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    • 3. 发明授权
    • 3-Hydroxymethylbenzo[b]thiophene derivatives and process for their preparation
    • 3-羟甲基苯并[b]噻吩衍生物及其制备方法
    • US06774245B2
    • 2004-08-10
    • US10332079
    • 2003-01-02
    • Hiroshi SaitohTsuyoshi MizunoNaoki Tsuchiya
    • Hiroshi SaitohTsuyoshi MizunoNaoki Tsuchiya
    • C07D33356
    • C07D333/56
    • The present invention is a method of producing a 3-hydroxymethyl-benzo[b]thiophene derivative without the possible concomitant formation of isomers, which comprises selectively cyclizing a sulfoxide having X shown in the reaction scheme below: wherein R1 to R3 are, same or independently, a hydrogen atom, an alkyl group having 1 to 4 carbons, a trihalomethyl group, an alkoxy group having 1 to 4 carbons, an alkylthio group having 1 to 4 carbons, or a trihalomethoxy group; R4 is an acyl group; X is a halogen atom, a hydroxy group, an amino group, a mercapto group, an alkylthio group having 1 to 9 carbons, an acyloxy group having 1 to 9 carbons, an acylamino group having 1 to 9 carbons, or a trihalomethoxy group.
    • 本发明是一种不含可能伴随形成异构体的3-羟甲基 - 苯并[b]噻吩衍生物的制备方法,该方法包括选择性环化下述反应方案中所示的具有X的亚砜:其中R1至R3相同或相同 独立地为氢原子,碳原子数1〜4的烷基,三卤代甲基,碳原子数1〜4的烷氧基,碳原子数1〜4的烷硫基或三卤甲氧基。 R4是酰基; X是卤素原子,羟基,氨基,巯基,碳原子数1〜9的烷硫基,碳原子数1〜9的酰氧基,碳原子数1〜9的酰氨基或三卤代甲氧基。
    • 6. 发明申请
    • SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
    • 基板处理装置和基板处理方法
    • US20080008835A1
    • 2008-01-10
    • US11562909
    • 2006-11-22
    • Shouichi TERADATsuyoshi MizunoTakeshi Uehara
    • Shouichi TERADATsuyoshi MizunoTakeshi Uehara
    • B05D3/10B05C11/02
    • H01L21/316H01L21/31055H01L21/31111H01L21/6715
    • In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
    • 在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中,将涂布液供给到旋转基板上,形成涂膜 加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。 接下来,将蚀刻溶液供给到旋转基板上以蚀刻涂膜,然后将该涂布液供给到基板,在基板的前表面形成平坦的涂膜。 此后,加热基板以固化涂膜。 这样使涂膜均匀,高精度地平坦化,而不经历诸如化学机械抛光的高负载过程。
    • 7. 发明申请
    • Nozzle plate for a sliding nozzle apparatus
    • 用于滑动喷嘴装置的喷嘴板
    • US20050230886A1
    • 2005-10-20
    • US11152209
    • 2005-06-15
    • Tomohiro YotabunTsuyoshi MizunoTsuyoshi Yoshida
    • Tomohiro YotabunTsuyoshi MizunoTsuyoshi Yoshida
    • B22D11/10B22D41/24B22D41/28B22D41/22
    • B22D41/28
    • It is an object to form a plate for a sliding nozzle apparatus in a shape for decreasing extreme erosion and extend durability of the plate to enable cost reduction, the sliding-nozzle plate having dimensions (unit length is mm) as indicated in following equations: a dimension from the center position X of the nozzle hole to a closest end of the plate for the sliding nozzle in the longitudinal direction is a sum of a dimension “b” from the center position X to an ideal circle with the position X as the center and a dimension “d” from the ideal circle to the closest end in the longitudinal direction, a dimension from the center position X and to a center position Y is a dimension S of the stroke, and a dimension from the center position Y to a closest end of the plate for the sliding nozzle in the longitudinal direction is a dimension “c”, where b: a+30˜40, c: 0.75a+20˜30, d: 0.5a, S: 2a+m, and m: 15˜25.
    • 本发明的目的是形成滑动喷嘴装置的板,其具有减小极限侵蚀的形状并延长板的耐用性,以便降低成本,滑动喷嘴板的尺寸(单位长度为mm)如下面所示: 从喷嘴孔的中心位置X到纵向的滑动板的最近端的尺寸是从中心位置X到理想圆的尺寸“b”与位置X为 中心和从理想圆到纵向最近端的尺寸“d”,从中心位置X到中心位置Y的尺寸是行程的尺寸S,并且从中心位置Y到 用于滑动喷嘴的纵向方向的最靠近的端部是尺寸“c”,其中b:a + 30〜40,c:0.75a + 20〜30,d:0.5a,S:2a + m, m:15〜25。
    • 8. 发明授权
    • Rotating damper
    • 旋转阻尼器
    • US06634033B2
    • 2003-10-21
    • US10182416
    • 2002-07-29
    • Tsuyoshi MizunoKazuyoshi OshimaYoujirou Nakayama
    • Tsuyoshi MizunoKazuyoshi OshimaYoujirou Nakayama
    • A47K1304
    • F16F9/516F16F9/14F16F9/145F16F9/19F16F9/3221F16F2230/0064
    • A cam member 5 is disposed within a first chamber R1 such that the cam member 5 is rotatable but non-movable in the axial direction. The cam member 5 is non-rotatably connected to a rotor 3 through a connection shaft portion 52 piercing into a piston 4. A second cam mechanism 10 is disposed between the cam member 5 and the piston 4. When the cam mechanism 7 causes the piston 4 to move from the second chamber R2 side to the first chamber R1 side in accordance with rotation of the rotor 3 in one direction, the second cam mechanism 10 allows the piston 4 to move from the second chamber R2 side to the first chamber R1 side by the same amount of movement. When the second cam mechanism 10 causes the piston 4 to move from the first chamber R1 side to the second chamber R2 side in accordance with rotation of the rotor 3 in the other direction, the cam mechanism 7 allows the piston 4 to move from the first chamber R1 side to the second chamber R2 side by the same amount of movement.
    • 凸轮构件5设置在第一室R1内,使得凸轮构件5可旋转但在轴向方向上不可移动。 凸轮构件5通过穿入活塞4的连接轴部52不可旋转地连接到转子3.第二凸轮机构10设置在凸轮构件5和活塞4之间。当凸轮机构7使活塞 4根据转子3沿一个方向的旋转,从第二室R2侧移动到第一室R1侧,第二凸轮机构10使活塞4从第二室R2侧移动到第一室R1侧 通过相同的运动量。 当第二凸轮机构10根据转子3沿另一方向的旋转使活塞4从第一室R1侧移动到第二室R2侧时,凸轮机构7使活塞4从第一室R1移动到第二室R2侧。 室R1侧到第二室R2侧移动相同量的运动。