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1. 发明申请

US20050221229A1 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 有权
标题翻译：用于测量衬底特性或制备用于分析的衬底的方法和系统
公开(公告)号：US20050221229A1
公开(公告)日：2005-10-06
申请号：US11086048
申请日：2005-03-22
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chuang
IPC分类号： A61N5/00 , G01N1/32 , G03C5/00 , G03F9/00 , G21G5/00 , H01J37/30
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

2. 发明授权

US08765496B2 Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 失效
标题翻译：用于测量衬底特性或制备用于分析的衬底的方法和系统
公开(公告)号：US08765496B2
公开(公告)日：2014-07-01
申请号：US12110759
申请日：2008-04-28
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chin Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy Garcia , Tzu Chin Chuang
IPC分类号： H01L21/00
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

3. 发明申请

US20080264905A1 METHODS AND SYSTEMS FOR MEASURING A CHARACTERISTIC OF A SUBSTRATE OR PREPARING A SUBSTRATE FOR ANALYSIS 失效
标题翻译：用于测量基板特性或制备用于分析的基板的方法和系统
公开(公告)号：US20080264905A1
公开(公告)日：2008-10-30
申请号：US12110759
申请日：2008-04-28
申请人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy F. Garcia , Tzu Chin Chuang
发明人： Mehran Nasser-Ghodsi , Mark Borowicz , Dave Bakker , Mehdi Vaez-Iravani , Prashant Aji , Rudy F. Garcia , Tzu Chin Chuang
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01J37/317 , G01N1/32 , H01J37/244 , H01J37/3005 , H01J2237/2814 , H01J2237/3174 , H01J2237/31745
摘要： Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.
摘要翻译：提供了用于测量基板的特性或准备用于分析的基板的方法和系统。用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。该特征可以是光致抗蚀剂特征。该方法还包括测量横截面轮廓的特性。制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。缺陷可能是地下缺陷或部分地下缺陷。制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

4. 发明授权

US08045145B1 Systems and methods for acquiring information about a defect on a specimen 有权
标题翻译：用于获取关于样本缺陷的信息的系统和方法
公开(公告)号：US08045145B1
公开(公告)日：2011-10-25
申请号：US11759090
申请日：2007-06-06
申请人： Dave Bakker , Gabor Toth , Varoujan Chakarian
发明人： Dave Bakker , Gabor Toth , Varoujan Chakarian
IPC分类号： G01N21/00
CPC分类号： G01N21/95607
摘要： Systems and methods for acquiring information about a defect on a specimen are provided. One system includes an optical subsystem configured to acquire topography information about the defect. The system also includes an electron beam subsystem configured to acquire additional information about the defect. One method includes acquiring first data for the defect using an optical technique and second data for the defect using an electron beam technique. The first and second data is acquired while the specimen is disposed in a single vacuum chamber. The method also includes determining topography information about the defect from the first data. In addition, the method includes determining additional information about the defect from the second data.
摘要翻译：提供了用于获取关于样本上的缺陷的信息的系统和方法。一个系统包括被配置为获取关于缺陷的地形信息的光学子系统。该系统还包括被配置为获取关于缺陷的附加信息的电子束子系统。一种方法包括使用光学技术获取缺陷的第一数据和使用电子束技术的缺陷的第二数据。在将样本设置在单个真空室中的同时获取第一和第二数据。该方法还包括从第一数据确定关于缺陷的形貌信息。此外，该方法包括从第二数据确定关于缺陷的附加信息。

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