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1. 发明授权

US08501499B2 Adaptive recipe selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US08501499B2
公开(公告)日：2013-08-06
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/00 , H01L21/461 , H01L21/302
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

2. 发明授权

US08237928B2 Method and apparatus for identifying the chemical composition of a gas 有权
标题翻译：用于识别气体的化学成分的方法和装置
公开(公告)号：US08237928B2
公开(公告)日：2012-08-07
申请号：US13076409
申请日：2011-03-30
申请人： Joseph R. Monkowski , Barton Lane
发明人： Joseph R. Monkowski , Barton Lane
IPC分类号： G01N21/00
CPC分类号： G01N7/00 , G01N21/68
摘要： Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.
摘要翻译：本发明的实施例涉及一种或多种气体的组分的分析，例如从诸如等离子体蚀刻或等离子体增强化学气相沉积（PECVD）的半导体制造工艺中采样的气体混合物。特定的实施方案为样品的等离子体提供足够的功率，以将大量分子和分子片段解离成单独的原子。通过输送到等离子体中的足够的功率（通常为3-40W / cm 3的功率密度），大多数发射峰由单个原子的发射产生，从而产生有助于简化气体的化学组成的鉴定的光谱调查气体组分的这种精确识别可以允许精确确定正在执行的过程的阶段，特别是用于检测过程终点。

3. 发明授权

US07695984B1 Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes 有权
标题翻译：使用模拟参数实时半导体工艺测量应用于半导体工艺
公开(公告)号：US07695984B1
公开(公告)日：2010-04-13
申请号：US11409308
申请日：2006-04-20
申请人： Joseph R Monkowski , Barton Lane
发明人： Joseph R Monkowski , Barton Lane
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , H01J37/32963 , H01L22/26
摘要： Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0.25% and less of the first signal intensity.
摘要翻译：提供了用于检测等离子体蚀刻工艺的端点的方法和系统。根据一个实施例，该方法提供了具有待处理膜的半导体衬底。在一段时间内在等离子体环境中处理膜以提供器件结构。收集与等离子体处理相关的信息。该信息的特征在于第一信号强度。提取关于第一信号强度变化的信息。第一信号强度的变化具有第二信号强度。在第二信号强度下的信号强度的变化与在等离子体环境中处理膜的终点有关。第二信号强度可以是第一信号强度的约0.25％和更小。

4. 发明申请

US20100018293A1 METHOD AND APPARATUS FOR THE MEASUREMENT OF ATMOSPHERIC LEAKS IN THE PRESENCE OF CHAMBER OUTGASSING 有权
标题翻译：用于测量室外大气存在的大气泄漏的方法和装置
公开(公告)号：US20100018293A1
公开(公告)日：2010-01-28
申请号：US12509375
申请日：2009-07-24
申请人： Joseph R. Monkowski , Barton Lane
发明人： Joseph R. Monkowski , Barton Lane
IPC分类号： G01M3/04
CPC分类号： G01M3/38 , G01M3/202
摘要： Embodiments of the present invention employ measurement of argon as the means to detect the presence of an atmospheric leak in a processing chamber. Argon detected inside the process chamber is conclusive evidence of a leak. Furthermore, the amount of detected argon provides information on the rate of air entering through the leak. In one embodiment, leak detection takes place in the main plasma inside the processing chamber. In another embodiment, leak detection takes place in the self-contained plasma generated in a remote plasma sensor. Additional measurements can be performed, such as measuring the amount of oxygen, and/or the presence of moisture to help in detecting and quantifying outgassing from the processing chamber.
摘要翻译：本发明的实施例采用氩的测量作为检测处理室中大气泄漏的存在的手段。在处理室内检测到的氩是确定的泄漏证据。此外，检测到的氩气的量提供关于通过泄漏进入的空气的速率的信息。在一个实施例中，泄漏检测发生在处理室内的主等离子体中。在另一个实施例中，在远程等离子体传感器中产生的独立等离子体中发生泄漏检测。可以进行额外的测量，例如测量氧的量和/或湿气的存在，以帮助检测和定量从处理室排气。

5. 发明授权

US08816281B2 Ion energy analyzer and methods of manufacturing the same 有权
标题翻译：离子能量分析仪及其制造方法
公开(公告)号：US08816281B2
公开(公告)日：2014-08-26
申请号：US13433088
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/16 , H01J37/32 , H05H1/00 , H01J49/48
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.
摘要翻译：制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。处理第三衬底以形成其中具有第三通道的离子收集器。入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

6. 发明申请

US20120248322A1 METHODS OF ELECTRICAL SIGNALING IN AN ION ENERGY ANALYZER 有权
标题翻译：离子能量分析仪中电子信号的方法
公开(公告)号：US20120248322A1
公开(公告)日：2012-10-04
申请号：US13433078
申请日：2012-03-28
申请人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
发明人： Merritt Funk , Lee Chen , Barton Lane , Jianping Zhao , Radha Sundararajan
IPC分类号： G01T1/185
CPC分类号： H01J37/32935 , H01J49/488 , H05H1/0081 , Y10T29/49002
摘要： A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.
摘要翻译：一种产生用离子能分析仪表示的信号的方法，用于确定等离子体的离子能量分布。用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。

7. 发明授权

US07940395B2 Method and apparatus for identifying the chemical composition of a gas 有权
标题翻译：用于识别气体的化学成分的方法和装置
公开(公告)号：US07940395B2
公开(公告)日：2011-05-10
申请号：US12184574
申请日：2008-08-01
申请人： Joseph R. Monkowski , Barton Lane
发明人： Joseph R. Monkowski , Barton Lane
IPC分类号： G01N21/00
CPC分类号： G01N7/00 , G01N21/68
摘要： Embodiments of the present invention relate to the analysis of the components of one or more gases, for example a gas mixture sampled from a semiconductor manufacturing process such as plasma etching or plasma enhanced chemical vapor deposition (PECVD). Particular embodiments provide sufficient power to a plasma of the sample, to dissociate a large number of the molecules and molecular fragments into individual atoms. With sufficient power (typically a power density of between 3-40 W/cm3) delivered into the plasma, most of the emission peaks result from emission of individual atoms, thereby creating spectra conducive to simplifying the identification of the chemical composition of the gases under investigation. Such accurate identification of components of the gas may allow for the precise determination of the stage of the process being performed, and in particular for detection of process endpoint.
摘要翻译：本发明的实施例涉及一种或多种气体的组分的分析，例如从诸如等离子体蚀刻或等离子体增强化学气相沉积（PECVD）的半导体制造工艺中采样的气体混合物。特定的实施方案为样品的等离子体提供足够的功率，以将大量分子和分子片段解离成单独的原子。通过输送到等离子体中的足够的功率（通常为3-40W / cm 3的功率密度），大多数发射峰由单个原子的发射产生，从而产生有助于简化气体的化学组成的鉴定的光谱调查气体组分的这种精确识别可以允许精确确定正在执行的过程的阶段，特别是用于检测过程终点。

8. 发明申请

US20060157446A1 End point detection method for plasma etching of semiconductor wafers with low exposed area 失效
标题翻译：具有低曝光面积的半导体晶片的等离子体蚀刻的终点检测方法
公开(公告)号：US20060157446A1
公开(公告)日：2006-07-20
申请号：US11335099
申请日：2006-01-18
申请人： Sumer Johel , Barton Lane , Georges Gorin , Sylvia Spruytte , Herve Kieffel
发明人： Sumer Johel , Barton Lane , Georges Gorin , Sylvia Spruytte , Herve Kieffel
IPC分类号： G01L21/30 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32623 , H01L22/26
摘要： A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to calculate a model. During a second time period, real time data is used to calculate a version of the instant impedance of the chamber. This version of impendence is compared to a time-projected version of the model. The method determines that etching should be stopped when the received data deviates from the extrapolated model by a certain amount. In some embodiments a rolling average is used in the second time period, the rolling average compared to the model to determine the end point condition.
摘要翻译：用于控制半导体晶片的等离子体蚀刻的方法使用由传感器提供的表示电压，电流和它们之间的相位角的值来确定等离子体室的阻抗。可以使用在第一时间段期间的全部或小于所有数据来计算模型。在第二时间段期间，使用实时数据来计算腔室的即时阻抗的版本。该版本的阻止与模型的时间预测版本进行比较。该方法确定当接收的数据偏离外推模型一定量时应停止蚀刻。在一些实施例中，在第二时间段中使用滚动平均值，与模型相比，滚动平均值用于确定终点条件。

9. 发明申请

US20120252141A1 Adaptive Recipe Selector 有权
标题翻译：自适应配方选择器
公开(公告)号：US20120252141A1
公开(公告)日：2012-10-04
申请号：US13073237
申请日：2011-03-28
申请人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
发明人： Radha Sundararajan , Merritt Funk , Lee Chen , Barton Lane
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/6708 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.
摘要翻译：本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

10. 发明授权

US07757541B1 Techniques for calibration of gas flows 有权
标题翻译：气流校准技术
公开(公告)号：US07757541B1
公开(公告)日：2010-07-20
申请号：US11855052
申请日：2007-09-13
申请人： Joseph R. Monkowski , Barton Lane
发明人： Joseph R. Monkowski , Barton Lane
IPC分类号： G01F25/00
CPC分类号： G01F25/0053 , G01N21/68
摘要： An embodiment of a method in accordance with the present invention to determine the flow rate of a second gas relative to a first gas, comprises, setting a flow of a first gas to a known level, taking a first measurement of the first gas with a measurement technique sensitive to a concentration of the first gas, and establishing a flow of a second gas mixed with the first gas. A second measurement of the first gas is taken with a measurement technique that is sensitive to the concentration of the first gas, and the flow of the second gas is determined by a calculation involving a difference between the first measurement and the second measurement. In alternative embodiments, the first measurement may be taken of a flow of two or more gases combined, with the second measurement taken with one of the gases removed from the mixture. Certain embodiments of methods of the present invention may be employed in sequence in order to determine flow rates of more than two gases.
摘要翻译：根据本发明的用于确定第二气体相对于第一气体的流量的方法的实施例包括：将第一气体的流量设定为已知水平，对第一气体进行第一次测量测量技术对第一气体的浓度敏感，并建立与第一气体混合的第二气体的流动。采用对第一气体的浓度敏感的测量技术对第一气体进行第二测量，并且通过涉及第一测量和第二测量之间的差的计算来确定第二气体的流量。在替代实施例中，可以采用组合的两种或多种气体的流动进行第一测量，其中从混合物中除去气体之一进行第二测量。本发明方法的某些实施方案可以按顺序使用，以确定多于两种气体的流速。

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