专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08956513B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08956513B2
公开(公告)日：2015-02-17
申请号：US13378534
申请日：2010-07-15
申请人： Shinya Nakamura , Yoshinori Fujii , Hideto Nagashima
发明人： Shinya Nakamura , Yoshinori Fujii , Hideto Nagashima
IPC分类号： C23C14/56 , C23C14/06 , C23C14/00
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/56 , C23C14/568
摘要： There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.
摘要翻译：提供了一种基板处理方法，其中即使在用于恢复处理室的状态的恢复处理的时间比在处理室中进行预定处理的时间长的情况下也可以提高吞吐量。基板交替地传送到两个处理室C，D，并且在处理室C，D中的基板上彼此平行地执行相同的成膜处理。当处理室C中处理的基板的数量达到预定数量（11个基板）时，成膜室C中的虚拟溅射处理开始，第一批次的第23至25个基板被转印到成膜室D 从而进行成膜处理，直到虚拟溅射处理结束。

2. 发明授权

US08377269B2 Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：US08377269B2
公开(公告)日：2013-02-19
申请号：US12991961
申请日：2009-06-04
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3457 , C23C14/358 , H01J37/32633 , H01J37/3266 , H01J37/3408 , H01J37/3458 , H01L21/2855
摘要： There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.
摘要翻译：提供了一种廉价的溅射装置，其中通过加速从靶分散的原子的电离可以稳定地进行自溅射。溅射装置具有：设置在真空室内的靶，以与待加工的基板W相对; 在靶的溅射表面前面形成磁场的磁体组件; 以及对具有负DC电位的目标进行充电的DC电源。第一线圈设置在靶的溅射表面的后表面的中心部分中。第一线圈电连接到第一电源和与目标的输出之间。当通过溅射电源将负电位充电到目标电极时，电力被充电到第一线圈，由此在溅射表面的前面产生磁场。

3. 发明申请

US20120111833A1 SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理方法
公开(公告)号：US20120111833A1
公开(公告)日：2012-05-10
申请号：US13378534
申请日：2010-07-15
申请人： Shinya Nakamura , Yoshinori Fujii , Hideto Nagashima
发明人： Shinya Nakamura , Yoshinori Fujii , Hideto Nagashima
IPC分类号： B44C1/22 , C23C14/34
CPC分类号： C23C14/0641 , C23C14/0036 , C23C14/56 , C23C14/568
摘要： There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.
摘要翻译：提供了一种基板处理方法，其中即使在用于恢复处理室的状态的恢复处理的时间比在处理室中进行预定处理的时间长的情况下也可以提高吞吐量。基板交替地传送到两个处理室C，D，并且在处理室C，D中的基板上彼此平行地执行相同的成膜处理。当处理室C中处理的基板的数量达到预定数量（11个基板）时，成膜室C中的虚拟溅射处理开始，第一批次的第23至25个基板被转印到成膜室D 从而进行成膜处理，直到虚拟溅射处理结束。

4. 发明申请

US20110062019A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20110062019A1
公开(公告)日：2011-03-17
申请号：US12991961
申请日：2009-06-04
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima , Daisuke Mori , Akifumi Sano
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3457 , C23C14/358 , H01J37/32633 , H01J37/3266 , H01J37/3408 , H01J37/3458 , H01L21/2855
摘要： There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.
摘要翻译：提供了一种廉价的溅射装置，其中通过加速从靶分散的原子的电离可以稳定地进行自溅射。溅射装置具有：设置在真空室内的靶，以与待加工的基板W相对; 在靶的溅射表面前面形成磁场的磁体组件; 以及对具有负DC电位的目标进行充电的DC电源。第一线圈设置在靶的溅射表面的后表面的中心部分中。第一线圈电连接到第一电源和与目标的输出之间。当通过溅射电源将负电位充电到目标电极时，电力被充电到第一线圈，由此在溅射表面的前面产生磁场。

5. 发明授权

US06706155B2 Sputtering apparatus and film manufacturing method 有权
标题翻译：溅射装置和膜制造方法
公开(公告)号：US06706155B2
公开(公告)日：2004-03-16
申请号：US09939715
申请日：2001-08-28
申请人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima
发明人： Naoki Morimoto , Tomoyasu Kondo , Hideto Nagashima
IPC分类号： C23C1434
CPC分类号： H01J37/3438 , H01J37/3405
摘要： In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.
摘要翻译：为了形成高纵横比的薄膜，真空室内的靶与衬底台之间的空间被阳极电极和接地电极包围。阳极位于靶的侧面，施加正电压。接地电极位于衬底台的侧面并与地电位连接。对由阳极电极飞出的方向进行弯曲的溅射粒子的轨迹进行校正，并使其垂直于衬底台上的衬底的表面入射。因此，能够使入射到基板表面的溅射粒子的量增加并垂直入射; 并且可以形成高纵横比的薄膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式