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1. 发明授权

US06258619B1 Fabrication of semiconductor light emitting device 失效
标题翻译：半导体发光器件的制造
公开(公告)号：US06258619B1
公开(公告)日：2001-07-10
申请号：US09337396
申请日：1999-06-22
申请人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Masayuki Sonobe , Shunji Nakata , Yukio Shakuda , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L2120
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device includes a substrate, an n-type layer formed of gallium-nitride based compound semiconductor formed on the substrate, and a p-type layer formed of gallium-nitride based compound semiconductor formed on the substrate. Semiconductor overlying layers are constituted by the n-type layer and the p-type layer on the substrate. A light emitting layer is formed together with the n-type and p-type layers in the semiconductor overlying layers to emit light. At least one of the n-type layer and the p-type layer is formed by three or more overlying sublayers including a sublayer of AlyGa1-yN (0
摘要翻译：半导体发光器件包括衬底，由形成在衬底上的氮化镓基化合物半导体形成的n型层和形成在衬底上的由氮化镓基化合物半导体形成的p型层。半导体覆盖层由衬底上的n型层和p型层构成。在半导体覆盖层中与n型和p型层一起形成发光层以发光。 n型层和p型层中的至少一层由包括AlyGa1-yN（0

2. 发明授权

US6156584A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US6156584A
公开(公告)日：2000-12-05
申请号：US48110
申请日：1998-03-26
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21/301 , H01L27/12 , H01L33/32 , H01L33/36 , H01S5/02 , H01S5/323 , H01L21/302
CPC分类号： H01S5/0201 , H01L33/0095 , H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： Deposited on a wafer-like substrate for forming a plurality of light emitting device chips is a semiconductor layer laminate with a different property from that of the substrate. Then, electrodes are provided on and in electric connection with a top semiconductor layer of a first conductivity type of the semiconductor layer laminate, and on and in electric connection with a semiconductor layer of a second conductivity type, exposed by locally etching the semiconductor layer laminate, in association with the individual chips. Then, the semiconductor layer laminate is etched at boundary portions between the chips to expose the substrate, and the substrate is broken at the exposed portions into the chips. As the semiconductor layer laminate is etched out at the boundary portions between the chips before breaking the wafer, breaking can be facilitated without damaging the light emitting portions of the semiconductor layer laminate. This helps provide high-performance semiconductor light emitting devices.
摘要翻译：沉积在用于形成多个发光器件芯片的晶片状衬底上的是具有与衬底不同的性质的半导体层层压体。然后，电极设置在第一导电类型的半导体层层叠体的顶部半导体层上并与之连接，并与第二导电类型的半导体层电连接，通过局部蚀刻半导体层层叠体，与个别芯片相关联。然后，在芯片之间的边界部分处蚀刻半导体层层叠体，使基板露出，使基板在露出部分断裂成芯片。由于半导体层层叠体在断裂晶片之前在芯片之间的边界部分被蚀刻掉，所以可以在不破坏半导体层叠层的发光部分的情况下进行破坏。这有助于提供高性能半导体发光器件。

3. 发明授权

US6107644A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US6107644A
公开(公告)日：2000-08-22
申请号：US12209
申请日：1998-01-23
申请人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
发明人： Yukio Shakuda , Shunji Nakata , Masayuki Sonobe , Tsuyoshi Tsutsui , Norikazu Itoh
IPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , H01L33/38 , H01L27/15
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/32
摘要： A semiconductor light emitting device has semiconductor layers including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on a substrate. A first electrode is formed in electrical connection with the first conductivity type semiconductor layer on a surface side of the semiconductor layers. The second conductivity type semiconductor layer is exposed by partly etch-removing an end portion of the semiconductor layers. A second electrode is provided in electrical connection with the exposed second conductivity type layer. The first and second electrodes are formed such that the electrodes are in parallel, in plan form, with each other at opposite portions thereof. As a result, the current path is constant in electric resistance, providing a semiconductor light emitting device that is constant in brightness, long in service life and high in brightness.
摘要翻译：半导体发光器件具有包括形成在衬底上的第一导电类型半导体层和第二导电类型半导体层的半导体层。第一电极在半导体层的表面侧与第一导电类型半导体层电连接形成。通过部分蚀刻除去半导体层的端部来暴露第二导电类型半导体层。提供与暴露的第二导电类型电连接的第二电极。第一和第二电极被形成为使得电极在平面形式上彼此平行，彼此相对。结果，电流路径恒定，提供亮度恒定，使用寿命长，亮度高的半导体发光元件。

4. 发明授权

US06194241B1 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06194241B1
公开(公告)日：2001-02-27
申请号：US09059388
申请日：1998-04-14
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A semiconductor layered portion is formed of a gallium-nitride semiconductor overlying a substrate and having an n-type layer and a p-type layer to form a light emitting layer having a pn junction or a doublehetero junction. A gradient layer is provided at an interfacial portion between an lower layer and an upper layer of the semiconductor layered portion, wherein the gradient layer has a composition varied from a composition from said lower layer to a composition of the upper layer. With this structure, a semiconductor light emitting device which is excellent in light emitting efficiency is provided by reducing crystal lattice mismatch between semiconductor layers formed different in lattice constant on a substrate.
摘要翻译：半导体层叠部分由覆盖在衬底上并具有n型层和p型层的氮化镓半导体形成，以形成具有pn结或双重结的发光层。梯度层设置在半导体层叠部分的下层和上层之间的界面部分处，其中梯度层具有从所述下层的组成和上层的组成不同的组成。利用这种结构，通过减少在衬底上形成的晶格常数不同的半导体层之间的晶格失配，提供了发光效率优异的半导体发光器件。

5. 发明授权

US06168962A Method of manufacturing a semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US06168962A
公开(公告)日：2001-01-02
申请号：US09012193
申请日：1998-01-23
申请人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
发明人： Norikazu Itoh , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Tsuyoshi Tsutsui
IPC分类号： H01L21302
CPC分类号： H01L33/0095
摘要： Disclosed is a method of manufacturing a semiconductor light emitting device. Semiconductor overlying layers are formed on a substrate in a state of a wafer so that a light emitting area is provided therein. The semiconductor overlying layers includes first and second conductivity type layers. Part of the semiconductor overlying layers including the first conductivity type layer on a surface thereof is removed so as to expose part of the second conductivity type layer. Electrodes are formed, for each chip, respectively in connection with the surface of the first conductivity type layer and the surface of the exposed second conductivity type layer. The wafer is divided into individual chips. The exposed areas of the second conductivity type semiconductor layer is provided only part of a peripheral area of the chip so that the first conductivity type semiconductor layer is directly separated during dividing the wafer into individual chips. With such a method, when dividing a wafer into chips, the inefficiency of the space (etched areas do not contribute to light emission) is eliminated in etch-removing the semiconductor overlying layers at areas to be divided, thereby improving chip yield and hence reducing cost.
摘要翻译：公开了半导体发光器件的制造方法。在晶片的状态下在基板上形成半导体覆盖层，以便在其中提供发光区域。半导体覆盖层包括第一和第二导电类型层。除去包括其表面上的第一导电类型的半导体覆盖层的一部分，以暴露部分第二导电类型层。对于每个芯片，分别与第一导电类型层的表面和暴露的第二导电类型层的表面分别形成电极。晶片分为单个芯片。第二导电类型半导体层的暴露区域仅提供芯片的周边区域的一部分，使得在将晶片分成单个芯片期间，第一导电类型半导体层被直接分离。通过这样的方法，当将晶片分成芯片时，在要分割的区域上的半导体覆盖层的蚀刻去除中消除了空间（蚀刻区域对光发射没有贡献）的低效率，从而提高了芯片产量并因此降低了成本。

6. 发明授权

US5939735A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5939735A
公开(公告)日：1999-08-17
申请号：US993091
申请日：1997-12-18
申请人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
发明人： Tsuyoshi Tsutsui , Shunji Nakata , Yukio Shakuda , Masayuki Sonobe , Norikazu Itoh
IPC分类号： H01L33/10 , H01L33/32 , H01L33/46 , H01S5/00 , H01S5/323 , H01L33/00
CPC分类号： H01L33/46 , H01L33/007 , H01L2924/0002 , H01L2933/0083
摘要： A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
摘要翻译：半导体发光器件包括衬底和形成在衬底上的半导体覆盖层。在半导体层中形成发光层以发光。基板可透射由发光层发射的光。在基板的背面的一部分上形成光反射层。结果，半导体发光器件可以通过从晶片背面识别形成在晶片的主表面上的半导体层芯片图案容易地分割其上具有发光膜的晶片而获得。

7. 发明申请

US20090121240A1 Nitride Semiconductor Device and Method for Manufacturing the Same 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090121240A1
公开(公告)日：2009-05-14
申请号：US12083836
申请日：2006-10-19
申请人： Yukio Shakuda , Masayuki Sonobe , Norikazu Ito
发明人： Yukio Shakuda , Masayuki Sonobe , Norikazu Ito
IPC分类号： H01L33/00 , H01L29/205 , H01L21/205
CPC分类号： H01L33/12 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5) is used for a substrate, crystallinity of nitride semiconductor grown thereon is improved and film separation or cracks are prevented. The nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1) made of a zinc oxide based compound such as MgxZn1-xO (0≦x≦0.5). The nitride semiconductor layers include a first nitride semiconductor layer (2) made of AlyGa1-yN (0.05≦y≦0.2) which is provided in contact with the substrate (1), and nitride semiconductor layers (3) to (5) laminated on the first nitride semiconductor layer (2) so as to form a semiconductor element.
摘要翻译：提供了一种具有低漏电流和高效率的氮化物半导体器件，其中，当将基于氧化锌的化合物如Mg x Zn 1-x O（0 <= x <= 0.5）用于衬底时，其上生长的氮化物半导体的结晶度为防止了改进的膜分离或裂纹。氮化物半导体器件通过在由诸如Mg x Zn 1-x O（0 <= x <= 0.5）的氧化锌基化合物制成的衬底（1）上层叠氮化物半导体层而形成。氮化物半导体层包括与基板（1）接触地设置的Al y Ga 1-y N（0.05≤y≤0.2）和氮化物半导体层（3）〜（5）构成的第一氮化物半导体层（2）层压在第一氮化物半导体层（2）上以形成半导体元件。

8. 发明授权

US07501662B2 Semiconductor light emitting element array illuminator using the same 有权
标题翻译：使用其的半导体发光元件阵列照明器
公开(公告)号：US07501662B2
公开(公告)日：2009-03-10
申请号：US11801258
申请日：2007-05-09
申请人： Masayuki Sonobe , Yukio Shakuda
发明人： Masayuki Sonobe , Yukio Shakuda
IPC分类号： H01L29/18
CPC分类号： H01L27/156 , F21K9/232 , F21V3/061 , F21Y2115/10
摘要： A semiconductor light emitting element array includes a substrate made of SiC and having a first surface and a second surface opposite to the first surface. The array also includes a plurality of semiconductor light emitting elements supported by the first surface of the substrate. Each of the light emitting elements includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The second surface of the substrate serves as a light emitting surface, from which light produced by the light emitting elements is emitted out.
摘要翻译：半导体发光元件阵列包括由SiC制成并具有与第一表面相对的第一表面和第二表面的基板。阵列还包括由衬底的第一表面支撑的多个半导体发光元件。每个发光元件包括n型半导体层，有源层和p型半导体层。衬底的第二表面用作发光表面，由发光元件产生的光被发射出去。

9. 发明授权

US06329216B1 Method of manufacturing an AlGaInP light emitting device using auto-doping 失效
标题翻译：使用自动掺杂的AlGaInP发光器件的制造方法
公开(公告)号：US06329216B1
公开(公告)日：2001-12-11
申请号：US09597568
申请日：2000-06-20
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/02 , H01L33/14 , H01L33/305
摘要： A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting layer forming portion. The window layer is formed of AlyGal−yAs (0.6≦y≦0.8) auto-doped in a carrier concentration of 5×1018-3×1019 cm−3. The resulting semiconductor light emitting device is free of degradation in crystallinity due to p-type impurity doping, thereby provide a high light emitting efficiency and brightness without encountering device degradation or damage.
摘要翻译：半导体发光器件具有形成在衬底上并具有n型层和p型层以提供发光层的发光层形成部分。在发光层形成部分的表面侧上形成窗口层。窗口层由载流子浓度为5×10 18 -3×10 19 cm -3自动掺杂的AllyGal-yAs（0.6 <= y <= 0.8）形成。所得到的半导体发光器件由于p型杂质掺杂而不会降低结晶度，从而提供高的发光效率和亮度，而不会遇到器件劣化或损坏。

10. 发明授权

US6163037A Double heterojunction light emitting device possessing a dopant gradient across the N-type layer 失效
标题翻译：双异质结发光器件在N型层上具有掺杂剂梯度
公开(公告)号：US6163037A
公开(公告)日：2000-12-19
申请号：US79262
申请日：1998-05-15
申请人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
发明人： Yukio Matsumoto , Shunji Nakata , Yukio Shakuda
IPC分类号： H01L33/12 , H01L33/14 , H01L33/30 , H01S5/00 , H01L33/00
CPC分类号： H01L33/02 , H01L33/025 , H01L33/30
摘要： An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5.times.10.sup.17 cm.sup.-3 on a side thereof close to the active layer, and a carrier concentration of 7.times.10.sup.17 -7.times.10.sup.18 cm .sup.-3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.
摘要翻译：有源层被夹在n型覆层和p型覆层之间，形成发光层形成部分。 n型包层在其接近有源层的一侧上具有非掺杂或小于5×10 17 cm -3的载流子浓度，并且其远离活性物质的一侧的载流子浓度为7×10 17 -7×10 18 cm -3 层。利用这种结构，可以最大限度地抑制有源层和n型包层之间以及活性层中的界面处的结晶度的劣化。从而提供高亮度的半导体发光器件。

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