited for use as high-performance flat-panel color displays.
摘要翻译：有机EL器件具有空穴注入电极，电子注入电极，电极之间的有机层和空穴注入电极与有机层之间的无机绝缘性空穴注入层。无机绝缘空穴注入层含有氧化硅或氧化锗或其混合物作为主要成分，主成分由（Si1-xGex）Oy表示，其中0 <= x <= 1且1.7 <= y <2.2 。空穴注入层还含有Cu，Fe，Ni，Ru，Sn，Au或其混合物。该器件具有寿命长，效率提高，工作电压低，成本低的优点，性能平板彩色显示器。

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