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1. 发明授权

US08409895B2 Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer 有权
标题翻译：基于氮化镓的LED制造，采用PVD形成的氮化铝缓冲层
公开(公告)号：US08409895B2
公开(公告)日：2013-04-02
申请号：US13036273
申请日：2011-02-28
申请人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
发明人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
IPC分类号： H01L33/005
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译：描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

2. 发明申请

US20120156819A1 GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER 有权
标题翻译：基于氮化镓的LED制造与PVD成型的氮化铝缓冲层
公开(公告)号：US20120156819A1
公开(公告)日：2012-06-21
申请号：US13036273
申请日：2011-02-28
申请人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
发明人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
IPC分类号： H01L33/06 , H01L21/203 , C23C16/56 , C30B25/08 , C23C16/34 , C23C16/44
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译：描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

3. 发明申请

US20160293798A1 PVD BUFFER LAYERS FOR LED FABRICATION 审中-公开
公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L33/12 , H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

4. 发明申请

US20130285065A1 PVD BUFFER LAYERS FOR LED FABRICATION 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

5. 发明申请

US20130174781A1 GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER 审中-公开
标题翻译：基于氮化镓的LED制造与PVD成型的氮化铝缓冲层
公开(公告)号：US20130174781A1
公开(公告)日：2013-07-11
申请号：US13782935
申请日：2013-03-01
申请人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
发明人： Mingwei Zhu , Vivek Agrawal , Nag B. Patibandla , Omkaram Nalamasu
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
摘要翻译：描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

6. 发明授权

US09396933B2 PVD buffer layers for LED fabrication 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US09396933B2
公开(公告)日：2016-07-19
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205 , H01L33/00 , C30B23/02 , C30B29/40 , H01L33/12
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

7. 发明申请

US20110315186A1 Method of manufacturing thin crystalline silicon solar cells using recrystallization 审中-公开
标题翻译：使用重结晶制造薄晶体硅太阳能电池的方法
公开(公告)号：US20110315186A1
公开(公告)日：2011-12-29
申请号：US13106728
申请日：2011-05-12
申请人： James M. Gee , Nag B. Patibandla , Kaushal K. Singh , Omkaram Nalamasu
发明人： James M. Gee , Nag B. Patibandla , Kaushal K. Singh , Omkaram Nalamasu
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/18 , H01L31/0236 , H01L31/042 , H01L31/05
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention provide a thin single crystalline silicon film solar cell and methods of forming the same. The method includes forming a thin single crystalline silicon layer on a silicon growth substrate, followed by forming front or rear solar cell structures on and/or in the thin single crystalline silicon film. The method also includes attaching the thin single crystalline silicon film to a mechanical carrier and then separating the growth substrate from the thin single crystalline silicon film along a cleavage plane formed between the growth substrate and the thin single crystalline silicon film. Front or rear solar cell structures are then formed on and/or in the thin single crystalline silicon film opposite the mechanical carrier to complete formation of the solar cell.
摘要翻译：本发明的实施例提供一种薄单晶硅膜太阳能电池及其形成方法。该方法包括在硅生长衬底上形成薄的单晶硅层，随后在薄的单晶硅膜上和/或上形成前或后太阳能电池结构。该方法还包括将薄单晶硅膜附着到机械载体上，然后沿生长衬底和薄单晶硅膜之间形成的解理平面从薄单晶硅膜分离生长衬底。然后在与机械载体相对的薄单晶硅膜上和/或上形成正面或背面的太阳能电池结构，以完成太阳能电池的形成。

8. 发明授权

US08603195B2 3D approach on battery and supercapitor fabrication by initiation chemical vapor deposition techniques 有权
标题翻译：通过引发化学气相沉积技术的电池和超级电容器制造的3D方法
公开(公告)号：US08603195B2
公开(公告)日：2013-12-10
申请号：US12858531
申请日：2010-08-18
申请人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
发明人： Victor L. Pushparaj , Pravin K. Narwankar , Omkaram Nalamasu
IPC分类号： H01M4/13 , H01M4/58 , H01M4/60 , H01M4/82 , H01M6/12 , H01M6/46 , B05D5/12
CPC分类号： H01M4/661 , H01G9/0029 , H01G9/0032 , H01G9/155 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525 , H01M10/0565 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.
摘要翻译：提供了形成储能装置的方法和装置。在一个实施例中，提供了一种生产能量存储装置的方法。该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露，使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

9. 发明申请

US20120322011A1 METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES 有权
标题翻译：用于执行多个光电层发展和蚀刻过程的方法和装置
公开(公告)号：US20120322011A1
公开(公告)日：2012-12-20
申请号：US13455784
申请日：2012-04-25
申请人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
发明人： Banqiu Wu , Ajay Kumar , Kartik Ramaswamy , Omkaram Nalamasu
IPC分类号： G03F7/36
CPC分类号： G03F7/36 , G03F7/40
摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.
摘要翻译：本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物，通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

10. 发明申请

US20120218621A1 MATERIALS AND DEVICE STACK FOR MARKET VIABLE ELECTROCHROMIC DEVICES 有权
标题翻译：市场上可见的电致发光器件的材料和器件堆叠
公开(公告)号：US20120218621A1
公开(公告)日：2012-08-30
申请号：US13501994
申请日：2010-10-22
申请人： Byung Sung Leo Kwak , Kaushal K. Singh , Joseph G. Gordon, II , Omkaram Nalamasu
发明人： Byung Sung Leo Kwak , Kaushal K. Singh , Joseph G. Gordon, II , Omkaram Nalamasu
IPC分类号： G02F1/153 , C23C16/453 , H05H1/24
CPC分类号： G02F1/1523 , C23C14/08 , C23C14/34 , G02F1/1525 , G02F2202/06 , Y10S359/90
摘要： The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.
摘要翻译：本发明一般涉及电致变色（EC）装置，例如用于电致变色窗（ECW））及其制造。 EC装置可以包括透明基板; 第一透明导电层; 掺杂着色层，其中着色层掺杂剂为着色层中的原子排列提供结构稳定性; 电解质层; 在所述电解质层上的掺杂阳极层，其中所述阳极层掺杂剂在所述掺杂阳极层中提供增加的导电性; 和第二透明导电层。制造电致变色器件的方法可以包括依次沉积在第一透明导电层，掺杂着色层，电解质层，掺杂阳极层和第二透明导电层的衬底上，其中至少一个掺杂着色层，电解质层和掺杂阳极层使用组合等离子体沉积工艺溅射沉积。

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