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1. 发明授权

US07036453B2 Apparatus for reducing plasma charge damage for plasma processes 失效
标题翻译：用于降低等离子体工艺的等离子体电荷损伤的装置
公开(公告)号：US07036453B2
公开(公告)日：2006-05-02
申请号：US10658350
申请日：2003-09-08
申请人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
发明人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/455
摘要： A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
摘要翻译：提供了一种用于在处理室中的衬底上沉积薄膜以降低等离子体电荷损伤的发生率的方法。含有适于形成等离子体的前体气体的工艺气体流入处理室，并且从处理气体产生等离子体以将薄膜沉积在基板上。前体气体流入处理室，使得薄膜比衬底的边缘更快地沉积在衬底的中心。

2. 发明授权

US06660662B2 Method of reducing plasma charge damage for plasma processes 失效
标题翻译：减少等离子体工艺的等离子体电荷损伤的方法
公开(公告)号：US06660662B2
公开(公告)日：2003-12-09
申请号：US09771203
申请日：2001-01-26
申请人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
发明人： Tetsuya Ishikawa , Alexandros T. Demos , Seon-Mee Cho , Feng Gao , Kaveh F. Niazi , Michio Aruga
IPC分类号： H01L2144
CPC分类号： H01J37/3244 , C23C16/455
摘要： A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.
摘要翻译：提供了一种用于在处理室中的衬底上沉积薄膜以降低等离子体电荷损伤的发生率的方法。含有适于形成等离子体的前体气体的工艺气体流入处理室，并且从处理气体产生等离子体以将薄膜沉积在基板上。前体气体流入处理室，使得薄膜比衬底的边缘更快地沉积在衬底的中心。

3. 发明授权

US06486081B1 Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US06486081B1
公开(公告)日：2002-11-26
申请号：US09449203
申请日：1999-11-24
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： H01L2131
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/4411 , C23C16/455 , C23C16/45563 , C23C16/45578 , C23C16/507 , H01J37/3244 , H01L21/67069
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种用于在衬底上沉积FSG膜的方法，包括：将第一气体通过第一距离腔室的内表面的第一气体入口引入，并将第二气体通过第二气体入口引入第二气体距离室的内表面的距离，其中第二气体在室的内表面附近产生较高的分压，以防止内表面上的第一气体沉积。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

4. 发明授权

US6143078A Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US6143078A
公开(公告)日：2000-11-07
申请号：US191364
申请日：1998-11-13
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： C23C16/455 , H01L21/00 , H01L21/31 , C23C16/00 , H05H1/00
CPC分类号： H01L21/67017
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑构件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种在衬底上沉积膜的方法，包括：提供化学气相沉积室，将第一气体通过第一距离腔室内表面的第一距离处的第一气体入口引入第二气体，气体入口距离室的内表面第二距离，其中第二气体在室的内表面附近产生较高的分压，以防止从内表面上的第一气体沉积并产生处理气体的等离子体。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

5. 发明授权

US06814814B2 Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates 失效
标题翻译：通过溅射牺牲衬底清洁室内表面的残留物
公开(公告)号：US06814814B2
公开(公告)日：2004-11-09
申请号：US10109736
申请日：2002-03-29
申请人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
发明人： Alan W. Collins , Feng Gao , Tetsuya Ishikawa , Padmanaban Krishnaraj , Yaxin Wang
IPC分类号： B08B312
CPC分类号： H01J37/32862 , B08B7/00 , C23C14/564 , C23C16/4405 , Y10S438/905 , Y10S438/906
摘要： In a method of cleaning process residues formed on surfaces in a substrate processing chamber, a sacrificial substrate comprising a sacrificial material is placed in the chamber, a sputtering gas is introduced into the chamber, and the sputtering gas is energized to sputter the sacrificial material from the substrate. The sputtered sacrificial material reacts with residues on the chamber surfaces to clean them. In one version, the sacrificial substrate comprises a silicon-containing material that when sputtered deposits silicon on the chamber walls that reacts with and cleans fluorine-containing species that are left behind by a chamber cleaning process.
摘要翻译：在清洗在基板处理室的表面上形成的工艺残留物的方法中，将包括牺牲材料的牺牲基板放置在室中，将溅射气体引入室中，并且将溅射气体通电以将牺牲材料从底物。溅射的牺牲材料与室表面上的残留物反应以清洁它们。在一个版本中，牺牲衬底包括含硅材料，当溅射时，在室壁上沉积硅，其通过室清洁过程与留下的含氟物质反应并清除含氟物质。

6. 发明授权

US09272642B2 Vehicle seat 有权
标题翻译：车座
公开(公告)号：US09272642B2
公开(公告)日：2016-03-01
申请号：US14477272
申请日：2014-09-04
申请人： Hideki Kobayashi , Tetsuya Ishikawa , Kazuhisa Nishimura
发明人： Hideki Kobayashi , Tetsuya Ishikawa , Kazuhisa Nishimura
IPC分类号： B60N2/30 , B60N2/36 , B60N2/48
CPC分类号： B60N2/3065 , B60N2/3013 , B60N2/3088 , B60N2/36 , B60N2/859 , B60N2/874 , B60N2205/40
摘要： In a vehicle seat (car seat 1) including a first seat portion (seat cushion 10) movable between a use position and a retracted position, and a second seat portion (seat back 20) movable between a use position and a retracted position, an actuator mechanism is configured to cause the second seat portion to start moving toward its retracted position at a time when the first seat portion passes a predetermined intermediate position that is on a way from the use position toward the retracted position. In one embodiment, the actuator mechanism includes a biasing member (torsion spring 13, 23) configured to bias each of the seat cushion 10 and the seat back 20 from the use position toward the retracted position, a lock member (lock arm 42) configured to lock the seat back 20 in the use position, and an unlock device (cable 44, 42A) configured to release the lock member to cause the seat back 20 to start moving toward the retracted position, at a time when the seat cushion 10 passes the predetermined intermediate position that is on the way from a posture in which the seat cushion is ready for use toward a posture in which the seat cushion 10 is tipped up.
摘要翻译：在包括在使用位置和缩回位置之间可移动的第一座椅部分（座垫10）和可在使用位置和缩回位置之间移动的第二座椅部分（座椅靠背20）的车辆座椅（汽车座椅1）中，致动器机构构造成使得第二座椅部分在第一座椅部分经过从使用位置朝向缩回位置的途中经过的预定中间位置时开始向其缩回位置移动。在一个实施例中，致动器机构包括构造成将座垫10和座椅靠背20中的每一个从使用位置朝向缩回位置偏置的偏置构件（扭转弹簧13,23），配置在锁定构件将座椅靠背20锁定在使用位置，以及解锁装置（电缆44,42A），其构造成在座垫10通过时释放锁定构件以使座椅靠背20开始向缩回位置移动在从座垫准备好使用的姿势朝向座垫10倾斜的姿势的途中的预定中间位置。

7. 发明授权

US08651638B2 Inkjet printing apparatus 有权
标题翻译：喷墨打印设备
公开(公告)号：US08651638B2
公开(公告)日：2014-02-18
申请号：US13218626
申请日：2011-08-26
申请人： Tetsuya Ishikawa
发明人： Tetsuya Ishikawa
IPC分类号： B41J2/175
CPC分类号： B41J2/17509 , B41J2/175 , B41J2/17513 , B41J2/1752 , B41J2/17523 , B41J2/17553 , B41J2/17596
摘要： An inkjet printing apparatus comprises an ink tank including an ink accommodating unit, an ink leading-out mechanism for leading out the ink in the ink accommodating unit to an outside, and a housing, and an ink tank holder for removably retaining the ink tank, wherein a space is formed between the ink leading-out mechanism and the housing, and when the ink tank is mounted to the ink tank holder, an ink flow passage is formed by contact of an outer periphery of an ink leading-out needle in the ink tank holder with a sealing member in the ink leading-out mechanism, further comprising restriction means for restricting a position of the ink tank to the ink tank holder such that when removing the ink tank from the ink tank holder, the ink tank stops in a state where a tip end of the ink leading-out needle is in the space.
摘要翻译：一种喷墨打印设备包括一个墨盒，包括墨水容纳单元，用于将墨水容纳单元中的墨水引导到外部的墨水引出机构和外壳以及用于可拆卸地保持墨水盒的墨水盒保持器，其中在所述墨水引出机构和所述壳体之间形成空间，并且当所述墨水罐安装到所述墨水盒保持器时，墨水流动通道通过所述墨水引出针的外周部在墨水引出机构中具有密封构件的墨水盒保持器还包括限制装置，用于将墨水罐的位置限制到墨水盒保持器，使得当从墨水盒保持器移除墨水盒时，墨水罐停止墨水引出针的前端位于空间中的状态。

8. 发明申请

US20130320353A1 METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化钙相层析（HVPE）在形成图案的基底上形成III族氮化物膜的方法
公开(公告)号：US20130320353A1
公开(公告)日：2013-12-05
申请号：US13959469
申请日：2013-08-05
申请人： Olga Kryiouk , Yuriy Mehnik , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Olga Kryiouk , Yuriy Mehnik , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：沉积高品质低缺陷单晶III-III族氮化物膜的方法。提供具有多个特征的图案化衬底，其具有由空间分开的倾斜侧壁。通过在图案化衬底上的氢化物气相外延（HVPE）工艺沉积III-III族氮化物膜。 HVPE沉积工艺在特征之间的空间中形成具有第一晶体取向的III族氮化物膜，并且在倾斜侧壁上形成第二不同的晶体取向。空间中的第一晶体取向随后在侧壁上过度生长第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的重力位错。

9. 发明授权

US08568529B2 HVPE chamber hardware 有权
标题翻译： HVPE室硬件
公开(公告)号：US08568529B2
公开(公告)日：2013-10-29
申请号：US12637019
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

10. 发明申请

US20130229678A1 OPERATION PANEL AND INFORMATION PROCESSING DEVICE 审中-公开
标题翻译：操作面板和信息处理设备
公开(公告)号：US20130229678A1
公开(公告)日：2013-09-05
申请号：US13781640
申请日：2013-02-28
申请人： Tetsuya Ishikawa , Masaki Kakutani
发明人： Tetsuya Ishikawa , Masaki Kakutani
IPC分类号： G06K15/00
CPC分类号： G06K15/002 , G06K15/4095
摘要： Disclosed is an operation panel including: an operating unit to receive an operation from a user; a detecting unit to detect whether the operation panel is attached to a predetermined device; a communication unit to be wirelessly communicable with the predetermined device; and a control unit to switch a function of the predetermined device, which can be operated from the operating unit, so that the operation relating to a first function of the predetermined device can be carried out from the operating unit and the operation relating to a second function of the predetermined device cannot be carried out from the operating unit when the operation panel is not attached to the predetermined device, and so that at least the operation relating to the second function can be carried out from the operating unit when the operation panel is attached to the predetermined device.
摘要翻译：公开了一种操作面板，包括：操作单元，用于从用户接收操作; 检测单元，用于检测操作面板是否附接到预定的设备; 通信单元，其与所述预定设备无线通信; 以及控制单元，用于切换可以从操作单元操作的预定设备的功能，使得可以从操作单元执行与预定设备的第一功能有关的操作，并且涉及第二当操作面板未安装到预定的装置时，不能从操作单元执行预定装置的功能，并且当操作面板为操作面板时，至少可以从操作单元执行与第二功能有关的操作连接到预定的装置。

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