专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050153076A1 Method and apparatus for spraying trusses with a mold and insect preventative solution 失效
标题翻译：用模具和昆虫预防液喷射桁架的方法和装置
公开(公告)号：US20050153076A1
公开(公告)日：2005-07-14
申请号：US11018517
申请日：2004-12-20
申请人： Michael Reed , David Reed , Dale Collins
发明人： Michael Reed , David Reed , Dale Collins
IPC分类号： B05B15/12 , B05D5/00 , B05C5/00 , B05B7/00
CPC分类号： B05B14/40 , Y02P70/36
摘要： A spray box assembly including, in combination, a top spray box, a bottom spray box, the boxes being juxtapositioned to define a pathway therebetween, at least one spray assembly positioned within at least one of the boxes and a supply assembly for supplying a treating solution to the spray assembly to coat product with the treating solution as the product is fed through the pathway and also including a method of coating a product with a treating solution, comprising the steps of feeding the product into a pathway between top spray box and a bottom spray box and spraying the treating solution within at least one of the boxes about the pathway to coat the product with the treating solution as the product is fed through the pathway.
摘要翻译：一种喷雾箱组件，其组合包括顶部喷雾箱，底部喷雾箱，所述盒并置以在其间限定通道，至少一个位于至少一个盒子内的喷洒组件和用于供应处理该溶液在产品通过该通道进料时，与处理溶液一起涂覆产品，还包括用处理溶液涂覆产品的方法，该方法包括以下步骤：将产物进料到顶部喷雾盒和底部喷雾箱，并且当处理溶液通过该通道进料时，将处理溶液喷洒在围绕通路的至少一个盒中，以用处理溶液涂覆产品。

2. 发明申请

US20060063377A1 Methods for creating electrophoretically insulated vias in semiconductive substrates 有权
标题翻译：在半导体衬底中形成电泳绝缘通孔的方法
公开(公告)号：US20060063377A1
公开(公告)日：2006-03-23
申请号：US11266837
申请日：2005-11-04
申请人： Warren Farnworth , Dale Collins , Steven McDonald
发明人： Warren Farnworth , Dale Collins , Steven McDonald
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/316 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： Methods for creating lined vias in semiconductor substrates. Using electrophoretic deposition techniques, micelles of a lining material are deposited on the wall of the via, reacting with the surface of the wall until the entire wall is covered by the lining material. The lining material is then fixed in place to form a layer lining the via. The lined via may then be filled with a desired material. For example, a via lined with an insulative material may be filled with a material such as copper to create an insulated conductive via through the substrate.
摘要翻译：在半导体衬底中形成衬里通孔的方法。使用电泳沉积技术，衬里材料的胶束沉积在通孔的壁上，与壁的表面反应直到整个壁被衬里材料覆盖。然后将衬里材料固定在适当位置以形成衬套通孔的层。然后可以用所需的材料填充衬里的通孔。例如，衬有绝缘材料的通孔可以填充有诸如铜的材料，以通过基底产生绝缘的导电通孔。

3. 发明申请

US20050139480A1 Methods of electrochemically treating semiconductor substrates 有权
公开(公告)号：US20050139480A1
公开(公告)日：2005-06-30
申请号：US11053778
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , C25D3/38
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

4. 发明申请

US20070144628A1 INTERMEDIATE ANNEAL FOR METAL DEPOSITION 有权
标题翻译：中间金属沉积物
公开(公告)号：US20070144628A1
公开(公告)日：2007-06-28
申请号：US11682406
申请日：2007-03-06
申请人： Dale Collins
发明人： Dale Collins
IPC分类号： C22F1/08
CPC分类号： H01L21/76871 , H01L21/2885 , H01L21/76877 , H01L21/76883
摘要： The present teachings and illustrations describe a process for forming a plurality of conductive structures in or on a substrate. In one embodiment, the process comprises forming a plurality of recesses in or on the substrate, wherein the plurality of recesses include recesses having different dimensions. In addition, the process further comprises (i) forming a conductive layer which at least partially fills the plurality of recesses and (ii) treating the conductive layer to improve the conductive properties of the conductive layer. Moreover, the process still further comprises (iii) sequentially repeating acts (i) and (ii) until each of the recesses of the plurality of recesses are filled to a desired dimension and such that the conductive material in the recesses of smaller dimension are more uniformly adhered to the bottom surfaces of the recesses.
摘要翻译：本教导和说明描述了在衬底中或衬底上形成多个导电结构的工艺。在一个实施例中，该方法包括在基底中或基底上形成多个凹槽，其中多个凹槽包括具有不同尺寸的凹槽。此外，该方法还包括（i）形成至少部分地填充多个凹部的导电层，和（ii）处理导电层以改善导电层的导电性能。此外，该方法还包括（iii）顺序地重复动作（i）和（ii），直到多个凹部中的每个凹部被填充到期望的尺寸，并且使得较小尺寸的凹槽中的导电材料更多均匀地粘附到凹部的底面。

5. 发明申请

US20070004197A1 Methods for creating electrophoretically insulated vias in semiconductive substrates 有权
标题翻译：在半导体衬底中形成电泳绝缘通孔的方法
公开(公告)号：US20070004197A1
公开(公告)日：2007-01-04
申请号：US11516403
申请日：2006-09-06
申请人： Warren Farnworth , Dale Collins , Steven McDonald
发明人： Warren Farnworth , Dale Collins , Steven McDonald
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/316 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： Methods are provided for creating lined vias in semiconductor substrates. Using electrophoretic deposition techniques, micelles of a lining material are deposited on the wall of the via, reacting with the surface of the wall until the entire wall is covered by the lining material. The lining material is then fixed in place to form a layer lining the via. The lined via may then be filled with a desired material. For example, a via lined with an insulative material may be filled with a material such as copper to create an insulated conductive via through the substrate.
摘要翻译：提供了用于在半导体衬底中形成衬里通孔的方法。使用电泳沉积技术，衬里材料的胶束沉积在通孔的壁上，与壁的表面反应直到整个壁被衬里材料覆盖。然后将衬里材料固定在适当位置以形成衬套通孔的层。然后可以用所需的材料填充衬里的通孔。例如，衬有绝缘材料的通孔可以填充有诸如铜的材料，以通过基底产生绝缘的导电通孔。

6. 发明申请

US20050167277A1 Method of electroplating a substance over a semiconductor substrate 有权
公开(公告)号：US20050167277A1
公开(公告)日：2005-08-04
申请号：US11053794
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

7. 发明申请

US20070048932A1 Semiconductor constructions comprising conductive structures, and methods of forming conductive structures 失效
标题翻译：包括导电结构的半导体结构以及形成导电结构的方法
公开(公告)号：US20070048932A1
公开(公告)日：2007-03-01
申请号：US11218232
申请日：2005-09-01
申请人： Dale Collins , Rita Klein , James Green
发明人： Dale Collins , Rita Klein , James Green
IPC分类号： H01L21/8242
CPC分类号： H01L21/76885 , H01L21/76834 , H01L21/76852
摘要： The invention includes methods of forming pluralities of electrically conductive structures. The methods can include formation of a gradient-containing material across a substrate and in direct physical contact with conductive surfaces of nodes. The gradient-containing material can consist essentially of tantalum nitride at a lowermost portion in contact with the conductive surfaces, consist essentially of tantalum at an uppermost portion, and have a TaN/Ta gradient extending between the lowermost and uppermost portions. Alternatively, the gradient-containing material can have a Co/W gradient extending therethrough. Conductive structures can be formed over the gradient-containing material. The invention also includes constructions comprising electrically conductive lines over a material having a TaN/Ta gradient, or a W/Co gradient, extending therethrough.
摘要翻译：本发明包括形成多个导电结构的方法。这些方法可以包括在衬底上形成含梯度的材料，并且与节点的导电表面直接物理接触。含梯度的材料可以基本上由在与导电表面接触的最下部分的氮化钽组成，其基本上由最上部的钽构成，并且具有在最下部和最上部之间延伸的TaN / Ta梯度。或者，含梯度的材料可以具有从其延伸的Co / W梯度。可以在含梯度材料上形成导电结构。本发明还包括在TaN / Ta梯度或延伸穿过其中的W / Co梯度的材料上包括导电线的构造。

8. 发明申请

US20050167280A1 Method of forming a metal-containing layer over selected regions of a semiconductor substrate 有权
标题翻译：在半导体衬底的选定区域上形成含金属层的方法
公开(公告)号：US20050167280A1
公开(公告)日：2005-08-04
申请号：US11054130
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

9. 发明申请

US20050139481A1 Method of electroplating a substance over a semiconductor substrate 有权
标题翻译：在半导体衬底上电镀物质的方法
公开(公告)号：US20050139481A1
公开(公告)日：2005-06-30
申请号：US11053781
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , H05B3/08
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

10. 发明申请

US20050139479A1 Method of forming a mass over a semiconductor substrate 有权
标题翻译：在半导体衬底上形成质量的方法
公开(公告)号：US20050139479A1
公开(公告)日：2005-06-30
申请号：US11053765
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , C25D3/38
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式