会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
    • 用于平面化微电子衬底组件的Web格式平面化机器和方法
    • US06306014B1
    • 2001-10-23
    • US09613654
    • 2000-07-11
    • Michael A. WalkerScott E. Moore
    • Michael A. WalkerScott E. Moore
    • B24B100
    • B24B37/20B24B21/04B24B21/20B24B37/26
    • Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped. The planarizing machine can further include a carrier assembly having a head and a drive system to translate the substrate assembly across an active section of the polishing pad in the planarizing zone. The planarizing machine further includes a pad tensioning system between the planarizing zone of the table and either the first roller or the second roller. The tensioning system, for example, can have a pneumatic or mechanical stretching assembly configured to push or pull the medial region of the pad more than the first and second side regions to compensate for the smaller diameter of the used portion of the pad wrapped around the second roller.
    • 用于使用机械和/或化学机械平面化工艺平面化微电子衬底组件的方法和机器。 根据本发明的实施例的一台机器包括具有平坦化区域的支撑表面的台面,被配置成沿着垫移动路径跨越工作台的支撑表面移动的细长抛光垫,以及联接到 垫。 细长垫可以具有沿着衬垫行进路径延伸的细长尺寸的长度,细长的第一边缘,与第一边缘相对的细长的第二边缘,沿着第一边缘延伸的细长的第一侧区域,沿着第一边缘延伸的细长的第二侧面区域 第二边缘,以及在第一和第二侧区域之间具有宽度的细长的中间区域。 衬垫推进机构可以包括第一辊,衬垫的未使用部分围绕第一辊和第二辊,衬垫的使用部分围绕第二辊被包裹。 平面化机器还可以包括具有头部和驱动系统的托架组件,以便在平坦化区域中平移衬底组件跨过抛光垫的有效部分。 平面化机还包括在工作台的平坦化区与第一辊或第二辊之间的垫张紧系统。 例如,张紧系统可以具有气动或机械拉伸组件,其构造成比第一和第二侧区域推或拉推动衬垫的中间区域,以补偿围绕着第二侧区域的垫的使用部分的较小直径 第二辊。
    • 2. 发明授权
    • Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
    • US06419560B2
    • 2002-07-16
    • US09965298
    • 2001-09-26
    • Michael A. WalkerScott E. Moore
    • Michael A. WalkerScott E. Moore
    • B24B100
    • B24B37/20B24B21/04B24B21/20B24B37/26
    • Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped. The planarizing machine can further include a carrier assembly having a head and a drive system to translate the substrate assembly across an active section of the polishing pad in the planarizing zone. The planarizing machine further includes a pad tensioning system between the planarizing zone of the table and either the first roller or the second roller. The tensioning system, for example, can have a pneumatic or mechanical stretching assembly configured to push or pull the medial region of the pad more than the first and second side regions to compensate for the smaller diameter of the used portion of the pad wrapped around the second roller.
    • 3. 发明授权
    • Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
    • US06428404B2
    • 2002-08-06
    • US09957112
    • 2001-09-19
    • Michael A. WalkerScott E. Moore
    • Michael A. WalkerScott E. Moore
    • B24B2100
    • B24B37/20B24B21/04B24B21/20B24B37/26
    • Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped. The planarizing machine can further include a carrier assembly having a head and a drive system to translate the substrate assembly across an active section of the polishing pad in the planarizing zone. The planarizing machine further includes a pad tensioning system between the planarizing zone of the table and either the first roller or the second roller. The tensioning system, for example, can have a pneumatic or mechanical stretching assembly configured to push or pull the medial region of the pad more than the first and second side regions to compensate for the smaller diameter of the used portion of the pad wrapped around the second roller.
    • 4. 发明授权
    • Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
    • 用于平面化微电子衬底组件的Web格式平面化机器和方法
    • US06402601B2
    • 2002-06-11
    • US09907834
    • 2001-07-17
    • Michael A. WalkerScott E. Moore
    • Michael A. WalkerScott E. Moore
    • B24B2100
    • B24B37/20B24B21/04B24B21/20B24B37/26
    • Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped. The planarizing machine can further include a carrier assembly having a head and a drive system to translate the substrate assembly across an active section of the polishing pad in the planarizing zone. The planarizing machine further includes a pad tensioning system between the planarizing zone of the table and either the first roller or the second roller. The tensioning system, for example, can have a pneumatic or mechanical stretching assembly configured to push or pull the medial region of the pad more than the first and second side regions to compensate for the smaller diameter of the used portion of the pad wrapped around the second roller.
    • 用于使用机械和/或化学机械平面化工艺平面化微电子衬底组件的方法和机器。 根据本发明的实施例的一台机器包括具有平坦化区域的支撑表面的台面,被配置成沿着垫移动路径跨越工作台的支撑表面移动的细长抛光垫,以及联接到 垫。 细长垫可以具有沿着衬垫行进路径延伸的细长尺寸的长度,细长的第一边缘,与第一边缘相对的细长的第二边缘,沿着第一边缘延伸的细长的第一侧区域,沿着第一边缘延伸的细长的第二侧面区域 第二边缘,以及在第一和第二侧区域之间具有宽度的细长的中间区域。 衬垫推进机构可以包括第一辊,衬垫的未使用部分围绕第一辊和第二辊,衬垫的使用部分围绕第二辊被包裹。 平面化机器还可以包括具有头部和驱动系统的托架组件,以便在平坦化区域中平移衬底组件跨过抛光垫的有效部分。 平面化机还包括在工作台的平坦化区与第一辊或第二辊之间的垫张紧系统。 例如,张紧系统可以具有气动或机械拉伸组件,其构造成比第一和第二侧区域推或拉推动衬垫的中间区域,以补偿围绕着第二侧区域的垫的使用部分的较小直径 第二辊。
    • 5. 发明授权
    • Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
    • US06261163B1
    • 2001-07-17
    • US09385985
    • 1999-08-30
    • Michael A. WalkerScott E. Moore
    • Michael A. WalkerScott E. Moore
    • B24B2100
    • B24B37/20B24B21/04B24B21/20B24B37/26
    • Methods and machines for planarizing microelectronic substrate assemblies using mechanical and/or chemical-mechanical planarizing processes. One machine in accordance with an embodiment of the invention includes a table having a support surface with a planarizing zone, an elongated polishing pad configured to move across the support surface of the table along a pad travel path, and a pad advancing mechanism coupled to the pad. The elongated pad can have a length along an elongated dimension extending along the pad travel path, an elongated first edge, an elongated second edge opposite the first edge, an elongated first side region extending along the first edge, an elongated second side region extending along the second edge, and an elongated medial region having a width between the first and second side regions. The pad advancing mechanism can include a first roller about which an unused portion of the pad is wrapped and a second roller about which a used portion of the pad is wrapped. The planarizing machine can further include a carrier assembly having a head and a drive system to translate the substrate assembly across an active section of the polishing pad in the planarizing zone. The planarizing machine further includes a pad tensioning system between the planarizing zone of the table and either the first roller or the second roller. The tensioning system, for example, can have a pneumatic or mechanical stretching assembly configured to push or pull the medial region of the pad more than the first and second side regions to compensate for the smaller diameter of the used portion of the pad wrapped around the second roller.
    • 7. 再颁专利
    • Optimized container stacked capacitor dram cell utilizing sacrificial oxide deposition and chemical mechanical polishing
    • 利用牺牲氧化物沉积和化学机械抛光优化容器堆叠电容器电容器
    • USRE38049E1
    • 2003-03-25
    • US08759058
    • 1996-10-07
    • Charles H. DennisonMichael A. Walker
    • Charles H. DennisonMichael A. Walker
    • H01L2120
    • H01L28/91
    • An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.
    • 修改现有的堆叠电容器制造工艺以构建三维堆叠容器电容器。 本发明通过将开口(或接触开口)蚀刻成低蚀刻速率氧化物来开发容器电容器。 接触开口用作与开口壁的侧面一致的沉积多晶硅的形式。 在氧化物容器的薄多孔衬里内,在整个结构上沉积诸如臭氧TEOS的高蚀刻速率氧化物,从而桥接穿过氧化物容器的顶部。 将高蚀刻速率的氧化物平面化回到薄的多晶硅上,然后除去所得到的暴露的聚合物以分离相邻的容器。 然后蚀刻具有不同蚀刻速率的两种氧化物,从而留下独立的多容器电池,其具有100%(或全部)更高蚀刻速率的氧化物,并且包围容器的预定氧化物仍然完整。
    • 8. 发明授权
    • Treatment of exposed silicon and silicon dioxide surfaces
    • 处理暴露的硅和二氧化硅表面
    • US06521534B1
    • 2003-02-18
    • US09639369
    • 2000-08-15
    • Karl M. RobinsonMichael A. Walker
    • Karl M. RobinsonMichael A. Walker
    • H01L21302
    • H01L21/02052B08B3/08C11D7/06C11D7/08C11D11/0047H01L21/67051H01L21/67057
    • A chemical mechanical polishing step is performed to expose a silicon/silicon dioxide interface on a surface situated on a semiconductor substrate. The semiconductor substrate is dipped in a solution of about 200 parts of deionized water, about 1 part of hydrofluoric acid, and at least 5 parts tetramethyl ammonium hydroxide. The exposed silicon/silicon dioxide interface is then contacted with an organic carboxylic acid surfactant having a critical micelle concentration greater than or equal to 1−7 m/l and having a pH from about 2.2 to about 7. Lastly, the exposed silicon/silicon dioxide interface is rinsed in deionized water or sulfuric acid to remove silicon dioxide particles from the exposed silicon/silicon dioxide interface, leaving a very clean, low particulate surface on both the silicon dioxide and silicon portions thereof, with little or no etching of the silicon portion.
    • 进行化学机械抛光步骤以暴露位于半导体衬底上的表面上的硅/二氧化硅界面。 将半导体衬底浸入约200份去离子水,约1份氢氟酸和至少5份氢氧化四甲基铵溶液中。 然后暴露的硅/二氧化硅界面与具有大于或等于1-7m / l的临界胶束浓度并且具有约2.2至约7的pH的有机羧酸表面活性剂接触。最后,暴露的硅/硅 二氧化硅界面在去离子水或硫酸中漂洗以从暴露的硅/二氧化硅界面中除去二氧化硅颗粒,在其二氧化硅和硅部分上留下非常干净的低颗粒表面,几乎没有或没有蚀刻硅 一部分。
    • 10. 发明授权
    • Polishing pad and system
    • 抛光垫和系统
    • US06277015B1
    • 2001-08-21
    • US09300007
    • 1999-04-26
    • Karl M. RobinsonMichael A. Walker
    • Karl M. RobinsonMichael A. Walker
    • B24D1100
    • B24B37/26B24B41/047
    • The present invention comprises a method of chemical-mechanical polishing of a surface on a semiconductor substrate by providing a fixed-abrasive polishing pad; providing a surface to be polished; and providing a chemical polishing solution containing a surface tension-lowering agent that lowers the surface tension of the solution from the nominal surface tension of water to a surface tension that sufficiently wets a hydrophobic surface to be polished such that chemical-mechanical polishing is accomplished. The present invention also comprises pad improvements that mechanically sweep the polishing solution under the pad or that receive polishing solution from the back of the pad such that a tangential and radial shear is placed on the polishing solution as it flows away from the pad.
    • 本发明包括通过提供固定研磨抛光垫对半导体衬底上的表面进行化学机械抛光的方法; 提供要抛光的表面; 并且提供含有表面张力降低剂的化学抛光溶液,其将溶液的表面张力从水的标称表面张力降低到充分润湿要抛光的疏水表面的表面张力,从而实现化学机械抛光。 本发明还包括垫片改进,其将抛光溶液机械地扫过垫片下方或者从垫的背面接收抛光溶液,使得当抛光溶液从衬垫流出时,切向和径向剪切被放置在抛光溶液上。