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1. 发明授权

US4307319A Semiconductor layer of oxygen depletion type cerium oxide or lead oxide 失效
标题翻译：半导体层的氧耗尽型氧化铈或氧化铅
公开(公告)号：US4307319A
公开(公告)日：1981-12-22
申请号：US921948
申请日：1978-07-05
申请人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
发明人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/451
摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要翻译：光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

2. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

3. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

4. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

5. 发明授权

US4233506A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4233506A
公开(公告)日：1980-11-11
申请号：US903161
申请日：1978-05-05
申请人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： G02B6/42 , G02B27/00 , G02B27/02 , G06K9/20 , H01L27/144 , H04N1/028 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要翻译：一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

6. 发明授权

US4121537A Apparatus for vacuum deposition 失效
标题翻译：真空沉积设备
公开(公告)号：US4121537A
公开(公告)日：1978-10-24
申请号：US779795
申请日：1977-03-21
申请人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
发明人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
IPC分类号： C23C14/54 , B05C11/00 , C23C13/08
CPC分类号： C23C14/546
摘要： An apparatus for vacuum deposition comprising a turn-table for holding substrates for deposition, and a plurality of evaporation boats arranged in opposition to a circumferential part of the turn-table, the turn-table being rotated at deposition whereby vapors from the respective boats can be cyclically accumulated and stuck onto the substrates, further comprises at least one film-thickness monitor which is fixed to the turn-table and which detects the quantity of a deposited substance of one layer stuck every time the substrates pass over each boat, and means to receive a signal from the film-thickness monitor and divide the signal time sequentially, thereby detecting at least one of the deposition rate and the total amount of the vapor from each boat, and to control the quantity of the vapor arriving to the substrates for deposition from each boat while comparing the detected value with a predetermined value.
摘要翻译：一种用于真空沉积的装置，包括用于保持用于沉积的基板的转台以及与转台的圆周部分相对布置的多个蒸发舟，所述转台在沉积下旋转，从而来自各个船的蒸气可以进一步包括至少一个薄膜厚度监测器，该膜厚监测器固定在转台上，每隔一个基板通过每个船只就检测一层沉积物质的量;以及装置接收来自薄膜厚度监视器的信号并依次划分信号时间，从而检测来自每个船的蒸气的沉积速率和总量中的至少一个，并且控制到达基板的蒸气的量在将检测值与预定值进行比较时，从每个船的沉积。

7. 发明授权

US4429325A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4429325A
公开(公告)日：1984-01-31
申请号：US206780
申请日：1980-11-14
申请人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
发明人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
IPC分类号： H01L27/146 , H01L31/0264 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14665
摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.
摘要翻译：在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层，光电转换层。通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。暗电流被抑制，光响应良好。作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

8. 发明授权

US4982095A Multi-element type radiation detector 失效
标题翻译：多元素型辐射探测器
公开(公告)号：US4982095A
公开(公告)日：1991-01-01
申请号：US239387
申请日：1988-09-01
申请人： Tetsuhiko Takahashi , Hirosh Takeuch , Toshikazu Shimada , Haruo Itoh , Tadaaki Hirai , Kenji Maio , Kenichi Okajima , Minoru Yoshida , Hideaki Yamamoto
发明人： Tetsuhiko Takahashi , Hirosh Takeuch , Toshikazu Shimada , Haruo Itoh , Tadaaki Hirai , Kenji Maio , Kenichi Okajima , Minoru Yoshida , Hideaki Yamamoto
IPC分类号： G01T1/20 , G01T1/24 , H01L31/0232 , H01L31/0376 , H01L31/109 , H01L31/115
CPC分类号： G01T1/2018 , H01L31/02322 , H01L31/03762 , H01L31/109 , H01L31/115 , Y02E10/548
摘要： This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon layer for converting the emission of each scintillator is formed on the surface of each scintillator block by thin film technique.
摘要翻译：本发明涉及一种用于X射线CT扫描仪系统的多元件型辐射检测器，其中以光学或辐射方式彼此隔离的多个闪烁器块整体地排列，并且由非晶体组成的光电二极管通过薄膜技术在每个闪烁体块的表面上形成用于转换每个闪烁体的发射的硅层。

9. 发明授权

US3941672A Method of manufacturing light sensitive heterodiode 失效
标题翻译：制造光敏异源二极管的方法
公开(公告)号：US3941672A
公开(公告)日：1976-03-02
申请号：US450186
申请日：1974-03-11
申请人： Yasuo Tanaka , Hideaki Yamamoto , Keiko Ooki , Naohiro Goto , Toru Takigawa
发明人： Yasuo Tanaka , Hideaki Yamamoto , Keiko Ooki , Naohiro Goto , Toru Takigawa
IPC分类号： H01J9/233 , H01J9/20 , H01J29/45 , H01L21/00 , H01L31/00 , H01L31/0264 , C23C15/00
CPC分类号： H01L21/00 , H01J29/456 , H01J9/20 , H01J9/233 , H01L31/00
摘要： A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.
摘要翻译：一种制造光敏异质二极管的方法，其包括设置在其上的n型透明导电层和p型光电导层，并与其形成整流接触，其中在n型透明导电层上提供p型光电导层之前后者的表面通过机械抛光或通过放电加速的离子轰击来平滑。

10. 发明授权

US4199777A Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4199777A
公开(公告)日：1980-04-22
申请号：US764845
申请日：1977-02-02
申请人： Eiichi Maruyama , Hideaki Yamamoto
发明人： Eiichi Maruyama , Hideaki Yamamoto
IPC分类号： H01L27/15 , H01L23/14 , H01L23/538 , H01L25/16 , H01L27/146 , H01L29/267 , H01L31/00 , H01L29/06
CPC分类号： H01L27/14665 , H01L23/147 , H01L23/538 , H01L24/18 , H01L24/24 , H01L25/16 , H01L29/267 , H01L31/00 , H01L33/00 , H01L2224/24147 , H01L2224/32145 , H01L2224/73267 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/15173 , H01L2924/15787
摘要： A semiconductor device includes at least two different elements having different functions. At least one of the elements is fixed within a recess provided in a substrate, and wirings are provided on an insulating film deposited commonly on the elements and the substrate, so that there is no step or clearance between the elements or between the element and the substrate, making it possible to easily form good interconnections.
摘要翻译：半导体器件包括具有不同功能的至少两个不同元件。至少一个元件被固定在设置在基板中的凹槽内，并且布线设置在通常在元件和基板上沉积的绝缘膜上，使得元件之间或元件之间不存在台阶或间隙衬底，使得可以容易地形成良好的互连。

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