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1. 发明授权

US08253011B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method 有权
标题翻译：半导体衬底，电极形成方法和太阳能电池制造方法
公开(公告)号：US08253011B2
公开(公告)日：2012-08-28
申请号：US12309923
申请日：2007-08-02
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
IPC分类号： H01L31/00 , H01B1/22 , C04B41/51
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.
摘要翻译：本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构电极层，由至少一层形成并设置在第一电极层上; 其特征在于，所述上部电极层通过烧成总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量相对于上电极层中的总银含量高于第一电极层中的总银含量。结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

2. 发明申请

US20070249085A1 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20070249085A1
公开(公告)日：2007-10-25
申请号：US11727435
申请日：2007-03-27
申请人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
发明人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
IPC分类号： H01L31/0236
CPC分类号： H01L31/068 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.
摘要翻译：如下所述，制造太阳能电池的方法在从硅单晶锭切出的p型硅单晶衬底的第一主表面上形成大量的沟槽。首先，凹槽雕刻刀片的边缘部分从工作台的平坦基底进给表面突出预定高度。 p型硅单晶衬底沿着衬底馈送表面移动到旋转的凹槽雕刻刀片，同时保持其第一主表面与衬底馈送表面的紧密接触。然后，在这样雕刻的槽的内侧面上仅在其宽度方向的一侧上形成电极。

3. 发明授权

US08319096B2 Semiconductor substrate, method for forming electrode, and method for fabricating solar cell 有权
标题翻译：半导体基板，电极形成方法以及太阳能电池的制造方法
公开(公告)号：US08319096B2
公开(公告)日：2012-11-27
申请号：US12309229
申请日：2007-07-12
申请人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
发明人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
IPC分类号： H01L31/00 , H01B1/22 , C04B41/51
CPC分类号： H01L31/022425 , C03C8/14 , C03C8/18 , H01L21/2225 , H01L31/05 , H01L2224/48463 , H01L2224/73265 , H01L2924/3025 , Y02E10/50 , H01L2924/00
摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.
摘要翻译：本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

4. 发明申请

US20080196608A1 Screen Printing Plate and Screen Printing Apparatus 有权
标题翻译：丝网印刷和丝网印刷设备
公开(公告)号：US20080196608A1
公开(公告)日：2008-08-21
申请号：US11920766
申请日：2006-05-02
申请人： Satoyuki Ojima , Naoki Ishikawa , Hiroyuki Ohtsuka
发明人： Satoyuki Ojima , Naoki Ishikawa , Hiroyuki Ohtsuka
IPC分类号： B05C17/06
CPC分类号： B41F15/34 , B41F15/36 , B41N1/248 , B41P2215/12 , H05K3/1225 , H05K2203/0545
摘要： The present invention is a screen printing plate 1 in which at least an opening portion 2 that discharges a printing material for forming a target printing pattern 4 on a matter to be printed is provided in screen printing, and the screen printing plate is characterized in that the size of the opening portion 2 is reduced from the target printing pattern 4 and an opening end portion 3 of the opening portion 2 has a projection and recess pattern shape different from the target printing pattern shape. By this arrangement, bleeding of the printing material of the screen printing can be controlled and a high-quality and low-cost screen printing plate is provided which can print a target printing pattern accurately and with high transfer performance even for a fine design.
摘要翻译：本发明是一种丝网印刷板1，其中在丝网印刷中设置至少一个将要印刷的物体上的用于形成目标印刷图案4的印刷材料排出的开口部分2，丝网印刷板的特征在于：开口部2的尺寸从目标印刷图案4减小，开口部2的开口端部3具有与目标印刷图案形状不同的突起和凹部图案形状。通过这种布置，可以控制丝网印刷的印刷材料的渗色，并且提供了一种高品质和低成本的丝网印刷版，其可以精确地印刷目标印刷图案并且具有高转印性能，即使是精细设计。

5. 发明授权

US07355114B2 Solar cell and its manufacturing method 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US07355114B2
公开(公告)日：2008-04-08
申请号：US10472115
申请日：2002-03-19
申请人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
发明人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
IPC分类号： H01L31/0248 , H01L31/068
CPC分类号： H01L31/068 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An OECO solar cell using a semiconductor single crystal substrate having a plurality of grooves, wherein a minimum groove depth h of each groove always satisfies the relation of h≧W1tan θ where θ represents an angle between a line connecting the lower end, along the thickness-wise direction of the semiconductor single crystal substrate, of an electrode formed in the groove and the upper end of the inner side face of the same groove having no electrode formed thereon, and a reference line normal to the thickness-wise direction, and W1 represents a distance between both opening edges of the groove; wherein the semiconductor single crystal substrate has thickness decreasing from a first side of a first main surface to a second side opposed to the first side; and wherein the plurality of grooves have a depth distribution of being deepest at a thickest position of the substrate, and a gradually becoming shallower towards a thinnest position of the substrate.
摘要翻译：使用具有多个凹槽的半导体单晶基板的OECO太阳能电池，其中每个凹槽的最小凹槽深度h总是满足h> = W 1tanθ的关系，其中θ表示连接沿着半导体单晶基板的厚度方向的下端，形成在槽中的电极和形成在其上的没有电极的同一槽的内侧面的上端的线，以及参考线垂直于厚度方向，W 1 1表示槽的两个开口边缘之间的距离; 其中所述半导体单晶衬底具有从第一主表面的第一侧到与所述第一侧相对的第二侧的厚度; 并且其中所述多个凹槽具有在所述基底的最厚位置处最深的深度分布，并且朝向所述基底的最薄位置逐渐变浅。

6. 发明授权

US06963024B2 Solar cell module and its installing module 有权
标题翻译：太阳能电池组件及其安装模块
公开(公告)号：US06963024B2
公开(公告)日：2005-11-08
申请号：US10250529
申请日：2002-01-30
申请人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe , Takao Abe
发明人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe , Takao Abe
IPC分类号： E04D13/18 , H01L31/04 , H01L31/042
CPC分类号： H01L31/022425 , F24S30/425 , F24S2030/16 , H01L31/02 , H01L31/035281 , H01L31/03529 , H02S20/23 , H02S20/24 , H02S20/30 , Y02B10/12 , Y02E10/47 , Y02E10/50
摘要： A solar cell module 60 has a plurality of solar cells 14 having a plurality of parallel grooves 8 on the individual light-receiving surfaces thereof, each of the grooves having an electrode 5 for extracting output on the inner side face (electrode-forming inner side face) on one side in the width-wise direction thereof; and a support 10, 50 for supporting the solar cells 14 in an integrated manner so as to direct the light-receiving surfaces upward. The annual power output can be increased by adjusting the direction of arrangement of the electrode-forming inner side faces of the grooves 8 while taking the angle of inclination β of the light-receiving surface of the individual as-installed solar cells 14 relative to the horizontal plane and the latitude δ of the installation site of the solar cell module into consideration.
摘要翻译：太阳能电池模块60具有多个太阳能电池14，该多个太阳能电池14在其各个光接收表面上具有多个平行槽8，每个槽具有用于在内侧面（电极形成内侧）面）在其横向方向上的一侧; 以及用于以集成的方式支撑太阳能电池14以将光接收表面向上引导的支撑件10,50。可以通过调节槽8的电极形成内侧面的布置方向，同时采取相对于相应的安装状态的太阳能电池单元14的受光面的倾斜角β来增加年功率输出。水平面和太阳能电池模块安装位置的纬度三角形。

7. 发明授权

US08766089B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method 有权
标题翻译：半导体衬底，电极形成方法和太阳能电池制造方法
公开(公告)号：US08766089B2
公开(公告)日：2014-07-01
申请号：US13559813
申请日：2012-07-27
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
IPC分类号： H01L31/00 , H05K3/24 , H01L31/0224
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
摘要翻译：一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：具有直接连接到所述半导体衬底的第一电极层的多层结构，以及由至少一个并设置在第一电极层上。上电极层通过烧结总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量与相对于上电极层中的总银含量高于第一电极层中的总银含量。

8. 发明授权

US07615391B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US07615391B2
公开(公告)日：2009-11-10
申请号：US11727435
申请日：2007-03-27
申请人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
发明人： Satoyuki Ojima , Hiroyuki Ohtsuka , Masatoshi Takahashi , Takenori Watabe
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected out from a flat substrate feeding surface of a working table by a predetermined height. The p-type silicon single crystal substrate is moved along the substrate feeding surface towards the rotating groove-carving blade while keeping a close contact of the first main surface thereof with the substrate feeding surface. Electrodes are then formed on the inner side face of thus-carved grooves only on one side in the width-wise direction thereof.
摘要翻译：如下所述，制造太阳能电池的方法在从硅单晶锭切出的p型硅单晶衬底的第一主表面上形成大量的沟槽。首先，凹槽雕刻刀片的边缘部分从工作台的平坦基底进给表面突出预定高度。 p型硅单晶衬底沿着衬底馈送表面移动到旋转的凹槽雕刻刀片，同时保持其第一主表面与衬底馈送表面的紧密接触。然后，在这样雕刻的槽的内侧面上仅在其宽度方向的一侧上形成电极。

9. 发明申请

US20070215203A1 Electrode Material, Solar Cell, And Method For Producing Solar Cell 有权
标题翻译：电极材料，太阳能电池和太阳能电池生产方法
公开(公告)号：US20070215203A1
公开(公告)日：2007-09-20
申请号：US11631480
申请日：2005-06-15
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Haruhiko Kano , Masanobu Yano
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Haruhiko Kano , Masanobu Yano
IPC分类号： H01L31/00
CPC分类号： H01B1/16 , H01L31/022433 , Y02E10/50
摘要： The present invention is an electrode material comprising at least, a silver powder, a glass frit, and an organic vehicle, wherein a rate of Ag content of the electrode material is 75 wt % to 95 wt %, and a ratio of contents of Ag grains having an average grain diameter of 0.5 μm to 3 μm and Ag grains having an average grain diameter of 4 μm to 8 μm in the electrode material is (the Ag grains having an average grain diameter of 0.5 μm to 3 μm):(the Ag grains having an average grain diameter of 4 μm to 8 μm)=20-80 wt %:80-20 wt %, and a solar cell comprising an electrode formed by using the electrode material. Thereby, an electrode material that can be stably filled in an electrode groove formed on a semiconductor device and that an electrode with narrow line width and small resistance loss can be easily formed by, and a solar cell with high power having an electrode formed by using the electrode material are provided.
摘要翻译：本发明是至少包含银粉，玻璃料和有机载体的电极材料，其中电极材料的Ag含量的比例为75重量％〜95重量％，Ag的含量比例（平均粒径为0.5〜3μm的Ag粒子）:(平均粒径为0.5〜3μm的Ag粒子）（平均粒径为0.5〜3μm的Ag粒子）:(平均粒径为0.5〜3μm的Ag粒子）平均粒径为4μm〜8μm的Ag粒子）= 20〜80wt％：80〜20wt％，以及包含使用电极材料形成的电极的太阳能电池。由此，可以容易地形成能够稳定地填充在形成于半导体装置上的电极槽中的电极材料，并且能够容易地形成具有窄线宽度和小电阻损失的电极，并且可以容易地形成具有通过使用电极形成的电极的具有高功率的太阳能电池提供电极材料。

10. 发明申请

US20120289044A1 SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD 有权
标题翻译：半导体基板，电极形成方法和太阳能电池制造方法
公开(公告)号：US20120289044A1
公开(公告)日：2012-11-15
申请号：US13559813
申请日：2012-07-27
申请人： Naoki ISHIKAWA , Satoyuki OJIMA , Hiroyuki OHTSUKA , Takenori WATABE , Shigenori SAISU , Toyohiro UEGURI
发明人： Naoki ISHIKAWA , Satoyuki OJIMA , Hiroyuki OHTSUKA , Takenori WATABE , Shigenori SAISU , Toyohiro UEGURI
IPC分类号： H01L21/283
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
摘要翻译：一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：具有直接连接到所述半导体衬底的第一电极层的多层结构，以及由至少一个并设置在第一电极层上。上电极层通过烧结总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量与相对于上电极层中的总银含量高于第一电极层中的总银含量。

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