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1. 发明授权

US08501499B2 Adaptive recipe selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US08501499B2
公开(公告)日：2013-08-06
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

2. 发明授权

US08847159B2 Ion energy analyzer 有权
标题翻译：离子能量分析仪
公开(公告)号：US08847159B2
公开(公告)日：2014-09-30
申请号：US13433071
申请日：2012-03-28
申请人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
发明人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185 , H01J49/48 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
摘要翻译：一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。离子收集器通过第一电压源耦合到入口电网。选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

3. 发明申请

US20120248311A1 ION ENERGY ANALYZER AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：离子能分析仪及其制造方法
公开(公告)号：US20120248311A1
公开(公告)日：2012-10-04
申请号：US13433088
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/16 , B23K31/02 , H01S4/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
摘要翻译：制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。处理第三衬底以形成其中具有第三通道的离子收集器。入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

4. 发明授权

US08816281B2 Ion energy analyzer and methods of manufacturing the same 有权
标题翻译：离子能量分析仪及其制造方法
公开(公告)号：US08816281B2
公开(公告)日：2014-08-26
申请号：US13433088
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/16 , H01J37/32 , H05H1/00 , H01J49/48
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
摘要翻译：制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。处理第三衬底以形成其中具有第三通道的离子收集器。入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

5. 发明申请

US20120248322A1 METHODS OF ELECTRICAL SIGNALING IN AN ION ENERGY ANALYZER 有权
标题翻译：离子能量分析仪中电子信号的方法
公开(公告)号：US20120248322A1
公开(公告)日：2012-10-04
申请号：US13433078
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.
摘要翻译：一种产生用离子能分析仪表示的信号的方法，用于确定等离子体的离子能量分布。用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。

6. 发明申请

US20120252141A1 Adaptive Recipe Selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US20120252141A1
公开(公告)日：2012-10-04
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

7. 发明授权

US09087677B2 Methods of electrical signaling in an ion energy analyzer 有权
标题翻译：离子能量分析仪中电信号的方法
公开(公告)号：US09087677B2
公开(公告)日：2015-07-21
申请号：US13433078
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： H01J3/14 , H01J37/32 , H01J49/48 , H05H1/00
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.
摘要翻译：一种产生用离子能量分析仪表示的用于确定等离子体的离子能量分布的信号的方法。用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。

8. 发明申请

US20120248310A1 ION ENERGY ANALYZER 有权
标题翻译：离子能量分析仪
公开(公告)号：US20120248310A1
公开(公告)日：2012-10-04
申请号：US13433071
申请日：2012-03-28
申请人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
发明人： Lee Chen , Barton Lane , Merritt Funk , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.
摘要翻译：一种用于确定等离子体的离子能量分布并包括入口格栅，选择栅格和离子收集器的离子能量分析器。入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。离子收集器通过第一电压源耦合到入口电网。选择网格位于入口格栅和离子收集器之间，并通过第二电压源耦合到入口格栅。离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

9. 发明授权

US08721833B2 Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof 有权
标题翻译：包含铁电材料的可变电容室部件及其制造和使用方法
公开(公告)号：US08721833B2
公开(公告)日：2014-05-13
申请号：US13366341
申请日：2012-02-05
申请人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
发明人： Zhiying Chen , Jianping Zhao , Lee Chen , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/306
CPC分类号： H01J37/32495 , H01J37/32504
摘要： A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.
摘要翻译：描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

10. 发明授权

US07674636B2 Dynamic temperature backside gas control for improved within-substrate process uniformity 有权
标题翻译：动态温度背面气体控制，可提高基板内工艺的均匀性
公开(公告)号：US07674636B2
公开(公告)日：2010-03-09
申请号：US11684818
申请日：2007-03-12
申请人： Radha Sundararajan , Lee Chen , Merritt Funk
发明人： Radha Sundararajan , Lee Chen , Merritt Funk
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.
摘要翻译：提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性。

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