专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07337423B2 Mask pattern generating method and mask pattern generating apparatus 失效
标题翻译：掩模图案生成方法和掩模图案生成装置
公开(公告)号：US07337423B2
公开(公告)日：2008-02-26
申请号：US10778337
申请日：2004-02-17
申请人： Minoru Yamagiwa , Tadashi Tanimoto , Akio Misaka , Reiko Hinogami
发明人： Minoru Yamagiwa , Tadashi Tanimoto , Akio Misaka , Reiko Hinogami
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Established is a mask pattern correcting technique for reducing the load to a mask CAD process and for ensuring the minimum dimension defined in an OPC process. A method comprises the steps of: measuring a line width of a mask pattern; extracting edges where the line width of the mask pattern is smaller than a predetermined dimension; generating a central geometrical object having a predetermined width relative to the center between the edges where the line width is smaller than the predetermined dimension; and replacing the portion of the mask pattern where the line width is smaller than the predetermined dimension with the central geometrical object. As a result, the mask pattern line width is changed into the predetermined with dimension of the central geometrical object. This reduces notably the number of geometrical object calculating steps that had been performed for each value of dimension on the basis of a correction table in the prior art, and thereby shortens the mask CAD processing time.
摘要翻译：建立了一种掩模图案校正技术，用于减少掩模CAD过程的负载并确保OPC过程中定义的最小尺寸。一种方法包括以下步骤：测量掩模图案的线宽; 提取掩模图案的线宽小于预定尺寸的边缘; 产生相对于所述线宽小于所述预定尺寸的边缘之间的中心具有预定宽度的中心几何物体; 并且用中心几何物体代替线宽小于预定尺寸的掩模图案的部分。结果，掩模图案线宽度变为具有中心几何对象的预定尺寸。这显着地减少了基于现有技术的校正表对每个维度值执行的几何对象计算步骤的数量，从而缩短了掩模CAD处理时间。

2. 发明授权

US06562710B2 Semiconductor device and method for fabricating the same 失效
公开(公告)号：US06562710B2
公开(公告)日：2003-05-13
申请号：US09971734
申请日：2001-10-09
申请人： Hideo Nakagawa , Reiko Hinogami , Eiji Tamaoka
发明人： Hideo Nakagawa , Reiko Hinogami , Eiji Tamaoka
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/7682 , H01L21/76877 , H01L21/76885 , H01L23/5222 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： After depositing a metal film on an insulating film on a semiconductor substrate, a first interlayer insulating film is formed on the metal film. After forming first plug openings in the first interlayer insulating film by etching the first interlayer insulating film with a first mask pattern used as a mask, first connection plugs are formed by filling a first conducting film in the first plug openings. A second interlayer insulating film is formed on the first interlayer insulating film. After forming second plug openings respectively on the first connection plugs in the second interlayer insulating film by etching the second interlayer insulating film with a second mask pattern used as a mask, second connection plugs are formed by filling a second conducting film in the second plug openings. The metal film is etched by using at least the first connection plugs and the second connection plugs as a mask so as to form metal interconnects, and then, a third interlayer insulating film is formed on the metal interconnects so as to form an air gap between the metal interconnects.

3. 发明授权

US06514647B1 Photomask, resist pattern formation method, method of determining alignment accuracy and method of fabricating semiconductor device 失效
标题翻译：光掩模，抗蚀剂图案形成方法，确定取向精度的方法和制造半导体器件的方法
公开(公告)号：US06514647B1
公开(公告)日：2003-02-04
申请号：US09615744
申请日：2000-07-13
申请人： Reiko Hinogami , Hisashi Watanabe , Hideo Nakagawa
发明人： Reiko Hinogami , Hisashi Watanabe , Hideo Nakagawa
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F7/70633
摘要： A photomask of this invention includes a main pattern part for forming a main pattern in a resist film and an alignment mark part for forming, in the resist film, an alignment accuracy determining mark not penetrating the resist film in section after development of the resist film.
摘要翻译：本发明的光掩模包括用于在抗蚀剂膜中形成主图案的主图案部分和用于在抗蚀剂膜中形成在抗蚀剂膜显影之后的部分中不穿透抗蚀剂膜的对准精度确定标记的对准标记部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式