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1. 发明授权

US08377269B2 Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：US08377269B2
公开(公告)日：2013-02-19
申请号：US12991961
申请日：2009-06-04
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3457 , C23C14/358 , H01J37/32633 , H01J37/3266 , H01J37/3408 , H01J37/3458 , H01L21/2855
摘要： There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.
摘要翻译：提供了一种廉价的溅射装置，其中通过加速从靶分散的原子的电离可以稳定地进行自溅射。溅射装置具有：设置在真空室内的靶，以与待加工的基板W相对; 在靶的溅射表面前面形成磁场的磁体组件; 以及对具有负DC电位的目标进行充电的DC电源。第一线圈设置在靶的溅射表面的后表面的中心部分中。第一线圈电连接到第一电源和与目标的输出之间。当通过溅射电源将负电位充电到目标电极时，电力被充电到第一线圈，由此在溅射表面的前面产生磁场。

2. 发明申请

US20110062019A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20110062019A1
公开(公告)日：2011-03-17
申请号：US12991961
申请日：2009-06-04
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3457 , C23C14/358 , H01J37/32633 , H01J37/3266 , H01J37/3408 , H01J37/3458 , H01L21/2855
摘要： There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.
摘要翻译：提供了一种廉价的溅射装置，其中通过加速从靶分散的原子的电离可以稳定地进行自溅射。溅射装置具有：设置在真空室内的靶，以与待加工的基板W相对; 在靶的溅射表面前面形成磁场的磁体组件; 以及对具有负DC电位的目标进行充电的DC电源。第一线圈设置在靶的溅射表面的后表面的中心部分中。第一线圈电连接到第一电源和与目标的输出之间。当通过溅射电源将负电位充电到目标电极时，电力被充电到第一线圈，由此在溅射表面的前面产生磁场。

3. 发明授权

US06706155B2 Sputtering apparatus and film manufacturing method 有权
标题翻译：溅射装置和膜制造方法
公开(公告)号：US06706155B2
公开(公告)日：2004-03-16
申请号：US09939715
申请日：2001-08-28
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3405
摘要： In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.
摘要翻译：为了形成高纵横比的薄膜，真空室内的靶与衬底台之间的空间被阳极电极和接地电极包围。阳极位于靶的侧面，施加正电压。接地电极位于衬底台的侧面并与地电位连接。对由阳极电极飞出的方向进行弯曲的溅射粒子的轨迹进行校正，并使其垂直于衬底台上的衬底的表面入射。因此，能够使入射到基板表面的溅射粒子的量增加并垂直入射; 并且可以形成高纵横比的薄膜。

4. 发明申请

US20110048927A1 SPUTTERING APPARATUS AND SPUTTERING METHOD 审中-公开
标题翻译：溅射装置和喷射方法
公开(公告)号：US20110048927A1
公开(公告)日：2011-03-03
申请号：US12991800
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Kokichi Kamada , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3408 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： An inexpensive sputtering apparatus of simple construction is provided in which a film can be formed with good coating characteristics relative to each of micropores of high aspect ratio. The sputtering apparatus has: a target lying opposite to a substrate W which is disposed inside a vacuum chamber; a magnet assembly which generates a tunnel-shaped magnetic field in front of a sputtering surface of the target; a gas introduction means which introduces a sputtering gas into the vacuum chamber; and a sputtering power supply which charges negative potential to the target. There are provided magnetic field generating means to generate a vertical magnetic field of such a nature that vertical lines of magnetic force M pass through a sputtering surface and through an entire surface of the substrate at a predetermined distance from one another.
摘要翻译：提供一种简单结构的廉价的溅射装置，其中相对于每个高纵横比的微孔，可以形成具有良好涂层特性的膜。溅射装置具有：设置在真空室内的与基板W相对的靶; 磁体组件，其在目标的溅射表面的前方产生隧道状磁场; 气体引入装置，其将溅射气体引入真空室; 以及向目标物体负电荷的溅射电源。提供了用于产生垂直磁场的磁场产生装置，其特征在于磁力M的垂直线通过溅射表面并穿过基板的整个表面彼此预定的距离。

5. 发明授权

US08470145B2 Cathode unit and sputtering apparatus provided with the same 有权
标题翻译：阴极单元和溅射装置
公开(公告)号：US08470145B2
公开(公告)日：2013-06-25
申请号：US12991777
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
IPC分类号： C23C14/35
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3414 , H01J37/3423 , H01J37/3435 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
摘要翻译：提供了廉价的阴极单元，其结构简单，并且能够在基板的整个表面上相对于高纵横比的每个微孔形成具有良好涂层特性的膜。还提供了设置有阴极单元的溅射装置。本发明的阴极单元具有在其一个表面上形成有一个或多个凹部的保持件。在凹部内部，从其底侧安装有底圆筒形目标构件。在每个目标构件内部的空间内，存在用于产生磁场的磁场产生装置。

6. 发明申请

US20110056829A1 CATHODE UNIT AND SPUTTERING APPARATUS PROVIDED WITH THE SAME 有权
标题翻译： CATHODE单元和提供的设备
公开(公告)号：US20110056829A1
公开(公告)日：2011-03-10
申请号：US12991777
申请日：2009-06-23
申请人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
发明人： Naoki Morimoto , Tomoyasu Kondo , Daisuke Mori , Kyuzo Nakamura
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3414 , H01J37/3423 , H01J37/3435 , H01J37/3452 , H01L21/2855 , H01L21/76843 , H01L21/76873
摘要： There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.
摘要翻译：提供了廉价的阴极单元，其结构简单，并且能够在基板的整个表面上相对于高纵横比的每个微孔形成具有良好涂层特性的膜。还提供了设置有阴极单元的溅射装置。本发明的阴极单元具有在其一个表面上形成有一个或多个凹部的保持件。在凹部内部，从其底侧安装有底圆筒形目标构件。在每个目标构件内部的空间内，存在用于产生磁场的磁场产生装置。

7. 发明授权

US08158198B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

8. 发明授权

US08796142B2 Method for forming tantalum nitride film 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：US08796142B2
公开(公告)日：2014-08-05
申请号：US11885345
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
摘要翻译：通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。

9. 发明申请

US20090162565A1 Method for Forming Tantalum Nitride Film 审中-公开
标题翻译：形成钽氮化物膜的方法
公开(公告)号：US20090162565A1
公开(公告)日：2009-06-25
申请号：US11885350
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo , Kyuzo Nakamura
IPC分类号： C23C14/14 , C23C16/34
CPC分类号： C23C16/34 , C23C14/18 , C23C14/48 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaOxNy(R,R′)z according to the CVD technique; and then introducing an H atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles can be implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：通过引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体形成氮化钽膜：N-（R，R'）（在式中，R和R '可以相同或不同，并且各自表示具有1至6个碳原子的烷基）和含氧原子的气体进入成膜室，以使它们在基材上彼此反应，从而形成表示的化合物根据CVD技术，通式为TaOxNy（R，R'）z; 然后将含H原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对连接形成膜的粘附性足够高，因此可用作阻挡膜。此外，可以根据溅射技术将钽颗粒注入到所得膜中，从而进一步用钽富集膜。

10. 发明授权

US06469448B2 Inductively coupled RF plasma source 有权
标题翻译：电感耦合射频等离子体源
公开(公告)号：US06469448B2
公开(公告)日：2002-10-22
申请号：US09768236
申请日：2001-01-25
申请人： Youji Taguchi , Tomoyasu Kondo
发明人： Youji Taguchi , Tomoyasu Kondo
IPC分类号： H01J724
CPC分类号： H01J37/321
摘要： The present invention provides an inductively coupled RF plasma source that can improve the nonuniformity in substrate treatment by canceling out the radial electric fields generated between a plasma and an antenna coil. The inductively coupled RF plasma source comprises a plurality of one-turn antenna coils, each having one end connected to a RF supply along a circumferential side wall of a plasma generating chamber and the other end connected to a grounding potential, arranged at intervals in the longitudinal axial direction of the plasma generating chamber. One end of each one-turn antenna coil displaced at equal angles from each other in a circumferential direction.
摘要翻译：本发明提供一种电感耦合RF等离子体源，其可以通过消除在等离子体和天线线圈之间产生的径向电场来改善衬底处理中的不均匀性。电感耦合射频等离子体源包括多个单匝天线线圈，每个单匝天线线圈的一端沿着等离子体发生室的周向侧壁连接到RF电源，另一端连接到接地电位，间隔设置在等离子体发生室的纵向轴向。每个单匝天线线圈的一端在圆周方向上以相等的角度相移。

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