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    • 5. 发明授权
    • Imaging system for an extreme ultraviolet (EUV) beam-based microscope
    • 用于极紫外(EUV)光束显微镜的成像系统
    • US06894837B2
    • 2005-05-17
    • US10626130
    • 2003-07-24
    • Hans-Juergen DobschalThomas ScherueblRobert BrunnerNorbert RosenkranzJoern Greif-Wuestenbecker
    • Hans-Juergen DobschalThomas ScherueblRobert BrunnerNorbert RosenkranzJoern Greif-Wuestenbecker
    • G21K1/06G21K7/00G02B21/00
    • G21K1/06G21K7/00
    • Imaging system for a microscope based on extreme ultraviolet (EUV) radiation. The present invention is directed to a reflective imaging system for an x-ray microscope for examining and object in an object plane, wherein the object is illuminated by rays of a wavelength of less than 100 nm, particularly less than 30 nm, and is imaged in a magnified manner in an image plane. In the imaging system, according to the invention, for a microscope based on extreme ultraviolet (EUV) radiation with wavelengths in the range of less than 100 nm, with a magnification of 0.1× to 1000× and a structural length of less than 5 m, at least one of the imaging optical elements 2 and 3 in the beam path has a diffractive-reflective structure which is arranged on a spherical or plane area and has a non-rotationally symmetric, asymmetric shape. The arrangement according to the invention provides an imaging system which avoids the disadvantages of the prior art and ensures a high imaging quality. The manufacturing cost remains reasonable due to the exclusive use of spherical mirrors.
    • 基于极紫外(EUV)辐射的显微镜成像系统。 本发明涉及一种用于检查和物体在物平面中的X射线显微镜的反射成像系统,其中物体被小于100nm,特别是小于30nm的波长的光照射,并被成像 在图像平面中以放大的方式。 在成像系统中,根据本发明,对于具有波长在小于100nm,具有0.1x至1000x的放大倍数和小于5μm的结构长度的基于极紫外(EUV)辐射的显微镜, 光束路径中的成像光学元件2和3中的至少一个具有布置在球形或平面区域上并具有非旋转对称的不对称形状的衍射反射结构。 根据本发明的装置提供了一种避免现有技术的缺点并确保高成像质量的成像系统。 由于专门使用球面镜,制造成本仍然是合理的。
    • 6. 发明授权
    • Method for analyzing masks for photolithography
    • 分析光刻掩模的方法
    • US08718354B2
    • 2014-05-06
    • US12934423
    • 2009-04-09
    • Ulrich StroessnerThomas Scheruebl
    • Ulrich StroessnerThomas Scheruebl
    • G06K9/00G06F17/50
    • G03F7/70666G03F7/705G03F7/70608
    • The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter. Finally, the contour data records are combined to form a three-dimensional multicontour data record with the reciprocal of the energy dose as a third dimension, and, on the basis of the transitions from zero to values different than zero in the contours, a three-dimensional profile of the reciprocal of the energy dose depending on the position on the mask is generated. This profile, the so-called effective aerial image, is output or stored or automatically evaluated. The same can also occur with sections through said profile.
    • 本发明涉及一种用于分析光刻掩模的方法。 在该方法中,生成用于第一焦点设置的掩模的空间图像并将其存储在空中图像数据记录中。 将空间图像数据记录转移到基于该数据记录模拟光刻晶片曝光的算法。 在这种情况下,对多个相互不同的能量剂量进行模拟。 然后,在距离晶片表面的预定高度处,在各种情况下都确定了将光致抗蚀剂区域与没有光致抗蚀剂的区域分开的轮廓。 在能量剂量作为参数的轮廓数据记录中,在每种情况下,为每个能量剂量存储结果,也就是说轮廓。 最后,轮廓数据记录被组合以形成具有作为第三维度的能量剂量的倒数的三维多轨道数据记录,并且基于在轮廓中从零到不同于零的值的过渡,三 产生根据掩模上的位置的能量剂量的倒数的三维轮廓。 该配置文件,即所谓的有效航空图像,被输出或存储或自动评估。 通过所述剖面也可能发生同样的情况。