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    • 2. 发明申请
    • Method for achieving wafer contact for electro-processing
    • 用于实现电加工的晶片接触的方法
    • US20050037620A1
    • 2005-02-17
    • US10641811
    • 2003-08-15
    • Michael BermanSteven Reder
    • Michael BermanSteven Reder
    • C25D7/12C25D17/06H01L21/288H01L21/321H01L21/326
    • H01L21/2885C25D7/123C25D17/001C25D17/005C25D17/06H01L21/32115
    • A conductive type of seed or process film is used to cover the front side, the side, and at least a portion of the back side of a semiconductor wafer. The portion of the film which is on the back side of the wafer acts as contact for the electro-plating or electro-polishing process, thereby obviating the need for any front side contact. During the electro-process, the wafer can be positioned on a backing plate which supports the wafer as well as contacts which engage at least a portion of the conductive layer on the back side of the wafer. In depositing the conductive seed or process film, the wafer is positioned on a pedestal which has a diameter that is smaller than a diameter of the wafer. The difference in the pedestal and wafer diameters then becomes the area where the conductive seed or process film covers the back side of the wafer. The conductive film can be easily removed during subsequent wafer processing.
    • 使用导电类型的种子或处理膜来覆盖半导体晶片的正面,侧面和背面的至少一部分。 位于晶片背面的薄膜的部分作为电镀或电抛光工艺的接触,从而避免了任何前侧接触的需要。 在电工艺期间,晶片可以定位在支撑晶片的背板上,以及与晶片背面上的导电层的至少一部分接合的触点。 在沉积导电种子或处理膜时,将晶片定位在直径小于晶片直径的基座上。 基座和晶片直径之间的差异成为导电种子或处理膜覆盖晶片背面的区域。 导电膜可以在随后的晶片处理期间容易地去除。
    • 5. 发明申请
    • Abrasive electrolyte
    • 磨料电解液
    • US20050087451A1
    • 2005-04-28
    • US10693143
    • 2003-10-24
    • Michael BermanSteven Reder
    • Michael BermanSteven Reder
    • B23H5/08C25F3/02B23H3/08
    • B23H5/08C25F3/02
    • An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.
    • 一种研磨电解质溶液,适用于在基材上稀释一层而不污染基材。 磨蚀性电解质溶液包括导电流体,其基本上不含在期望的工作电压电势范围内是反应性的材料,并且基本上不含在期望的工作电压电势范围内抑制所需反应的材料。 还包括具有足够小以使颗粒基本上保持悬浮在导电流体中的尺寸的磨料颗粒,并且足够大以使颗粒在研磨电解质上提供所需层的侵蚀 溶液被迫靠在基底上的层上。
    • 8. 发明申请
    • Electropolishing pad
    • 电抛光垫
    • US20050087450A1
    • 2005-04-28
    • US10693142
    • 2003-10-24
    • Steven RederMichael Berman
    • Steven RederMichael Berman
    • B23H3/00B23H5/08C25F3/02
    • C25F3/02B23H5/08
    • An electropolishing pad adapted for thinning a layer on a substrate, without damaging a delicate underlying layer in the substrate. The electropolishing pad includes a pad formed of an electrically conductive material, for applying a desired voltage potential through the electropolishing pad to electrolytically erode the layer on the substrate. An operating surface on the pad physically erodes the layer on the substrate. The operating surface has a roughness that is not so great as to create friction sufficient to induce a shearing force that damages the delicate underlying layer in the substrate, but great enough so as to physically erode the layer on the substrate.
    • 一种电抛光垫,其适于使基底上的层变薄,而不会损坏基底中的精细的下层。 电抛光垫包括由导电材料形成的焊盘,用于通过电抛光垫施加期望的电压电位以电解侵蚀基板上的层。 垫上的操作表面物理地侵蚀基底上的层。 操作表面的粗糙度不大,以致于产生足以引起剪切力的摩擦力,该剪切力破坏了衬底中精细的下层,但足够大,以便物理地侵蚀衬底上的层。
    • 9. 发明授权
    • Method to monitor pad wear in CMP processing
    • 在CMP处理中监测焊盘磨损的方法
    • US07198546B2
    • 2007-04-03
    • US10879629
    • 2004-06-29
    • Michael BermanSteven RederMatthew R. Trattles
    • Michael BermanSteven RederMatthew R. Trattles
    • B24B49/00
    • B24B55/00B24B37/04B24B49/10B24B49/12
    • A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.
    • 衬垫槽分析器和相关联的方法被配置为评估衬垫上的凹槽并确定衬垫的磨损程度。 垫槽分析器可以被配置为通过接触或非接触过程来监测凹槽。 在接触处理中,垫槽分析器可以包括物理接触并沿着垫移动的触笔。 当触控笔沿着焊盘移动时,触针落入焊盘中的凹槽中,产生信号,并且触针监视器使用信号来确定焊盘在多大程度上被磨损。 触控笔监视器可以配置为与通用工具控制器进行通信。 在无接触过程中,焊盘槽分析仪可以采取几种不同的形式。
    • 10. 发明申请
    • Abrasive Electrolyte
    • 磨料电解液
    • US20060219572A1
    • 2006-10-05
    • US11423686
    • 2006-06-12
    • Michael BermanSteven Reder
    • Michael BermanSteven Reder
    • B23H3/00
    • B23H5/08C25F3/02
    • An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.
    • 一种研磨电解质溶液,适用于在基材上稀释一层而不污染基材。 磨蚀性电解质溶液包括导电流体,其基本上不含在期望的工作电压电势范围内是反应性的材料,并且基本上不含在期望的工作电压电势范围内抑制所需反应的材料。 还包括具有足够小以使颗粒基本上保持悬浮在导电流体中的尺寸的磨料颗粒,并且足够大以使颗粒在研磨电解质上提供所需层的侵蚀 溶液被迫靠在基底上的层上。