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1. 发明授权

US08934513B2 Semiconductor light emitting device and manufacturing method therefor 有权
公开(公告)号：US08934513B2
公开(公告)日：2015-01-13
申请号：US13010154
申请日：2011-01-20
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01S5/00 , H01S5/323 , H01L33/00 , H01L33/32 , H01S5/223 , H01S5/32 , H01L33/12 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/22
CPC分类号： H01S5/32341 , H01L33/007 , H01L33/12 , H01L33/32 , H01S5/0213 , H01S5/0421 , H01S5/0422 , H01S5/2004 , H01S5/2009 , H01S5/22 , H01S5/2231 , H01S5/32 , H01S5/3211 , H01S5/3213 , H01S2301/173 , H01S2304/04
摘要： A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

2. 发明授权

US08411718B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08411718B2
公开(公告)日：2013-04-02
申请号：US12809233
申请日：2008-12-19
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01S5/323 , H01S5/22
CPC分类号： H01S5/32341 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2214 , H01S5/3214
摘要： The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN layer 3, an active layer 4, a p-type AlGan layer 5 and a p-type GaN layer 6 are laminated sequentially. On the p-type GaN layer 6, an insulating film 7 and a transparent electrode 8 are formed. A portion of the transparent electrode 8 is formed in contact with the p-type GaN layer 6. A ridge stripe portion D to form a waveguide is configured of a transparent film 9. A region, where the transparent electrode 8 and the p-type GaN layer 6 are in contact with each other, serves as a stripe-shaped current injection region.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其能够防止由于器件的驱动电压的增加和内部发热引起的器件寿命缩短，并且即使器件具有脊状条纹结构也能提供均匀的激光特性。在GaN衬底1上依次层叠n型GaN层2，n型AlGaN层3，有源层4，p型AlGan层5和p型GaN层6。在p型GaN层6上形成绝缘膜7和透明电极8。透明电极8的一部分形成为与p型GaN层6接触。形成波导的脊条部分D由透明膜9构成。透明电极8和p型 GaN层6彼此接触，用作条形电流注入区域。

3. 发明授权

US08101963B2 Semiconductor light emitting element and method for manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08101963B2
公开(公告)日：2012-01-24
申请号：US12307193
申请日：2007-07-03
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00 , H01L31/0224
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L25/0753 , H01L33/32 , H01L33/40 , H01L33/44 , H01L2224/24051 , H01L2224/24137 , H01L2224/24226 , H01L2224/24998 , H01L2224/32225 , H01L2224/73267 , H01L2224/82007 , H01L2224/92244 , H01L2924/01012 , H01L2924/01078 , H01L2924/01079
摘要： A semiconductor light emitter (A) includes an n-type semiconductor layer (2), a p-type semiconductor layer (4), and an active layer (3) between these two layers (2, 4). The light emitter (A) further includes an n-side electrode (5) on the n-type layer (2) and a p-side electrode (6) on the p-type layer (4). An insulating layer (7) covers the n-type and p-type layers (2),(4), while also partially covering the n-side and p-side electrodes (5),(6), leaving part of the electrodes (5, 6) exposed. The n-side electrode (5) has a first Al layer (51) formed on the n-type layer (2) and a second Ni, W, Zr or Pt layer (52) formed on the first layer (51). The p-side electrode (6) has a first Au layer (61) formed on the p-type layer (4), and a second Ni, W, Zr or Pt layer (62) formed on the first layer (61).
摘要翻译：半导体发光体（A）包括在这两层（2,4）之间的n型半导体层（2），p型半导体层（4）和有源层（3）。光发射体（A）还包括在n型层（2）上的n侧电极（5）和p型层（4）上的p侧电极（6）。绝缘层（7）覆盖n型和p型层（2），（4），同时也部分地覆盖n侧和p侧电极（5），（6），留下部分电极（5,6）暴露。 n侧电极（5）具有形成在n型层（2）上的第一Al层（51）和形成在第一层（51）上的第二Ni，W，Zr或Pt层（52）。 p侧电极（6）具有形成在p型层（4）上的第一Au层（61）和形成在第一层（61）上的第二Ni，W，Zr或Pt层（62）。

4. 发明申请

US20100096649A1 Semiconductor Light Emitting Device and Manufacturing Method Therefor 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100096649A1
公开(公告)日：2010-04-22
申请号：US12579130
申请日：2009-10-14
申请人： Yukio SHAKUDA
发明人： Yukio SHAKUDA
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01L33/007 , H01L33/12 , H01L33/32 , H01S5/0213 , H01S5/0421 , H01S5/0422 , H01S5/2004 , H01S5/2009 , H01S5/22 , H01S5/2231 , H01S5/32 , H01S5/3211 , H01S5/3213 , H01S2301/173 , H01S2304/04
摘要： A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.
摘要翻译：双异质结的半导体发光器件包括有源层和覆层。包覆层包括n型层和p型层。包层夹层有源层。包覆层的带隙能量大于有源层的带隙能量。 n型覆层的带隙能比p型覆层小。

5. 发明申请

US20090269867A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT 有权
标题翻译：制备氮化物半导体和氮化物半导体元件的方法
公开(公告)号：US20090269867A1
公开(公告)日：2009-10-29
申请号：US12310372
申请日：2007-08-23
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： C30B25/14 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/10 , H01L33/12
摘要： The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.
摘要翻译：本发明提供了一种能够改善在高温AlN缓冲层顶部形成的氮化物半导体晶体的结晶度和表面状态的氮化物半导体的制造方法。在生长衬底的顶部上形成AlN缓冲层，然后在AlN缓冲层的顶部生长氮化物半导体晶体。在制造氮化物半导体的阶段，AlN缓冲层的晶体在900℃以上的高温下生长。此外，开始将AlN缓冲层的Al源材料首先供给到反应室，并且不间断地供给，然后间歇地供给N源材料。

6. 发明授权

US07501662B2 Semiconductor light emitting element array illuminator using the same 有权
标题翻译：使用其的半导体发光元件阵列照明器
公开(公告)号：US07501662B2
公开(公告)日：2009-03-10
申请号：US11801258
申请日：2007-05-09
申请人： Masayuki Sonobe , Yukio Shakuda
发明人： Masayuki Sonobe , Yukio Shakuda
IPC分类号： H01L29/18
CPC分类号： H01L27/156 , F21K9/232 , F21V3/061 , F21Y2115/10
摘要： A semiconductor light emitting element array includes a substrate made of SiC and having a first surface and a second surface opposite to the first surface. The array also includes a plurality of semiconductor light emitting elements supported by the first surface of the substrate. Each of the light emitting elements includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The second surface of the substrate serves as a light emitting surface, from which light produced by the light emitting elements is emitted out.
摘要翻译：半导体发光元件阵列包括由SiC制成并具有与第一表面相对的第一表面和第二表面的基板。阵列还包括由衬底的第一表面支撑的多个半导体发光元件。每个发光元件包括n型半导体层，有源层和p型半导体层。衬底的第二表面用作发光表面，由发光元件产生的光被发射出去。

7. 发明申请

US20080099767A1 GAN RELATED COMPOUND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME AND DEVICE HAVING THE SAME 有权
标题翻译： GAN相关化合物半导体元件及其制造方法和具有该元件的器件
公开(公告)号：US20080099767A1
公开(公告)日：2008-05-01
申请号：US11854585
申请日：2007-09-13
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L29/20 , H01L21/335
CPC分类号： H01L29/66712 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L29/0696 , H01L29/0847 , H01L29/0869 , H01L29/105 , H01L29/1054 , H01L29/2003 , H01L29/41766 , H01L29/4238 , H01L29/7809
摘要： A GaN related compound semiconductor element includes: a channel layer made of a GaN related compound semiconductor; and a source layer and a drain layer, which are disposed in a manner of sandwiching the channel layer. The source layer includes two adjacent ridge portions which are formed by selective growth. A source electrode is formed over the surface, sandwiched by the ridge portions, of the channel layer, and the surfaces of the respective two adjacent ridge portions. The selective-growth mask formed between the two ridge portions is removed by wet etching. In addition, as another embodiment, a gate electrode is formed in a manner that the direction of the longer dimension of the gate electrode is aligned with the m plane of the channel layer. Moreover, as still another embodiment, the channel layer has a multilayer structure in which a GaN layer doped with no impurity is used as an intermediate layer.
摘要翻译： GaN相关化合物半导体元件包括：由GaN相关化合物半导体制成的沟道层; 以及以层叠沟道层的方式设置的源极层和漏极层。源极层包括通过选择性生长形成的两个相邻的脊部分。源极电极形成在沟道层的表面，被脊部夹持的表面和相应的两个相邻脊部的表面之上。通过湿蚀刻除去在两个脊部之间形成的选择性生长掩模。此外，作为另一实施例，栅电极以使栅电极的较长尺寸的方向与沟道层的m平面对齐的方式形成。此外，作为另一实施例，沟道层具有其中不掺杂杂质的GaN层用作中间层的多层结构。

8. 发明授权

US07154127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07154127B2
公开(公告)日：2006-12-26
申请号：US11027945
申请日：2005-01-04
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/42
摘要： A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A current diffusing electrode is formed on the entire surface thereof. A bonding electrode is formed thereon. The semiconductor laminating portion and the current diffusing electrode are separated into light emitting unit portions A, electrode pad portion B, and connecting portions C for connecting between electrode pad portion B and light emitting unit portions A or between two of the light emitting unit portions A, and the semiconductor laminating portion between the light emitting unit portions A is removed through etching to make clearances except for connecting portions C. The bonding electrode is formed on electrode pad portion B.
摘要翻译：在半导体衬底上形成包括具有至少n型层和p型层的发光层形成部的半导体层叠部。电流阻挡层部分地形成在其表面上。在其整个表面上形成电流扩散电极。在其上形成接合电极。半导体层叠部分和电流扩散电极被分离成发光单元部分A，电极焊盘部分B和用于连接电极焊盘部分B和发光单元部分A之间或两个发光单元部分A之间的连接部分C 通过蚀刻去除发光单元部分A之间的半导体层叠部分，以除了连接部分C之外的间隙。接合电极形成在电极焊盘部分B上。

9. 发明申请

US20060261361A1 Semiconductor light emitting device 有权
公开(公告)号：US20060261361A1
公开(公告)日：2006-11-23
申请号：US11434111
申请日：2006-05-16
申请人： Yukio Shakuda
发明人： Yukio Shakuda
IPC分类号： H01L33/00
CPC分类号： H01L27/156
摘要： A semiconductor lamination portion is formed on a substrate by laminating semiconductor layers so as to form a light emitting layer, and a plurality of light emitting units are formed by separating the semiconductor lamination portion electrically into a plurality of units. Each of the units has a pair of electric connecting portions which are connected to a pair of conductivity type layers and they are connected to each other with a wiring film. Each of the plurality of the light emitting units is separated electrically by dividing the conductivity type layers of the semiconductor lamination portion with at least twofold separating grooves (a first separating groove and a second separating groove). As a consequence, a semiconductor light emitting device with a high luminance and being formed in a monolithic type having a plurality of light emitting units can be obtained to solve a problem of a short-circuit occurrence between the light emitting units while keeping high reliability of wiring or the like.

10. 发明授权

US07019323B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07019323B2
公开(公告)日：2006-03-28
申请号：US10690580
申请日：2003-10-23
申请人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
发明人： Yukio Shakuda , Yukio Matsumoto , Nobuaki Oguro
IPC分类号： H01L29/06
CPC分类号： H01L33/405 , Y10S257/918
摘要： A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semiconductor layered portion, a second metal layer made of Ag, and a third metal layer made of a metal which allows adhesion to the conductive substrate at a low temperature. As a result, the rate of reflection of light from the metal layer increases due to the presence of Ag in the metal layer. Further, the metal in the metal layer is prohibited from diffusing into the semiconductor layer, so that the semiconductor layer does not absorb light. And therefore the brightness of the semiconductor light emitting device can further be increased.
摘要翻译：通过将具有发光层形成部分的半导体层叠部分经由金属层粘附到导电基板来形成半导体发光器件。金属层至少具有用于与半导体层叠部分欧姆接触的第一金属层，由Ag制成的第二金属层和由金属制成的第三金属层，其允许在低温下粘附到导电基板。结果，由于在金属层中存在Ag，来自金属层的光的反射率增加。此外，金属层中的金属被禁止扩散到半导体层中，使得半导体层不吸收光。因此，能够进一步提高半导体发光元件的亮度。

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