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1. 发明授权

US07337423B2 Mask pattern generating method and mask pattern generating apparatus 失效
标题翻译：掩模图案生成方法和掩模图案生成装置
公开(公告)号：US07337423B2
公开(公告)日：2008-02-26
申请号：US10778337
申请日：2004-02-17
申请人： Minoru Yamagiwa , Tadashi Tanimoto , Akio Misaka , Reiko Hinogami
发明人： Minoru Yamagiwa , Tadashi Tanimoto , Akio Misaka , Reiko Hinogami
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Established is a mask pattern correcting technique for reducing the load to a mask CAD process and for ensuring the minimum dimension defined in an OPC process. A method comprises the steps of: measuring a line width of a mask pattern; extracting edges where the line width of the mask pattern is smaller than a predetermined dimension; generating a central geometrical object having a predetermined width relative to the center between the edges where the line width is smaller than the predetermined dimension; and replacing the portion of the mask pattern where the line width is smaller than the predetermined dimension with the central geometrical object. As a result, the mask pattern line width is changed into the predetermined with dimension of the central geometrical object. This reduces notably the number of geometrical object calculating steps that had been performed for each value of dimension on the basis of a correction table in the prior art, and thereby shortens the mask CAD processing time.
摘要翻译：建立了一种掩模图案校正技术，用于减少掩模CAD过程的负载并确保OPC过程中定义的最小尺寸。一种方法包括以下步骤：测量掩模图案的线宽; 提取掩模图案的线宽小于预定尺寸的边缘; 产生相对于所述线宽小于所述预定尺寸的边缘之间的中心具有预定宽度的中心几何物体; 并且用中心几何物体代替线宽小于预定尺寸的掩模图案的部分。结果，掩模图案线宽度变为具有中心几何对象的预定尺寸。这显着地减少了基于现有技术的校正表对每个维度值执行的几何对象计算步骤的数量，从而缩短了掩模CAD处理时间。

2. 发明授权

US08278014B2 Photomask and pattern formation method using the same 有权
标题翻译：光掩模和图案形成方法使用它
公开(公告)号：US08278014B2
公开(公告)日：2012-10-02
申请号：US13178256
申请日：2011-07-07
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
IPC分类号： G03F1/00 , G03F9/00 , G03F7/00
CPC分类号： G03F1/32 , G03F1/29
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译：光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口该半光屏蔽部分具有比第一尺寸更大的第二维度。在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。在第二开口周围的透明基板上形成遮光部。

3. 发明授权

US07771902B2 Photomask, fabrication method for the same and pattern formation method using the same 失效
标题翻译：光掩模，相同的制造方法和使用该掩模的图案形成方法
公开(公告)号：US07771902B2
公开(公告)日：2010-08-10
申请号：US11884451
申请日：2007-02-27
申请人： Akio Misaka
发明人： Akio Misaka
IPC分类号： G03F1/00 , H01L21/00
CPC分类号： G03F1/36 , G03F1/29
摘要： A mask pattern including, for example, a light-shielding portion 101 and a first transparent portion 104A surrounded with a semi-light-shielding portion 102 are provided on a transparent substrate 100. The mask pattern includes a first pattern region and a second pattern region opposing each other with the semi-light-shielding portion 102 and the first transparent portion 104A sandwiched therebetween.
摘要翻译：包括例如遮光部分101和由半光屏蔽部分102围绕的第一透明部分104A的掩模图案设置在透明基板100上。掩模图案包括第一图案区域和第二图案区域与半遮光部分102和夹在其间的第一透明部分104A相对。

4. 发明申请

US20060183035A1 Method for forming pattern using a photomask 失效
标题翻译：使用光掩模形成图案的方法
公开(公告)号：US20060183035A1
公开(公告)日：2006-08-17
申请号：US11402947
申请日：2006-04-13
申请人： Akio Misaka
发明人： Akio Misaka
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/29 , G03F1/32
摘要： A photomask has a semi-light-shielding portion having a light-shielding property and a light-transmitting portion surrounded by the semi-light-shielding portion, and a peripheral portion positioned in the periphery of the light-transmitting portion. The semi-light-shielding portion and the light-transmitting portion transmit exposure light in the same phase, whereas the peripheral portion transmits exposure light in a phase opposite to that of the light-transmitting portion.
摘要翻译：光掩模具有遮光性的半遮光部和被半光遮蔽部包围的透光部以及位于透光部的周缘的周边部。半光屏蔽部分和透光部分以相同的相位发射曝光光，而周边部分以与透光部分相反的相位透射曝光光。

5. 发明申请

US20060183033A1 Method for forming pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US20060183033A1
公开(公告)日：2006-08-17
申请号：US11402064
申请日：2006-04-12
申请人： Akio Misaka
发明人： Akio Misaka
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/32
摘要： A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.
摘要翻译：设置在透明基板2上的掩模图案包括透光部分4，该半遮光部分3以与透光部分4相同的相位透射曝光光;以及移相器5，其以相对相反的相位透射曝光光与透光部4的相反。半光遮蔽部分3具有允许曝光光部分透射的透射率。移相器5设置在掩模图案的区域中，透射通过移相器5的光可以抵消透过透光部分4和半透光部分3的一部分光。

6. 发明授权

US07060395B2 Photomask, method for forming the same,and method for designing mask pattern 失效
标题翻译：光掩模，其形成方法和设计掩模图案的方法
公开(公告)号：US07060395B2
公开(公告)日：2006-06-13
申请号：US10399762
申请日：2002-04-22
申请人： Akio Misaka
发明人： Akio Misaka
IPC分类号： G03F9/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/36 , G03F7/70125
摘要： A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 and 43 generate a phase difference of 180 degrees with respect to exposure light between the phase shifters and the transparent substrate 30. A first light intensity generated in a light-shielded image formation region corresponding to the mask pattern 40 on an exposed material by the exposure light transmitted through the phase shifters 42 and 43 is not more than four times a second light intensity generated in the light-shielded image formation region by the exposure light that is transmitted through the periphery of the mask pattern 40 on the transparent substrate 30 and goes into the back side of the mask pattern 40.
摘要翻译：在透明基板30上形成由包括由铬膜等构成的遮光膜构成的遮光部41和移相器42,43的掩模图案40.移相器42,43产生相位差相对于移相器和透明基板30之间的曝光光线为180度。在通过透射通过移相器的曝光光在曝光材料上对应于掩模图案40的遮光图像形成区域中产生的第一光强度 42和43不超过在透光基板30上通过掩模图案40的周边透射并进入透明基板30的背面的曝光的光在遮光图像形成区域中产生的第二光强度的四倍以下掩模图案40。

7. 发明授权

US06977133B2 Photomask and pattern forming method 失效
标题翻译：光掩模和图案形成方法
公开(公告)号：US06977133B2
公开(公告)日：2005-12-20
申请号：US10390948
申请日：2003-03-17
申请人： Taichi Koizumi , Akio Misaka
发明人： Taichi Koizumi , Akio Misaka
IPC分类号： G03F1/00 , G03F1/36 , G03F7/20 , G03C5/00
CPC分类号： G03F1/36 , G03F7/70441
摘要： A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 λ/(NA·K) of a distance from the neighboring side edge of the other line pattern, where λ is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.
摘要翻译：光掩模用于将掩模图案转印到半导体衬底上。掩模图案包括两个线图案彼此连接的连接点，其中一条线图案与另一条线图形正交以便形成T形，或两个线图案靠近每个位置的邻近部分另一个，其中一个线图案基本上与另一个线图案正交，从而形成T形。在接合部或接近部附近的线图案的侧边缘上形成小图案，以形成线条图案的宽部分。小图案提供在距离另一条线图案的相邻侧边缘的距离在0.79和1.8λ/（NA.K）之间的范围内，其中λ是曝光照明光的波长，NA是数字孔径所使用的透镜，K是转印缩小率。

8. 发明申请

US20110272815A1 SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME 有权
标题翻译：半导体器件及其布局设计方法
公开(公告)号：US20110272815A1
公开(公告)日：2011-11-10
申请号：US13013442
申请日：2011-01-25
申请人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
发明人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
IPC分类号： H01L23/528 , G06F17/50
CPC分类号： H01L23/528 , G06F17/50 , G06F17/5072 , G06F2217/12 , H01L23/522 , H01L2924/0002 , Y02P90/265 , H01L2924/00
摘要： A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.
摘要翻译：半导体器件包括：多个线特征，包括至少一个实际特征，其包括栅电极部分和至少一个虚拟特征。两个虚拟特征中的两个，并且插入在两个虚拟特征之间并且包括至少一个真实特征的线特征中的至少一个形成均匀间隔的并行运行线特征。平行运行线特征具有相同的宽度，并行运行线特征的线端部分基本齐平。线端部均匀化虚拟特征形成在平行运行线特征的线端部的延伸部上。线端部均匀化虚拟特征包括多个线性特征，每个线性特征具有与每个线特征相同的宽度，并以等于每对相邻线特征之间的间隔的间隔间隔开。

9. 发明授权

US07524620B2 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US07524620B2
公开(公告)日：2009-04-28
申请号：US11601766
申请日：2006-11-20
申请人： Akio Misaka
发明人： Akio Misaka
IPC分类号： G03C5/00
CPC分类号： G03F1/36 , G03F1/26 , G03F1/32
摘要： A mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure. The main pattern is made from a shielding portion, a phase shifter or a combination of a semi-shielding portion or a shielding portion and a phase shifter. The auxiliary pattern is made from a shielding portion or a semi-shielding portion. The auxiliary pattern is disposed in a position away from the main pattern by a distance M×(λ/(2×sin φ)) or M×((λ/(2×sin φ))+(λ/(NA+sin φ))), wherein λ indicates a wavelength of the exposing light, M and NA indicate magnification and numerical aperture of a reduction projection optical system of an aligner and φ indicates an oblique incident angle.
摘要翻译：掩模图案包括通过曝光传送的主图案和衍射曝光并且不通过曝光转印的辅助图案。主图案由屏蔽部分，移相器或半屏蔽部分或屏蔽部分和移相器的组合构成。辅助图案由屏蔽部分或半屏蔽部分制成。辅助图案设置在远离主图案的距离Mx（λ/（2xsin phi））或Mx（（λ/（2xsin phi））+（λ/（NA +sinφ）））的位置，其中 λ表示曝光光的波长，M和NA表示对准器的缩小投影光学系统的倍率和数值孔径，phi表示倾斜入射角。

10. 发明申请

US20090061330A1 PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME 有权
标题翻译：使用该图像的光刻胶和图案形成方法
公开(公告)号：US20090061330A1
公开(公告)日：2009-03-05
申请号：US12200478
申请日：2008-08-28
申请人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
发明人： Shigeo Irie , Akio Misaka , Yuji Nonami , Tetsuya Nakamura , Chika Harada
IPC分类号： G03F1/00 , G03F7/22
CPC分类号： G03F1/32 , G03F1/29
摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.
摘要翻译：光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口该半光屏蔽部分具有比第一尺寸更大的第二维度。在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。在第二开口周围的透明基板上形成遮光部。

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