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    • 7. 发明授权
    • Reflective exposure mask, and method for producing and using the same
    • 反射曝光掩模及其制造和使用方法
    • US07413831B2
    • 2008-08-19
    • US10503570
    • 2003-02-25
    • Minoru Sugawara
    • Minoru Sugawara
    • G03F1/14G03F7/20G21K1/06
    • G03F1/22B82Y10/00B82Y40/00G03F1/24
    • When producing an exposure mask including a stack of reflective layers for reflecting extreme ultraviolet light, an absorber film for covering a light reflection plane of the stack of reflective layers with a predetermined pattern, and a buffer film interposed therebetween, the swing effect and the bulk effect that occur on a transferred portion of the predetermined pattern are specified in accordance with characteristic values of forming materials of the absorber film and the buffer film and optical conditions when exposing, and a forming film thickness of the absorber film is decided in consideration of the specified swing effect and the specified bulk effect so that the line width variation of the pattern and/or pattern shift of the pattern are at their minimum values. As a result, even for an exposure mask capable of dealing with extreme ultraviolet light, the line width variation and pattern shift after a wafer is exposed are minimized, and therefore it is possible to realize miniaturization of a transferred image appropriately.
    • 当产生包括用于反射极紫外光的反射层堆叠的曝光掩模时,用于以预定图案覆盖反射层堆叠的光反射平面的吸收膜和夹在其间的缓冲膜,摆动效应和体积 根据吸收膜和缓冲膜的形成材料的特性值和曝光时的光学条件来规定在预定图案的转印部分上发生的效果,并且考虑到吸收膜的形成膜厚度 指定的摆动效果和规定的体积效应,使得图案的图案和/或图案偏移的线宽变化为其最小值。 结果,即使对于能够处理极紫外光的曝光掩模,即使在使晶片露出之后的线宽变化和图案偏移也被最小化,因此可以适当地实现转印图像的小型化。
    • 8. 发明授权
    • Semiconductor-integrated circuit utilizing magnetoresistive effect elements
    • 采用磁阻效应元件的半导体集成电路
    • US07274207B2
    • 2007-09-25
    • US10477115
    • 2003-04-03
    • Minoru SugawaraMakoto Motoyoshi
    • Minoru SugawaraMakoto Motoyoshi
    • H03K19/173
    • H01L27/228H01L27/0207H01L27/105H01L27/10897H01L27/14601H01L27/24H01L2924/0002H01L2924/00
    • A semiconductor integrated circuit device has a plurality of circuit elements, a plurality of connection elements each of which becomes a conductive state or a nonconductive state, interconnects for supplying control signals for placing the connection elements in the conductive state or the nonconductive state, and a plurality of circuit selection switching elements, wherein said circuit selection switching elements are driven in response to the circuit configuration instruction signal, control signals are output from the circuit selection switching elements. As the connection elements, preferably use is made of magnetoresistance effect elements or resistance control elements which become the conductive state or the nonconductive state in accordance with application of a magnetic field. As the circuit elements, use can be made of magnetoresistance effect elements or resistance control elements.
    • 半导体集成电路器件具有多个电路元件,多个连接元件各自成为导通状态或非导通状态,用于提供用于将连接元件置于导通状态或非导通状态的控制信号的互连,以及 多个电路选择开关元件,其中响应于电路配置指令信号驱动所述电路选择开关元件,控制信号从电路选择开关元件输出。 作为连接元件,优选使用根据磁场的施加而成为​​导电状态或非导通状态的磁阻效应元件或电阻控制元件。 作为电路元件,可以使用磁阻效应元件或电阻控制元件。