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1. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

2. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

3. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

4. 发明授权

US5843802A Semiconductor laser formed by layer intermixing 失效
标题翻译：半导体激光由层间混合形成
公开(公告)号：US5843802A
公开(公告)日：1998-12-01
申请号：US923092
申请日：1997-09-04
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.
摘要翻译：一种用于制造诸如激光器的多层半导体器件的方法，其使用杂质诱导或空穴增强的半导体层的混合来选择性地使器件中的量子阱区域失活。

5. 发明授权

US5708674A Semiconductor laser or array formed by layer intermixing 失效
标题翻译：半导体激光器或由层间混合形成的阵列
公开(公告)号：US5708674A
公开(公告)日：1998-01-13
申请号：US367554
申请日：1995-01-03
申请人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
发明人： Kevin J. Beernink , Robert L. Thornton , David P. Bour , Thomas L. Paoli , Jack Walker
IPC分类号： H01S5/00 , H01L21/18 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/34 , H01S5/4043 , H01S5/3413 , H01S5/3414 , H01S5/3432 , H01S5/34326 , H01S5/4087
摘要： A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effectively inactivating quantum wells which have transition wavelengths longer than that desired in the selected portion of the device. The quantum wells are inactivated by intermixing them with the surrounding high band gap semiconductor layers. To accomplish this intermixing without affecting the active layer in nearby regions, a finite source of impurity inducing or promoting intermixing is located in proximity to the quantum well to be intermixed, and the sample is annealed under conditions which allow for lateral patterning of the impurity-induced intermixing. Alternatively, the body is capped over the quantum well to be inactivated with a material which induces vacancies in semi-conductive material during thermal annealing, thus promoting vacancy-enhanced intermixing of the undesired quantum well. The intermixing can also be brought about by patterned annealing or selective laser heating which produces local annealing, or by use of two different caps. For the index-guided laser diode, the flanking index-guiding regions are formed by IILD from a buried impurity source, in which surface conditions are controlled to promote impurity diffusion to the flanking regions but not to the active stripe region between the flanking regions.
摘要翻译：用于由IILD或包含具有量子阱的堆叠半导电有源层的多波长激光器阵列形成的折射率引导激光二极管的制造工艺和若干结构。通过有效地使具有比器件所选部分中所需要的转换波长更长的量子阱来激活激光波长。量子阱通过将它们与周围的高带隙半导体层混合而失活。为了实现这种混合而不影响附近区域中的有源层，杂质诱导或促进混合的有限源位于量子阱附近，以便混合，并且样品在允许杂质 - 诱导混合。或者，通过在热退火期间在半导电材料中引起空位的材料将物体盖在量子阱上以使其失活，从而促进不期望的量子阱的空位增强的混合。混合还可以通过图案化退火或选择性激光加热产生局部退火，或通过使用两个不同的盖来实现。对于折射率引导激光二极管，侧翼引导区域由埋藏杂质源的IILD形成，其中控制表面条件以促进杂质扩散到侧翼区域而不是侧向区域之间的有源条纹区域。

6. 发明授权

US06816528B1 Method and structure for nitride based laser diode arrays on a conducting substrate 有权
标题翻译：导电衬底上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06816528B1
公开(公告)日：2004-11-09
申请号：US09224254
申请日：1998-12-30
申请人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/02276 , H01S5/0425 , H01S5/18 , H01S5/4031
摘要： Method and structure for nitride-based laser diode arrays on a conducting substrate are disclosed. Air-bridge structures are used to make compact laser diode arrays suitable for printer applications. The use of a channel structure architecture allows the making of surface emitting laser diode arrays.
摘要翻译：公开了一种导电衬底上基于氮化物的激光二极管阵列的方法和结构。空气桥结构用于制造适用于打印机应用的紧凑型激光二极管阵列。使用通道结构架构允许制造表面发射激光二极管阵列。

7. 发明授权

US5717707A Index guided semiconductor laser diode with reduced shunt leakage currents 失效
标题翻译：具有降低分流漏电流的折射率半导体激光二极管
公开(公告)号：US5717707A
公开(公告)日：1998-02-10
申请号：US367549
申请日：1995-01-03
申请人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
发明人： Kevin J. Beernink , David P. Bour , Thomas L. Paoli , Ross D. Bringans , Gregory J. Kovacs
IPC分类号： H01S5/00 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/204 , H01S5/2059 , H01S5/227 , H01S5/3413
摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of AlInP, GaInP and AlGaInP heterostructures. Several techniques for reducing parasitic leakage current via the n-type IILD regions, are described. These include removing the upper portions of the material outside the laser stripe, which can be accomplished by wet or dry etching of the material in a self-aligned manner. As an alternative, after formation of the waveguide, appropriately doped layers are grown over the disordered and as-grown regions of the structure to contact the active waveguide and simultaneously block parasitic shunt current from the disordered regions. Another method provides shallow inset insulating regions to replace the n-type disordered regions at the vicinity of a cap layer used to reduce a current barrier.
摘要翻译：由AlInP，GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率半导体激光二极管。描述了通过n型IILD区域减少寄生漏电流的几种技术。这些包括去除激光条外部材料的上部，这可以通过以自对准的方式湿法或干蚀刻材料来实现。作为替代方案，在形成波导之后，在结构的无序和生长区域上生长适当掺杂的层以接触有源波导并同时阻挡来自无序区域的寄生并联电流。另一种方法提供浅插入绝缘区域来代替用于减少电流屏障的盖层附近的n型无序区域。

8. 发明授权

US5438584A Dual polarization laser diode with quaternary material system 失效
标题翻译：具有四元材料系统的双极化激光二极管
公开(公告)号：US5438584A
公开(公告)日：1995-08-01
申请号：US173812
申请日：1993-12-23
申请人： Thomas L. Paoli , David P. Bour
发明人： Thomas L. Paoli , David P. Bour
IPC分类号： H01S5/028 , H01S5/06 , H01S5/062 , H01S5/10 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/103
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/4031 , H01S5/028 , H01S5/0602 , H01S5/0612 , H01S5/06236 , H01S5/1039 , H01S5/3403 , H01S5/3404 , H01S5/34326
摘要： A semiconductor laser source using a strained active layer of GaAsP or InGaAsP or AlGaAsP to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range of 600-870 nm. Preferably, the active layer is flanked by confining layers of AlGaAs or (AlGa).sub.0.52 In.sub.0.48 P. The active layer under proper conditions can also emit TE-polarized light. Hence, arrays of side-by-side orthoginally-polarized emitters, or switchable polarized emitters are feasible.
摘要翻译：使用GaAsP或InGaAsP或AlGaAsP的应变有源层的半导体激光源获得在600-870nm的波长范围内发射TM偏振光的半导体激光源。优选地，有源层的侧面是AlGaAs或（AlGa）0.52In0.48P的限制层。在适当条件下的有源层也可以发射TE偏振光。因此，并排的正原子极化发射器阵列或可切换的极化发射极是可行的。

9. 发明授权

US5412678A Multi-beam, orthogonally-polarized emitting monolithic quantum well lasers 失效
标题翻译：多光束正交极化发射单片量子阱激光器
公开(公告)号：US5412678A
公开(公告)日：1995-05-02
申请号：US948524
申请日：1992-09-22
申请人： David W. Treat , David P. Bour , Thomas L. Paoli
发明人： David W. Treat , David P. Bour , Thomas L. Paoli
IPC分类号： H01S5/00 , H01S5/06 , H01S5/062 , H01S5/065 , H01S5/10 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/103 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/4031 , H01S5/0602 , H01S5/0612 , H01S5/06236 , H01S5/1039 , H01S5/3403 , H01S5/3404 , H01S5/34326
摘要： A QW diode laser generating orthogonally polarized multiple beams. The device incorporates quantum well active regions capable of, transitions to heavy hole and light hole band edges. The heavy hole transition provides TE-mode gain, while the light hole band provides mostly TM-mode gain. By controlling the compositions and thicknesses of the active regions, both modes can be obtained in a monolithic structure. In addition, the resulting laser polarization will be very sensitive to the threshold carrier density. With an intracavity loss modulator in such a structure, the polarization can also be controlled. Other ways of causing side-by-side lasers to operate, respectively, in their TE or TM modes are also described.
摘要翻译：产生正交极化多光束的QW二极管激光器。该器件结合量子阱有源区域，能够过渡到重孔和光孔带边缘。重孔跃迁提供TE模式增益，而光孔频带主要提供TM模式增益。通过控制活性区域的组成和厚度，可以在整体结构中获得两种模式。此外，所得到的激光偏振将对阈值载波密度非常敏感。利用这种结构的腔内损失调制器，也可以控制极化。还描述了使并行激光分别以其TE或TM模式操作的其它方式。

10. 发明授权

US06570898B2 Structure and method for index-guided buried heterostructure AlGalnN laser diodes 有权
公开(公告)号：US06570898B2
公开(公告)日：2003-05-27
申请号：US09408458
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

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