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1. 发明申请

US20050267148A1 Benzimidazole derivative 审中-公开
标题翻译：苯并咪唑衍生物
公开(公告)号：US20050267148A1
公开(公告)日：2005-12-01
申请号：US11129508
申请日：2005-05-16
申请人： Naoki Tsuchiya , Tsuyoshi Mizuno , Hiroshi Saitou , Yoshiyuki Matsumoto , Susumu Takeuchi , Naoki Hase
发明人： Naoki Tsuchiya , Tsuyoshi Mizuno , Hiroshi Saitou , Yoshiyuki Matsumoto , Susumu Takeuchi , Naoki Hase
IPC分类号： A61K31/4184 , A61K31/4745 , C07D401/06 , C07D403/06 , C07D405/06 , C07D409/06 , C07D413/06 , C07D471/02
CPC分类号： C07D401/06 , C07D403/06 , C07D405/06 , C07D409/06 , C07D413/06
摘要： The present invention is a thiobenzimidazole derivative represented by the following formula (1) or a medically acceptable salt thereof wherein said thiobenzimidazole derivative and a medically acceptable salt thereof have a potent activity of inhibiting human chymase. Thus, they are potential preventive and/or therapeutic agents clinically applicable to various diseases in which human chymase is involved.
摘要翻译：本发明是由下式（1）表示的硫代苯并咪唑衍生物或其医学上可接受的盐，其中所述硫代苯并咪唑衍生物及其医学上可接受的盐具有抑制人胃促胰酶的有效活性。因此，它们是临床适用于涉及人胃促胰酶的各种疾病的潜在的预防和/或治疗剂。

2. 发明授权

US07176320B2 Benzimidazole derivative 失效
标题翻译：苯并咪唑衍生物
公开(公告)号：US07176320B2
公开(公告)日：2007-02-13
申请号：US10777067
申请日：2004-02-13
申请人： Naoki Tsuchiya , Yoshiyuki Matsumoto , Hiroshi Saitou , Tsuyoshi Mizuno
发明人： Naoki Tsuchiya , Yoshiyuki Matsumoto , Hiroshi Saitou , Tsuyoshi Mizuno
IPC分类号： C07D403/12 , C07D409/12 , A61K31/4184
CPC分类号： C07D403/06 , C07D409/06
摘要： A benzimidazole derivative or its medically acceptable salt, represented by the following formula (1), that is a human chymase activity inhibitor capable of being applied clinically: wherein, R1 and R2 represent a hydrogen atom, an alkyl group or an alkoxy group, etc., A represents an alkylene group or an alkenylene group, E represents —COOR3, —SO3R3, —CONHR3 or —SO2NHR3, etc., G represents an alkylene group, M represents a single bond or —S(O)m—, J represents a heterocyclic group, and X represents —CH═ or a nitrogen atom.
摘要翻译：由下式（1）表示的苯并咪唑衍生物或其医学上可接受的盐，其是能够临床应用的人胃促胰酶抑制酶抑制剂：其中R 1和R 2， SUP>表示氢原子，烷基或烷氧基等，A表示亚烷基或亚烯基，E表示-COOR 3，-SO 3 R 3，-CONHR 3或-SO 2 NHR 3等，G表示亚烷基 M表示单键或-S（O）m - ，J表示杂环基，X表示-CH-或氮原子。

3. 发明授权

US06774245B2 3-Hydroxymethylbenzo[b]thiophene derivatives and process for their preparation 失效
标题翻译： 3-羟甲基苯并[b]噻吩衍生物及其制备方法
公开(公告)号：US06774245B2
公开(公告)日：2004-08-10
申请号：US10332079
申请日：2003-01-02
申请人： Hiroshi Saitoh , Tsuyoshi Mizuno , Naoki Tsuchiya
发明人： Hiroshi Saitoh , Tsuyoshi Mizuno , Naoki Tsuchiya
IPC分类号： C07D33356
CPC分类号： C07D333/56
摘要： The present invention is a method of producing a 3-hydroxymethyl-benzo[b]thiophene derivative without the possible concomitant formation of isomers, which comprises selectively cyclizing a sulfoxide having X shown in the reaction scheme below: wherein R1 to R3 are, same or independently, a hydrogen atom, an alkyl group having 1 to 4 carbons, a trihalomethyl group, an alkoxy group having 1 to 4 carbons, an alkylthio group having 1 to 4 carbons, or a trihalomethoxy group; R4 is an acyl group; X is a halogen atom, a hydroxy group, an amino group, a mercapto group, an alkylthio group having 1 to 9 carbons, an acyloxy group having 1 to 9 carbons, an acylamino group having 1 to 9 carbons, or a trihalomethoxy group.
摘要翻译：本发明是一种不含可能伴随形成异构体的3-羟甲基 - 苯并[b]噻吩衍生物的制备方法，该方法包括选择性环化下述反应方案中所示的具有X的亚砜：其中R1至R3相同或相同独立地为氢原子，碳原子数1〜4的烷基，三卤代甲基，碳原子数1〜4的烷氧基，碳原子数1〜4的烷硫基或三卤甲氧基。 R4是酰基; X是卤素原子，羟基，氨基，巯基，碳原子数1〜9的烷硫基，碳原子数1〜9的酰氧基，碳原子数1〜9的酰氨基或三卤代甲氧基。

4. 发明授权

US06884896B2 Benzo[b]thiophene derivatives and process for preparing the same 失效
标题翻译：苯并[b]噻吩衍生物及其制备方法
公开(公告)号：US06884896B2
公开(公告)日：2005-04-26
申请号：US10258173
申请日：2002-02-22
申请人： Hiroshi Saitoh , Naoki Tsuchiya , Tsuyoshi Mizuno , Tomohide Ida , Yoshiyuki Sawai
发明人： Hiroshi Saitoh , Naoki Tsuchiya , Tsuyoshi Mizuno , Tomohide Ida , Yoshiyuki Sawai
IPC分类号： C07D333/54 , C07D333/56 , C07D333/64 , C07D235/24 , C07D333/52
CPC分类号： C07D333/54 , C07D333/56 , C07D333/64
摘要： The present invention is 3,4-disubstituted-benzo[b]thiophene derivatives represented by general formula (I) and processes for preparing compounds represented by general formula (V) from compounds represented by general formula (IV), preparing a mixture of compounds represented by the following formula (II) and the following formula (III) and preparing the benzo[b]thiophene derivatives represented by the above formula (I): wherein, R1 and R2 represent each a halogen atom, a trihalomethyl group, a C1-4 alkyl group or a C1-4 alkoxy group; X represents a hydroxy group or a halogen atom; R3 and R4 represent each a hydrogen or a halogen atom, a trihalomethyl group, a C1-4 alkyl group or a C1-4 alkoxy group; and R5 represents a C1-3 alkyl group or a trifluoromethyl group.
摘要翻译：本发明是由通式（I）表示的3,4-二取代 - 苯并[b]噻吩衍生物和由通式（Ⅳ）表示的化合物制备由通式（Ⅴ）表示的化合物的方法，制备化合物由下式（II）和下式（III）表示并制备由上式（I）表示的苯并[b]噻吩衍生物：其中R 1和R 2 代表卤素原子，三卤代甲基，C 1-4烷基或C 1-4烷氧基; X表示羟基或卤素原子; R 3和R 4各自表示氢或卤素原子，三卤代甲基，C 1-4烷基或C 1-4烷基， C 1-4烷氧基; R 5表示C 1-3烷基或三氟甲基。

5. 发明申请

US20100221436A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 失效
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100221436A1
公开(公告)日：2010-09-02
申请号：US12781867
申请日：2010-05-18
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05D3/02 , B05D3/12
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

6. 发明申请

US20080008835A1 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20080008835A1
公开(公告)日：2008-01-10
申请号：US11562909
申请日：2006-11-22
申请人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi TERADA , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： B05D3/10 , B05C11/02
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译：在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。此后，加热基板以固化涂膜。这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。

7. 发明申请

US20050230886A1 Nozzle plate for a sliding nozzle apparatus 有权
标题翻译：用于滑动喷嘴装置的喷嘴板
公开(公告)号：US20050230886A1
公开(公告)日：2005-10-20
申请号：US11152209
申请日：2005-06-15
申请人： Tomohiro Yotabun , Tsuyoshi Mizuno , Tsuyoshi Yoshida
发明人： Tomohiro Yotabun , Tsuyoshi Mizuno , Tsuyoshi Yoshida
IPC分类号： B22D11/10 , B22D41/24 , B22D41/28 , B22D41/22
CPC分类号： B22D41/28
摘要： It is an object to form a plate for a sliding nozzle apparatus in a shape for decreasing extreme erosion and extend durability of the plate to enable cost reduction, the sliding-nozzle plate having dimensions (unit length is mm) as indicated in following equations: a dimension from the center position X of the nozzle hole to a closest end of the plate for the sliding nozzle in the longitudinal direction is a sum of a dimension “b” from the center position X to an ideal circle with the position X as the center and a dimension “d” from the ideal circle to the closest end in the longitudinal direction, a dimension from the center position X and to a center position Y is a dimension S of the stroke, and a dimension from the center position Y to a closest end of the plate for the sliding nozzle in the longitudinal direction is a dimension “c”, where b: a+30˜40, c: 0.75a+20˜30, d: 0.5a, S: 2a+m, and m: 15˜25.
摘要翻译：本发明的目的是形成滑动喷嘴装置的板，其具有减小极限侵蚀的形状并延长板的耐用性，以便降低成本，滑动喷嘴板的尺寸（单位长度为mm）如下面所示：从喷嘴孔的中心位置X到纵向的滑动板的最近端的尺寸是从中心位置X到理想圆的尺寸“b”与位置X为中心和从理想圆到纵向最近端的尺寸“d”，从中心位置X到中心位置Y的尺寸是行程的尺寸S，并且从中心位置Y到用于滑动喷嘴的纵向方向的最靠近的端部是尺寸“c”，其中b：a + 30〜40，c：0.75a + 20〜30，d：0.5a，S：2a + m， m：15〜25。

8. 发明授权

US06634033B2 Rotating damper 有权
标题翻译：旋转阻尼器
公开(公告)号：US06634033B2
公开(公告)日：2003-10-21
申请号：US10182416
申请日：2002-07-29
申请人： Tsuyoshi Mizuno , Kazuyoshi Oshima , Youjirou Nakayama
发明人： Tsuyoshi Mizuno , Kazuyoshi Oshima , Youjirou Nakayama
IPC分类号： A47K1304
CPC分类号： F16F9/516 , F16F9/14 , F16F9/145 , F16F9/19 , F16F9/3221 , F16F2230/0064
摘要： A cam member 5 is disposed within a first chamber R1 such that the cam member 5 is rotatable but non-movable in the axial direction. The cam member 5 is non-rotatably connected to a rotor 3 through a connection shaft portion 52 piercing into a piston 4. A second cam mechanism 10 is disposed between the cam member 5 and the piston 4. When the cam mechanism 7 causes the piston 4 to move from the second chamber R2 side to the first chamber R1 side in accordance with rotation of the rotor 3 in one direction, the second cam mechanism 10 allows the piston 4 to move from the second chamber R2 side to the first chamber R1 side by the same amount of movement. When the second cam mechanism 10 causes the piston 4 to move from the first chamber R1 side to the second chamber R2 side in accordance with rotation of the rotor 3 in the other direction, the cam mechanism 7 allows the piston 4 to move from the first chamber R1 side to the second chamber R2 side by the same amount of movement.
摘要翻译：凸轮构件5设置在第一室R1内，使得凸轮构件5可旋转但在轴向方向上不可移动。凸轮构件5通过穿入活塞4的连接轴部52不可旋转地连接到转子3.第二凸轮机构10设置在凸轮构件5和活塞4之间。当凸轮机构7使活塞 4根据转子3沿一个方向的旋转，从第二室R2侧移动到第一室R1侧，第二凸轮机构10使活塞4从第二室R2侧移动到第一室R1侧通过相同的运动量。当第二凸轮机构10根据转子3沿另一方向的旋转使活塞4从第一室R1侧移动到第二室R2侧时，凸轮机构7使活塞4从第一室R1移动到第二室R2侧。室R1侧到第二室R2侧移动相同量的运动。

9. 发明授权

US07757626B2 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07757626B2
公开(公告)日：2010-07-20
申请号：US11504581
申请日：2006-08-16
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05C11/02 , B05C11/00 , B24B29/00
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

10. 发明申请

US20070048449A1 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20070048449A1
公开(公告)日：2007-03-01
申请号：US11504581
申请日：2006-08-16
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05D3/12 , B05D3/02
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

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