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1. 发明申请

US20100047049A1 VERTICAL WAFER BUFFERING SYSTEM 有权
标题翻译：垂直波浪缓冲系统
公开(公告)号：US20100047049A1
公开(公告)日：2010-02-25
申请号：US12196982
申请日：2008-08-22
申请人： NIR MERRY , Jacob Newman
发明人： NIR MERRY , Jacob Newman
IPC分类号： B65H1/00
CPC分类号： H01L21/67769 , Y10S414/14
摘要： A wafer buffering system is provided herein. In some embodiments, a wafer buffering system may include a frame having a vertical shaft disposed therethrough; two storage platforms, coupled to the frame on either side thereof, each to receive a wafer carrier thereon; and a transfer mechanism coupled to the vertical shaft and capable of vertical movement therealong and lateral movement along an x-axis extending in either direction from the frame at least sufficient to move over the two storage platforms. The transfer mechanism may further include a telescoping fork arm capable of laterally extending in a first direction and in a second direction corresponding to lateral positions of the two storage platforms on either side of the frame.
摘要翻译：本文提供了晶片缓冲系统。在一些实施例中，晶片缓冲系统可以包括具有穿过其设置的垂直轴的框架; 两个存储平台，耦合到其两侧的框架，每个用于在其上接收晶片载体; 以及耦合到所述竖直轴并且能够沿着所述竖直轴的垂直移动的转移机构，以及沿着从所述框架沿任一方向延伸的x轴的横向移动至少足以在所述两个存储平台上移动。传送机构还可以包括能够在第一方向和第二方向上横向延伸的伸缩叉臂，对应于框架两侧的两个存储平台的横向位置。

2. 发明申请

US20100116205A1 PROCESS EQUIPMENT ARCHITECTURE 审中-公开
标题翻译：过程设备架构
公开(公告)号：US20100116205A1
公开(公告)日：2010-05-13
申请号：US12266970
申请日：2008-11-07
申请人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
发明人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
IPC分类号： B05C11/00
CPC分类号： H01L21/6719
摘要： Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.
摘要翻译：本发明的实施例涉及对用于最小化制造设备占地面积要求的单基板多室处理平台架构的改进。现有技术的系统需要围绕所有侧面的显着的地板空间以允许适当的安装和维修。本发明的实施例提供了平台，其允许经由平台的前部和后部维护腔室和支撑系统，从而允许在制造设备内多个并排平台放置，同时提供平台组件的改进的可维护性。

3. 发明授权

US08317449B2 Multiple substrate transfer robot 有权
标题翻译：多基板传送机器人
公开(公告)号：US08317449B2
公开(公告)日：2012-11-27
申请号：US12049051
申请日：2008-03-14
申请人： Jacob Newman , Dinesh Kanawade , Nir Merry
发明人： Jacob Newman , Dinesh Kanawade , Nir Merry
IPC分类号： H01L21/677
CPC分类号： H01L21/67115 , H01L21/67754 , H01L21/68735 , H01L21/68771
摘要： Embodiments of multiple substrate transfer robots and substrate processing systems have been disclosed herein. In some embodiments, a multiple substrate transfer robot is provided and may include an arm capable of extending along a horizontal direction; and a wrist coupled to the arm and having a plurality of blades coupled thereto, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades. In some embodiments, a substrate processing system is provided and may include a substrate processing chamber having a plurality of susceptors, wherein each susceptor is vertically disposed and capable of holding a semiconductor substrate; and a substrate transfer robot having a plurality of blades for transferring a plurality of substrates to and from the processing chamber, each blade configured to horizontally support a substrate thereupon and vertically disposed with respect to each of the other blades.
摘要翻译：本文已经公开了多个基板传送机器人和基板处理系统的实施例。在一些实施例中，提供多个基板传送机器人，并且可以包括能够沿着水平方向延伸的臂; 以及手腕，其联接到所述臂并且具有耦合到其上的多个叶片，每个叶片构造成水平地支撑其上的基板并且相对于每个其它叶片垂直设置。在一些实施例中，提供了基板处理系统，并且可以包括具有多个基座的基板处理室，其中每个基座垂直设置并能够保持半导体基板; 以及基板传送机器人，其具有用于将多个基板传送到处理室和从处理室传送多个基板的多个叶片，每个叶片构造成水平地支撑其上的基板并且相对于每个其它叶片垂直设置。

4. 发明授权

US09508576B2 Process equipment architecture 有权
标题翻译：过程设备架构
公开(公告)号：US09508576B2
公开(公告)日：2016-11-29
申请号：US13486960
申请日：2012-06-01
申请人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
发明人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
IPC分类号： H01L21/67
CPC分类号： H01L21/6719
摘要： Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.
摘要翻译：本发明的实施例涉及对用于最小化制造设备占地面积要求的单基板多室处理平台架构的改进。现有技术的系统需要围绕所有侧面的显着的地板空间以允许适当的安装和维修。本发明的实施例提供了平台，其允许经由平台的前部和后部维护腔室和支撑系统，从而允许在制造设备内多个并排平台放置，同时提供平台组件的改进的可维护性。

5. 发明申请

US20120235339A1 PROCESS EQUIPMENT ARCHITECTURE 有权
标题翻译：过程设备架构
公开(公告)号：US20120235339A1
公开(公告)日：2012-09-20
申请号：US13486960
申请日：2012-06-01
申请人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
发明人： Jacob Newman , Dinesh Kanawade , Miriam Schwartz , Nir Merry , Michael Thomas Haag
IPC分类号： B23Q3/00
CPC分类号： H01L21/6719
摘要： Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.
摘要翻译：本发明的实施例涉及对用于最小化制造设备占地面积要求的单基底多室处理平台架构的改进。现有技术的系统需要围绕所有侧面的显着的地板空间以允许适当的安装和维修。本发明的实施例提供了平台，其允许经由平台的前部和后部维护腔室和支撑系统，从而允许在制造设备内多个并排平台放置，同时提供平台组件的改进的可维护性。

6. 发明授权

US08894344B2 Vertical wafer buffering system 有权
标题翻译：垂直晶片缓冲系统
公开(公告)号：US08894344B2
公开(公告)日：2014-11-25
申请号：US12196982
申请日：2008-08-22
申请人： Nir Merry , Jacob Newman
发明人： Nir Merry , Jacob Newman
IPC分类号： B65G1/04 , H01L21/677
CPC分类号： H01L21/67769 , Y10S414/14
摘要： A wafer buffering system is provided herein. In some embodiments, a wafer buffering system may include a frame having a vertical shaft disposed therethrough; two storage platforms, coupled to the frame on either side thereof, each to receive a wafer carrier thereon; and a transfer mechanism coupled to the vertical shaft and capable of vertical movement therealong and lateral movement along an x-axis extending in either direction from the frame at least sufficient to move over the two storage platforms. The transfer mechanism may further include a telescoping fork arm capable of laterally extending in a first direction and in a second direction corresponding to lateral positions of the two storage platforms on either side of the frame.
摘要翻译：本文提供了晶片缓冲系统。在一些实施例中，晶片缓冲系统可以包括具有穿过其设置的垂直轴的框架; 两个存储平台，耦合到其两侧的框架，每个用于在其上接收晶片载体; 以及耦合到所述竖直轴并且能够沿着所述竖直轴的垂直移动的转移机构，以及沿着从所述框架沿任一方向延伸的x轴的横向移动至少足以在所述两个存储平台上移动。传送机构还可以包括能够在第一方向和第二方向上横向延伸的伸缩叉臂，对应于框架两侧的两个存储平台的横向位置。

7. 发明申请

US20140234057A1 Apparatus And Methods For Moving Wafers 审中-公开
标题翻译：移动晶片的装置和方法
公开(公告)号：US20140234057A1
公开(公告)日：2014-08-21
申请号：US14180662
申请日：2014-02-14
申请人： Jacob Newman
发明人： Jacob Newman
IPC分类号： H01L21/677
CPC分类号： H01L21/67742 , H01L21/67748
摘要： Provided are apparatus and methods for simultaneously swapping a processed wafer with an unprocessed wafer. A robot with a rotatable stage, a first blade assembly and second blade assembly extends both assemblies at the same time in opposite directions to pick up both a processed and unprocessed wafer. Rotation of the robot allows the unprocessed wafer to be placed in the position previously occupied by the processed wafer and vice versa.
摘要翻译：提供了用于用未处理的晶片同时交换处理的晶片的装置和方法。具有可旋转台架，第一叶片组件和第二叶片组件的机器人在相反的方向上同时延伸两个组件以拾取处理的和未处理的晶片。机器人的旋转允许将未处理的晶片放置在先前由处理的晶片占据的位置，反之亦然。

8. 发明申请

US20100062603A1 SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF 有权
标题翻译：适用于窄幅倾斜应用的半导体器件及其制造方法
公开(公告)号：US20100062603A1
公开(公告)日：2010-03-11
申请号：US12558370
申请日：2009-09-11
申请人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
发明人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
IPC分类号： H01L21/311 , H01L21/28
CPC分类号： H01L29/788 , H01L21/67167 , H01L21/67207 , H01L21/76232 , H01L27/11521
摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：适用于窄间距应用的半导体器件及其制造方法在本文中描述。在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

9. 发明授权

US09685186B2 HDD pattern implant system 有权
公开(公告)号：US09685186B2
公开(公告)日：2017-06-20
申请号：US12703897
申请日：2010-02-11
申请人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
发明人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
IPC分类号： G11B5/85 , C23C16/00 , G11B5/82 , C23F1/00 , H01L21/673 , G11B5/84 , H01L21/677 , G11B5/855 , C23C14/48 , H01L21/687 , C23C14/50
CPC分类号： G11B5/82 , C23C14/48 , C23C14/50 , C23C16/00 , C23F1/00 , G11B5/84 , G11B5/855 , H01L21/673 , H01L21/677 , H01L21/687
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

10. 发明授权

US08871645B2 Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof 有权
标题翻译：适用于窄间距应用的半导体器件及其制造方法
公开(公告)号：US08871645B2
公开(公告)日：2014-10-28
申请号：US12558370
申请日：2009-09-11
申请人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
发明人： Udayan Ganguly , Yoshita Yokota , Jing Tang , Sunderraj Thirupapuliyur , Christopher Sean Olsen , Shiyu Sun , Tze Wing Poon , Wei Liu , Johanes Swenberg , Vicky U. Nguyen , Swaminathan Srinivasan , Jacob Newman
IPC分类号： H01L21/311 , H01L27/115 , H01L21/67 , H01L21/762
CPC分类号： H01L29/788 , H01L21/67167 , H01L21/67207 , H01L21/76232 , H01L27/11521
摘要： Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：适用于窄间距应用的半导体器件及其制造方法在本文中描述。在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

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