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1. 发明授权

US07521299B2 Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device 失效
标题翻译：晶体管的制造方法，电光装置的制造方法以及电子装置的制造方法
公开(公告)号：US07521299B2
公开(公告)日：2009-04-21
申请号：US11140748
申请日：2005-06-01
申请人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
发明人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
IPC分类号： H01L21/84
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L27/283 , H01L29/66757 , H01L51/0005 , H01L51/0022 , H01L51/0541
摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.
摘要翻译：一种晶体管的制造方法，其特征在于，在基板上设置含有作为溶质或分散质的堤料的液滴，干燥所述液滴以形成堤，在所述堤的一部分上排出导电性物质，形成第一导电性区域和第二导电区域，其中一部分插入其间，去除堤以在第一和第二导电区域之间形成沟槽，将半导体材料供应到沟槽中以形成半导体膜，在半导体膜上形成栅极绝缘膜，以及在面对半导体膜的栅极绝缘膜上的位置处形成栅电极。

2. 发明申请

US20060154406A1 Method of manufacturing transistor, method of manufacturing electro-optical device, and method of manufacturing electronic device 失效
公开(公告)号：US20060154406A1
公开(公告)日：2006-07-13
申请号：US11140748
申请日：2005-06-01
申请人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
发明人： Hideki Tanaka , Takashi Masuda , Ichio Yudasaka , Takashi Aoki
IPC分类号： H01L21/8232 , H01L21/335
CPC分类号： B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L27/283 , H01L29/66757 , H01L51/0005 , H01L51/0022 , H01L51/0541
摘要： A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.

3. 发明授权

US07510093B2 Method of manufacturing a wiring substrate, method of manufacturing an electro-optical device, method of manufacturing an electronic apparatus 失效
标题翻译：布线基板的制造方法，电光装置的制造方法，电子设备的制造方法
公开(公告)号：US07510093B2
公开(公告)日：2009-03-31
申请号：US11200162
申请日：2005-08-10
申请人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichio Yudasaka
发明人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichio Yudasaka
IPC分类号： H01B13/00 , H01L21/302
CPC分类号： H01L21/32139 , G02B6/43 , H01L21/28123 , H01L27/1292 , H05K3/061 , H05K2203/013
摘要： An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.
摘要翻译：本发明的蚀刻方法包括将包含成膜材料的液滴布置在基板上，干燥每个液滴以形成宽度小于布置时每个液滴的直径的干膜，并进行蚀刻，同时使用干膜作为蚀刻保护膜。

4. 发明申请

US20060037935A1 Method of manufacturing a wiring substrate, method of manufacturing an electro-optical device, method of manufacturing an electronic apparatus 失效
公开(公告)号：US20060037935A1
公开(公告)日：2006-02-23
申请号：US11200162
申请日：2005-08-10
申请人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichiro Yudasaka
发明人： Takashi Aoki , Takashi Masuda , Hideki Tanaka , Ichiro Yudasaka
IPC分类号： H01B13/00 , B29D11/00
CPC分类号： H01L21/32139 , G02B6/43 , H01L21/28123 , H01L27/1292 , H05K3/061 , H05K2203/013
摘要： An etching method of the invention includes arranging droplets including a film-forming material on a substrate, drying each of the droplets to form a dry film having a width smaller than the diameter of each droplet at the time of the arrangement, and performing etching while using the dry film as an etching protective film.

5. 发明授权

US07348224B2 Method for manufacturing thin film transistor, electro-optical device and electronic apparatus 有权
标题翻译：薄膜晶体管，电光器件和电子设备的制造方法
公开(公告)号：US07348224B2
公开(公告)日：2008-03-25
申请号：US11175347
申请日：2005-07-07
申请人： Ichio Yudasaka , Takashi Masuda
发明人： Ichio Yudasaka , Takashi Masuda
IPC分类号： H01L21/00 , H01L27/01
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02628 , H01L21/02636 , H01L27/1292 , H01L27/3244 , H01L29/78645 , H01L51/0004 , H01L51/0021 , H01L51/0541
摘要： A method for manufacturing a thin film transistor results in a thin film transistor including a semiconductor film, a channel region provided in the semiconductor film, source and drain regions sandwiching the channel region, and a gate electrode facing the channel region with an intermediary of a gate insulating film. The method includes depositing a droplet that includes a semiconductor material on a substrate; and forming the semiconductor film by drying the droplet to precipitate the semiconductor material on at least a peripheral edge of the droplet.
摘要翻译：制造薄膜晶体管的方法导致包括半导体膜，设置在半导体膜中的沟道区，夹着沟道区的源极和漏极区以及与沟道区相对的栅电极的薄膜晶体管，栅极绝缘膜。该方法包括在衬底上沉积包含半导体材料的液滴; 以及通过干燥所述液滴形成所述半导体膜，以使所述半导体材料在所述液滴的至少周边边缘上沉淀。

6. 发明申请

US20060008956A1 Method for manufacturing thin film transistor, electro-optical device and electronic apparatus 有权
标题翻译：薄膜晶体管，电光器件和电子设备的制造方法
公开(公告)号：US20060008956A1
公开(公告)日：2006-01-12
申请号：US11175347
申请日：2005-07-07
申请人： Ichio Yudasaka , Takashi Masuda
发明人： Ichio Yudasaka , Takashi Masuda
IPC分类号： H01L21/00 , H01L21/20 , H01L51/40
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02628 , H01L21/02636 , H01L27/1292 , H01L27/3244 , H01L29/78645 , H01L51/0004 , H01L51/0021 , H01L51/0541
摘要： A method for manufacturing a thin film transistor results in a thin film transistor including a semiconductor film, a channel region provided in the semiconductor film, source and drain regions sandwiching the channel region, and a gate electrode facing the channel region with an intermediary of a gate insulating film. The method includes depositing a droplet that includes a semiconductor material on a substrate; and forming the semiconductor film by drying the droplet to precipitate the semiconductor material on at least a peripheral edge of the droplet.
摘要翻译：制造薄膜晶体管的方法导致包括半导体膜，设置在半导体膜中的沟道区，夹着沟道区的源极和漏极区以及与沟道区相对的栅电极的薄膜晶体管，栅极绝缘膜。该方法包括在衬底上沉积包含半导体材料的液滴; 以及通过干燥所述液滴形成所述半导体膜，以使所述半导体材料在所述液滴的至少周边边缘上沉淀。

7. 发明授权

US08038972B2 Higher order silane composition, method for manufacturing film-coated substrate, electro-optical device and electronic device 有权
标题翻译：高级硅烷组合物，薄膜基材的制造方法，电光装置和电子装置
公开(公告)号：US08038972B2
公开(公告)日：2011-10-18
申请号：US11972306
申请日：2008-01-10
申请人： Takashi Masuda , Makoto Kato , Hideki Tanaka
发明人： Takashi Masuda , Makoto Kato , Hideki Tanaka
IPC分类号： C01B33/04 , C04B41/50 , C04B35/00 , B05D3/02
CPC分类号： C23C18/1212 , C23C18/122 , C23C18/14 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/02628 , H01L21/32105
摘要： A higher order silane composition, includes: a higher order silane compound; and a solvent containing one of a substituted hydrocarbon based solvent and an unsubstituted hydrocarbon based solvent. As the solvent, a solvent having a refractive index of 1.53 or more is selected so that the higher order silane compound is dissolved therein.
摘要翻译：高级硅烷组合物包括：高级硅烷化合物; 和含有取代的烃类溶剂和未取代的烃类溶剂之一的溶剂。作为溶剂，选择折射率为1.53以上的溶剂，以使其中溶解高级硅烷化合物。

8. 发明申请

US20120064302A1 PATTERNING METHOD 审中-公开
标题翻译：绘图方法
公开(公告)号：US20120064302A1
公开(公告)日：2012-03-15
申请号：US13263805
申请日：2010-04-09
申请人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
发明人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
IPC分类号： B32B3/30 , B05D3/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C01B33/02 , C01B33/027 , C01B33/18 , C01P2004/01 , C01P2004/20 , C23C18/06 , C23C18/08 , C23C18/1208 , C23C18/1279 , C23C18/14 , H01L21/02164 , H01L21/02282 , H01L21/0237 , H01L21/02532 , H01L21/02623 , H01L21/02656 , H01L21/31 , Y10T428/24612
摘要： A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.
摘要翻译：一种图案化方法，包括以下步骤：在衬底和图案化模具之间的空间中设置选自由硅化合物和硅卤化物组成的组中的至少一种硅烷化合物的第一步骤; 以及对硅烷化合物进行选自热处理和紫外线曝光处理中的至少一种处理的第二步骤。可以通过在惰性气氛或还原气氛中进行第二步骤形成由硅构成的图案，并且可以通过在含氧气氛中进行至少一部分第二步骤来形成由氧化硅组成的图案。

9. 发明申请

US20110256699A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20110256699A1
公开(公告)日：2011-10-20
申请号：US13142147
申请日：2009-10-26
申请人： Takashi Masuda
发明人： Takashi Masuda
IPC分类号： H01L21/283
CPC分类号： H01L29/872 , H01L21/0485 , H01L21/0495 , H01L29/0619 , H01L29/1608 , H01L29/47 , H01L29/6606
摘要： Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
摘要翻译：提供一种能够通过简单的方法获得具有高正向电流和低反向泄漏电流的碳化硅半导体器件的制造碳化硅半导体器件的方法。制造碳化硅半导体器件的方法包括以下步骤：在碳化硅衬底的一个表面上形成由第一电极材料制成的膜，并通过在930至950℃的温度范围内进行热处理形成欧姆电极 C。; 以及在所述碳化硅衬底的另一表面上形成由第二电极材料制成的膜，并通过进行热处理形成肖特基电极。

10. 发明申请

US20110144498A1 IMAGE DISPLAY APPARATUS 有权
标题翻译：图像显示设备
公开(公告)号：US20110144498A1
公开(公告)日：2011-06-16
申请号：US12958806
申请日：2010-12-02
申请人： Kouji Ando , Shouichi Nakauchi , Takeshi Sugio , Takashi Masuda
发明人： Kouji Ando , Shouichi Nakauchi , Takeshi Sugio , Takashi Masuda
IPC分类号： A61B8/14 , G09G5/00
CPC分类号： A61B8/466 , A61B8/463 , A61B8/469 , A61B8/483 , G06T19/003 , G06T2210/41 , G06T2219/004 , G06T2219/028
摘要： According to one embodiment, a medical image display apparatus includes a storage unit storing data of a three-dimensional image, a slice image generating unit generating three slice images associated with three slices from the three-dimensional image, a display unit displaying the three slice images respectively in three display areas, an ROI marker generating unit generating three ROI markers to be respectively superimposed on the displayed three slice images, the three ROI markers corresponding to a single ROI, an operation unit performing operation of changing relative positions between the three slice images and the three ROI markers, and a display control unit controlling move the three slice images in the three display areas in accordance with the operation of changing the relative positions and fix the three ROI markers at center positions of the three display areas.
摘要翻译：根据一个实施例，医疗图像显示装置包括存储三维图像数据的存储单元，从三维图像生成与三个切片相关联的三个切片图像的切片图像生成单元，显示三个切片分别在三个显示区域中的ROI标记生成单元，生成分别叠加在显示的三个图像上的三个ROI标记，与单个ROI对应的三个ROI标记，操作单元，执行改变三个切片之间的相对位置的操作图像和三个ROI标记，以及显示控制单元，根据改变相对位置的操作，将三个ROI标记固定在三个显示区域的中心位置，控制三个显示区域中的三个切片图像。

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