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1. 发明授权

US08124985B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08124985B2
公开(公告)日：2012-02-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

2. 发明申请

US20100019257A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100019257A1
公开(公告)日：2010-01-28
申请号：US11815759
申请日：2006-02-07
申请人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Mitsuhiko Sakai , Atsushi Yamaguchi , Ken Nakahara , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/60
摘要： There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etching, and the n-type layer (3) expose around the column portions (6a).
摘要翻译：提供了具有通过有效地取出在半导体层叠部分和衬底内易于重复全反射的光而衰减的能够提高外部量子效率的结构的氮化物半导体发光器件及其制造方法。在由例如蓝宝石等制成的基板（1）的表面上设置包括由氮化物半导体构成的第一导电型层和第二导电型层的半导体层叠部（6）。第一电极（例如，p侧电极（8））在半导体层叠部分（6）的表面侧电连接到第一导电类型层（例如，p型层（5）），并且第二电极（例如，n侧电极（9））被设置为电连接到第二导电类型层（例如，n型层（3））。通过蚀刻在半导体层叠部（6）的芯片的周围区域去除半导体层叠部（6）的一部分，使得柱部（6a）不经蚀刻而离开半导体层叠部而并排放置，并且 n型层（3）围绕柱部（6a）露出。

3. 发明授权

US06197609B1 Method for manufacturing semiconductor light emitting device 失效
标题翻译：半导体发光元件的制造方法
公开(公告)号：US06197609B1
公开(公告)日：2001-03-06
申请号：US09391625
申请日：1999-09-07
申请人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
发明人： Tsuyoshi Tsutsui , Masayuki Sonobe , Norikazu Ito
IPC分类号： H01L2100
CPC分类号： H01L33/0095
摘要： Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrode are then respectively formed on the p-type layer on the surface of the laminated semiconductor layers and the exposed n-type layer, respectively in an electrically connected manner, followed by dicing of the substrate from the exposed n-type layer to the substrate at portions at which breaking of the substrate is performed. Then a protection film is provided on the entire surface of the laminated semiconductor layers as to expose the p-side and n-side electrodes, and breaking of the substrate is performed at dicing portions into individual chips. Consequently, semiconductor light emitting devices can be obtained by breaking the wafer into individual chips without etching the protection film and without damaging the protection film at the time of breaking. Also, the light emitting devices can be improved.
摘要翻译：形成发光层并且包括n型层和p型层的半导体层形成在衬底上，然后通过去除一部分层叠半导体层而露出n型层。 p侧电极和n侧电极分别以电连接的方式分别形成在层叠半导体层的表面上的p型层和暴露的n型层上，接着从基板在进行基板断裂的部分，将裸露的n型层涂覆在基板上。然后在层叠半导体层的整个表面上设置保护膜，以露出p侧和n侧电极，并且在切割部分将基板的断裂进行到单独的芯片。因此，半导体发光器件可以通过将晶片分解为单独的芯片而不蚀刻保护膜并且在破坏时不损坏保护膜来获得。而且，可以改善发光器件。

4. 发明授权

US06194241B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译：半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。

5. 发明授权

US06191437B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06191437B1
公开(公告)日：2001-02-20
申请号：US09381285
申请日：1999-09-21
申请人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007
摘要： An n-type layer (3) and a p-type layer (5) which are made of a gallium nitride based compound semiconductor are provided on a substrate (1) so that a light emitting layer forming portion (10) for forming a light emitting layer is provided. A gallium nitride based compound semiconductor layer containing oxygen is used for at least one layer of the light emitting layer forming portion (10). In the case where a buffer layer (2) made of the gallium nitride based compound semiconductor or aluminum nitride is provided between the substrate (1) and the light emitting layer forming portion (10), the buffer layer (2) and/or at least one layer of the light emitting layer forming portion (10) may contain oxygen. By such a structure, crystal defects of the semiconductor layer of the light emitting layer forming portion (10) can be decreased and a luminance can highly be enhanced. Thus, it is possible to obtain a blue color type semiconductor light emitting device having a high luminance.
摘要翻译：在基板（1）上设置由氮化镓类化合物半导体构成的n型层（3）和p型层（5），使得形成光的发光层形成部（10）提供发光层。含有氧的氮化镓系化合物半导体层用于至少一层发光层形成部（10）。在基板（1）和发光层形成部分（10）之间设置由氮化镓基化合物半导体或氮化铝制成的缓冲层（2）的情况下，缓冲层（2）和/或在发光层形成部（10）的至少一层可以含有氧。通过这样的结构，可以减少发光层形成部分（10）的半导体层的晶体缺陷，并且可以高度提高亮度。因此，可以获得具有高亮度的蓝色型半导体发光器件。

6. 发明授权

US6107644A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
申请人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , H01L33/38 , H01L27/15
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/32
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译：半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。提供与暴露的第二导电类型电连接的第二电极。第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。

7. 发明授权

US06258619B1 Fabrication of semiconductor light emitting device 失效
标题翻译：半导体发光器件的制造
公开(公告)号：US06258619B1
公开(公告)日：2001-07-10
申请号：US09337396
申请日：1999-06-22
申请人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0
摘要翻译：半导体发光器件包括衬底，由形成在衬底上的氮化镓基化合物半导体形成的n型层和形成在衬底上的由氮化镓基化合物半导体形成的p型层。半导体覆盖层由衬底上的n型层和p型层构成。在半导体覆盖层中与n型和p型层一起形成发光层以发光。 n型层和p型层中的至少一层由包括AlyGa1-yN（0

8. 发明授权

US6156584A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6156584A
公开(公告)日：2000-12-05
申请号：US48110
申请日：1998-03-26
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21/301 , H01L27/12 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/323 , H01L21/302
CPC分类号： H01S5/0201 , H01L33/0095 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
摘要翻译：沉积在用于形成多个发光器件芯片的晶片状衬底上的是具有与衬底不同的性质的半导体层层压体。然后，电极设置在第一导电类型的半导体层层叠体的顶部半导体层上并与之连接，并与第二导电类型的半导体层电连接，通过局部蚀刻半导体层层叠体，与个别芯片相关联。然后，在芯片之间的边界部分处蚀刻半导体层层叠体，使基板露出，使基板在露出部分断裂成芯片。由于半导体层层叠体在断裂晶片之前在芯片之间的边界部分被蚀刻掉，所以可以在不破坏半导体层叠层的发光部分的情况下进行破坏。这有助于提供高性能半导体发光器件。

9. 发明授权

US6054716A Semiconductor light emitting device having a protecting device 失效
标题翻译：具有保护装置的半导体发光器件
公开(公告)号：US6054716A
公开(公告)日：2000-04-25
申请号：US3145
申请日：1998-01-06
申请人： Masayuki Sonobe , Tsuyoshi Tsutsui , Shunji Nakata , Norikazu Itoh , Shinji Isokawa , Hidekazu Toda
发明人： Masayuki Sonobe , Tsuyoshi Tsutsui , Shunji Nakata , Norikazu Itoh , Shinji Isokawa , Hidekazu Toda
IPC分类号： H01L25/16 , H01L33/62 , H05B33/08 , H01L27/15
CPC分类号： H05B33/0821 , H01L25/167 , H05B33/089 , H01L2224/0401 , H01L2224/05555 , H01L2224/0603 , H01L2224/16145 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/01079 , H01L2924/12041 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L33/62 , Y02B20/341
摘要： A semiconductor light emitting device incorporates therein with (a) a light emitting portion formed by semiconductor overlying layers including a first conductivity layer and a second conductivity layer in order to a light emitting layer, and (b) a protecting element portion provided in electrical connection between said first conductivity type layer and said second conductivity type layer so that said light emitting portion is protected against at least a reverse voltage applied to said light emitting portion. The light emitting portion and the protecting element portion can be formed by separate chips or in one chip having the both. They are formed into a lamp-type or chip-type light emitting device. The incorporation of the protecting element increase the reverse-voltage resistance for a compound semiconductor, such as galium-itride or the like, that is less resistive to reverse voltages applied. If a zener diode is employed as a protecting element, the protection is also available against high forward voltages. Therefore, it is possible to prevent against damages due to static electricity even during mafacture stages.
摘要翻译：一种半导体发光器件，其中包含（a）由半导体覆盖层形成的发光部分，该发光部分包括第一导电层和第二导电层，以便发光层，以及（b）以电连接形式设置的保护元件部分在所述第一导电类型层和所述第二导电类型层之间，使得所述发光部分至少受到施加到所述发光部分的反向电压的保护。发光部分和保护元件部分可以由单独的芯片或具有这两者的一个芯片形成。它们形成为灯型或芯片型发光器件。保护元件的结合增加了对施加的反向电压较不敏感的化合物半导体（例如galium-itride等）的反向电压电阻。如果使用齐纳二极管作为保护元件，则保护也可用于高正向电压。因此，即使在制膜阶段，也可以防止由静电导致的损坏。

10. 发明授权

US06168962A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06168962A
公开(公告)日：2001-01-02
申请号：US09012193
申请日：1998-01-23
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21302
CPC分类号： H01L33/0095
摘要： Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type layers. Part of the semiconductor overlying layers including the first conductivity type layer on a surface thereof is removed so as to expose part of the second conductivity type layer. Electrodes are formed, for each chip, respectively in connection with the surface of the first conductivity type layer and the surface of the exposed second conductivity type layer. The wafer is divided into individual chips. The exposed areas of the second conductivity type semiconductor layer is provided only part of a peripheral area of the chip so that the first conductivity type semiconductor layer is directly separated during dividing the wafer into individual chips. With such a method, when dividing a wafer into chips, the inefficiency of the space (etched areas do not contribute to light emission) is eliminated in etch-removing the semiconductor overlying layers at areas to be divided, thereby improving chip yield and hence reducing cost.
摘要翻译：公开了半导体发光器件的制造方法。在晶片的状态下在基板上形成半导体覆盖层，以便在其中提供发光区域。半导体覆盖层包括第一和第二导电类型层。除去包括其表面上的第一导电类型的半导体覆盖层的一部分，以暴露部分第二导电类型层。对于每个芯片，分别与第一导电类型层的表面和暴露的第二导电类型层的表面分别形成电极。晶片分为单个芯片。第二导电类型半导体层的暴露区域仅提供芯片的周边区域的一部分，使得在将晶片分成单个芯片期间，第一导电类型半导体层被直接分离。通过这样的方法，当将晶片分成芯片时，在要分割的区域上的半导体覆盖层的蚀刻去除中消除了空间（蚀刻区域对光发射没有贡献）的低效率，从而提高了芯片产量并因此降低了成本。

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