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    • 6. 发明申请
    • Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device
    • 太阳能电池和太阳能电池的制造方法以及半导体装置的制造方法
    • US20090020158A1
    • 2009-01-22
    • US11918719
    • 2006-04-11
    • Hiroyuki OhtsukaMasatoshi TakahashiNaoki IshikawaShigenori SaisuToyohiro UeguriSatoyuki OjimaTakenori WatabeTakeshi AkatsukaTsutomu Onishi
    • Hiroyuki OhtsukaMasatoshi TakahashiNaoki IshikawaShigenori SaisuToyohiro UeguriSatoyuki OjimaTakenori WatabeTakeshi AkatsukaTsutomu Onishi
    • H01L31/00H01L21/22B32B9/00
    • H01L21/2254H01L31/022425H01L31/0682H01L31/18H01L31/1804Y02E10/547Y02P70/521
    • The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.
    • 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法,其中至少包括:含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂,以及 包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上,使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层,具有导电性的第二扩散层比第一扩散层的第二扩散层低,通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。 因此,可以提供制造太阳能电池的方法,该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池,并且通过简单且容易的方法,通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合,同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。