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1. 发明申请

US20120064302A1 PATTERNING METHOD 审中-公开
标题翻译：绘图方法
公开(公告)号：US20120064302A1
公开(公告)日：2012-03-15
申请号：US13263805
申请日：2010-04-09
申请人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
发明人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri , Takashi Masuda , Toshihiko Kaneda
IPC分类号： B32B3/30 , B05D3/12
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , C01B33/02 , C01B33/027 , C01B33/18 , C01P2004/01 , C01P2004/20 , C23C18/06 , C23C18/08 , C23C18/1208 , C23C18/1279 , C23C18/14 , H01L21/02164 , H01L21/02282 , H01L21/0237 , H01L21/02532 , H01L21/02623 , H01L21/02656 , H01L21/31 , Y10T428/24612
摘要： A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.
摘要翻译：一种图案化方法，包括以下步骤：在衬底和图案化模具之间的空间中设置选自由硅化合物和硅卤化物组成的组中的至少一种硅烷化合物的第一步骤; 以及对硅烷化合物进行选自热处理和紫外线曝光处理中的至少一种处理的第二步骤。可以通过在惰性气氛或还原气氛中进行第二步骤形成由硅构成的图案，并且可以通过在含氧气氛中进行至少一部分第二步骤来形成由氧化硅组成的图案。

2. 发明申请

US20110184141A1 POLYMER PRODUCTION PROCESS 审中-公开
标题翻译：聚合物生产工艺
公开(公告)号：US20110184141A1
公开(公告)日：2011-07-28
申请号：US13003641
申请日：2009-07-09
申请人： Tatsuya Shimoda , Ryo Kawajiri , Kiyoshi Isobe , Hidetaka Nakai , Yasuo Matsuki
发明人： Tatsuya Shimoda , Ryo Kawajiri , Kiyoshi Isobe , Hidetaka Nakai , Yasuo Matsuki
IPC分类号： C08G77/60 , C08G79/00 , C08G85/00
CPC分类号： C08G77/60 , C07F7/0896
摘要： A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). R4-nMHn (1) (in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.) [CpM(μ-CH2)]2 (2) (in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)
摘要翻译：一种聚合物制备方法，包括在由下式（2）表示的双核金属络合物的存在下使由下式（1）表示的化合物反应。 R4-nMHn（1）（式（1）中，R为一价有机基团，M为硅原子或锗原子，n为2或3.）[CpM（μ-CH 2）] 2 ）（式（2）中，Cp为环戊二烯基配体，M为选自Rh和Ir的金属原子，M'之间的键为双键。）

3. 发明授权

US09257273B2 Charged particle beam apparatus, thin film forming method, defect correction method and device forming method 有权
标题翻译：带电粒子束装置，薄膜形成方法，缺陷校正方法和器件形成方法
公开(公告)号：US09257273B2
公开(公告)日：2016-02-09
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/31 , H01L21/02 , H01J37/317 , C23C16/04 , C23C16/24 , C23C16/32 , C23C16/40 , C23C16/42 , C23C16/48 , C23C16/56 , H01L21/66 , H01L21/28 , H01L29/66
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

4. 发明申请

US20130224889A1 CHARGED PARTICLE BEAM APPARATUS, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FORMING METHOD 有权
标题翻译：充电颗粒光束装置，薄膜形成方法，缺陷校正方法和装置形成方法
公开(公告)号：US20130224889A1
公开(公告)日：2013-08-29
申请号：US13876274
申请日：2011-09-22
申请人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Yoshihiro Koyama , Anto Yasaka , Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/02
CPC分类号： H01L21/02263 , C23C16/045 , C23C16/24 , C23C16/325 , C23C16/401 , C23C16/42 , C23C16/486 , C23C16/487 , C23C16/56 , H01J37/3178 , H01L21/02532 , H01L21/0262 , H01L21/02631 , H01L21/28079 , H01L21/28211 , H01L22/20 , H01L29/66568 , H01L2924/0002 , H01L2924/00
摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
摘要翻译：提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

5. 发明申请

US20120301731A1 METHOD FOR FORMING CRYSTALLINE COBALT SILICIDE FILM 有权
标题翻译：形成结晶硅酸铜薄膜的方法
公开(公告)号：US20120301731A1
公开(公告)日：2012-11-29
申请号：US13518986
申请日：2010-12-22
申请人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： H01L21/3205 , H01B1/06
CPC分类号： H01L21/28518 , H01L21/28052 , H01L21/288 , H01L29/665
摘要： The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2 (1A) SimX2m (1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.
摘要翻译：本发明涉及一种形成结晶硅化钴膜的方法，包括以下步骤：将由下式（1A）或（1B）表示的化合物混合得到的组合物施加到由硅制成的表面上：SinX2n + 2（1A）SimX2m（1B）其中式（1A）和（1B）中的每个X是氢原子或卤素原子，n是1至10的整数，m是3至10的整数，或其与零价钴络合物的聚合物形成涂膜; 在550〜900℃下加热涂膜以形成由硅制成的表面上由结晶硅化钴构成的第一层和含有硅原子的第二层，氧原子，碳原子和钴原子在第一层上; 并去除二层膜的第二层。

6. 发明授权

US09653306B2 Method for forming crystalline cobalt silicide film 有权
公开(公告)号：US09653306B2
公开(公告)日：2017-05-16
申请号：US13518986
申请日：2010-12-22
申请人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
发明人： Tatsuya Shimoda , Yasuo Matsuki , Ryo Kawajiri
IPC分类号： B05D3/02 , H01L21/285 , H01L21/288 , H01L21/28 , H01L29/66
CPC分类号： H01L21/28518 , H01L21/28052 , H01L21/288 , H01L29/665
摘要： The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2 (1A) SimX2m (1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

7. 发明申请

US20110158886A1 POLYSILANE PRODUCTION PROCESS 审中-公开
标题翻译：多晶生产工艺
公开(公告)号：US20110158886A1
公开(公告)日：2011-06-30
申请号：US13003700
申请日：2009-07-09
申请人： Tatsuya Shimoda , Ryo Kawajiri , Kiyoshi Isobe , Hidetaka Nakai , Yasuo Matsuki
发明人： Tatsuya Shimoda , Ryo Kawajiri , Kiyoshi Isobe , Hidetaka Nakai , Yasuo Matsuki
IPC分类号： C01B33/04
CPC分类号： C08G77/60
摘要： A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). SijH2j (2) (in the formula (2), j is an integer of 3 to 10.) [CpM(μ-CH2)]2 (4) (in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)
摘要翻译：一种聚硅烷制造方法，其特征在于，在下述式（4）表示的双核金属络合物的存在下，使由下式（2）表示的环状硅烷化合物为代表的特定硅烷化合物反应。 Sij H 2j（2）（式（2）中，j为3〜10的整数。）[CpM（μ-CH 2）] 2（4）（式（4）中，Cp为环戊二烯基系配体， M是选自Rh和Ir的金属原子，M's之间的键是双键。）

8. 发明授权

US08673682B2 High order silane composition and method of manufacturing a film-coated substrate 有权
标题翻译：高级硅烷组合物及其制造方法
公开(公告)号：US08673682B2
公开(公告)日：2014-03-18
申请号：US13143854
申请日：2010-01-07
申请人： Tatsuya Shimoda , Yasuo Matsuki , Takashi Masuda
发明人： Tatsuya Shimoda , Yasuo Matsuki , Takashi Masuda
IPC分类号： H01L51/56
CPC分类号： H01L21/02628 , C01B33/029 , C01B33/04 , C01B33/12 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A composition containing a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. Method of manufacturing a film-coated substrate using the high order silane composition.
摘要翻译：含有高级硅烷化合物和溶剂的组合物，其中所述溶剂含有具有一个或两个双键且不存在烷基的环状烃仅由碳和氢组成，折射率为1.40〜1.51，特定的介电常数不超过3.0，分子量不大于180.使用高级硅烷组合物制造薄膜包衣基材的方法。

9. 发明申请

US20110318939A1 HIGH ORDER SILANE COMPOSITION AND METHOD OF MANUFACTURING A FILM-COATED SUBSTRATE 有权
标题翻译：高级硅烷组合物和制造薄膜基材的方法
公开(公告)号：US20110318939A1
公开(公告)日：2011-12-29
申请号：US13143854
申请日：2010-01-07
申请人： Tatsuya Shimoda , Yasuo Matsuki , Takashi Masuda
发明人： Tatsuya Shimoda , Yasuo Matsuki , Takashi Masuda
IPC分类号： H01L21/316 , C09D7/12
CPC分类号： H01L21/02628 , C01B33/029 , C01B33/04 , C01B33/12 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A composition comprising a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180.A high-quality film which is safe and has a desired film thickness can be formed from the high order silane composition of the present invention by a liquid-phase process.
摘要翻译：包含高级硅烷化合物和溶剂的组合物，其中所述溶剂含有具有一个或两个双键且不存在烷基的环状烃仅由碳和氢构成，折射率为1.40〜1.51，特定的介电常数不超过3.0，分子量不大于180.可以通过液相法由本发明的高级硅烷组合物形成安全且具有所需膜厚的高质量薄膜。

10. 发明授权

US08828555B2 Method for forming patterned conductive film 有权
标题翻译：形成图案导电膜的方法
公开(公告)号：US08828555B2
公开(公告)日：2014-09-09
申请号：US13575477
申请日：2011-01-26
申请人： Tatsuya Shimoda , Yasuo Matsuki , Zhongrong Shen
发明人： Tatsuya Shimoda , Yasuo Matsuki , Zhongrong Shen
IPC分类号： B23K35/00 , B05D5/12 , C23C18/10 , H05K3/18
CPC分类号： C23C18/1603 , C23C18/06 , C23C18/08 , C23C18/10 , C23C18/42 , C23C22/73 , H05K3/182 , H05K2203/0709 , H05K2203/1105 , Y10T428/12028 , Y10T428/12493 , Y10T428/1275 , Y10T428/24917
摘要： The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C. According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.
摘要翻译：本发明涉及一种形成图案化导电膜的方法，其包括以下步骤：将具有形成在其上的铂微晶粒子层的基板以胺化合物和氢化铝的配合物接触，在本发明中，提供一种图案化导电层的形成方法，其可以确保与基板的电接合，并且也可以简单地适用于各种电子器件而不需要一个巨大而沉重的设备。

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