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    • 3. 发明授权
    • Method and apparatus for quenching
    • 淬火方法和装置
    • US4509995A
    • 1985-04-09
    • US459148
    • 1983-01-19
    • Takeshi HachisuKeiji TaguchiToshimi SasakiTetsuo MatsumotoNobuyoshi Hidao
    • Takeshi HachisuKeiji TaguchiToshimi SasakiTetsuo MatsumotoNobuyoshi Hidao
    • C21D1/18C21D1/667F28C3/00F28F27/00
    • F28C3/005C21D1/667F28F27/00
    • A quenching method wherein an object to be quenched is sprayed with a mixed spray jet of a liquid and a gas. The diameter of droplets in the mixed spray jet is from 50 to 200 .mu.m, and the mixing ratio between the liquid and the gas is varied during the period from the start to the end of cooling. Also disclosed is a quenching apparatus having nozzles for spraying an object to be quenched with a mixed spray jet of a liquid and a gas, a liquid supply source for supplying a pressurized liquid, and a gas supply source for supplying a pressurized gas. Each of the nozzles has a liquid-jetting port formed in the surface opened to the atmosphere and a gas-jetting port annularly formed around the liquid-jetting port on the same plane. The liquid-jetting port is communicated with the liquid supply source, while the gas-jetting port is communicated with the gas supply source. A flow rate regulating valve for regulating the flow rate of the pressurized liquid is disposed between the liquid-jetting port and the liquid supply source, while a flow rate regulating valve for regulating the flow rate of the pressurized gas is disposed between the gas-jetting port and the gas supply source.
    • 一种淬火方法,其中用液体和气体的混合喷射喷射被淬火物体。 混合喷射射流中液滴的直径为50〜200μm,液体与气体的混合比例在冷却开始至结束的期间内变化。 还公开了一种淬火装置,其具有用于喷射液体和气体的混合喷射喷射待淬火物体的喷嘴,用于供应加压液体的液体供应源和用于供应加压气体的气体供应源。 每个喷嘴具有形成在与大气开放的表面中的液体喷射口和在同一平面上的喷液口周围环形地形成的气体喷射口。 喷液口与液体供给源连通,气体喷射口与气体供给源连通。 用于调节加压液体的流量的流量调节阀设置在喷液口和液体供给源之间,而用于调节加压气体的流量的流量调节阀设置在气体喷射口 港口和供气源。
    • 5. 发明授权
    • Cleaning apparatus
    • 清洁装置
    • US06253775B1
    • 2001-07-03
    • US09323968
    • 1999-06-02
    • Shigenori KitaharaKeiji TaguchiHiroko Tsuboi
    • Shigenori KitaharaKeiji TaguchiHiroko Tsuboi
    • B08B310
    • H01L21/67057B08B3/10Y10S134/902
    • A cleaning apparatus has a processing tank (21) for containing a processing liquid in which semiconductor wafers (W) are immersed, and a tubular vessel(22a) having a processing chamber (23) containing the processing tank (21). A side wall (26) of the vessel (22a), and a first partition wall (28) having an upright wall (27) standing on a bottom plate (23a) defining the bottom of the processing chamber (23) form a side ventilating duct (24). The bottom wall (30) of the vessel (22a), and a second partition wall (29) substantially horizontally extending from the lower end of the first partition wall (28) form a bottom ventilating duct (25). The side ventilating duct (24) and the bottom ventilating duct (25) can compactly arrange devices and pipes for supplying and discharging the cleaning liquid for cleaning semiconductor wafers (W), easily maintain the devices and pipes, easily arrange a ventilating system to the cleaning apparatus, and improve ventilation efficiency.
    • 清洁装置具有用于容纳浸渍有半导体晶片(W)的处理液的处理槽(21)和具有包含处理槽(21)的处理室(23)的管状容器(22a)。 容器(22a)的侧壁(26)和具有竖立壁(27)的第一分隔壁(28),其竖立在限定处理室(23)的底部的底板(23a)上,形成侧面通风 导管(24)。 容器(22a)的底壁(30)和从第一分隔壁(28)的下端基本上水平延伸的第二分隔壁(29)形成底部通风管道(25)。 侧面通风管道(24)和底部通风管道(25)可以紧凑地排列用于提供和排出用于清洁半导体晶片(W)的清洁液体的设备和管道,容易地维护设备和管道,容易地将通风系统布置在 清洁装置,提高通风效率。