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1. 发明申请

US20110229010A1 METHOD AND DEVICE FOR MEASURING THE RELATIVE LOCAL POSITION ERROR OF ONE OF THE SECTIONS OF AN OBJECT THAT IS EXPOSED SECTION BY SECTION 有权
标题翻译：用于测量部分暴露部分的部分之一的相对本地位置错误的方法和装置
公开(公告)号：US20110229010A1
公开(公告)日：2011-09-22
申请号：US13130600
申请日：2009-11-28
申请人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
发明人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
IPC分类号： G06K9/00
CPC分类号： G03F7/70633 , B82Y10/00 , B82Y40/00 , G03F1/84 , G03F7/70616 , H01J37/3174
摘要： A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要翻译：提供了一种用于测量逐段暴露的物体的一个部分（特别是光刻掩模或晶片）的相对局部位置误差的方法，每个暴露部分具有多个测量标记，其中）以放大的方式成像大于该部分的对象的区域，并且被检测为图像，b）基于检测到的图像确定检测图像中包含的测量标记的位置误差，c）校正位置误差是通过由放大的成像和检测引起的位置误差分量从确定的测量标记的位置误差中提取导出的，d）基于校正位置导出一个部分的相对局部位置误差测量标记的误差。

2. 发明授权

US08731273B2 Method and device for measuring the relative local position error of one of the sections of an object that is exposed section by section 有权
标题翻译：用于测量被逐个暴露的对象的一个部分的相对局部位置误差的方法和装置
公开(公告)号：US08731273B2
公开(公告)日：2014-05-20
申请号：US13130600
申请日：2009-11-28
申请人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
发明人： Michael Arnz , Dirk Beyer , Wolfgang Harnisch , Thomas Scheruebl
IPC分类号： G06K9/40 , G01N21/00
CPC分类号： G03F7/70633 , B82Y10/00 , B82Y40/00 , G03F1/84 , G03F7/70616 , H01J37/3174
摘要： A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.
摘要翻译：提供了一种用于测量逐段暴露的物体的一个部分（特别是光刻掩模或晶片）的相对局部位置误差的方法，每个暴露部分具有多个测量标记，其中）以放大的方式成像大于该部分的对象的区域，并且被检测为图像，b）基于检测到的图像确定检测图像中包含的测量标记的位置误差，c）校正位置误差是通过由放大的成像和检测引起的位置误差分量从确定的测量标记的位置误差中提取导出的，d）基于校正位置导出一个部分的相对局部位置误差测量标记的误差。

3. 发明授权

US09431212B2 Method for determining the performance of a photolithographic mask 有权
标题翻译：用于确定光刻掩模性能的方法
公开(公告)号：US09431212B2
公开(公告)日：2016-08-30
申请号：US13701286
申请日：2011-04-29
申请人： Markus Waiblinger , Michael Budach , Thomas Scherübl , Dirk Beyer
发明人： Markus Waiblinger , Michael Budach , Thomas Scherübl , Dirk Beyer
IPC分类号： G01N23/00 , H01J37/28 , G01N23/22 , G01N23/225 , G03F1/86 , G03F1/24
CPC分类号： H01J37/28 , G01N23/2208 , G01N23/2251 , G01N2223/072 , G01N2223/079 , G03F1/24 , G03F1/86
摘要： The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.
摘要翻译：本发明涉及一种用于在曝光波长处确定光刻掩模的性能的方法，其步骤是扫描至少一个电子束穿过光刻掩模的至少一部分，测量由至少一个电子束产生的信号与光刻掩模的至少一部分，并且基于测量的信号确定曝光波长处的光刻掩模的至少一部分的性能。

4. 发明申请

US20120154773A1 METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK 审中-公开
标题翻译：用于校正由光刻胶掩模处理的波形上的误差的方法和装置
公开(公告)号：US20120154773A1
公开(公告)日：2012-06-21
申请号：US13310071
申请日：2011-12-02
申请人： Dirk Beyer
发明人： Dirk Beyer
IPC分类号： G03B27/68
CPC分类号： G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
摘要： A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site.
摘要翻译：提供了一种用于校正在晶片加工位置由光刻掩模处理的晶片上的误差的方法。该方法包括测量晶片上的误差，并通过在晶片处理部位局部地将激光系统的飞秒光脉冲局部施加到光刻掩模来修改光刻掩模上的图案位置。

5. 发明授权

US07720771B1 Method of dividing past computing instances into predictable and unpredictable sets and method of predicting computing value 有权
标题翻译：将过去的计算实例划分为可预测和不可预测的集合的方法以及预测计算值的方法
公开(公告)号：US07720771B1
公开(公告)日：2010-05-18
申请号：US11165810
申请日：2005-06-24
申请人： Eric Anderson , Dirk Beyer , Ira Cohen , Terence P. Kelly , Janet Wiener
发明人： Eric Anderson , Dirk Beyer , Ira Cohen , Terence P. Kelly , Janet Wiener
IPC分类号： G06F15/18
CPC分类号： G06N99/005
摘要： An embodiment of a method of dividing past computing instances into predictable and unpredictable sets begins with a first step of a computing entity storing a training data set comprising past computing instances. Each past computing instance comprises attributes and a past computing value. In a second step, the computing entity separates the training data set into a predictable set of past computing instances and an unpredictable set of past computing instances. According to an embodiment, a method of predicting a computing value begins with the first and second steps. The method of predicting the computing value continues with a third step of the computing entity forming a predictor from the predictable set of past computing instances. In a fourth step, the computing entity applies the predictor to a pending computing instance that meets a predictability test to determine a predicted value for the pending computing instance.
摘要翻译：将过去的计算实例划分为可预测和不可预测的集合的方法的实施例开始于存储包括过去的计算实例的训练数据集的计算实体的第一步骤。每个过去的计算实例包括属性和过去的计算值。在第二步骤中，计算实体将训练数据集分成可预测的一组过去的计算实例和不可预测的一组过去的计算实例。根据实施例，预测计算值的方法从第一和第二步骤开始。预测计算值的方法继续，计算实体的第三步从预测的一组过去的计算实例形成预测器。在第四步骤中，计算实体将预测器应用于满足可预测性测试的待决计算实例以确定未决计算实例的预测值。

6. 发明申请

US20080126279A1 Method for determining a recovery schedule 有权
公开(公告)号：US20080126279A1
公开(公告)日：2008-05-29
申请号：US11508102
申请日：2006-08-22
申请人： Kimberly Keeton , Dirk Beyer , Ernesto Brau , Arif Merchant , Cipriano Santos , Alex Zhang
发明人： Kimberly Keeton , Dirk Beyer , Ernesto Brau , Arif Merchant , Cipriano Santos , Alex Zhang
IPC分类号： G06G7/04
CPC分类号： G06F11/2069 , G06F11/1469 , G06F11/2082
摘要： Provided is a method for determining a recovery schedule. The method includes accepting as input a recovery graph. The recovery graph presents one or more strategies for data recovery. In addition, at least one objective is provided and accepted. The recovery graph is formalized as an optimization problem for the provided objective. When formalized as an optimization problem, at least one solution technique is applied to determine at least one recovery schedule.

7. 发明授权

US07076459B2 Demand estimation using auction price analysis 失效
公开(公告)号：US07076459B2
公开(公告)日：2006-07-11
申请号：US09813907
申请日：2001-03-21
申请人： Alex Xin Zhang , Dirk Beyer , Julie Ann Ward , Tongwei Liu
发明人： Alex Xin Zhang , Dirk Beyer , Julie Ann Ward , Tongwei Liu
IPC分类号： G06Q40/00
CPC分类号： G06Q30/08 , G06Q30/06 , G06Q40/00 , G06Q40/04
摘要： A method for generating a demand estimate for a product includes gathering a set of auction data which is relevant to the product, removing from the auction data all but a highest bid from each unique bidder in the auction data, and correcting a bias in the auction data caused by a set of characteristics of an auction from which the auction data is obtained. In one embodiment, the auction data is obtained from an on-line auction which is characterized by bidders not necessarily knowing the start time of the auction.

8. 发明申请

US20050287450A1 Process for controlling the proximity effect correction 有权
标题翻译：用于控制邻近效应校正的过程
公开(公告)号：US20050287450A1
公开(公告)日：2005-12-29
申请号：US11165312
申请日：2005-06-23
申请人： Peter Hudek , Dirk Beyer
发明人： Peter Hudek , Dirk Beyer
IPC分类号： G03C5/00 , G03F1/00 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters α, β and η, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters α, β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.
摘要翻译：一种用于控制电子束光刻系统中的邻近效应校正的方法。控制曝光以便在符合设计数据的处理之后获得所得到的图案。在第一步骤中，暴露任意设置模式，而不应用用于控制接近校正的处理。测量所得测试结构的几何形状并获得一组测量数据。在数值范围内，参数α，β和eta的基本输入参数从测量数据集中推导出来。通过将控制功能的至少基本输入参数α，β和eta单独地改变到测量数据集，从而获得优化的参数集合来适配模型。在根据设计数据曝光图案期间，将校正功能应用于电子束光刻系统的曝光控制。

9. 发明授权

US06600162B1 Method and device for exposing a substrate to light 失效
标题翻译：将基板曝光的方法和装置
公开(公告)号：US06600162B1
公开(公告)日：2003-07-29
申请号：US09600477
申请日：2000-09-21
申请人： Peter Hahmann , Dirk Beyer , Dorothee Krauhs , Thomas Elster
发明人： Peter Hahmann , Dirk Beyer , Dorothee Krauhs , Thomas Elster
IPC分类号： H05H300
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/004
摘要： The invention concerns a method for exposing a substrate (1) equipped with an n-layer photoresist system (2), an electrically conductive connection being created between a ground potential and the substrate (1) and/or at least one of the layers S1 through Sn of the photoresist system (2). The invention furthermore concerns an arrangement for carrying out said method. According to the present invention, what is achieved in a single process step is that by way of spring elements E1 through E4, a contact tip K1 is advanced as far as the layer S1, a contact tip K2 is advanced through the layer S1 as far as the layer S2, a contact tip K3 is advanced through the layer S1 and S2 as far as the layer S3, and so forth. The electrical charges from the layer S1 are dissipated to the ground potential via the contact tip K1, the charges from the layer S2 via the contact tip K2, etc., and/or and from the substrate (1) via a contact tip K4.
摘要翻译：本发明涉及一种用于暴露具有n层光致抗蚀剂系统（2）的衬底（1）的方法，在接地电位和衬底（1）之间产生的导电连接和/或层S1中的至少一个通过光致抗蚀剂体系（2）的Sn。本发明还涉及用于执行所述方法的装置。根据本发明，在单个工艺步骤中实现的是通过弹簧元件E1至E4，接触尖端K1前进到层S1，接触尖端K2通过层S1前进到远作为层S2，接触尖端K3通过层S1和S2前进直到层S3等等。来自层S1的电荷经由接触尖端K1，来自层S2的电荷经由接触尖端K2等和/或从衬底（1）经由接触尖端K4消散到接地电位。

10. 发明申请

US20140036243A1 METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK 有权
标题翻译：用于校正由光刻胶掩模处理的波形上的误差的方法和装置
公开(公告)号：US20140036243A1
公开(公告)日：2014-02-06
申请号：US13994556
申请日：2011-12-02
申请人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
发明人： Dirk Beyer , Vladimir Dmitriev , Ofir Sharoni , Nadav Wertsman
IPC分类号： G03F1/72
CPC分类号： G03F1/72 , G03F1/84 , G03F7/7035 , G03F7/70466 , G03F7/70625 , G03F7/70633
摘要： The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.
摘要翻译：本发明涉及一种用于校正由至少一个光刻掩模处理的晶片上的至少一个误差的方法，所述方法包括：（a）在晶片加工位置测量晶片上的至少一个误差，以及（b）修改至少一个光刻掩模，通过在所述至少一个光刻掩模中引入局部持续修饰的至少一种布置。

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