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1. 发明授权

US08721833B2 Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof 有权
标题翻译：包含铁电材料的可变电容室部件及其制造和使用方法
公开(公告)号：US08721833B2
公开(公告)日：2014-05-13
申请号：US13366341
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/306
CPC分类号： H01J37/32495 , H01J37/32504
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

2. 发明授权

US08501499B2 Adaptive recipe selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US08501499B2
公开(公告)日：2013-08-06
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

3. 发明授权

US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
标题翻译：动态温度背面气体控制，可提高基板内工艺的均匀性
公开(公告)号：US07674636B2
公开(公告)日：2010-03-09
申请号：US11684818
申请日：2007-03-12
申请人： Radha Sundararajan , Lee Chen , Merritt Funk
发明人： Radha Sundararajan , Lee Chen , Merritt Funk
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.
摘要翻译：提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性。

4. 发明申请

US20080223873A1 DYNAMIC CONTROL OF PROCESS CHEMISTRY FOR IMPROVED WITHIN-SUBSTRATE PROCESS UNIFORMITY 有权
标题翻译：改进基板工艺均匀性的工艺化学动态控制
公开(公告)号：US20080223873A1
公开(公告)日：2008-09-18
申请号：US11684853
申请日：2007-03-12
申请人： Lee Chen , Radha Sundararajan , Merritt Funk
发明人： Lee Chen , Radha Sundararajan , Merritt Funk
IPC分类号： C23F1/02
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32449 , Y10T137/0324 , Y10T428/215
摘要： A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.
摘要翻译：描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

5. 发明授权

US08847159B2 Ion energy analyzer 有权
标题翻译：离子能量分析仪
公开(公告)号：US08847159B2
公开(公告)日：2014-09-30
申请号：US13433071
申请日：2012-03-28
申请人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
发明人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185 , H01J49/48 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
摘要翻译：一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。离子收集器通过第一电压源耦合到入口电网。选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

6. 发明申请

US20120248311A1 ION ENERGY ANALYZER AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：离子能分析仪及其制造方法
公开(公告)号：US20120248311A1
公开(公告)日：2012-10-04
申请号：US13433088
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/16 , B23K31/02 , H01S4/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
摘要翻译：制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。处理第三衬底以形成其中具有第三通道的离子收集器。入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

7. 发明申请

US20110174606A1 Apparatus and Method for Improving Photoresist Properties Using a Quasi-Neutral Beam 有权
标题翻译：使用准中性光束改善光刻胶性能的装置和方法
公开(公告)号：US20110174606A1
公开(公告)日：2011-07-21
申请号：US12688755
申请日：2010-01-15
申请人： Merritt Funk , Lee Chen , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Radha Sundararajan
IPC分类号： B01J19/08
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/3233 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32458 , H01J37/32532 , H01J2237/338
摘要： The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).
摘要翻译：本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

8. 发明授权

US08968588B2 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法及装置
公开(公告)号：US08968588B2
公开(公告)日：2015-03-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

9. 发明申请

US20130256272A1 LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权
标题翻译：低电子温度微波表面波等离子体（SWP）处理方法和装置
公开(公告)号：US20130256272A1
公开(公告)日：2013-10-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/24 , B44C1/22 , C23C16/511 , C23C16/52
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译：表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。

10. 发明授权

US08486798B1 Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof 有权
标题翻译：包含半导体结的可变电容室部件及其制造和使用方法
公开(公告)号：US08486798B1
公开(公告)日：2013-07-16
申请号：US13366340
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/20 , H01L29/93 , H01L21/306
CPC分类号： H01J37/32807 , H01J37/32623 , H01J37/32633 , H01J37/32642
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可更换腔室元件包括被配置为在等离子体处理系统中暴露于等离子体的室部件，其中腔室部件被制造为包括半导体结，并且其中当跨越半导体施加电压时腔室部件的电容变化交界处

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