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1. 发明授权

US6095083A Vacuum processing chamber having multi-mode access 失效
标题翻译：真空处理室具有多模式存取
公开(公告)号：US6095083A
公开(公告)日：2000-08-01
申请号：US892300
申请日：1997-07-14
申请人： Michael Rice , Eric Askarinam , Gerhard Schneider , Kenneth S. Collins
发明人： Michael Rice , Eric Askarinam , Gerhard Schneider , Kenneth S. Collins
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683 , C23C16/00 , H05H1/00
CPC分类号： H01L21/31116 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346
摘要： The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced. Moreover, such access is provided without the need to disconnect utilities or instrumentation, since the release of a latch and pivoting the cold plate assembly away from the chamber body upwards is all that is needed to gain access to either the top of the roof of the processing chamber or the inside of the chamber. Chamber roof cooling is provided through a separable connection which is spring clamped to provide a high confidence that uniform thermal conductivity across a clamped joint is maintained.
摘要翻译：通过提供真空室顶部组件来增强真空处理室的可维护性和部件更换的情况，真空室顶部组件与真空室主体的连接通过夹紧连接。屋顶组件所需的配件，例如冷却，加热，RF功率分别被支撑并终止于支撑冷板的附件，其被单独安装，例如通过从室主体铰接而易于移动。然后，室的屋顶可以容易地与室主体分离并被更换。在另外的模式中，可以容易地升高室顶，以便容易地进入处理室内的模块化部件。暴露于腔室中的等离子体的所有组件都可以轻松访问和更换。此外，由于释放闩锁并将冷板组件向上远离室体转动，因此提供了这种接入，而不需要断开连接器的使用或仪器，因为所有这些都需要进入屋顶的顶部处理室或室内。室顶冷却是通过弹簧夹紧的可分离连接来提供的，以提供保持夹紧接头两端的均匀热导率的高置信度。

2. 发明授权

US6077384A Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US6077384A
公开(公告)日：2000-06-20
申请号：US597577
申请日：1996-02-02
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： H05H1/46 , A21D2/18 , A23G3/34 , A23G9/52 , A23L1/0524 , A23L1/0526 , A23L1/0532 , A23L1/054 , A23L1/187 , A23L1/214 , A23L1/236 , A23L1/308 , A23L2/60 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23L19/115 , A23L2/60 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , A23L9/12 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01L21/6831 , A23G2200/06 , H01J2237/3345 , H01J2237/3346
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
摘要翻译：本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

3. 发明授权

US06623596B1 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US06623596B1
公开(公告)日：2003-09-23
申请号：US09523824
申请日：2000-03-13
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： C23F100
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23G2200/06 , A23L2/60 , A23L9/12 , A23L19/115 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01J2237/3345 , H01J2237/3346 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.
摘要翻译：一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。

4. 发明授权

US06444085B1 Inductively coupled RF plasma reactor having an antenna adjacent a window electrode 失效
标题翻译：具有邻近窗口电极的天线的感应耦合射频等离子体反应器
公开(公告)号：US06444085B1
公开(公告)日：2002-09-03
申请号：US09675319
申请日：2000-09-29
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , B01D53/22 , B01D53/226 , B01D53/268 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.
摘要翻译：本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线包括相对于工件的平面空间分布在非平面中的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

5. 发明授权

US06165311A Inductively coupled RF plasma reactor having an overhead solenoidal antenna 失效
标题翻译：具有架空螺线管天线的感应耦合射频等离子体反应器
公开(公告)号：US06165311A
公开(公告)日：2000-12-26
申请号：US648254
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
IPC分类号： H05H1/46 , B01D53/22 , B01D53/26 , C23C16/517 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/683 , C23F1/02
CPC分类号： H01J37/32458 , B01D53/22 , B01D53/226 , B01D53/268 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar manner relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.
摘要翻译：本发明体现在电感耦合RF等离子体反应器中，其包括限定等离子体反应器室的反应室外壳和用于将工件保持在室内的支撑件，邻近反应室壳体的非平面感应天线，非平面感应天线包括相对于工件的平面以非平面方式空间分布的电感元件，以补偿天线的RF感应图案中的零点，以及耦合到非平面感应天线的等离子体源RF电源。平面感应天线可以是对称的或非对称的，尽管它优选地包括诸如导电绕组的垂直堆叠的螺线管绕组。在优选实施例中，绕组处于距对称轴的最小径向距离，而在替代实施例中，绕组处于与对称半径相当大的部分的对称轴的径向距离处。

6. 发明授权

US06544429B1 Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition 失效
标题翻译：用氙添加增强氧化硅蚀刻速率和衬底选择性
公开(公告)号：US06544429B1
公开(公告)日：2003-04-08
申请号：US09405869
申请日：1999-09-24
申请人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongchin Shan , Kenneth S. Collins , Chunshi Cui , Michael Rice
发明人： Hoiman (Raymond) Hung , Joseph P. Caulfield , Hongchin Shan , Kenneth S. Collins , Chunshi Cui , Michael Rice
IPC分类号： H01L213065
CPC分类号： H01L21/31116
摘要： A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) to enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in a time oxide etch in which holes and corners have already been formed, for example counterbore vias in a dual damascene structure. In this case, the relative amount of xenon need not be so high, but xenon still reduces faceting of the oxide corners. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases. The plasma etching preferably includes striking the plasma with argon, switching to xenon and the fluorine-based gas but at reduced bias power to stabilize the plasma, and then increasing the bias to a full etching level.
摘要翻译：等离子体蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。主要含氟气体，优选六氟丁二烯（C 4 F 6）与显着更大量的稀释气氙（Xe）组合以增强氮化物选择性而不发生蚀刻停止。该化学反应也可用于在其中形成孔和角的时间氧化物蚀刻中蚀刻氧化物，例如双镶嵌结构中的沉孔。在这种情况下，氙的相对量不需要太高，但是氙气仍然会减小氧化物角的小面积。本发明可以与相关的重碳氟化合物和其它氟基蚀刻气体一起使用。等离子体蚀刻优选地包括用氩气冲击等离子体，切换到氙气和氟基气体，但是以降低的偏置功率来稳定等离子体，然后将偏压增加到完全蚀刻水平。

7. 发明授权

US06218312B1 Plasma reactor with heated source of a polymer-hardening precursor material 失效
标题翻译：具有聚合物硬化前体材料的加热源的等离子体反应器
公开(公告)号：US06218312B1
公开(公告)日：2001-04-17
申请号：US08987509
申请日：1998-10-08
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21302
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
摘要翻译：本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅），并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置或远程加热硅片。

8. 发明授权

US6036877A Plasma reactor with heated source of a polymer-hardening precursor material 失效
公开(公告)号：US6036877A
公开(公告)日：2000-03-14
申请号：US648256
申请日：1996-05-13
申请人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
发明人： Kenneth S. Collins , Michael Rice , David W. Groechel , Gerald Zheyao Yin , Jon Mohn , Craig A. Roderick , Douglas Buchberger , Chan-Lon Yang , Yuen-Kui Wong , Jeffrey Marks , Peter Keswick
IPC分类号： H01L21/302 , C23C16/517 , H01J37/32 , H01L21/3065 , H01L21/311 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32871 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01L21/31116 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382
摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

9. 发明授权

US06736931B2 Inductively coupled RF plasma reactor and plasma chamber enclosure structure therefor 失效
公开(公告)号：US06736931B2
公开(公告)日：2004-05-18
申请号：US09970121
申请日：2001-10-02
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Craig A. Roderick
IPC分类号： C23C1600
CPC分类号： H01J37/32458 , B01D53/22 , B01D53/226 , B01D53/268 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

10. 发明授权

US5925212A Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing 失效
标题翻译：用于获得用于批量生产等离子体处理中的等离子体加热的相互作用部件的可重复温度对时间曲线的装置和方法
公开(公告)号：US5925212A
公开(公告)日：1999-07-20
申请号：US524135
申请日：1995-09-05
申请人： Michael Rice , David W. Groechel , James Cruse , Kenneth S. Collins
发明人： Michael Rice , David W. Groechel , James Cruse , Kenneth S. Collins
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , C23F1/02 , B44C1/22 , C03C15/00 , C23C14/00
CPC分类号： H01J37/32871
摘要： The temperatures of scavenger-emitting kit parts in a high-density plasma (HDP) etching system are elevated to or close to respective steady state equilibrium temperatures so that scavenger chemistry and rates remain substantially the same on a wafer-to-wafer basis. A relatively inert warm-up plasma is turned on within the HDP chamber during idle time periods that precede or occur between executions of a predefined plasma-processing recipe so as to raise the temperatures of chamber-internal kit parts.
摘要翻译：高密度等离子体（HDP）蚀刻系统中的清除剂发射试剂盒部件的温度升高到或接近相应的稳态平衡温度，使得清除剂化学和速率在晶片到晶片的基础上保持基本相同。在预定等离子体处理配方的执行之前或之后的空闲时间段期间，在HDP室内开启相对惰性的预热等离子体，以提高室内部套件部件的温度。

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