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1. 发明授权

US4307319A Semiconductor layer of oxygen depletion type cerium oxide or lead oxide 失效
标题翻译：半导体层的氧耗尽型氧化铈或氧化铅
公开(公告)号：US4307319A
公开(公告)日：1981-12-22
申请号：US921948
申请日：1978-07-05
申请人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
发明人： Motoyasu Terao , Tadaaki Hirai , Eiichi Maruyama , Hideaki Yamamoto , Tsutomu Fujita , Naohiro Goto , Keiichi Shidara
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/451
摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.
摘要翻译：光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

2. 发明授权

US4040985A Photoconductive films 失效
标题翻译：光导膜
公开(公告)号：US4040985A
公开(公告)日：1977-08-09
申请号：US674086
申请日：1976-04-06
申请人： Keiichi Shidara , Naohiro Goto , Eiichi Maruyama , Tadaaki Hirai , Tsutomu Fujita
发明人： Keiichi Shidara , Naohiro Goto , Eiichi Maruyama , Tadaaki Hirai , Tsutomu Fujita
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/00
CPC分类号： H01J29/456 , Y10T428/31678
摘要： A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.
摘要翻译：光电导膜包括含有Se的第一区域，其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子％的平均值，第二区域设置在第一区域上并包含Se，其中加入具有峰值大于15原子％的浓度的连续分布的浓度，第三区域设置在第二区域上，并且包含Se，其中能够形成Se中的深层次的元素具有连续的浓度分布具有大于15原子％的峰值的第一区域，以及设置在第三区域上并且含有Se的Se的第四区域，其中Te和Se中能够形成深度水平的元素分别以低于10原子％。

3. 发明授权

US3984722A Photoconductive target of an image pickup tube and method for manufacturing the same 失效
标题翻译：摄像管的感光体及其制造方法
公开(公告)号：US3984722A
公开(公告)日：1976-10-05
申请号：US469760
申请日：1974-05-14
申请人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
发明人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
IPC分类号： H01J29/45 , H01L31/08 , H01L31/109 , H01J31/38
CPC分类号： H01L31/109 , H01J29/456 , H01J9/233
摘要： An image pickup tube target wherein a rectifying contact which is formed at a boundary of a first layer of a material selected from the group consisting of tin oxide, indium oxide, titanium oxide, cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, n-type germanium, n-type silicon and mixture thereof, and a second layer of a material mainly consisting of selenium and including halogen, is reversely biased and operated at a region where signal current is saturated with respect to applied voltage. The second layer of the material includes 50 atomic percent or more of selenium and 0.1 - 1000 atomic ppm of halogen. More preferably, the second layer comprises 3-20 atomic % of arsenic, 0.1-20 atomic ppm of iodine and balance mainly consisting of selenium.
摘要翻译：一种图像拾取管目标，其中形成在选自氧化锡，氧化铟，氧化钛，硫化镉，硫化锌，硒化镉，硒化锌，氮化镍的材料的第一层的边界处的整流接触型锗，n型硅及其混合物，以及主要由硒组成并包括卤素的材料的第二层反向偏置并在信号电流相对于施加电压饱和的区域操作。材料的第二层包括50原子％或更多的硒和0.1-1000原子ppm的卤素。更优选地，第二层包含3-20原子％的砷，0.1-20原子ppm的碘，余量主要由硒组成。

4. 发明授权

US4227078A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译：一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和向基板的第二表面开放的光纤束用作信息读取面。

5. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

6. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

7. 发明授权

US4233506A Photo-sensor 失效
标题翻译：光传感器
公开(公告)号：US4233506A
公开(公告)日：1980-11-11
申请号：US903161
申请日：1978-05-05
申请人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Makoto Matsui , Toshihisa Tsukada , Yoshizumi Eto , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： G02B6/42 , G02B27/00 , G02B27/02 , G06K9/20 , H01L27/144 , H04N1/028 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.
摘要翻译：一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

8. 发明授权

US4121537A Apparatus for vacuum deposition 失效
标题翻译：真空沉积设备
公开(公告)号：US4121537A
公开(公告)日：1978-10-24
申请号：US779795
申请日：1977-03-21
申请人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
发明人： Eiichi Maruyama , Tadaaki Hirai , Sachio Ishioka , Hideaki Yamamoto , Kiyohisa Inao
IPC分类号： C23C14/54 , B05C11/00 , C23C13/08
CPC分类号： C23C14/546
摘要： An apparatus for vacuum deposition comprising a turn-table for holding substrates for deposition, and a plurality of evaporation boats arranged in opposition to a circumferential part of the turn-table, the turn-table being rotated at deposition whereby vapors from the respective boats can be cyclically accumulated and stuck onto the substrates, further comprises at least one film-thickness monitor which is fixed to the turn-table and which detects the quantity of a deposited substance of one layer stuck every time the substrates pass over each boat, and means to receive a signal from the film-thickness monitor and divide the signal time sequentially, thereby detecting at least one of the deposition rate and the total amount of the vapor from each boat, and to control the quantity of the vapor arriving to the substrates for deposition from each boat while comparing the detected value with a predetermined value.
摘要翻译：一种用于真空沉积的装置，包括用于保持用于沉积的基板的转台以及与转台的圆周部分相对布置的多个蒸发舟，所述转台在沉积下旋转，从而来自各个船的蒸气可以进一步包括至少一个薄膜厚度监测器，该膜厚监测器固定在转台上，每隔一个基板通过每个船只就检测一层沉积物质的量;以及装置接收来自薄膜厚度监视器的信号并依次划分信号时间，从而检测来自每个船的蒸气的沉积速率和总量中的至少一个，并且控制到达基板的蒸气的量在将检测值与预定值进行比较时，从每个船的沉积。

9. 发明授权

US4331506A Method of manufacturing target of image pickup tube 失效
标题翻译：摄像管目标的制造方法
公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J9/233 , H01J31/46 , H01J31/26
CPC分类号： H01J31/46 , H01J9/233
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译：一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。本发明提供了一种很好的批量生产方法。

10. 发明授权

US4249106A Radiation sensitive screen 失效
标题翻译：辐射敏感屏
公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H01J9/233 , H01J29/39 , H01J29/45
CPC分类号： H01J29/39 , H01J29/45 , H01J9/233
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译：一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的

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