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1. 发明申请

US20090020158A1 Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device 审中-公开
标题翻译：太阳能电池和太阳能电池的制造方法以及半导体装置的制造方法
公开(公告)号：US20090020158A1
公开(公告)日：2009-01-22
申请号：US11918719
申请日：2006-04-11
申请人： Hiroyuki Ohtsuka , Masatoshi Takahashi , Naoki Ishikawa , Shigenori Saisu , Toyohiro Ueguri , Satoyuki Ojima , Takenori Watabe , Takeshi Akatsuka , Tsutomu Onishi
发明人： Hiroyuki Ohtsuka , Masatoshi Takahashi , Naoki Ishikawa , Shigenori Saisu , Toyohiro Ueguri , Satoyuki Ojima , Takenori Watabe , Takeshi Akatsuka , Tsutomu Onishi
IPC分类号： H01L31/00 , H01L21/22 , B32B9/00
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.
摘要翻译：本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，其中至少包括：含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂，以及包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上，使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层，具有导电性的第二扩散层比第一扩散层的第二扩散层低，通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。因此，可以提供制造太阳能电池的方法，该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池，并且通过简单且容易的方法，通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合，同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。

2. 发明授权

US08766089B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method 有权
标题翻译：半导体衬底，电极形成方法和太阳能电池制造方法
公开(公告)号：US08766089B2
公开(公告)日：2014-07-01
申请号：US13559813
申请日：2012-07-27
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
IPC分类号： H01L31/00 , H05K3/24 , H01L31/0224
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.
摘要翻译：一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：具有直接连接到所述半导体衬底的第一电极层的多层结构，以及由至少一个并设置在第一电极层上。上电极层通过烧结总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量与相对于上电极层中的总银含量高于第一电极层中的总银含量。

3. 发明授权

US08253011B2 Semiconductor substrate, electrode forming method, and solar cell fabricating method 有权
标题翻译：半导体衬底，电极形成方法和太阳能电池制造方法
公开(公告)号：US08253011B2
公开(公告)日：2012-08-28
申请号：US12309923
申请日：2007-08-02
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
IPC分类号： H01L31/00 , H01B1/22 , C04B41/51
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.
摘要翻译：本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构电极层，由至少一层形成并设置在第一电极层上; 其特征在于，所述上部电极层通过烧成总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量相对于上电极层中的总银含量高于第一电极层中的总银含量。结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

4. 发明申请

US20090243111A1 SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD 有权
标题翻译：半导体基板，电极形成方法和太阳能电池制造方法
公开(公告)号：US20090243111A1
公开(公告)日：2009-10-01
申请号：US12309923
申请日：2007-08-02
申请人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
发明人： Naoki Ishikawa , Satoyuki Ojima , Hiroyuki Ohtsuka , Takenori Watabe , Shigenori Saisu , Toyohiro Ueguri
IPC分类号： H01L23/532 , H01L21/283 , H01L31/18
CPC分类号： H05K3/248 , H01L31/022425 , H05K1/092 , H05K2201/0338 , H05K2203/1476 , Y02E10/50
摘要： The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 μm or greater and 8 μm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.
摘要翻译：本发明涉及一种其上形成有电极的半导体衬底，所述电极至少包括银和玻璃料，所述电极包括：由直接连接到半导体衬底的第一电极层和上层结构构成的多层结构电极层，由至少一层形成并设置在第一电极层上; 其中上电极层通过焙烧总银含量为75重量％以上且95重量％以下的导电性糊料形成，平均粒径为4μm以上且8μm以下的银粒子的含量相对于上电极层中的总银含量高于第一电极层中的总银含量。结果，可以通过简单的方法在半导体衬底上形成具有高纵横比的电极并且几乎不会有诸如断裂的不便。

5. 发明授权

US08319096B2 Semiconductor substrate, method for forming electrode, and method for fabricating solar cell 有权
标题翻译：半导体基板，电极形成方法以及太阳能电池的制造方法
公开(公告)号：US08319096B2
公开(公告)日：2012-11-27
申请号：US12309229
申请日：2007-07-12
申请人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
发明人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
IPC分类号： H01L31/00 , H01B1/22 , C04B41/51
CPC分类号： H01L31/022425 , C03C8/14 , C03C8/18 , H01L21/2225 , H01L31/05 , H01L2224/48463 , H01L2224/73265 , H01L2924/3025 , Y02E10/50 , H01L2924/00
摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.
摘要翻译：本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

6. 发明申请

US20090194151A1 Semiconductor substrate, method for forming electrode, and method for fabricating solar cell 有权
标题翻译：半导体基板，电极形成方法以及太阳能电池的制造方法
公开(公告)号：US20090194151A1
公开(公告)日：2009-08-06
申请号：US12309229
申请日：2007-07-12
申请人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
发明人： Naoki Ishikawa , Hiroyuki Ohtsuka , Takenori Watabe , Satoyuki Ojima , Toyohiro Ueguri
IPC分类号： H01L31/0224 , H01L21/02 , H01L21/28 , H01L23/48 , H01L31/10
CPC分类号： H01L31/022425 , C03C8/14 , C03C8/18 , H01L21/2225 , H01L31/05 , H01L2224/48463 , H01L2224/73265 , H01L2924/3025 , Y02E10/50 , H01L2924/00
摘要： The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.
摘要翻译：本发明涉及至少形成有电极的半导体衬底，其中电极具有包括多层结构的两层或多层的多层结构，至少直接接合到半导体衬底的第一电极层包含在含有Ti，Bi，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Fe，Co，Ni，Si，Al中的至少一种作为添加剂的添加剂， Ge，Sn，Pb和Zn，并且在形成于第一电极层上的电极层中，至少与电线接合的最上层电极层至少含有银和玻璃料，并且不含添加剂。这使得可以在半导体衬底上形成具有足够的粘合强度粘合到半导体衬底上的电极，并且通过降低接触电阻和互连电阻来以足够的粘合强度通过焊料粘附到电线上。

7. 发明授权

US08405176B2 Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste 有权
标题翻译：用于扩散的磷浆和利用磷糊生产太阳能电池的方法
公开(公告)号：US08405176B2
公开(公告)日：2013-03-26
申请号：US12933738
申请日：2009-03-18
申请人： Shintarou Tsukigata , Toshifumi Matsuoka , Kenji Yamamoto , Toyohiro Ueguri , Naoki Ishikawa , Hiroyuki Otsuka
发明人： Shintarou Tsukigata , Toshifumi Matsuoka , Kenji Yamamoto , Toyohiro Ueguri , Naoki Ishikawa , Hiroyuki Otsuka
IPC分类号： H01L27/14 , H01L21/02 , H01L31/00 , C08K5/49
CPC分类号： H01L31/18 , H01L21/2225 , H01L21/2254 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a phosphorus paste for diffusion that is used in continuous printing of a phosphorus paste for diffusion on a substrate by screen printing. The phosphorus paste for diffusion does not undergo a significant influence of ambient humidity on viscosity and has no possibility of thickening even after a large number of times of continuous printing. The phosphorus paste for diffusion is coated on a substrate by screen printing for diffusion layer formation on the substrate. The phosphorus paste for diffusion includes a doping agent containing phosphorus as a dopant for the diffusion layer, a thixotropic agent containing an organic binder and a solid matter, and an organic solvent. The doping agent is an organic phosphorus compound.
摘要翻译：公开了一种用于扩散的磷糊剂，其用于通过丝网印刷在基底上连续印刷用于扩散的磷糊料。用于扩散的磷糊剂不会在环境湿度对粘度方面产生显着影响，并且即使在大量连续印刷后也不会发生增稠。用于扩散的磷糊剂通过丝网印刷涂覆在基底上，用于在基底上形成扩散层。用于扩散的磷糊剂包括含磷作为扩散层的掺杂剂的掺杂剂，含有机粘合剂和固体物质的触变剂和有机溶剂。掺杂剂是有机磷化合物。

8. 发明申请

US20110045624A1 PHOSPHORUS PASTE FOR DIFFUSION AND PROCESS FOR PRODUCING SOLAR BATTERY UTILIZING THE PHOSPHORUS PASTE 有权
标题翻译：磷肥用于生产利用磷肥的太阳能电池的扩散和工艺
公开(公告)号：US20110045624A1
公开(公告)日：2011-02-24
申请号：US12933738
申请日：2009-03-18
申请人： Shintarou Tsukigata , Toshifumi Matsuoka , Kenji Yamamoto , Toyohiro Ueguri , Naoki Ishikawa , Hiroyuki Otsuka
发明人： Shintarou Tsukigata , Toshifumi Matsuoka , Kenji Yamamoto , Toyohiro Ueguri , Naoki Ishikawa , Hiroyuki Otsuka
IPC分类号： H01L21/22 , C08K5/49
CPC分类号： H01L31/18 , H01L21/2225 , H01L21/2254 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a phosphorus paste for diffusion that is used in continuous printing of a phosphorus paste for diffusion on a substrate by screen printing. The phosphorus paste for diffusion does not undergo a significant influence of ambient humidity on viscosity and has no possibility of thickening even after a large number of times of continuous printing. The phosphorus paste for diffusion is coated on a substrate by screen printing for diffusion layer formation on the substrate. The phosphorus paste for diffusion includes a doping agent containing phosphorus as a dopant for the diffusion layer, a thixotropic agent containing an organic binder and a solid matter, and an organic solvent. The doping agent is an organic phosphorus compound.
摘要翻译：公开了一种用于扩散的磷糊剂，其用于通过丝网印刷在基底上连续印刷用于扩散的磷糊料。用于扩散的磷糊剂不会在环境湿度对粘度方面产生显着影响，并且即使在大量连续印刷后也不会发生增稠。用于扩散的磷糊剂通过丝网印刷涂覆在基底上，用于在基底上形成扩散层。用于扩散的磷糊剂包括含磷作为扩散层的掺杂剂的掺杂剂，含有机粘合剂和固体物质的触变剂和有机溶剂。掺杂剂是有机磷化合物。

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