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    • 3. 发明授权
    • Chemical mechanical polishing pad
    • 化学机械抛光垫
    • US06648743B1
    • 2003-11-18
    • US09946253
    • 2001-09-05
    • Peter A. Burke
    • Peter A. Burke
    • B24D1100
    • B24B37/26
    • A polishing pad for use in chemical mechanical polishing of a semiconductor substrate is described. The polishing pad comprises a substantially flat disk having a polishing surface for contacting the substrate. The polishing surface, which has a central region and a peripheral region, is segmented by a set of substantially parallel linear grooves. The grooves include central grooves which traverse the central region of the polishing surface, and peripheral grooves which traverse the peripheral region of the polishing surface. The central grooves have central groove dimensions, including a central groove width and pitch. The peripheral grooves have peripheral groove dimensions, including a peripheral groove width and pitch. At least one of the central groove dimensions, i.e. the width or the pitch, is different from the corresponding peripheral groove dimension. This difference in groove dimensions from the center to the edge of the polishing surface introduces a difference in the polishing surface area provided near the peripheral region as compared to the central region of the pad. As the polishing pad spins in relation to the substrate being processed, the variation in polishing surface area across the polishing surface results in a difference in the rate of material removal near the periphery of the substrate as compared to the rate of material removal near the substrate center. Thus, by providing a variation in the width or pitch of the grooves across the polishing surface of the pad, the invention provides for a corresponding radial variation in the polishing rate distribution across the polishing surface.
    • 描述了用于半导体衬底的化学机械抛光的抛光垫。 抛光垫包括具有用于接触基底的抛光表面的基本平坦的盘。 具有中心区域和周边区域的抛光表面被一组基本平行的直线槽分割。 凹槽包括穿过研磨表面的中心区域的中心凹槽和横过研磨表面的周边区域的周向槽。 中心槽具有中心槽尺寸,包括中心槽宽度和间距。 周边槽具有周边槽尺寸,包括周边槽宽度和间距。 中心槽尺寸中的至少一个,即宽度或间距,与相应的外围槽尺寸不同。 与抛光表面的中心到边缘的槽尺寸的这种差异引起了与衬垫的中心区域相比在外围区域附近提供的抛光表面区域的差异。 当抛光垫相对于被处理的基板旋转时,抛光表面的抛光表面面积的变化导致与衬底附近的材料去除速率相比,衬底周边附近的材料去除率差异 中央。 因此,通过在焊盘的抛光表面上提供槽的宽度或间距的变化,本发明提供了穿过抛光表面的抛光速率分布的对应的径向变化。
    • 4. 发明授权
    • Finishing pad design for multidirectional use
    • 整理垫设计用于多方向使用
    • US06602123B1
    • 2003-08-05
    • US10243879
    • 2002-09-13
    • Markus Naujok
    • Markus Naujok
    • B24D1100
    • B24B37/24
    • A polishing pad (for example, polishing pad 305) for use in polarization of a semiconductor wafer (for example, semiconductor wafer 420), the polishing pad 305 featuring a plurality of different polishing surfaces, depending upon the direction of the movement of the polishing pad 305. The polishing pad 305 may take the form of a polishing disc or a polishing belt. The polarization of the semiconductor wafer 420 can then take place at a fewer number of polishing stations, thereby reducing the amount of time needed and reducing the probability of damage to the semiconductor wafer 420.
    • 用于半导体晶片(例如,半导体晶片420)的偏振的抛光垫(例如,抛光垫305),具有多个不同抛光表面的抛光垫305,其取决于抛光的移动方向 抛光垫305可以采取抛光盘或抛光带的形式。 然后半导体晶片420的极化可以在较少数量的抛光站进行,从而减少所需的时间量并降低对半导体晶片420的损坏概率。
    • 9. 再颁专利
    • Polishing pad with controlled abrasion rate
    • 抛光垫具有受控的磨损率
    • USRE37997E1
    • 2003-02-18
    • US08624783
    • 1996-03-27
    • Mark E. Tuttle
    • Mark E. Tuttle
    • B24D1100
    • B24D11/00B24B7/228B24B13/01B24B37/26
    • A polishing pad is provided, having its face shaped to produce controlled nonuniform removal of material from a workpiece. Non-uniformity is produced as a function of distance from the pad's rotational axis (the working radius). The pad face is configured with both raised, contact regions and voided, non-contact regions such that arcuate abrasive contact varies nonuniformly as a function of distance from the pad's rotational axis. Void density at any distance may be produced by several techniques such as varying void size as a function of working radius or varying the number of voids per unit area as a function of working radius. Either technique produces variation in voided area per total unit area for rings of pad surface concentric with the rotational axis having infintesimally small width.
    • 提供了一种抛光垫,其表面形状可以从工件上产生受控的不均匀的材料去除。 产生与衬垫旋转轴距离(工作半径)的函数的不均匀性。 衬垫面配置有凸起,接触区域和空隙的非接触区域,使得弧形磨料接触作为距衬垫旋转轴线的距离的函数不均匀地变化。 任何距离处的空隙密度可以通过几种技术产生,例如作为工作半径的函数改变空隙尺寸或者改变作为工作半径的函数的每单位面积的空隙数。 任一技术产生与具有正面小的宽度的旋转轴线同心的垫表面的环的每单位面积的空隙面积的变化。