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    • 2. 发明授权
    • Air movement indicating device
    • 空气运动指示装置
    • US07757906B2
    • 2010-07-20
    • US11417819
    • 2006-05-04
    • Michael J. Barry
    • Michael J. Barry
    • B65D83/20
    • B65D83/206G01P5/00G01P13/02
    • A device comprises a container includes a dispensing mechanism for enabling pressurized dispensable contents contained within an interior space of the container to be selectively dispensed therefrom. A retention clip structure is attached to an exterior portion of the container and includes a clip portion that is biased to a closed configuration for enabling the clip portion to securely engage a portion of an article for attaching the container to the article. A cap assembly includes a cap body attached to the container and a trigger moveably attached to the cap body. The trigger includes a handle portion and a dispensing mechanism engagement portion attached to the handle portion. The handle portion is movable from a rest position to a displaced position for causing the dispensing mechanism actuation portion to act on the dispensing mechanism such that the pressurized dispensable contents are dispensed from within the interior space of the container.
    • 一种装置包括容器,其包括分配机构,用于使容纳在容器的内部空间内的加压可分配的内容物能够从其中选择性地分配。 保持夹结构附接到容器的外部部分,并且包括夹持部分,该夹子部分被偏置到关闭构造,以使得夹子部分能够牢固地接合用于将容器附接到制品的物品的一部分。 盖组件包括附接到容器的盖体和可移动地附接到盖体的触发器。 触发器包括手柄部分和附接到手柄部分的分配机构接合部分。 手柄部分可从静止位置移动到移动位置,以使得分配机构致动部分作用在分配机构上,使得加压的可分配内容物从容器的内部空间内分配。
    • 3. 发明授权
    • High reliability logic circuit for radiation environment
    • 用于辐射环境的高可靠性逻辑电路
    • US5870332A
    • 1999-02-09
    • US635794
    • 1996-04-22
    • Michael D. LaheyDebra S. HarrisHarry N. GardnerMichael J. Barry
    • Michael D. LaheyDebra S. HarrisHarry N. GardnerMichael J. Barry
    • H03K19/20G11C5/00H03K3/037G11C11/40
    • H03K3/0375G11C5/005
    • A high reliability logic circuit designed to withstand a single event upset (SEU) induced by an ion transitioning through a semiconductor structure is embodied in a memory circuit which includes a first memory cell and a second memory cell. The first and second memory cells receive a first input signal and a second input signal. The memory cells contain a logic circuit for producing a logic signal output driven by either a pullup or pulldown driver when the first and second input signals are of a desired logic state and produces a high impedance output if either input signal is not of their respective desired logic states.The memory cells also have sufficient nodal capacitance such that the output from the first or second memory cell will not be corrupted by an SEU in the logic circuit of either the first or second memory cell.The outputs of the first memory cell and second memory cell are further summed in analog fashion to produce a single output from the memory circuit. The summing of the output signals from the first and second memory cell prevents a single error in either memory cell from propagating to a next stage.
    • 设计成承受由通过半导体结构转移的离子引起的单个事件不正常(SEU)的高可靠性逻辑电路体现在包括第一存储单元和第二存储单元的存储器电路中。 第一和第二存储单元接收第一输入信号和第二输入信号。 当第一和第二输入信号是期望的逻辑状态时,存储器单元包含用于产生由上拉驱动器或下拉驱动器驱动的逻辑信号输出的逻辑电路,并且如果任一输入信号不是它们各自期望的,则产生高阻抗输出 逻辑状态。 存储单元也具有足够的节点电容,使得来自第一或第二存储单元的输出不会被第一或第二存储单元的逻辑电路中的SEU所破坏。 第一存储器单元和第二存储器单元的输出进一步以模拟方式相加以产生来自存储器电路的单个输出。 来自第一和第二存储器单元的输出信号的相加防止任一存储器单元中的单个错误传播到下一级。
    • 6. 发明授权
    • Radiation resistant sram memory cell
    • 耐辐射记忆体
    • US5157625A
    • 1992-10-20
    • US526758
    • 1990-05-22
    • Michael J. Barry
    • Michael J. Barry
    • G11C11/412
    • G11C11/4125
    • A memory cell employs four interconnected modules, each having two inputs and a truth table that has a logic level for input states and provides for a high impedance output state for unallowed states which differ from an allowed state by the status of one input. The interconnection is such that each module of a pair has as inputs the outputs of both members of the other pair, so that if one module changes state, the inputs to the members of the other will be in one of the unallowed states that produces a high impedance output. Thus, a radiation induced change of state in one module will not propagate through the system, but will be restored to an allowed state by action of the unaffected modules.
    • 存储器单元采用四个互连的模块,每个模块具有两个输入端和一个具有用于输入状态的逻辑电平的真值表,并且通过一个输入的状态为不允许的状态提供高阻抗输出状态。 互连使得一对的每个模块具有作为另一对的两个成员的输出的输入,使得如果一个模块改变状态,则对另一个的成员的输入将处于产生一个 高阻抗输出。 因此,辐射诱导的一个模块中的状态变化将不会传播通过系统,而是将通过未受影响的模块的动作恢复到允许的状态。