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1. 发明申请

US20070131961A1 AlInGaP LED Having Reduced Temperature Dependence 有权
标题翻译：具有降低温度依赖性的AlInGaP LED
公开(公告)号：US20070131961A1
公开(公告)日：2007-06-14
申请号：US11672003
申请日：2007-02-06
申请人： Michael Krames , Nathan Gardner , Frank Steranka
发明人： Michael Krames , Nathan Gardner , Frank Steranka
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

2. 发明申请

US20060220031A1 A1lnGaP LED having reduced temperature dependence 有权
标题翻译： AlInGaP LED具有降低的温度依赖性
公开(公告)号：US20060220031A1
公开(公告)日：2006-10-05
申请号：US11100080
申请日：2005-04-05
申请人： Michael Krames , Nathan Gardner , Frank Steranka
发明人： Michael Krames , Nathan Gardner , Frank Steranka
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

3. 发明申请

US20080023719A1 Light Emitting Devices with Improved Light Extraction Efficiency 有权
标题翻译：具有提高光提取效率的发光装置
公开(公告)号：US20080023719A1
公开(公告)日：2008-01-31
申请号：US11868903
申请日：2007-10-08
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
摘要翻译：提供了具有提高光提取效率的发光器件。发光器件具有包括有源区的半导体层的一叠层。叠层结合到透明光学元件上。

4. 发明授权

US08740413B1 System and method for providing color light sources in proximity to predetermined wavelength conversion structures 有权
标题翻译：用于在预定波长转换结构附近提供彩色光源的系统和方法
公开(公告)号：US08740413B1
公开(公告)日：2014-06-03
申请号：US13328978
申请日：2011-12-16
申请人： Michael Krames , Troy Trottier , Frank Steranka , William Houck , Arpan Chakraborty
发明人： Michael Krames , Troy Trottier , Frank Steranka , William Houck , Arpan Chakraborty
IPC分类号： F21V9/00 , F21V9/16 , F21V21/00 , H01J63/04 , H01L33/00
CPC分类号： H01L33/504 , F21K9/00 , F21K9/232 , F21V29/70 , F21Y2105/10 , F21Y2105/12 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L27/156 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
摘要翻译：光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分第二辐射源。

5. 发明申请

US20050032257A1 Method of forming light emitting devices with improved light extraction efficiency 有权
标题翻译：形成具有改进的光提取效率的发光器件的方法
公开(公告)号：US20050032257A1
公开(公告)日：2005-02-10
申请号：US10938237
申请日：2004-09-10
申请人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
发明人： Michael Camras , Michael Krames , Wayne Snyder , Frank Steranka , Robert Taber , John Uebbing , Douglas Pocius , Troy Trottier , Christopher Lowery , Gerd Mueller , Regina Mueller-Mach , Gloria Hofler
IPC分类号： H01L33/20 , H01L33/40 , H01L33/58 , H01L21/00
CPC分类号： H01L33/58 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/502 , H01L33/62
摘要： A method of bonding a transparent optical element to a light emitting device having a stack of layers including semiconductor layers comprising an active region is provided. The method includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the stack together. In one embodiment, the method also includes disposing a layer of a transparent bonding material between the stack and the optical element. The bonding method can be applied to a premade optical element or to a block of optical element material which is later formed or shaped into an optical element such as a lens or an optical concentrator.
摘要翻译：提供了一种将透明光学元件结合到具有包括包括有源区域的半导体层的层叠层的发光器件的方法。该方法包括升高光学元件和叠层的温度并施加压力以将光学元件和叠层压在一起。在一个实施例中，该方法还包括在叠层和光学元件之间设置透明粘结材料层。接合方法可以应用于预制光学元件或稍后形成或成形为诸如透镜或聚光器的光学元件的光学元件材料块。

6. 发明申请

US20060105478A1 Bonding an optical element to a light emitting device 有权
标题翻译：将光学元件结合到发光器件
公开(公告)号：US20060105478A1
公开(公告)日：2006-05-18
申请号：US10987241
申请日：2004-11-12
申请人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
发明人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
IPC分类号： H01L21/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
摘要翻译：设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。或者，可以使用多个光学元件。光学元件或LED管芯可以用波长转换材料的涂层覆盖。在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

7. 发明申请

US20070145384A1 III-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region 有权
标题翻译：具有双异质结构发光区域的III型氮化物发光器件
公开(公告)号：US20070145384A1
公开(公告)日：2007-06-28
申请号：US11682276
申请日：2007-03-05
申请人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan Gardner , Gangyi Chen , Werner Goetz , Michael Krames , Gerd Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

8. 发明申请

US20060197100A1 Reverse polarization light emitting region for a semiconductor light emitting device 有权
标题翻译：用于半导体发光器件的反向偏振发光区域
公开(公告)号：US20060197100A1
公开(公告)日：2006-09-07
申请号：US11226185
申请日：2005-09-13
申请人： Yu-Chen Shen , Michael Krames , Nathan Gardner
发明人： Yu-Chen Shen , Michael Krames , Nathan Gardner
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/32 , H01L33/16
摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.
摘要翻译：半导体发光器件包括设置在n型区域和p型区域之间的发光层。发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

9. 发明申请

US20070069225A1 III-V light emitting device 审中-公开
标题翻译： III-V发光装置
公开(公告)号：US20070069225A1
公开(公告)日：2007-03-29
申请号：US11237215
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L21/2654 , H01L21/76254 , H01L33/0075 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

10. 发明申请

US20060284187A1 Grown photonic crystals in semiconductor light emitting devices 有权
公开(公告)号：US20060284187A1
公开(公告)日：2006-12-21
申请号：US11156105
申请日：2005-06-17
申请人： Jonathan Wierer , Michael Krames , Nathan Gardner
发明人： Jonathan Wierer , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

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