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1. 发明申请

US20100279226A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20100279226A1
公开(公告)日：2010-11-04
申请号：US12810793
申请日：2008-12-22
申请人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
发明人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： H01L21/0275 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
摘要翻译：本发明的目的是提供一种制造抗蚀剂图案的方法，其中可以形成极细和高精度的抗蚀剂图案，该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的，双重图案化方法抗蚀剂处理方法包括：通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含树脂（A），光酸产生剂（B）和交联剂（C），树脂（A）具有酸不稳定基团，在碱性水溶液中不溶或难溶，但通过酸的作用使其溶于碱水溶液中; 预烘烤曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。

2. 发明授权

US08062829B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography 有权
标题翻译：用于浸没光刻的化学放大抗蚀剂组合物和化学放大抗蚀剂组合物
公开(公告)号：US08062829B2
公开(公告)日：2011-11-22
申请号：US12395963
申请日：2009-03-02
申请人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/111 , Y10S430/122
摘要： A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.
摘要翻译：一种化学放大抗蚀剂组合物，其包含：树脂，其包含在侧链中具有酸不稳定基团的结构单元，由式（I）表示的结构单元和具有多环内酯结构的结构单元，并且其是可溶的在有机溶剂中，不溶于或难溶于碱水溶液，但通过酸的作用可溶于碱水溶液; 和由式（II）表示的酸发生剂。其中X 1表示氢原子，C 1〜C 4烷基等，Y各自独立地表示氢原子或烷基，n表示1〜14的整数，R 1〜R 4分别表示氢原子，烷基等，A +表示有机抗衡离子，E表示CF 3 SO 3 - ，C 2 F 5 SO 3 - ，C 4 F 9 SO 3 - 等，Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。

3. 发明授权

US08546059B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US08546059B2
公开(公告)日：2013-10-01
申请号：US12953606
申请日：2010-11-24
申请人： Koji Ichikawa , Takayuki Miyagawa , Mitsuhiro Hata
发明人： Koji Ichikawa , Takayuki Miyagawa , Mitsuhiro Hata
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and Rc6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（C1）表示的化合物：其中Rc1表示可以具有一个或多个取代基的芳基，Rc2和Rc3各自独立地表示氢原子，可具有一个或多个取代基的脂族烃基或可具有一个或多个取代基的芳族基团，R c4和R c6各自独立地表示氢原子或可具有一个或多个取代基的脂族烃基，或Rc4和Rc6键合彼此形成烷二基，Rc5表示可具有一个或多个取代基的脂族烃基或可具有一个或两个取代基的氨基，R c7表示氢原子或可具有一个或多个取代基的脂族烃基，或Rc5和Rc7彼此键合形成烷二基。

4. 发明申请

US20110171586A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110171586A1
公开(公告)日：2011-07-14
申请号：US13003178
申请日：2009-07-07
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2022 , G03F7/38 , G03F7/40
摘要： A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
摘要翻译：一种抗蚀剂处理方法，具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现通过酸，光酸产生剂（B）和交联剂（C）的作用将其溶解在碱性水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀剂膜的整个表面，然后通过掩模曝光第一抗蚀剂膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）通过掩模使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

5. 发明申请

US20090317744A1 POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME 有权
标题翻译：聚合物和化学稳定化合物包括它们
公开(公告)号：US20090317744A1
公开(公告)日：2009-12-24
申请号：US12467683
申请日：2009-05-18
申请人： Yusuke FUJI , Mitsuhiro Hata
发明人： Yusuke FUJI , Mitsuhiro Hata
IPC分类号： G03F7/004 , C08G63/00
CPC分类号： C08F220/28 , C08F220/18 , Y10S430/114
摘要： A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n′ represents an integer of 0 to 12, Z2 represents a single bond etc., k′ represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc., and R23 represents a C1-C30 monovalent hydrocarbon group, and at least one structural unit selected from the group consisting of structural units represented by the formulae (IIIa), (IIIb), (IIIc), (IIId) and (IIIf) wherein R10 represents a hydrogen atom etc., R11 represents a methyl group, R12 is independently in each occurrence a carboxyl group etc., j represents an integer of 0 to 3, a represents an integer of 0 to 5, b represents an integer of 0 to 3, c represents an integer of 0 to (2j+2), Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.
摘要翻译：一种包含由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1表示氢原子等，R2表示直链，支链或环状的C1-C8烷基，R3表示甲基，n表示 0〜14的整数，Z1表示单键等，k表示1〜4的整数，R4和R5各自独立地表示氢原子等，m表示1〜3的整数，表示的结构单元式（II）表示：其中R6和R7各自独立地表示氢原子等，R8表示甲基，R9表示氢原子等，n'表示0〜12的整数，Z2表示单键等 k表示1〜4的整数，R 21和R 22各自独立地表示氢原子等，R 23表示碳原子数为1〜30的一价烃基，以及至少一个选自以下结构单元的结构单元：通式（IIIa），（IIIb），（IIIc），（IIId）和（IIIf））其中R 10表示氢原子等，R 11表示甲基，R 12各自独立地表示羧基等，j表示0〜3的整数，a表示0〜5的整数，b表示整数 0〜3的整数，c表示0〜（2j + 2）的整数，Z 3表示单键等，k表示1〜4的整数。

6. 发明授权

US08048612B2 Polymer and chemically amplified resist composition comprising the same 有权
标题翻译：包含其的聚合物和化学增幅抗蚀剂组合物
公开(公告)号：US08048612B2
公开(公告)日：2011-11-01
申请号：US12467683
申请日：2009-05-18
申请人： Yusuke Fuji , Mitsuhiro Hata
发明人： Yusuke Fuji , Mitsuhiro Hata
IPC分类号： G03F7/00 , G03F7/004 , C08F10/00
CPC分类号： C08F220/28 , C08F220/18 , Y10S430/114
摘要： A polymer comprising a structural unit represented by the formula (Ia) or (Ib): wherein R1 represents a hydrogen atom etc., R2 represents a linear, branched chain or cyclic C1-C8 alkyl group, R3 represents a methyl group, n represents an integer of 0 to 14, Z1 represents a single bond etc., k represents an integer of 1 to 4, R4 and R5 each independently represents a hydrogen atom etc., and m represents an integer of 1 to 3, a structural unit represented by the formula (II): wherein R6 and R7 each independently represents a hydrogen atom etc., R8 represents a methyl group, R9 represents a hydrogen atom etc., n′ represents an integer of 0 to 12, Z2 represents a single bond etc., k′ represents an integer of 1 to 4, R21 and R22 each independently represents a hydrogen atom etc., and R23 represents a C1-C30 monovalent hydrocarbon group, and at least one structural unit selected from the group consisting of structural units represented by the formulae (IIIa), (IIIb), (IIIc), (IIId) and (IIIf) wherein R10 represents a hydrogen atom etc., R11 represents a methyl group, R12 is independently in each occurrence a carboxyl group etc., j represents an integer of 0 to 3, a represents an integer of 0 to 5, b represents an integer of 0 to 3, c represents an integer of 0 to (2j+2), Z3 represents a single bond etc., and k″ represents an integer of 1 to 4.
摘要翻译：一种包含由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1表示氢原子等，R2表示直链，支链或环状的C1-C8烷基，R3表示甲基，n表示 0〜14的整数，Z1表示单键等，k表示1〜4的整数，R4和R5各自独立地表示氢原子等，m表示1〜3的整数，表示的结构单元式（II）表示：其中R6和R7各自独立地表示氢原子等，R8表示甲基，R9表示氢原子等，n'表示0〜12的整数，Z2表示单键等 k表示1〜4的整数，R 21和R 22各自独立地表示氢原子等，R 23表示碳原子数为1〜30的一价烃基，以及至少一个选自以下结构单元的结构单元：通过式（IIIa），（IIIb），（IIIc），（IIId）和（ IIIf）其中R10表示氢原子等，R11表示甲基，R12各自独立地表示羧基等，j表示0〜3的整数，a表示0〜5的整数，b表示 0〜3的整数，c表示0〜（2j + 2）的整数，Z 3表示单键等，k表示1〜4的整数。

7. 发明申请

US20100273112A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
标题翻译：生产光电子图案的工艺
公开(公告)号：US20100273112A1
公开(公告)日：2010-10-28
申请号：US12763357
申请日：2010-04-20
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/091
摘要： The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D): (A) a step of forming the first photoresist film on a substrate using the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, an acid generator, and a cross-linking agent, exposing the first photoresist film to radiation followed by developing the exposed first photoresist film to obtain the first photoresist pattern, (B) a step of baking the obtained first photoresist pattern at 190 to 250° C. for 10 to 60 seconds, (C) a step of forming the second photoresist film on the substrate on which the first photoresist pattern has been formed using the second photoresist composition, exposing the second photoresist film to radiation, and (D) a step of developing the exposed second photoresist film to obtain the second photoresist pattern.
摘要翻译：本发明提供一种制造光致抗蚀剂图案的方法，包括以下步骤（A）至（D）：（A）使用包含树脂的第一光致抗蚀剂组合物在基板上形成第一光致抗蚀剂膜的步骤，所述树脂包括具有其侧链酸性不稳定基团本身不溶于或难溶于碱水溶液，但通过酸，酸发生剂和交联剂的作用变得可溶于碱性水溶液中，使第一将曝光的第一光致抗蚀剂膜显影以获得第一光致抗蚀剂图案，（B）在190至250℃下烘烤获得的第一光致抗蚀剂图案10至60秒的步骤，（C）步骤在所述基板上形成所述第二光致抗蚀剂膜，使用所述第二光致抗蚀剂组合物在其上形成所述第一光致抗蚀剂图案，将所述第二光致抗蚀剂膜暴露于辐射，以及（D）旋转曝光的第二光致抗蚀剂膜以获得第二光致抗蚀剂图案。

8. 发明授权

US07981985B2 Polymer and chemically amplified resist composition comprising the same 有权
标题翻译：包含其的聚合物和化学增幅抗蚀剂组合物
公开(公告)号：US07981985B2
公开(公告)日：2011-07-19
申请号：US12426038
申请日：2009-04-17
申请人： Yusuke Fuji , Mitsuhiro Hata
发明人： Yusuke Fuji , Mitsuhiro Hata
IPC分类号： C08F224/00 , G03F7/004 , C08F4/04
CPC分类号： C08F220/10 , C08F220/18 , C08F220/28 , C08F220/32
摘要： The present invention provides a polymer containing a structural unit represented by the formula (Ia) or (Ib): wherein R1, R2, R3, n, Z1, R4, R5 and m are defined in the specification, a structural unit represented by the formula (II): wherein R6, R7, R8, R9, Z2, n′ and Z′ are defined in the specification, and a structural unit represented by the formula (III): wherein R10, R11, 1′ and Z3 are defined in the specification.
摘要翻译：本发明提供含有由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1，R2，R3，n，Z1，R4，R5和m在说明书中定义，由式（II）：其中R 6，R 7，R 8，R 9，Z 2，n'和Z'在本说明书中定义，和由式（III）表示的结构单元：其中R10，R11,1'和Z3被定义在规范中。

9. 发明申请

US20080305638A1 Coating compositions for use in forming patterns and methods of forming patterns 审中-公开
标题翻译：用于形成图案的涂料组合物和形成图案的方法
公开(公告)号：US20080305638A1
公开(公告)日：2008-12-11
申请号：US12222433
申请日：2008-08-08
申请人： Sang-jung Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
发明人： Sang-jung Choi , Mitsuhiro Hata , Man-hyoung Ryoo , Jung-hwan Hah
IPC分类号： H01L21/311
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A coating composition for forming etch mask patterns may include a polymer and an organic solvent. The polymer may have an aromatic ring substituted by a vinyl ether functional group. The polymer may be, for example, a Novolak resin partially substituted by a vinyl ether functional group or poly(hydroxystyrene) partially substituted by a vinyl ether functional group.
摘要翻译：用于形成蚀刻掩模图案的涂料组合物可以包括聚合物和有机溶剂。聚合物可以具有被乙烯基醚官能团取代的芳环。聚合物可以是例如部分被乙烯基醚官能团取代的酚醛清漆树脂或部分被乙烯基醚官能团取代的聚（羟基苯乙烯）。

10. 发明申请

US20070048672A1 Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same 失效
标题翻译：包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US20070048672A1
公开(公告)日：2007-03-01
申请号：US11447932
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
发明人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/0758 , G03F7/2041
摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
摘要翻译：提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系，基于烷烃的有机溶剂及其混合物。

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