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1. 发明授权

US5383277A Writing apparatus and method 失效
标题翻译：书写装置和方法
公开(公告)号：US5383277A
公开(公告)日：1995-01-24
申请号：US29399
申请日：1993-03-10
申请人： Mitsugi Shimoda , Hiroaki Hatori , Yoshinori Takubo , Takashi Masuda , Hirokazu Takada
发明人： Mitsugi Shimoda , Hiroaki Hatori , Yoshinori Takubo , Takashi Masuda , Hirokazu Takada
IPC分类号： B43L13/00
CPC分类号： B43L13/00
摘要： In order to reduce an impact noise which is made when a pen lifting rail (5) is swung up into contact with a pen support arm (4) in a writing apparatus wherein the arm is swung up and down by swinging the rail up and down, in the present invention, immediately before the pen lifting rail (5) being swung up by de-energizing a solenoid, which is energized to swing down the rail, comes into contact with the bottom of the pen support arm (4), the solenoid is instantaneously energized to slow down the upward swinging of the rail to reduce the impact noise.
摘要翻译：为了减少当笔式升降轨（5）在书写装置中与笔支撑臂（4）接触时所产生的冲击噪音，其中通过将轨道上下摆动来上下摆动臂在本发明中，在笔提升轨道（5）正在通过使通向轨道下方向下摆动的螺线管断电之前，与钢笔支撑臂（4）的底部接触的情况下，螺线管瞬间通电，以减缓轨道的向上摆动，以减少冲击噪音。

2. 发明申请

US20120064302A1 PATTERNING METHOD 审中-公开
标题翻译：绘图方法
公开(公告)号：US20120064302A1
公开(公告)日：2012-03-15
申请号：US13263805
申请日：2010-04-09
申请人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
发明人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
IPC分类号： B32B3/30 , B05D3/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C01B33/02 , C01B33/027 , C01B33/18 , C01P2004/01 , C01P2004/20 , C23C18/06 , C23C18/08 , C23C18/1208 , C23C18/1279 , C23C18/14 , H01L21/02164 , H01L21/02282 , H01L21/0237 , H01L21/02532 , H01L21/02623 , H01L21/02656 , H01L21/31 , Y10T428/24612
摘要： A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.
摘要翻译：一种图案化方法，包括以下步骤：在衬底和图案化模具之间的空间中设置选自由硅化合物和硅卤化物组成的组中的至少一种硅烷化合物的第一步骤; 以及对硅烷化合物进行选自热处理和紫外线曝光处理中的至少一种处理的第二步骤。可以通过在惰性气氛或还原气氛中进行第二步骤形成由硅构成的图案，并且可以通过在含氧气氛中进行至少一部分第二步骤来形成由氧化硅组成的图案。

3. 发明申请

US20110256699A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20110256699A1
公开(公告)日：2011-10-20
申请号：US13142147
申请日：2009-10-26
申请人： Takashi Masuda
发明人： Takashi Masuda
IPC分类号： H01L21/283
CPC分类号： H01L29/872 , H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/47 , H01L29/6606
摘要： Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
摘要翻译：提供一种能够通过简单的方法获得具有高正向电流和低反向泄漏电流的碳化硅半导体器件的制造碳化硅半导体器件的方法。制造碳化硅半导体器件的方法包括以下步骤：在碳化硅衬底的一个表面上形成由第一电极材料制成的膜，并通过在930至950℃的温度范围内进行热处理形成欧姆电极 C。; 以及在所述碳化硅衬底的另一表面上形成由第二电极材料制成的膜，并通过进行热处理形成肖特基电极。

4. 发明申请

US20110144498A1 IMAGE DISPLAY APPARATUS 有权
标题翻译：图像显示设备
公开(公告)号：US20110144498A1
公开(公告)日：2011-06-16
申请号：US12958806
申请日：2010-12-02
申请人： Kouji Ando , Shouichi Nakauchi , Takeshi Sugio , Takashi Masuda
发明人： Kouji Ando , Shouichi Nakauchi , Takeshi Sugio , Takashi Masuda
IPC分类号： A61B8/14 , G09G5/00
CPC分类号： A61B8/466 , A61B8/463 , A61B8/469 , A61B8/483 , G06T19/003 , G06T2210/41 , G06T2219/004 , G06T2219/028
摘要： According to one embodiment, a medical image display apparatus includes a storage unit storing data of a three-dimensional image, a slice image generating unit generating three slice images associated with three slices from the three-dimensional image, a display unit displaying the three slice images respectively in three display areas, an ROI marker generating unit generating three ROI markers to be respectively superimposed on the displayed three slice images, the three ROI markers corresponding to a single ROI, an operation unit performing operation of changing relative positions between the three slice images and the three ROI markers, and a display control unit controlling move the three slice images in the three display areas in accordance with the operation of changing the relative positions and fix the three ROI markers at center positions of the three display areas.
摘要翻译：根据一个实施例，医疗图像显示装置包括存储三维图像数据的存储单元，从三维图像生成与三个切片相关联的三个切片图像的切片图像生成单元，显示三个切片分别在三个显示区域中的ROI标记生成单元，生成分别叠加在显示的三个图像上的三个ROI标记，与单个ROI对应的三个ROI标记，操作单元，执行改变三个切片之间的相对位置的操作图像和三个ROI标记，以及显示控制单元，根据改变相对位置的操作，将三个ROI标记固定在三个显示区域的中心位置，控制三个显示区域中的三个切片图像。

5. 发明申请

US20110015428A1 Process for Producing Alpha-Fluoro-Beta-Amino Acids 有权
标题翻译：生产α-氟-β-氨基酸的方法
公开(公告)号：US20110015428A1
公开(公告)日：2011-01-20
申请号：US12919108
申请日：2009-04-21
申请人： Akihiro Ishii , Takako Yamazaki , Manabu Yasumoto , Takashi Masuda , Hideyuki Tsuruta
发明人： Akihiro Ishii , Takako Yamazaki , Manabu Yasumoto , Takashi Masuda , Hideyuki Tsuruta
IPC分类号： C07C227/16
CPC分类号： C07C227/16 , C07B55/00 , C07C227/32 , C07C229/20
摘要： By reacting a β-hydroxy-α-amino acid with sulfuryl fluoride (SO2F2) in the presence of an organic base, it is possible to produce an α-fluoro-β-amino acid of the formula [2]. By using a C8-12 tertiary amine having two or more alkyl groups of C3 or higher, and especially diisopropylethylamine, as the organic base, by-production of quantery ammonium salts is effectively suppressed. By applying the production process of the present invention, it is possible to very easily produce (2R)-3-(dibenzylamino)-2-fluoropropionic acid methyl ester, which is extremely important as a pharmaceutical intermediate, with high positional selectivity even on an industrial scale.
摘要翻译：通过在有机碱的存在下使β-羟基-α-氨基酸与硫酰氟（SO2F2）反应，可以制备式[2]的α-氟 - 二 - 氨基酸。通过使用具有两个以上具有3个以上的烷基的C8-12叔胺，特别是二异丙基乙胺作为有机碱，有效地抑制了副铵盐的副产物。通过应用本发明的制备方法，可以非常容易地制备作为药物中间体极其重要的（2R）-3-（二苄基氨基）-2-氟丙酸甲酯，即使在工业规模。

6. 发明授权

US07636232B2 Electric double layer capacitor 有权
标题翻译：双电层电容器
公开(公告)号：US07636232B2
公开(公告)日：2009-12-22
申请号：US12260222
申请日：2008-10-29
申请人： Kenro Mitsuda , Yoshiyuki Takuma , Daigo Takemura , Kazuki Kubo , Tetsuo Mitani , Fumiyuki Miyamoto , Takashi Masuda
发明人： Kenro Mitsuda , Yoshiyuki Takuma , Daigo Takemura , Kazuki Kubo , Tetsuo Mitani , Fumiyuki Miyamoto , Takashi Masuda
IPC分类号： H01G9/00
CPC分类号： H01G9/038 , H01G9/06 , H01G9/08 , H01G9/155 , H01G11/04 , H01G11/26 , H01G11/54 , Y02E60/13
摘要： A porous electrolytic solution reservoir which is capable of being impregnated with an electrolytic solution is provided in an exterior case so as to make contact with a separator. The average diameter of the pores in the electrolytic solution reservoir is greater than the average diameter of pores in the separator. The electrolytic solution reservoir is impregnated with a predetermined amount of electrolytic solution, so that the occupation ratio of electrolytic solution within the pores in the separator becomes 50% or more when fully charged, and the occupation ratio of electrolytic solution within the pores in the electrolytic solution reservoir becomes 100% or less when fully discharged.
摘要翻译：在外壳中设置能够浸渍电解液的多孔电解液储存器，以便与隔膜接触。电解液储存器中的孔的平均直径大于分离器中孔的平均直径。电解液储存器用预定量的电解液浸渍，使得当充满电时，隔膜孔内电解液的占有率变为50％以上，电解液中电解液的占空比溶液储存器在完全放电时变为100％以下。

7. 发明授权

US07626154B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US07626154B2
公开(公告)日：2009-12-01
申请号：US11560265
申请日：2006-11-15
申请人： Masafumi Sei , Takashi Masuda
发明人： Masafumi Sei , Takashi Masuda
IPC分类号： H04N5/225 , G02B5/30 , H04N9/07
CPC分类号： H04N9/093 , H04N9/045
摘要： Frequency characteristics of an optical low-pass filter (2) are set in such a way that a first false color passing rate indicative of the rate of frequency components passing through a frequency component region not lower than the Nyquist frequency fa for the lowest sampling frequency fs among the sampling frequencies in the longitudinal, the lateral, and the oblique directions for each color in an image sensor (5), i.e. a frequency component region lower than one half of the Nyquist frequency fs of the sampling frequency fs of the image sensor (5), is not higher than a specified value. An output image signal is created from a pixel signal created by the image sensor (5) so that N pixel signals (N is real number of 2 or above) created by the image sensor (5) correspond to one output image signal.
摘要翻译：光学低通滤波器（2）的频率特性被设置为使得指示频率分量的速率的第一假色通过率通过不低于奈奎斯特频率fa的频率分量区域，用于最低采样频率在图像传感器（5）中的每种颜色的纵向，横向和倾斜方向的采样频率中的fs，即低于图像传感器（5）的采样频率fs的奈奎斯特频率fs的一半的频率分量区域（5），不高于规定值。由图像传感器（5）创建的像素信号产生输出图像信号，使得由图像传感器（5）创建的N个像素信号（N是2或以上的实数）对应于一个输出图像信号。

8. 发明授权

US07521299B2 Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device 失效
标题翻译：晶体管的制造方法，电光装置的制造方法以及电子装置的制造方法
公开(公告)号：US07521299B2
公开(公告)日：2009-04-21
申请号：US11140748
申请日：2005-06-01
申请人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
发明人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
IPC分类号： H01L21/84
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L27/283 , H01L29/66757 , H01L51/0005 , H01L51/0022 , H01L51/0541
摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.
摘要翻译：一种晶体管的制造方法，其特征在于，在基板上设置含有作为溶质或分散质的堤料的液滴，干燥所述液滴以形成堤，在所述堤的一部分上排出导电性物质，形成第一导电性区域和第二导电区域，其中一部分插入其间，去除堤以在第一和第二导电区域之间形成沟槽，将半导体材料供应到沟槽中以形成半导体膜，在半导体膜上形成栅极绝缘膜，以及在面对半导体膜的栅极绝缘膜上的位置处形成栅电极。

9. 发明授权

US07504709B2 Electronic device, method of manufacturing an electronic device, and electronic apparatus 有权
标题翻译：电子设备，电子设备的制造方法和电子设备
公开(公告)号：US07504709B2
公开(公告)日：2009-03-17
申请号：US11208783
申请日：2005-08-23
申请人： Takashi Masuda , Hiroshi Takiguchi
发明人： Takashi Masuda , Hiroshi Takiguchi
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L23/58
CPC分类号： H01L51/0541 , H01L51/0021 , H01L51/0052
摘要： An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least one of surfaces of the pair of electrodes.
摘要翻译：一种电子设备，包括：一对电极; 有机半导体层; 以及由有机化合物形成的有机膜，所述有机化合物包括与所述一对电极的至少一个表面耦合的非共轭有机化合物。

10. 发明授权

US07476230B2 Insertion device for an intraocular lens 有权
标题翻译：用于眼内透镜的插入装置
公开(公告)号：US07476230B2
公开(公告)日：2009-01-13
申请号：US10951339
申请日：2004-09-27
申请人： Kenichiro Ohno , Kenichi Shinzaki , Takashi Masuda
发明人： Kenichiro Ohno , Kenichi Shinzaki , Takashi Masuda
IPC分类号： A61F9/00
CPC分类号： A61F2/1678
摘要： In an intraocular-lens insertion device for deforming a deformable intraocular lens to a smaller size and inserting the intraocular lens into an eye via an insertion tube, the insertion tube has such an inner wall shape as to cause the deformable intraocular lens to move rotationally about an insertion tube axis by a predetermined angle in the course of axial movement.
摘要翻译：在用于使可变形眼内透镜变形为较小尺寸并经由插管将眼内透镜插入眼睛的眼内透镜插入装置中，插入管具有这样的内壁形状，以使可变形眼内透镜围绕插入管轴在轴向移动过程中以预定角度。

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