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1. 发明授权

US5481484A Mixed mode simulation method and simulator 失效
标题翻译：混合模式仿真方法和模拟器
公开(公告)号：US5481484A
公开(公告)日：1996-01-02
申请号：US953533
申请日：1992-09-28
申请人： Munehiro Ogawa, deceased , Masato Iwabuchi , Hitoshi Sugihara , Saburo Hojo , Masami Kinoshita , Osamu Yamashiro , Goichi Yokomizo , Mikako Miyama
发明人： Munehiro Ogawa, deceased , Masato Iwabuchi , Hitoshi Sugihara , Saburo Hojo , Masami Kinoshita , Osamu Yamashiro , Goichi Yokomizo , Mikako Miyama
IPC分类号： G06F11/25 , G01R31/3167 , G06F17/50 , G06J1/00
CPC分类号： G06F17/5022 , G01R31/3167 , G06F17/5036
摘要： A mixed mode simulation method and apparatus are provided for highly accurately simulating the total characteristics of a digital analyzed circuit portion and an analog analyzed circuit portion, which are both subjected to mixed mode simulation, in consideration of the influence exerted on the analog analyzed circuit portion by a current consumed by the digital analyzed circuit portion. More particularly, a current value of an equivalent circuit for current calculation modeled for providing the analog analyzed circuit portion with a current generated due to an operating state of the digital analyzed circuit portion realized by logic simulation is determined in synchronism with the logic simulation, and the equivalent circuit for current calculation derived thereby is composed with the analog analyzed circuit portion, and this composite circuit is subjected to circuit simulation.
摘要翻译：考虑到对模拟分析电路部分的影响，提供混合模式模拟方法和装置，用于高精度地模拟数字分析电路部分和模拟分析电路部分的总体特性，它们都经过混合模式模拟由数字分析电路部分消耗的电流。更具体地，与逻辑模拟同步地确定由模拟分析电路部分提供由于由逻辑模拟实现的数字分析电路部分的操作状态而产生的电流的电流计算的等效电路的电流值，并且由此得到的电流计算的等效电路由模拟分析电路部分组成，该复合电路进行电路仿真。

2. 发明授权

US5159260A Reference voltage generator device 失效
标题翻译：参考电压发生器装置
公开(公告)号：US5159260A
公开(公告)日：1992-10-27
申请号：US4307
申请日：1987-01-07
申请人： Kanji Yoh , Osamu Yamashiro , Satoshi Meguro , Koichi Nagasawa , Kotaro Nishimura , Harumi Wakimoto , Kazutaka Narita
发明人： Kanji Yoh , Osamu Yamashiro , Satoshi Meguro , Koichi Nagasawa , Kotaro Nishimura , Harumi Wakimoto , Kazutaka Narita
IPC分类号： G05F3/24 , G11C5/14 , G11C11/411 , G11C11/417 , H01L27/088 , H01L29/49 , H03F3/45 , H03K3/0231 , H03K3/0233 , H03K3/3565 , H03K5/24 , H03K19/003 , H03K19/0185
CPC分类号： G11C11/4113 , G05F3/245 , G11C11/417 , G11C5/143 , G11C5/147 , H01L27/088 , H01L29/4983 , H03F3/45179 , H03F3/45744 , H03F3/45748 , H03K19/00384 , H03K19/018507 , H03K19/018514 , H03K3/0231 , H03K3/02337 , H03K3/3565 , H03K5/2481 , H03F2203/45394
摘要： This reference voltage generator device detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, and which have Fermi energy levels of values different from each other. The channels of the first and second IGFETs have an identical conductivity type. On the basis of a self-alignment structure, at least those parts of first and second polycrystalline semiconductor regions being the gate electrodes of the first and second IGFETs which are proximate to source and drain regions are doped with the same impurity as that of the source and drain regions, and a central part of one of the first and second polycrystalline semiconductor regions is doped with an impurity of a selected one of the first conductivity type and the second conductivity type.
摘要翻译：该参考电压发生器装置检测与半导体的能隙对应的电压或与其接近的值的电压或基于半导体的能级的电压，并产生检测电压作为参考电压。通过检测第一和第二绝缘栅极场效应晶体管（IGFET）的阈值电压的差异来产生参考电压。第一和第二IGFET的栅电极形成在基本相同条件下形成在相同半导体衬底的不同表面区域上的栅极绝缘膜上。第一和第二IGFET的栅电极分别由选自第一导电类型的半导体，第二导电类型的半导体和由相同的半导体材料制成的本征半导体的两个半导体制成，并且具有费米能量水平值彼此不同。第一和第二IGFET的通道具有相同的导电类型。基于自对准结构，至少第一和第二多晶半导体区域的那些部分是靠近源区和漏区的第一和第二IGFET的栅电极，其掺杂与源的相同杂质和漏极区域，并且第一和第二多晶半导体区域之一的中心部分掺杂有选择的第一导电类型和第二导电类型的杂质。

3. 发明授权

US4020367A Constant-current circuit 失效
标题翻译：恒流电路
公开(公告)号：US4020367A
公开(公告)日：1977-04-26
申请号：US687510
申请日：1976-05-18
申请人： Osamu Yamashiro , Shunji Shimada
发明人： Osamu Yamashiro , Shunji Shimada
IPC分类号： G05F3/24 , H02J1/04 , G05F1/52 , H03K1/12
CPC分类号： G05F3/247 , G05F3/245
摘要： A constant-current circuit comprising a first enhancement type FET, a depletion type FET having its drain and source connected to the drain and gate of the first enhancement type FET respectively, a second enhancement type FET having its drain and source connected to the gate and source of the first enhancement type FET and a series connection of two impedance elements having its ends connected to the source of the depletion type FET and to the source of the second enhancement type FET, the juncture between the two impedance elements being connected to the gate of the second enhancement type FET, whereby the constant-current characteristics of such constant-current circuits are checked from being dispersed.
摘要翻译：一种恒流电路，包括第一增强型FET，耗尽型FET，其漏极和源极分别连接到第一增强型FET的漏极和栅极;第二增强型FET，其漏极和源极连接到栅极，第一增强型FET的源极以及其端部连接到耗尽型FET的源极和第二增强型FET的源极的两个阻抗元件的串联连接，两个阻抗元件之间的接合部连接到栅极的第二增强型FET，从而分散这些恒流电路的恒流特性。

4. 发明授权

US4559694A Method of manufacturing a reference voltage generator device 失效
标题翻译：制造参考电压发生器装置的方法
公开(公告)号：US4559694A
公开(公告)日：1985-12-24
申请号：US484351
申请日：1983-04-12
申请人： Kanji Yoh , Osamu Yamashiro , Satoshi Meguro
发明人： Kanji Yoh , Osamu Yamashiro , Satoshi Meguro
IPC分类号： G05F3/24 , G11C5/14 , G11C11/411 , G11C11/417 , H01L27/088 , H01L29/49 , H03F3/45 , H03K3/0231 , H03K3/0233 , H03K3/3565 , H03K5/24 , H03K19/003 , H03K19/0185 , H01L21/64
CPC分类号： H03F3/45179 , G05F3/245 , G11C11/4113 , G11C11/417 , G11C5/143 , G11C5/147 , H01L27/088 , H01L29/4983 , H03F3/45744 , H03K19/00384 , H03K19/018507 , H03K19/018514 , H03K3/0231 , H03K3/02337 , H03K3/3565 , H03K5/2481 , H03F2203/45394 , Y10S148/053 , Y10S148/07
摘要： A method is provided for manufacturing a reference voltage generator device which detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, but which have Fermi energy levels of values different from each other.
摘要翻译：提供了一种用于制造基准电压发生器装置的方法，该装置检测对应于半导体的能隙的电压或接近其的值的电压或基于半导体的能级的电压，并产生检测电压作为参考电压。通过检测第一和第二绝缘栅极场效应晶体管（IGFET）的阈值电压的差异来产生参考电压。第一和第二IGFET的栅电极形成在基本相同条件下形成在相同半导体衬底的不同表面区域上的栅极绝缘膜上。第一和第二IGFET的栅电极分别由选自第一导电类型的半导体，第二导电类型的半导体和由相同半导体材料制成的本征半导体，但具有费米的两个半导体能量水平值彼此不同。

5. 发明授权

US4039973A Initiation circuit in a crystal-controlled oscillator 失效
标题翻译：晶体振荡器中的启动电路
公开(公告)号：US4039973A
公开(公告)日：1977-08-02
申请号：US677065
申请日：1976-04-15
申请人： Osamu Yamashiro
发明人： Osamu Yamashiro
IPC分类号： H03B5/32 , G04F5/06 , H03B5/36 , H03K3/354 , H03L3/00
CPC分类号： H03L3/00 , G04F5/06 , H03K3/3545
摘要： In a crystal-controlled oscillator circuit comprising a complementary-MOS inverter provided with a crystal in the feed-back circuit, an initiation circuit is provided which comprises another complementary-MOS inverter connected in parallel to said MOS inverter only at the time of initiation. This oscillator circuit includes a parallel circuit connection of two complementary MOS inverters at the time of initiation and hence has a large driving power and a short oscillation initiation time. Because of rendering one complementary MOS inverter to be cut off at the time of normal oscillation, the power consumption is reduced.

6. 再颁专利

USRE31749E Class B FET amplifier circuit 失效
标题翻译： B类FET放大电路
公开(公告)号：USRE31749E
公开(公告)日：1984-11-27
申请号：US168777
申请日：1980-07-11
申请人： Osamu Yamashiro
发明人： Osamu Yamashiro
IPC分类号： G04F5/06 , H01L21/822 , H01L27/04 , H03B5/36 , H03F3/20 , H03F3/213 , H03F3/30 , H03F3/34 , H03F3/345 , H03F3/347 , H03K19/0948
CPC分类号： G04F5/06 , H03F3/3028 , H03K19/0948
摘要： A complementary inverter amplifier circuit comprising a complementary inverter including a p-channel MIS FET connected to a first source potential, an n-channel MIS FET connected to a second source potential, the gate of the two FETs being applied with a common linear input, respective load resistors connected to the drains of the complementary FETs, an output being derived from the interconnection point of the load resistors or from the drains of the FETs, and a bias resistor connected between the gate and the drain of each of the complementary FETs, the input being supplied to the gates of the FETs through respective capacitors. The p-channel FET and n-channel FET are individually biased so that the circuit may serve as a class B push pull amplifier of low power consumption.

7. 发明授权

US4553098A Battery checker 失效
标题翻译：电池检查器
公开(公告)号：US4553098A
公开(公告)日：1985-11-12
申请号：US484263
申请日：1983-04-12
申请人： Kanji Yoh , Osamu Yamashiro
发明人： Kanji Yoh , Osamu Yamashiro
IPC分类号： G05F3/24 , G11C5/14 , G11C11/411 , G11C11/417 , H01L27/088 , H01L29/49 , H03F3/45 , H03K3/0231 , H03K3/0233 , H03K3/3565 , H03K5/24 , H03K19/003 , H03K19/0185 , G01N27/46
CPC分类号： H03K19/00384 , G05F3/245 , G11C11/4113 , G11C11/417 , G11C5/143 , G11C5/147 , H01L27/088 , H01L29/4983 , H03F3/45179 , H03F3/45744 , H03F3/45748 , H03K19/018507 , H03K19/018514 , H03K3/0231 , H03K3/02337 , H03K3/3565 , H03K5/2481 , H03F2203/45394
摘要： A battery checker utilizes a reference voltage generator device which detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, but which have Fermi energy levels of values different from each other.
摘要翻译：电池检查器利用检测与半导体的能隙对应的电压或与其接近的值的电压的基准电压发生器装置或基于半导体的能级的电压，并将检测到的电压作为参考电压。通过检测第一和第二绝缘栅极场效应晶体管（IGFET）的阈值电压的差异来产生参考电压。第一和第二IGFET的栅电极形成在基本相同条件下形成在相同半导体衬底的不同表面区域上的栅极绝缘膜上。第一和第二IGFET的栅电极分别由选自第一导电类型的半导体，第二导电类型的半导体和由相同半导体材料制成的本征半导体，但具有费米的两个半导体能量水平值彼此不同。

8. 发明授权

US4322639A Voltage detection circuit 失效
标题翻译：电压检测电路
公开(公告)号：US4322639A
公开(公告)日：1982-03-30
申请号：US886425
申请日：1978-03-14
申请人： Osamu Yamashiro
发明人： Osamu Yamashiro
IPC分类号： G01R19/165 , G04C10/04 , H03K5/24 , H03K5/153
CPC分类号： G01R19/16519 , G04C10/04 , H03K5/249
摘要： A voltage detection circuit adapted for use in an electronic timepiece in which a source voltage from a battery power source, etc. is voltage-divided and applied to an input of a logic circuit including complementary MIS FETs so as to compare the divided source voltage with a reference potential level and to detect whether the source voltage is above a predetermined value or not. In the logic circuit, the logic threshold is set in the neighborhood of the threshold voltage of one MIS FET to establish a reference potential level. Advantages are provided in integrating the circuit in a semiconductor integrated circuit such that parameters relevant to the manufacturing processes do not influence the reference potential level very much and the dispersion in the detected voltage due to the fluctuations in the manufacturing processes are minimized.
摘要翻译：一种适用于电子计时器的电压检测电路，其中来自电池电源等的源电压被分压并施加到包括互补MIS FET的逻辑电路的输入端，以便将分压的源极电压与参考电位电平并检测源极电压是否高于预定值。在逻辑电路中，将逻辑阈值设置在一个MIS FET的阈值电压附近，以建立参考电位电平。提供了将电路集成在半导体集成电路中的优点，使得与制造工艺相关的参数不会非常影响参考电位电平，并且由于制造过程中的波动而使检测到的电压的偏差最小化。

9. 发明授权

US4211985A Crystal oscillator using a class B complementary MIS amplifier 失效
标题翻译：晶体振荡器采用B类互补的MIS放大器
公开(公告)号：US4211985A
公开(公告)日：1980-07-08
申请号：US900321
申请日：1978-04-26
申请人： Osamu Yamashiro
发明人： Osamu Yamashiro
IPC分类号： G04F5/06 , H03B5/36 , H03F3/30 , H03K19/0948
CPC分类号： H03F3/3028 , G04F5/06 , H03B5/364 , H03K19/0948
摘要： In oscillators such as those used in electronic watches, low power consumption is quite desirable. To accomplish this, an oscillator is provided including a complementary inverter amplifier circuit comprising a complementary inverter including a p-channel MIS FET connected to a first source potential, an n-channel MIS FET connected to a second source potential, and the gate of the two FETs being applied with a common linear input. Respective load resistors are connected to the drains of the complementary FETs, an output being derived from the interconnection point of the load resistors or from the drains of the FETs. Further, a bias resistor is connected between the gate and the drain of each of the complementary FETs, the input being supplied to the gates of the FETs through respective capacitors. The p-channel FET and n-channel FET are individually biased so that the circuit may serve as a class B push pull amplifier of low power consumption.
摘要翻译：在诸如用于电子手表的振荡器中，低功耗是非常可取的。为了实现这一点，提供了一种振荡器，其包括互补反相放大器电路，其包括互连反相器，该互补反相器包括连接到第一源极电位的p沟道MIS FET，连接到第二源极电位的n沟道MIS FET，以及栅极两个FET被施加一个共同的线性输入。各个负载电阻连接到互补FET的漏极，输出源自负载电阻器的互连点或FET的漏极。此外，偏置电阻器连接在每个互补FET的栅极和漏极之间，输入通过相应的电容器提供给FET的栅极。 p沟道FET和n沟道FET被单独偏置，使得该电路可以用作低功耗的B类推挽放大器。

10. 发明授权

US4031456A Constant-current circuit 失效
标题翻译：恒流电路
公开(公告)号：US4031456A
公开(公告)日：1977-06-21
申请号：US608731
申请日：1975-08-28
申请人： Shunji Shimada , Yoshikazu Hatsukano , Osamu Yamashiro
发明人： Shunji Shimada , Yoshikazu Hatsukano , Osamu Yamashiro
IPC分类号： G05F3/24 , G05F3/08
CPC分类号： G05F3/247
摘要： A constant-current circuit has a depletion type FET and a series circuit consisting of an impedance element and an enhancement type FET connected in parallel between two terminals. The gate electrodes of the respective FET's are connected to a juncture between the impedance element and the enhancement type FET, and current which flows through the depletion type FET is set to be sufficiently larger than a current which flows through the series circuit. The voltage across the enhancement type FET is made substantially equal to a threshold voltage thereof, whereby the constant current characteristics of such constant-current circuits are checked from being dispersed.
摘要翻译：恒流电路具有耗尽型FET和由两个端子之间并联连接的阻抗元件和增强型FET组成的串联电路。各个FET的栅电极连接到阻抗元件和增强型FET之间的接合处，并且流过耗尽型FET的电流被设定为充分大于流过串联电路的电流。使增强型FET两端的电压基本上等于其阈值电压，从而分散这些恒流电路的恒定电流特性。

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