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1. 发明授权

US5773464A C-10 epoxy taxanes 失效
标题翻译： C-10环氧紫杉烷
公开(公告)号：US5773464A
公开(公告)日：1998-06-30
申请号：US920451
申请日：1997-08-29
申请人： Michael A. Walker , John F. Kadow
发明人： Michael A. Walker , John F. Kadow
IPC分类号： C07D305/14 , C07D493/10 , A61K31/335 , C07D315/00
CPC分类号： C07D493/10 , C07D305/14
摘要： The present invention concerns novel paclitaxel derivatives, their use as antitumor agents, and pharmaceutical formulations.
摘要翻译：本发明涉及新型紫杉醇衍生物，其用作抗肿瘤剂和药物制剂。

2. 发明授权

US06803378B2 HIV integrase inhibitors 有权
标题翻译： HIV整合酶抑制剂
公开(公告)号：US06803378B2
公开(公告)日：2004-10-12
申请号：US10254365
申请日：2002-09-25
申请人： Michael A. Walker , Timothy D. Johnson , Nicholas A. Meanwell , Jacque Banville
发明人： Michael A. Walker , Timothy D. Johnson , Nicholas A. Meanwell , Jacque Banville
IPC分类号： C07D31700
CPC分类号： C07D213/30 , C07C59/90 , C07C235/28 , C07C235/74 , C07C237/42 , C07C311/51 , C07C2601/02 , C07D213/38 , C07D213/40 , C07D307/52 , C07D317/34 , C07D317/40 , C07D317/46 , C07D317/58 , C07D333/20 , C07D405/12 , C07D407/12
摘要： Novel diketoacid compounds of Formula I are provided which are useful as HIV integrase inhibitors and for the treatment of AIDS or ARC.
摘要翻译：提供式I的新型二酮酸化合物，其可用作HIV整合酶抑制剂和用于治疗AIDS或ARC。

3. 再颁专利

USRE38049E1 Optimized container stacked capacitor dram cell utilizing sacrificial oxide deposition and chemical mechanical polishing 失效
标题翻译：利用牺牲氧化物沉积和化学机械抛光优化容器堆叠电容器电容器
公开(公告)号：USRE38049E1
公开(公告)日：2003-03-25
申请号：US08759058
申请日：1996-10-07
申请人： Charles H. Dennison , Michael A. Walker
发明人： Charles H. Dennison , Michael A. Walker
IPC分类号： H01L2120
CPC分类号： H01L28/91
摘要： An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.
摘要翻译：修改现有的堆叠电容器制造工艺以构建三维堆叠容器电容器。本发明通过将开口（或接触开口）蚀刻成低蚀刻速率氧化物来开发容器电容器。接触开口用作与开口壁的侧面一致的沉积多晶硅的形式。在氧化物容器的薄多孔衬里内，在整个结构上沉积诸如臭氧TEOS的高蚀刻速率氧化物，从而桥接穿过氧化物容器的顶部。将高蚀刻速率的氧化物平面化回到薄的多晶硅上，然后除去所得到的暴露的聚合物以分离相邻的容器。然后蚀刻具有不同蚀刻速率的两种氧化物，从而留下独立的多容器电池，其具有100％（或全部）更高蚀刻速率的氧化物，并且包围容器的预定氧化物仍然完整。

4. 发明授权

US06521534B1 Treatment of exposed silicon and silicon dioxide surfaces 有权
标题翻译：处理暴露的硅和二氧化硅表面
公开(公告)号：US06521534B1
公开(公告)日：2003-02-18
申请号：US09639369
申请日：2000-08-15
申请人： Karl M. Robinson , Michael A. Walker
发明人： Karl M. Robinson , Michael A. Walker
IPC分类号： H01L21302
CPC分类号： H01L21/02052 , B08B3/08 , C11D7/06 , C11D7/08 , C11D11/0047 , H01L21/67051 , H01L21/67057
摘要： A chemical mechanical polishing step is performed to expose a silicon/silicon dioxide interface on a surface situated on a semiconductor substrate. The semiconductor substrate is dipped in a solution of about 200 parts of deionized water, about 1 part of hydrofluoric acid, and at least 5 parts tetramethyl ammonium hydroxide. The exposed silicon/silicon dioxide interface is then contacted with an organic carboxylic acid surfactant having a critical micelle concentration greater than or equal to 1−7 m/l and having a pH from about 2.2 to about 7. Lastly, the exposed silicon/silicon dioxide interface is rinsed in deionized water or sulfuric acid to remove silicon dioxide particles from the exposed silicon/silicon dioxide interface, leaving a very clean, low particulate surface on both the silicon dioxide and silicon portions thereof, with little or no etching of the silicon portion.
摘要翻译：进行化学机械抛光步骤以暴露位于半导体衬底上的表面上的硅/二氧化硅界面。将半导体衬底浸入约200份去离子水，约1份氢氟酸和至少5份氢氧化四甲基铵溶液中。然后暴露的硅/二氧化硅界面与具有大于或等于1-7m / l的临界胶束浓度并且具有约2.2至约7的pH的有机羧酸表面活性剂接触。最后，暴露的硅/硅二氧化硅界面在去离子水或硫酸中漂洗以从暴露的硅/二氧化硅界面中除去二氧化硅颗粒，在其二氧化硅和硅部分上留下非常干净的低颗粒表面，几乎没有或没有蚀刻硅一部分。

5. 发明授权

US06296557B1 Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies 失效
标题翻译：在微电子器件衬底组件的机械和/或化学机械平面化中将抛光垫可释放地附接到平面化机器的方法和装置
公开(公告)号：US06296557B1
公开(公告)日：2001-10-02
申请号：US09285319
申请日：1999-04-02
申请人： Michael A. Walker
发明人： Michael A. Walker
IPC分类号： B24D1100
CPC分类号： B24B37/26 , B24D9/085
摘要： A method and an apparatus for releasably attaching a polishing pad to a support surface under the polishing pad. In one embodiment of the invention, a polishing pad has a first surface for planarizing a substrate assembly, a second surface contacting the support surface, and an interlocking element. The support surface has a retaining member configured to engage the interlocking element on the polishing pad. The interlocking element and retaining member can be any one of several configurations, including: tongue and groove, protuberance and depression, reciprocal elongated ridges, or teeth.
摘要翻译：一种用于将抛光垫可释放地附接到抛光垫下方的支撑表面的方法和装置。在本发明的一个实施例中，抛光垫具有用于平坦化基板组件的第一表面，接触支撑表面的第二表面和互锁元件。支撑表面具有构造成与抛光垫上的互锁元件接合的保持构件。互锁元件和保持构件可以是几种构造中的任何一种，包括：舌和凹槽，凸起和凹陷，往复的细长脊或齿。

6. 发明授权

US06277015B1 Polishing pad and system 有权
标题翻译：抛光垫和系统
公开(公告)号：US06277015B1
公开(公告)日：2001-08-21
申请号：US09300007
申请日：1999-04-26
申请人： Karl M. Robinson , Michael A. Walker
发明人： Karl M. Robinson , Michael A. Walker
IPC分类号： B24D1100
CPC分类号： B24B37/26 , B24B41/047
摘要： The present invention comprises a method of chemical-mechanical polishing of a surface on a semiconductor substrate by providing a fixed-abrasive polishing pad; providing a surface to be polished; and providing a chemical polishing solution containing a surface tension-lowering agent that lowers the surface tension of the solution from the nominal surface tension of water to a surface tension that sufficiently wets a hydrophobic surface to be polished such that chemical-mechanical polishing is accomplished. The present invention also comprises pad improvements that mechanically sweep the polishing solution under the pad or that receive polishing solution from the back of the pad such that a tangential and radial shear is placed on the polishing solution as it flows away from the pad.
摘要翻译：本发明包括通过提供固定研磨抛光垫对半导体衬底上的表面进行化学机械抛光的方法; 提供要抛光的表面; 并且提供含有表面张力降低剂的化学抛光溶液，其将溶液的表面张力从水的标称表面张力降低到充分润湿要抛光的疏水表面的表面张力，从而实现化学机械抛光。本发明还包括垫片改进，其将抛光溶液机械地扫过垫片下方或者从垫的背面接收抛光溶液，使得当抛光溶液从衬垫流出时，切向和径向剪切被放置在抛光溶液上。

7. 发明授权

US06200901B1 Polishing polymer surfaces on non-porous CMP pads 失效
标题翻译：在无孔CMP垫上抛光聚合物表面
公开(公告)号：US06200901B1
公开(公告)日：2001-03-13
申请号：US09095299
申请日：1998-06-10
申请人： Guy F. Hudson , Michael A. Walker
发明人： Guy F. Hudson , Michael A. Walker
IPC分类号： C09K1300
CPC分类号： G03F7/40 , H01L21/31053 , H01L21/31133 , H01L21/31138
摘要： Methods of oxidizing the surface of a photoresist material on a semiconductor substrate to alter the photoresist material surface to be substantially hydrophillic. Oxidation of the photoresist material surface substantially reduces or eliminates stiction between a planarizing pad and the photoresist material surface during chemical mechanical planarization. This oxidation of the photoresist material may be achieved by oxygen plasma etching or ashing, by immersing the semiconductor substrate in a bath containing an oxidizing agent, or by the addition of an oxidizing agent to the chemical slurry used during planarization of the resist material.
摘要翻译：在半导体衬底上氧化光致抗蚀剂材料的表面以将光致抗蚀剂材料表面改变为基本上是亲水的方法。在化学机械平面化期间，光致抗蚀剂材料表面的氧化大大减少或消除了平坦化焊盘和光致抗蚀剂材料表面之间的静摩擦。光致抗蚀剂材料的这种氧化可以通过将半导体衬底浸入含有氧化剂的浴中，或者通过在抗蚀剂材料的平坦化期间使用的化学浆料中加入氧化剂，通过氧等离子体蚀刻或灰化来实现。

8. 发明授权

US6096650A Treatment of a surface having exposed silica 有权
标题翻译：处理具有暴露的二氧化硅的表面
公开(公告)号：US6096650A
公开(公告)日：2000-08-01
申请号：US314870
申请日：1999-05-19
申请人： Karl M. Robinson , Michael A. Walker
发明人： Karl M. Robinson , Michael A. Walker
IPC分类号： B08B3/08 , C11D7/06 , C11D7/08 , C11D11/00 , H01L21/00 , H01L21/306 , H01L21/302 , C23F1/00
CPC分类号： H01L21/02052 , B08B3/08 , C11D11/0047 , C11D7/06 , C11D7/08 , H01L21/67051 , H01L21/67057 , Y10S438/906
摘要： A surface having an exposed silicon/silica interface is cleaned by an HF dip, followed immediately by a rinse in citric acid, followed by a rinse in deionized water. Low pH of the citric acid significantly prevents the formation of a charge differential between the silica and silicon portions of the surface, which charge differential would otherwise cause any silica particles present to remain on the silicon portion of the surface. Surfactant properties of the citric acid help remove any silica particles from the surface. The deionized water rinse then removes the citric acid from the surfaces, leaving a very clean, low particulate surface on both the silica and silicon portions thereof, with little or no etching of the silicon portion.
摘要翻译：具有暴露的硅/二氧化硅界面的表面通过HF浸渍进行清洁，然后立即用柠檬酸冲洗，随后在去离子水中冲洗。柠檬酸的低pH显着地防止在表面的二氧化硅和硅部分之间形成电荷差异，否则电荷差异将导致存在的任何二氧化硅颗粒保留在表面的硅部分上。柠檬酸的表面活性剂有助于从表面除去任何二氧化硅颗粒。去离子水冲洗然后从表面除去柠檬酸，在其二氧化硅和硅部分上留下非常干净的低颗粒表面，硅部分很少蚀刻或不蚀刻。

9. 发明授权

US5893754A Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers 失效
标题翻译：停止特征半导体晶片的化学机械平面化方法
公开(公告)号：US5893754A
公开(公告)日：1999-04-13
申请号：US651896
申请日：1996-05-21
申请人： Karl M. Robinson , Michael A. Walker
发明人： Karl M. Robinson , Michael A. Walker
IPC分类号： B24B37/015 , B24B49/14 , H01L21/304 , H01L21/3105 , H01L21/00
CPC分类号： B24B37/015 , H01L21/31053
摘要： The present invention is a method for chemical-mechanical planariztion of semiconductor wafers that is highly useful for planarazing stop-on-feature design wafers. Initially, the wafer is positioned against a liquid solution over a planarizing surface of a polishing pad. At least one of the wafer or the pad is moved with respect to the other at a relatively low velocity to maintain a substantially continuous film of liquid solution between the wafer and the pad. The temperature of a pad platen is also controlled to maintain a relatively low temperature of the liquid solution at which the solution is highly selective to a layer of material on the wafer.
摘要翻译：本发明是半导体晶片的化学机械平面化方法，其对于平面化停止特征设计晶片是非常有用的。最初，将晶片相对于抛光垫的平坦化表面上的液体溶液定位。晶片或焊盘中的至少一个以相对低的速度相对于另一个移动，以在晶片和焊盘之间维持基本上连续的液体溶液膜。焊盘压板的温度也被控制以保持溶液对晶片上的材料层具有高度选择性的液体溶液的相对较低的温度。

10. 发明授权

US5855804A Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints 失效
标题翻译：用于在期望的端点停止基板的机械和化学机械平面化的方法和装置
公开(公告)号：US5855804A
公开(公告)日：1999-01-05
申请号：US761648
申请日：1996-12-06
申请人： Michael A. Walker
发明人： Michael A. Walker
IPC分类号： B24B37/04 , H01L21/3105 , H01L21/321 , C03C15/02 , C23F1/00
CPC分类号： B24B37/013 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212
摘要： A method and apparatus for forming a planar surface on a substrate at a desired endpoint. In one embodiment of the invention, material is removed from a substrate with an abrasive medium on a planarizing surface. As material is removed from the substrate, the abrasive medium is selectively inhibited from contacting a first exposed area at the desired endpoint on the substrate while it still contacts a second area on the substrate that is not yet at the endpoint. In this embodiment of the invention, therefore, polishing substantially stops at the first area on the substrate but continues at the second area on the substrate.
摘要翻译：一种用于在所需端点处在衬底上形成平面表面的方法和装置。在本发明的一个实施方案中，在平坦化表面上用研磨介质从衬底上去除材料。当从衬底移除材料时，磨料介质被选择性地禁止接触衬底上所需端点处的第一暴露区域，同时其仍接触到还没有在端点处的衬底上的第二区域。因此，在本发明的该实施例中，抛光基本上停留在基板上的第一区域上，但在基板上的第二区域继续。

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