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1. 发明申请

US20070048932A1 Semiconductor constructions comprising conductive structures, and methods of forming conductive structures 失效
标题翻译：包括导电结构的半导体结构以及形成导电结构的方法
公开(公告)号：US20070048932A1
公开(公告)日：2007-03-01
申请号：US11218232
申请日：2005-09-01
申请人： Dale Collins , Rita Klein , James Green
发明人： Dale Collins , Rita Klein , James Green
IPC分类号： H01L21/8242
CPC分类号： H01L21/76885 , H01L21/76834 , H01L21/76852
摘要： The invention includes methods of forming pluralities of electrically conductive structures. The methods can include formation of a gradient-containing material across a substrate and in direct physical contact with conductive surfaces of nodes. The gradient-containing material can consist essentially of tantalum nitride at a lowermost portion in contact with the conductive surfaces, consist essentially of tantalum at an uppermost portion, and have a TaN/Ta gradient extending between the lowermost and uppermost portions. Alternatively, the gradient-containing material can have a Co/W gradient extending therethrough. Conductive structures can be formed over the gradient-containing material. The invention also includes constructions comprising electrically conductive lines over a material having a TaN/Ta gradient, or a W/Co gradient, extending therethrough.
摘要翻译：本发明包括形成多个导电结构的方法。这些方法可以包括在衬底上形成含梯度的材料，并且与节点的导电表面直接物理接触。含梯度的材料可以基本上由在与导电表面接触的最下部分的氮化钽组成，其基本上由最上部的钽构成，并且具有在最下部和最上部之间延伸的TaN / Ta梯度。或者，含梯度的材料可以具有从其延伸的Co / W梯度。可以在含梯度材料上形成导电结构。本发明还包括在TaN / Ta梯度或延伸穿过其中的W / Co梯度的材料上包括导电线的构造。

2. 发明申请

US20050139480A1 Methods of electrochemically treating semiconductor substrates 有权
公开(公告)号：US20050139480A1
公开(公告)日：2005-06-30
申请号：US11053778
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , C25D3/38
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

3. 发明申请

US20050167277A1 Method of electroplating a substance over a semiconductor substrate 有权
公开(公告)号：US20050167277A1
公开(公告)日：2005-08-04
申请号：US11053794
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.

4. 发明申请

US20050167280A1 Method of forming a metal-containing layer over selected regions of a semiconductor substrate 有权
标题翻译：在半导体衬底的选定区域上形成含金属层的方法
公开(公告)号：US20050167280A1
公开(公告)日：2005-08-04
申请号：US11054130
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

5. 发明申请

US20050139481A1 Method of electroplating a substance over a semiconductor substrate 有权
标题翻译：在半导体衬底上电镀物质的方法
公开(公告)号：US20050139481A1
公开(公告)日：2005-06-30
申请号：US11053781
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , H05B3/08
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

6. 发明申请

US20050139479A1 Method of forming a mass over a semiconductor substrate 有权
标题翻译：在半导体衬底上形成质量的方法
公开(公告)号：US20050139479A1
公开(公告)日：2005-06-30
申请号：US11053765
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02 , C25D3/38
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

7. 发明申请

US20060046454A1 Method for filling electrically different features 有权
公开(公告)号：US20060046454A1
公开(公告)日：2006-03-02
申请号：US11075770
申请日：2005-03-09
申请人： Dale Collins , Rita Klein
发明人： Dale Collins , Rita Klein
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/76879
摘要： Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, and semiconductor devices, dies, and systems that incorporate the interconnects and contacts are disclosed. The contact openings are electrically shorted together with a selective material, a nucleation layer is selectively deposited onto the area to be plated (e.g., the base of the opening), and a conductive material is electroless plated onto the nucleation layer to fill the opening. The process achieves substantially simultaneous filling of openings having different surface potentials at an about even rate.

8. 发明申请

US20060046453A1 Method for filling electrically different features 有权
公开(公告)号：US20060046453A1
公开(公告)日：2006-03-02
申请号：US10931822
申请日：2004-09-01
申请人： Dale Collins , Rita Klein
发明人： Dale Collins , Rita Klein
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , H01L21/76879
摘要： Methods of electroless filling electrically different features such as contact openings to form interconnects and conductive contacts, and semiconductor devices, dies, and systems that incorporate the interconnects and contacts are disclosed. The contact openings are electrically shorted together with a selective material, a nucleation layer is selectively deposited onto the area to be plated (e.g., the base of the opening), and a conductive material is electroless plated onto the nucleation layer to fill the opening. The process achieves substantially simultaneous filling of openings having different surface potentials at an about even rate.

9. 发明申请

US20050167279A1 Methods of electrochemically treating semiconductor substrates 有权
标题翻译：电化学处理半导体衬底的方法
公开(公告)号：US20050167279A1
公开(公告)日：2005-08-04
申请号：US11053817
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

10. 发明申请

US20050167278A1 Methods of forming capacitor constructions 有权
标题翻译：形成电容器结构的方法
公开(公告)号：US20050167278A1
公开(公告)日：2005-08-04
申请号：US11053816
申请日：2005-02-08
申请人： Dale Collins , Richard Lane , Rita Klein
发明人： Dale Collins , Richard Lane , Rita Klein
IPC分类号： C25D7/12 , H01L21/02 , H01L21/288 , H01L21/8242 , H01L27/108 , C25D5/02
CPC分类号： H01L27/10852 , H01L21/2885 , H01L27/10808 , H01L27/10817 , H01L28/60 , H01L28/90 , Y10S257/906
摘要： The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括电化学处理半导体衬底的方法。本发明包括电镀物质的方法。提供了具有限定的第一和第二区域的基板。第一和第二区域可以由单个掩模限定，因此可以被认为是相对于彼此自对准的。在第一区域上形成第一导电材料，并且在第二区域上形成第二导电材料。第一和第二导电材料暴露于电解溶液，同时向第一和第二导电材料提供电流。在将第一和第二导电材料暴露于电解液期间，期望的物质选择性地电镀到第一导电材料上。本发明还包括形成电容器结构的方法。

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