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1. 发明申请

US20070072324A1 Substrate for growing a III-V light emitting device 有权
标题翻译：用于生长III-V发光器件的衬底
公开(公告)号：US20070072324A1
公开(公告)日：2007-03-29
申请号：US11237164
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L21/00 , H01G9/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

2. 发明申请

US20050205884A1 Semiconductor light emitting devices including in-plane light emitting layers 失效
标题翻译：包括平面内发光层的半导体发光器件
公开(公告)号：US20050205884A1
公开(公告)日：2005-09-22
申请号：US10805424
申请日：2004-03-19
申请人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
发明人： Jarnes Kim , John Epler , Nathan Gardner , Michael Krames , Jonathan Wierer
IPC分类号： G02B5/30 , H01L33/10 , H01L33/18 , H01L33/32 , H01L33/40 , H01L33/46 , H01S5/183 , H01S5/323 , H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译：半导体发光器件包括发射线偏振光的面内有源区域。面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。

3. 发明申请

US20070069225A1 III-V light emitting device 审中-公开
标题翻译： III-V发光装置
公开(公告)号：US20070069225A1
公开(公告)日：2007-03-29
申请号：US11237215
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L21/2654 , H01L21/76254 , H01L33/0075 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

4. 发明申请

US20060202215A1 Polarization-reversed III-nitride light emitting device 有权
标题翻译：极化反转的III族氮化物发光器件
公开(公告)号：US20060202215A1
公开(公告)日：2006-09-14
申请号：US11080022
申请日：2005-03-14
申请人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
发明人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译：器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。键合界面设置在两个表面之间，其中一个表面是器件结构的表面。结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。

5. 发明申请

US20060014310A1 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 审中-公开
标题翻译：通过生长衬底去除制造的谐振腔III族氮化物发光器件
公开(公告)号：US20060014310A1
公开(公告)日：2006-01-19
申请号：US11227416
申请日：2005-09-14
申请人： John Epler , Michael Krames , Jonathan Wierer
发明人： John Epler , Michael Krames , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译：半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。空腔的顶表面和底表面都可以具有粗糙的表面。例如，表面可以具有由多个谷分隔的多个峰。在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。

6. 发明申请

US20060240585A1 Package-Integrated Thin Film LED 有权
标题翻译：封装集成薄膜LED
公开(公告)号：US20060240585A1
公开(公告)日：2006-10-26
申请号：US11421350
申请日：2006-05-31
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译：在衬底上生长LED外延层（n型，p型和有源层）。对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。封装衬底提供电触头和导体，导致可焊接的封装连接。然后除去生长底物。因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

7. 发明申请

US20060091409A1 Package-integrated thin film LED 有权
公开(公告)号：US20060091409A1
公开(公告)日：2006-05-04
申请号：US10977294
申请日：2004-10-28
申请人： John Epler , Paul Martin , Michael Krames
发明人： John Epler , Paul Martin , Michael Krames
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

8. 发明申请

US20060163606A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060163606A1
公开(公告)日：2006-07-27
申请号：US11373636
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

9. 发明申请

US20050205883A1 Photonic crystal light emitting device 审中-公开
标题翻译：光子晶体发光装置
公开(公告)号：US20050205883A1
公开(公告)日：2005-09-22
申请号：US10804810
申请日：2004-03-19
申请人： Jonathan Wierer , Michael Krames , John Epler
发明人： Jonathan Wierer , Michael Krames , John Epler
IPC分类号： H01L33/00 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译：在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。在与有源区相对的p型区域的表面上形成反射体。在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成在光子晶体下面的p型区域的表面上的反射器。光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

10. 发明申请

US20070096130A1 LED Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate 有权
标题翻译：具有最大金属支持的LED组件用于生长衬底的激光剥离
公开(公告)号：US20070096130A1
公开(公告)日：2007-05-03
申请号：US11611775
申请日：2006-12-15
申请人： Stefano Schiaffino , Daniel Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
发明人： Stefano Schiaffino , Daniel Steigerwald , Mari Holcomb , Grigoriy Basin , Paul Martin , John Epler
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

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