专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6077384A Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US6077384A
公开(公告)日：2000-06-20
申请号：US597577
申请日：1996-02-02
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： H05H1/46 , A21D2/18 , A23G3/34 , A23G9/52 , A23L1/0524 , A23L1/0526 , A23L1/0532 , A23L1/054 , A23L1/187 , A23L1/214 , A23L1/236 , A23L1/308 , A23L2/60 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/683 , H05H1/00
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23L19/115 , A23L2/60 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , A23L9/12 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01L21/6831 , A23G2200/06 , H01J2237/3345 , H01J2237/3346
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
摘要翻译：本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

2. 发明授权

US06623596B1 Plasma reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：等离子体反应器具有通过平行板电极耦合电力的感应天线
公开(公告)号：US06623596B1
公开(公告)日：2003-09-23
申请号：US09523824
申请日：2000-03-13
申请人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
发明人： Kenneth S. Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Chiu-Wing Tsui , David W. Groechel , Raymond Hung
IPC分类号： C23F100
CPC分类号： H01J37/32458 , A21D2/185 , A23G3/346 , A23G9/52 , A23G2200/06 , A23L2/60 , A23L9/12 , A23L19/115 , A23L27/30 , A23L27/32 , A23L29/231 , A23L29/238 , A23L29/256 , A23L29/27 , A23L33/21 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01J2237/3345 , H01J2237/3346 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.
摘要翻译：一种用于加工工件的等离子体反应器包括限定处理室的反应器壳体，用于在其处理期间支撑工件的室内的基座，覆盖在基底上的半导体窗口电极，用于将等离子体前体气体引入室中的气体入口系统耦合到所述半导体窗口电极的电端子，与所述半导体窗电极的与所述半导体窗电极相对的一侧的电感天线，用于通过所述半导体窗电极将功率耦合到所述室的内部。

3. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

4. 发明授权

US6054013A Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：平行板电极等离子体反应器具有感应天线和等离子体离子密度的径向分布
公开(公告)号：US6054013A
公开(公告)日：2000-04-25
申请号：US740124
申请日：1996-10-24
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H05H1/46 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/683 , H05H1/00
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

5. 发明授权

US06193836B1 Center gas feed apparatus for a high density plasma reactor 失效
标题翻译：用于高密度等离子体反应器的中心供气装置
公开(公告)号：US06193836B1
公开(公告)日：2001-02-27
申请号：US09480313
申请日：2000-01-10
申请人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
发明人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
IPC分类号： H05H100
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/32467 , Y10S156/914
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
摘要翻译：本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

6. 发明授权

US06238588B1 High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
标题翻译：高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺
公开(公告)号：US06238588B1
公开(公告)日：2001-05-29
申请号：US08733554
申请日：1996-10-21
申请人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
发明人： Kenneth Collins , David Groechel , Raymond Hung , Michael Rice , Gerald Yin , Jian Ding , Chunshi Cui
IPC分类号： B44C122
CPC分类号： H01L21/02063 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.
摘要翻译：本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻含氧层和积聚在非含氧底层上的含碳聚合物种类。或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

7. 发明授权

US5965035A Self aligned contact etch using difluoromethane and trifluoromethane 失效
标题翻译：使用二氟甲烷和三氟甲烷进行自对准接触蚀刻
公开(公告)号：US5965035A
公开(公告)日：1999-10-12
申请号：US956641
申请日：1997-10-23
申请人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
发明人： Raymond Hung , Jian Ding , Joseph P. Caulfield , Gerald Z. Yin
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76804
摘要： An oxide etch process that is highly selective to nitride, thereby being beneficial for a self-aligned contact etch of silicon dioxide to an underlying thin layer of silicon nitride. The process uses difluoromethane (CH.sub.2 F.sub.2) for its strong polymer forming and a greater amount of trifluoromethane (CHF.sub.3) for its strong etching, and with a high diluent fraction of argon (Ar). The etch process is performed at a low pressure of about 20 milliTorr in a high-density plasma etching chamber.
摘要翻译：对氮化物具有高度选择性的氧化物蚀刻工艺，从而有利于将二氧化硅自动对准接触蚀刻到下面的氮化硅薄层。该方法使用二氟甲烷（CH 2 F 2）作为其强聚合物形成和更大量的三氟甲烷（CHF 3）用于其强腐蚀，并且具有高稀释剂部分的氩（Ar）。蚀刻工艺在高密度等离子体蚀刻室中在约20毫乇的低压下进行。

8. 发明授权

US06440864B1 Substrate cleaning process 失效
标题翻译：基材清洗工艺
公开(公告)号：US06440864B1
公开(公告)日：2002-08-27
申请号：US09607822
申请日：2000-06-30
申请人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
发明人： Thomas J. Kropewnicki , Jeremiah T. Pender , Henry Fong , Charles Peter Auglis , Raymond Hung , Hongqing Shan
IPC分类号： H01L2100
CPC分类号： H01L21/02063 , B08B7/0035 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H05K3/26
摘要： A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas comprises cleaning gas, such as an oxygen-containing gas, and an additive gas, such as NH3. In one version, the process gas is introduced to remove residue 60 and resist material 50 from the substrate and to remove residue from surfaces in the process chamber 75.
摘要翻译：基板清洁方法包括将基板30暴露于通电的处理气体以去除残留物60并从基板30抵抗材料50.在一种形式中，工艺气体包括清洁气体，例如含氧气体和添加气体，如NH3。在一个版本中，引入工艺气体以除去残留物60并从衬底抵抗材料50并从处理室75中的表面去除残留物。

9. 发明授权

US06174451B1 Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons 失效
标题翻译：使用六氟丁二烯和相关不饱和氢氟烃的氧化物蚀刻工艺
公开(公告)号：US06174451B1
公开(公告)日：2001-01-16
申请号：US09193056
申请日：1998-11-16
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L2131
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention uses one of three unsaturated 3- and 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), all of which have boiling points below 10° C. and are commercially available. The unsaturated hydrofluorocarbon together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明使用沸点低于10℃的三种不饱和3-和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6），五氟丙烯（C 3 HF 5）和三氟丙炔（C 3 H 3 F 3）中的一种，并且可商购。将不饱和氢氟烃与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

10. 发明授权

US06613691B1 Highly selective oxide etch process using hexafluorobutadiene 失效
标题翻译：使用六氟丁二烯的高选择性氧化物蚀刻工艺
公开(公告)号：US06613691B1
公开(公告)日：2003-09-02
申请号：US09675360
申请日：2000-09-29
申请人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
发明人： Raymond Hung , Joseph P. Caulfield , Hongching Shan , Ruiping Wang , Gerald Z. Yin
IPC分类号： H01L21475
CPC分类号： H01L21/31116
摘要： An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention preferably uses the unsaturated 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), which has a below 10°C. and is commercially available. The hexafluorobutadiene together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
摘要翻译：一种氧化物蚀刻工艺，特别用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。本发明优选使用低于10℃的不饱和4-碳碳氟化合物，特别是六氟丁二烯（C 4 F 6）。并且是可商购的。将六氟丁二烯与氩一起激发成反应器中的高密度等离子体，其将等离子体源功率感应耦合到室中，并且RF偏置支撑晶片的基座电极。优选地，使用两步蚀刻方法，其中在主要步骤中使用上述蚀刻气体以提供良好的垂直分布，并且在过蚀刻中加入更强的聚合碳氟化合物如二氟甲烷（CH 2 F 2）以保护氮化物角。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式