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1. 发明申请

US20110272815A1 SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME 有权
标题翻译：半导体器件及其布局设计方法
公开(公告)号：US20110272815A1
公开(公告)日：2011-11-10
申请号：US13013442
申请日：2011-01-25
申请人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
发明人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
IPC分类号： H01L23/528 , G06F17/50
CPC分类号： H01L23/528 , G06F17/50 , G06F17/5072 , G06F2217/12 , H01L23/522 , H01L2924/0002 , Y02P90/265 , H01L2924/00
摘要： A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.
摘要翻译：半导体器件包括：多个线特征，包括至少一个实际特征，其包括栅电极部分和至少一个虚拟特征。两个虚拟特征中的两个，并且插入在两个虚拟特征之间并且包括至少一个真实特征的线特征中的至少一个形成均匀间隔的并行运行线特征。平行运行线特征具有相同的宽度，并行运行线特征的线端部分基本齐平。线端部均匀化虚拟特征形成在平行运行线特征的线端部的延伸部上。线端部均匀化虚拟特征包括多个线性特征，每个线性特征具有与每个线特征相同的宽度，并以等于每对相邻线特征之间的间隔的间隔间隔开。

2. 发明授权

US08392856B2 Semiconductor device and layout design method for the same 有权
标题翻译：半导体器件和布局设计方法相同
公开(公告)号：US08392856B2
公开(公告)日：2013-03-05
申请号：US13013442
申请日：2011-01-25
申请人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
发明人： Akio Misaka , Yasuko Tabata , Hideyuki Arai , Takayuki Yamada
IPC分类号： G06F17/50
CPC分类号： H01L23/528 , G06F17/50 , G06F17/5072 , G06F2217/12 , H01L23/522 , H01L2924/0002 , Y02P90/265 , H01L2924/00
摘要： A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.
摘要翻译：半导体器件包括：多个线特征，包括至少一个实际特征，其包括栅电极部分和至少一个虚拟特征。两个虚拟特征中的两个，并且插入在两个虚拟特征之间并且包括至少一个真实特征的线特征中的至少一个形成均匀间隔的并行运行线特征。平行运行线特征具有相同的宽度，并行运行线特征的线端部分基本齐平。线端部均匀化虚拟特征形成在平行运行线特征的线端部的延伸部上。线端部均匀化虚拟特征包括多个线性特征，每个线性特征具有与每个线特征相同的宽度，并以等于每对相邻线特征之间的间隔间隔。

3. 发明申请

US20110169100A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110169100A1
公开(公告)日：2011-07-14
申请号：US13005085
申请日：2011-01-12
申请人： Hiroji SHIMIZU , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
发明人： Hiroji SHIMIZU , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
IPC分类号： H01L29/78 , H01L21/4763
CPC分类号： H01L27/0629 , H01L28/20
摘要： A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.
摘要翻译：一种半导体器件包括：第一导电类型的第一MIS晶体管，具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区，第一栅绝缘膜，形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件，其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。第一高介电膜和第二高电介质膜包括相同的高介电材料，第一高电介质膜包括第一调节金属，但第二高电介质膜不包括第一调节金属。

4. 发明授权

US08558321B2 Semiconductor device having gate insulating film including high dielectric material 有权
标题翻译：具有包括高电介质材料的栅极绝缘膜的半导体器件
公开(公告)号：US08558321B2
公开(公告)日：2013-10-15
申请号：US13005085
申请日：2011-01-12
申请人： Hiroji Shimizu , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
发明人： Hiroji Shimizu , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
IPC分类号： H01L21/40
CPC分类号： H01L27/0629 , H01L28/20
摘要： A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.
摘要翻译：一种半导体器件包括：第一导电类型的第一MIS晶体管，具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区，第一栅绝缘膜，形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件，其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。第一高介电膜和第二高电介质膜包括相同的高介电材料，第一高电介质膜包括第一调节金属，但第二高电介质膜不包括第一调节金属。

5. 发明授权

US09359390B2 Activated carbon and use therefor 有权
标题翻译：活性炭用于此
公开(公告)号：US09359390B2
公开(公告)日：2016-06-07
申请号：US13637250
申请日：2011-03-24
申请人： Mitsunori Hitomi , Takayuki Yoshikawa , Takayuki Yamada
发明人： Mitsunori Hitomi , Takayuki Yoshikawa , Takayuki Yamada
IPC分类号： C07F9/38 , B01J21/18 , C01B31/08 , B01J35/00
CPC分类号： C07F9/3813 , B01J21/18 , B01J35/002 , C01B32/30 , C07F9/3808
摘要： An activated carbon having a high catalytic activity as an oxidation catalyst or a decomposition catalyst, and use therefor are provided.The activated carbon has (a) an oxygen content in a range from 1.40 to 4.30% by mass, (b) a nitrogen content in a range from 0.90 to 2.30% by mass, (c) a sulfur content in a range from 0.50 to 1.20% by mass, and (d) a hydrogen content in a range from 0.40 to 0.65% by mass. The activated carbon may have at least one characteristic of (e) an amount of an acidic surface functional group of 0.10 to 0.36 meq/g, (f) an amount of a basic surface functional group of 0.50 to 1.30 meq/g, and (g) a benzene adsorption capacity of 25 to 50%. The activated carbon catalyzes an oxidation reaction of N-(phosphonomethyl)iminodiacetic acid with a peroxide (e.g., hydrogen peroxide) and achieves an efficient production of N-(phosphonomethyl)glycine even after repetitive use. The activated carbon also efficiently decomposes a chloramine.
摘要翻译：提供了作为氧化催化剂或分解催化剂具有高催化活性的活性炭及其用途。活性炭具有（a）1.40〜4.30质量％的氧含量，（b）氮含量在0.90〜2.30质量％的范围内，（c）硫含量在0.50〜 1.20质量％，（d）氢含量在0.40〜0.65质量％的范围内。活性炭可以具有以下特征：（e）酸性表面官能团的量为0.10〜0.36meq / g，（f）碱性表面官能团的量为0.50〜1.30meq / g，（ g）苯吸附量为25〜50％。活性炭催化N-（膦酰基甲基）亚氨基二乙酸与过氧化物（例如过氧化氢）的氧化反应，甚至在重复使用后即可有效生产N-（膦酰基甲基）甘氨酸。活性炭也有效地分解氯胺。

6. 发明授权

US08740290B2 Structure for side section of vehicle body 有权
标题翻译：车体侧面结构
公开(公告)号：US08740290B2
公开(公告)日：2014-06-03
申请号：US13576231
申请日：2010-12-24
申请人： Yusuke Takayama , Hitoshi Mizohata , Takayuki Yamada , Kazunori Hida , Yasunori Watanabe
发明人： Yusuke Takayama , Hitoshi Mizohata , Takayuki Yamada , Kazunori Hida , Yasunori Watanabe
IPC分类号： B62D25/02 , B62D25/04
CPC分类号： B62D25/02 , B62D25/025 , B62D25/04 , B62D25/2081 , B62D29/007
摘要： A vehicle body side part structure having high strength against a load in a frontal collision and a load in a side collision. A side panel outer member (14) is provided with a front pillar lower section (31) which is formed from a high-tensile steel sheet, a front pillar upper section (37a) which is formed from a normal steel sheet, and a reinforcement member (38) which is disposed along the front pillar upper section. The upper end (31a) of the front pillar lower section (31) is joined to the inner surface of the lower end (37c) of the front pillar upper section. The front end (38a) of the reinforcement member (38) is joined to the inner surface of the upper end (31a) of the front pillar lower section.
摘要翻译：一种车身侧部结构，其具有相对于前方碰撞中的载荷和侧面碰撞中的载荷的高强度。侧板外部构件（14）设置有由高强度钢板形成的前柱下部（31），由普通钢板形成的前柱上部（37a）和钢筋构件（38），其沿着前柱上部设置。前柱下部（31）的上端（31a）与前柱上部的下端（37c）的内表面接合。加强构件（38）的前端（38a）与前柱下部的上端（31a）的内表面接合。

7. 发明授权

US08679336B2 Microchannel device, separation apparatus, and separation method 有权
标题翻译：微通道装置，分离装置和分离方法
公开(公告)号：US08679336B2
公开(公告)日：2014-03-25
申请号：US12422528
申请日：2009-04-13
申请人： Kazuya Hongo , Takayuki Yamada , Seiichi Takagi , Hiroshi Kojima , Masaki Hirota , Kazuaki Tabata , Tetsuo Ohta
发明人： Kazuya Hongo , Takayuki Yamada , Seiichi Takagi , Hiroshi Kojima , Masaki Hirota , Kazuaki Tabata , Tetsuo Ohta
IPC分类号： B01D63/08 , B01D61/18 , G05B7/04
CPC分类号： B01D63/082 , B01D69/10 , B01D71/022 , B01D2313/086 , B01D2325/021 , B01L3/502753 , B33Y80/00 , Y10T137/2224
摘要： A microchannel device is provided, the microchannel device containing a microfluidic channel including a sub fluidic channel in which at least one filtration diaphragm is provided, wherein the microfluidic channel has at least a supply port, a first discharge port and a second discharge port, the supply port and the first discharge port are connected through the filtration diaphragm, the supply port and the second discharge port are connected without the filtration diaphragm, and the filtration diaphragm is provided parallel to a fluidic channel direction of the microfluidic channel.
摘要翻译：提供了一种微通道装置，所述微通道装置包含微流体通道，所述微流体通道包括其中设置有至少一个过滤隔膜的副流体通道，其中所述微流体通道至少具有供给口，第一排出口和第二排出口，供给口和第一排出口通过过滤膜连接，供给口和第二排出口连接而不需要过滤隔膜，并且过滤隔膜平行于微流体通道的流体通道方向设置。

8. 发明授权

US08507145B2 Fuel cell and method of producing the fuel cell 有权
标题翻译：燃料电池及燃料电池的制造方法
公开(公告)号：US08507145B2
公开(公告)日：2013-08-13
申请号：US12191023
申请日：2008-08-13
申请人： Mari Maruyama , Takayuki Yamada
发明人： Mari Maruyama , Takayuki Yamada
IPC分类号： H01M2/38
CPC分类号： H01M8/0206 , H01M8/0228 , H01M8/0247 , H01M8/0258 , H01M8/241 , H01M8/2425 , H01M8/2457 , H01M8/2483 , H01M8/249 , H01M2008/1293 , Y10T29/49115
摘要： A fuel cell includes an electrolyte electrode assembly and separators. A first protection layer is formed on a surface of an anode of the electrolyte electrode assembly facing the separator for preventing the anode from being exposed to an exhaust gas. A second protection layer is formed on a surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas. The first protection layer and the second protection layer tightly contact each other in part so as to form a space as a fuel gas channel for supplying a fuel gas to the anode. Alternatively, a protection layer is formed on an end surface of the separator facing the anode for preventing the separator from being exposed to the exhaust gas.
摘要翻译：燃料电池包括电解质电极组件和分离器。第一保护层形成在面向隔板的电解质电极组件的阳极的表面上，以防止阳极暴露于废气。在面向阳极的隔板的表面上形成第二保护层，以防止隔板暴露于废气。第一保护层和第二保护层部分地彼此紧密接触，以便形成用于将燃料气体供应到阳极的燃料气体通道的空间。或者，在面向阳极的隔板的端面上形成保护层，以防止隔板暴露于废气。

9. 发明授权

US08505664B2 Snowmobile 有权
标题翻译：雪地车
公开(公告)号：US08505664B2
公开(公告)日：2013-08-13
申请号：US13585872
申请日：2012-08-15
申请人： Tokinari Nagao , Atsushi Sawabuchi , Takashi Ashida , Kazuhiro Ishizawa , Takayuki Yamada
发明人： Tokinari Nagao , Atsushi Sawabuchi , Takashi Ashida , Kazuhiro Ishizawa , Takayuki Yamada
IPC分类号： B62M29/00
CPC分类号： B62M27/02
摘要： A snowmobile includes a throttle motor that is protected from brake dust. The snowmobile includes a snowmobile body including an engine room therein, an engine disposed inside the engine room, brake equipment disposed inside the engine room, a throttle valve arranged to adjust intake air supplied to the engine, and a throttle motor which is disposed at a more forward position than the brake equipment inside the engine room and arranged to drive the throttle valve.
摘要翻译：雪地车包括防止制动器灰尘的节气门马达。雪地车包括其中包括发动机室的雪地车身，设置在发动机室内部的发动机，设置在发动机室内部的制动装置，设置成调节供给发动机的进气的节流阀和设置在发动机室内的节流马达，比起发动机室内的制动装置更前进的位置，并且设置成驱动节流阀。

10. 发明授权

US08476680B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08476680B2
公开(公告)日：2013-07-02
申请号：US13029556
申请日：2011-02-17
申请人： Takayuki Yamada
发明人： Takayuki Yamada
IPC分类号： H01L29/76
CPC分类号： H01L21/76897 , H01L29/665 , H01L29/6653 , H01L29/6656
摘要： A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
摘要翻译：半导体器件包括：半导体衬底; 形成在半导体衬底上的栅电极，其间插入有栅极绝缘膜; 形成在所述栅电极的侧壁上的侧壁间隔物; 源极/漏极区域形成在半导体衬底的相对部分中，栅电极和侧壁间隔物插入其间; 以及覆盖所述栅电极，所述侧壁间隔物和所述半导体衬底的上表面的应力施加绝缘膜。侧壁间隔件的上部的栅长方向厚度至少大于其中间部分的栅极长度方向厚度。

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