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1. 发明授权

US06632726B2 Film formation method and film formation apparatus 失效
标题翻译：成膜方法和成膜装置
公开(公告)号：US06632726B2
公开(公告)日：2003-10-14
申请号：US09940619
申请日：2001-08-29
申请人： Michio Aruga , Atsushi Tabata
发明人： Michio Aruga , Atsushi Tabata
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/401 , C23C16/507 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31612
摘要： To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O2 gas and SiH4 gas are introduced into the processing chamber. Bias RF power is then applied to a support member to cause permeation of a wafer W by the plasma. At the end of the film formation, the application of the bias RF power to the support member is stopped while the O2 gas and the SiH4 gas are kept introduced into the processing chamber. After that, the introduction of the SiH4 gas is stopped, and the introduction of the O2 gas is also stopped. Then, the application of the source RF power to the coil is stopped. This can reduce plasma damage to the substrate to be processed.
摘要翻译：为了进行成膜处理，将源RF功率施加到线圈以在处理室中产生等离子体。随后，将O 2气体和SiH 4 气体引入处理室。然后将偏压RF功率施加到支撑构件以使晶片W渗透等离子体。在成膜结束时，停止向支撑构件施加偏压RF功率，而在O PDAT> 2 气体和SiH 4 < / SB> 气体被引入处理室。之后，停止引入SiH 4 气体，并且也停止引入O 2 。然后，停止向线圈施加源RF功率。这可以减少待处理基板的等离子体损伤

2. 发明授权

US07036453B2 Apparatus for reducing plasma charge damage for plasma processes 失效
标题翻译：用于降低等离子体工艺的等离子体电荷损伤的装置
公开(公告)号：US07036453B2
公开(公告)日：2006-05-02
申请号：US10658350
申请日：2003-09-08
申请人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
发明人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/455
摘要： A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
摘要翻译：提供了一种用于在处理室中的衬底上沉积薄膜以降低等离子体电荷损伤的发生率的方法。含有适于形成等离子体的前体气体的工艺气体流入处理室，并且从处理气体产生等离子体以将薄膜沉积在基板上。前体气体流入处理室，使得薄膜比衬底的边缘更快地沉积在衬底的中心。

3. 发明授权

US05997950A Substrate having uniform tungsten silicide film and method of manufacture 失效
标题翻译：具有均匀的硅化钨膜的基板及其制造方法
公开(公告)号：US05997950A
公开(公告)日：1999-12-07
申请号：US863676
申请日：1997-05-27
申请人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Klaus-Dieter Rinnen
发明人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Klaus-Dieter Rinnen
IPC分类号： C23C16/42
CPC分类号： C23C16/45561 , C23C16/42
摘要： A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.
摘要翻译：从预混合的沉积气体混合物将硅化钨膜沉积在衬底上，包括：（i）硅源气体，例如SiCl 2 H 2和（ii）钨源气体，例如WF 6。在初始沉积阶段期间使用接种气体，例如硅烷，以在基底上沉积基本上均匀的界面WSix层，使得WSix层的钨与硅的比例通过WSix膜的厚度基本上是均匀的。还描述了用于执行该处理的装置。

4. 发明授权

US5779848A Corrosion-resistant aluminum nitride coating for a semiconductor chamber window 失效
标题翻译：用于半导体室窗的耐腐蚀氮化铝涂层
公开(公告)号：US5779848A
公开(公告)日：1998-07-14
申请号：US781473
申请日：1997-01-10
申请人： Michio Aruga
发明人： Michio Aruga
IPC分类号： H05H1/46 , C01B21/072 , C23C16/44 , C23C16/48 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： C23C16/488 , Y10S156/914
摘要： An improved integrated circuit processing apparatus is disclosed wherein a protective coating of aluminum nitride (AlN), on the inner surface of a quartz (SiO.sub.2) window in the wall of the integrated circuit processing apparatus provides an enhanced resistance to the corrosive effects of halogen-containing reagents, particularly fluorine-containing gases, on the protected inner surface of the quartz window. Formation of an AlN coating having a minimum thickness of about 1 micron up to a maximum thickness of about 15 microns with a coating uniformity of .+-.15% of the average coating thickness, provides the desired protection of the inner surface of the quartz window from corrosive attack by fluorine-containing gases, such as NF.sub.3, SF.sub.6, and fluorine-containing hydrocarbons, e.g., C.sub.2 F.sub.6.
摘要翻译：公开了一种改进的集成电路处理装置，其中在集成电路处理装置的壁中的石英（SiO 2）窗的内表面上的氮化铝（AlN）的保护涂层提供了增强的耐卤素腐蚀性的腐蚀作用，在石英窗的被保护的内表面上含有试剂，特别是含氟气体。形成最小厚度为约1微米至最大厚度约15微米的AlN涂层，涂层均匀度为平均涂层厚度的+/- 15％，为石英窗的内表面提供了期望的保护来自含氟气体如NF3，SF6和含氟烃（如C2F6）的腐蚀性侵蚀。

5. 发明授权

US6090706A Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein 失效
标题翻译：在将钨硅化物涂层沉积在其上的活性基底上之前处理沉积室的预处理过程
公开(公告)号：US6090706A
公开(公告)日：2000-07-18
申请号：US140818
申请日：1998-08-26
申请人： Susan Weiher Telford , Michio Aruga , Mei Chang
发明人： Susan Weiher Telford , Michio Aruga , Mei Chang
IPC分类号： C23C16/42 , C23C16/44 , H01L21/44
CPC分类号： C23C16/4404 , C23C16/42 , Y10S438/906
摘要： A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.
摘要翻译：公开了一种用于预处理硅化钨沉积室的表面的方法，在先前的清洁腔室之后，以及在室中的有源衬底上沉积钨硅化物之前，首先包括用气态硅源处理室表面，作为硅烷和含钨气体，例如WF 6，以在室表面上形成硅烷基硅化钨的第一次沉积。在优选的实施方案中，预处理方法还包括随后在第二步中用含钨气体（例如WF 6）和氯取代的硅烷如二氯硅烷（SiH 2 Cl 2），一氯硅烷（SiCl 2） SiHCl 3）或三氯硅烷（SiHCl 3），以在淀积室中的活性基底上沉积钨硅化物之前，在先前沉积的硅化钨上形成氯取代的硅烷基硅化钨沉积物。

6. 发明授权

US5877086A Metal planarization using a CVD wetting film 失效
标题翻译：使用CVD润湿膜进行金属平坦化
公开(公告)号：US5877086A
公开(公告)日：1999-03-02
申请号：US893871
申请日：1997-07-11
申请人： Michio Aruga
发明人： Michio Aruga
IPC分类号： C23C14/56 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/67184 , H01L21/76882
摘要： The present invention is a process for planarization of substrate layers comprising apertures to form continuous, void-free contacts or vias in sub-half micron applications. A CVD silicon or metal silicide wetting layer is deposited onto the substrate layer comprising apertures to provide a conformal wetting layer for a PVD metal layer. The PVD metal layer is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The CVD layer diffuses into the PVD layer and the resulting conductive layer is substantially void-free. The planarization process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of vias and contacts occurs without the formation of an oxide layer over the CVD wetting layer.
摘要翻译：本发明是用于平面化包括孔的基底层的方法，以在半微米应用中形成连续的无空隙触点或通孔。将CVD硅或金属硅化物润湿层沉积到包含孔的基底层上，以提供用于PVD金属层的共形润湿层。在低于金属熔点温度的温度下，将PVD金属层沉积在预先形成的CVD金属层上。 CVD层扩散到PVD层中，所得的导电层基本上无空隙。平坦化处理优选在包括PVD和CVD处理室的多室系统中进行，使得一旦将衬底引入真空环境中，就可以在CVD上形成通孔和触点的填充而不形成氧化物层润湿层。

7. 发明授权

US5643633A Uniform tungsten silicide films produced by chemical vapor depostiton 失效
标题翻译：通过化学气相沉积法生产的均匀的硅化钨膜
公开(公告)号：US5643633A
公开(公告)日：1997-07-01
申请号：US485925
申请日：1995-06-07
申请人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Moshe Eizenberg
发明人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Moshe Eizenberg
IPC分类号： C23C16/42 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/42 , C23C16/4405 , C23C16/45512 , C23C16/45561 , Y10S148/019 , Y10S148/027
摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
摘要翻译：从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。可以在工艺气体中加入接种气体。

8. 发明申请

US20080035754A1 Device for Treating Object and Process Therefor 审中-公开
标题翻译：用于处理对象及其过程的设备
公开(公告)号：US20080035754A1
公开(公告)日：2008-02-14
申请号：US11660477
申请日：2005-07-21
申请人： Michio Aruga , Koichi Saito , Kaori Tajima
发明人： Michio Aruga , Koichi Saito , Kaori Tajima
IPC分类号： B05B3/00
CPC分类号： H01L21/67051 , B05B7/0416 , B05B7/0475 , H01L21/02063 , H01L21/02071 , H01L21/67253
摘要： Disclosed is a system for treating an object, comprising a section for positioning an object on which the object to be treated is positioned under a predetermined atmosphere; a nozzle section for spraying the object with supplied vapor and water in mixture; means for moving the section for positioning an object and/or the nozzle section for allowing the nozzle section to spray the object on the section for positioning an object; means for controlling positional relationship between the section for positioning an object and the nozzle section to control relative rate (scan rate); and means for controlling, during the spraying, each of parameters of pressure of the vapor supplied to the nozzle section, flowrate of the water supplied to the nozzle section, area of an outlet of the nozzle section, spray time, scan rate and gap between the outlet of the nozzle section and the object.
摘要翻译：公开了一种用于处理物体的系统，包括：用于定位被处理物体位于预定气氛下的物体的部分; 喷嘴部分，用于以供应的蒸汽和水混合物喷射物体; 用于移动用于定位物体的部分和/或喷嘴部分用于允许喷嘴部分将物体喷射在用于定位物体的部分上的装置; 用于控制用于定位物体的部分与喷嘴部分之间的位置关系以控制相对速率（扫描速率）的装置; 以及用于在喷射期间控制供应到喷嘴部分的蒸汽的压力参数，供应到喷嘴部分的水的流量，喷嘴部分出口的面积，喷涂时间，扫描速率和间隙喷嘴部分的出口和物体。

9. 发明授权

US5558910A Uniform tungsten silicide films produced by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造的均匀的硅化钨膜
公开(公告)号：US5558910A
公开(公告)日：1996-09-24
申请号：US477836
申请日：1995-06-07
申请人： Susan G. Telford , Meng C. Tseng , Michio Aruga , Moshe Eizenberg
发明人： Susan G. Telford , Meng C. Tseng , Michio Aruga , Moshe Eizenberg
IPC分类号： C23C16/42 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/42 , C23C16/4405 , C23C16/45512 , C23C16/45561 , Y10S148/019 , Y10S148/027
摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
摘要翻译：从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。可以在工艺气体中加入接种气体。

10. 发明授权

US5456757A Susceptor for vapor deposition 失效
标题翻译：气相沉积的受体
公开(公告)号：US5456757A
公开(公告)日：1995-10-10
申请号：US146370
申请日：1993-10-29
申请人： Michio Aruga , Atsunobu Ohkuba , Akihiko Saito , Katsumasa Anan
发明人： Michio Aruga , Atsunobu Ohkuba , Akihiko Saito , Katsumasa Anan
IPC分类号： C23C16/44 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/00 , H05H1/00
CPC分类号： C23C16/4581
摘要： A novel susceptor used in a chemical vapor deposition device that is made of a ceramic material, specifically, an aluminum nitride material.
摘要翻译：一种用于由陶瓷材料，特别是氮化铝材料制成的化学气相沉积装置中的新型感受器。

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