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1. 发明申请

US20130001634A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20130001634A1
公开(公告)日：2013-01-03
申请号：US13611924
申请日：2012-09-12
申请人： Mayuko FUDETA , Atsuo Tsunoda
发明人： Mayuko FUDETA , Atsuo Tsunoda
IPC分类号： H01L33/32
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.

2. 发明授权

US08324639B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08324639B2
公开(公告)日：2012-12-04
申请号：US11882826
申请日：2007-08-06
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

3. 发明申请

US20080035949A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080035949A1
公开(公告)日：2008-02-14
申请号：US11882826
申请日：2007-08-06
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

4. 发明授权

US09029884B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US09029884B2
公开(公告)日：2015-05-12
申请号：US13611924
申请日：2012-09-12
申请人： Mayuko Fudeta , Atsuo Tsunoda
发明人： Mayuko Fudeta , Atsuo Tsunoda
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0075 , H01L21/027 , H01L21/28 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.
摘要翻译：氮化物半导体发光器件依次包括导电衬底，第一金属层，第二导电型半导体层，发光层和第一导电型半导体层。氮化物半导体发光器件还具有覆盖第二导电型半导体层，发光层和第一导电型半导体层的至少侧面的绝缘层。提供了制造该方法的方法。氮化物半导体发光器件还可以包括第二金属层。因此，提供了可靠的氮化物半导体发光器件及其制造方法，其中与传统示例相比，PN结部分处的短路和电流泄漏被降低。

5. 发明授权

US5310697A Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam 失效
标题翻译：一种制造AlGaInP半导体发光器件的方法，包括通过等离子体束的照射和As或P分子束的去除氧化膜的步骤
公开(公告)号：US5310697A
公开(公告)日：1994-05-10
申请号：US993058
申请日：1992-12-18
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/32325 , H01L33/0062 , H01S5/2231 , Y10S148/017 , Y10S438/974
摘要： A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.
摘要翻译：一种制造具有衬底的AlGaInP半导体发光器件的方法和包括在衬底上形成的AlGaInP第一半导体层的多层结构。该方法包括以下步骤：去除部分多层结构，使得第一半导体层被暴露，用等离子体束照射形成在暴露的第一半导体层上的氧化膜，衬底温度保持在500℃或更低，因此从第一半导体层去除氧化膜并在第一半导体层上生长第二半导体层。

6. 发明授权

US4426132A Projecting device 失效
标题翻译：投影设备
公开(公告)号：US4426132A
公开(公告)日：1984-01-17
申请号：US500804
申请日：1983-06-07
申请人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
发明人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
IPC分类号： G03B27/50 , G02B3/00 , G02B7/00 , G02B27/18 , G03B27/52
CPC分类号： G02B3/0062 , G03B27/525 , G02B3/0012 , G02B3/0056 , G02B3/0068
摘要： A projecting device is disclosed which has plural element lens systems arranged in at least two rows in a staggered fashion in two grooved blocks, with one row displaced relative to the adjacent row by a distance equal to half the pitch of the adjacent row. Each lens system is composed of at least one bar lens for imaging a part of the object as a part of the corresponding image. An opaque elastomer material fills the space between the rows for preventing light from entering into the space while allowing the positional relation between the rows to be fine-adjusted.
摘要翻译：公开了一种投影装置，其具有多个元件透镜系统，其以交错的方式布置在至少两行中的两个凹槽块中，一行相对于相邻行移位等于相邻行的间距的一半的距离。每个透镜系统由至少一个条形透镜组成，用于将物体的一部分成像为相应图像的一部分。不透明的弹性体材料填充行之间的空间，以防止光进入空间，同时允许行之间的位置关系被微调。

7. 发明授权

US4368975A Projection device 失效
标题翻译：投影设备
公开(公告)号：US4368975A
公开(公告)日：1983-01-18
申请号：US240835
申请日：1981-03-05
申请人： Yoshiya Matsui , Setsuo Minami , Noritaka Mochizuki , Isao Harumoto , Atsuo Tsunoda , Shiro Hirai , Masami Ohkubo
发明人： Yoshiya Matsui , Setsuo Minami , Noritaka Mochizuki , Isao Harumoto , Atsuo Tsunoda , Shiro Hirai , Masami Ohkubo
IPC分类号： G03B27/50 , G02B3/00 , G02B13/22 , G02B13/24 , G02B27/18 , G03G15/04 , G03G15/047 , G03B27/48
CPC分类号： G02B13/24 , G02B13/22 , G02B3/00
摘要： This specification discloses a projection device in which a plurality of element lens systems for projecting a part area of an object onto a predetermined part area on the image plane at erect one-to-one magnification are arranged parallel to one another in a plane perpendicular to the optical axis. Each element lens system is a telecentric system comprising three thin lenses of the same shape arranged in the direction of the optical axis, and an intermediate lens is provided at a position deviated from the intermediate point between the object side lens and the image plane side lens. A light absorbing member for extinguishing any light rays exceeding the effective lens diameter is provided between the lenses, and the light intensity distribution on the image plane of each element lens system is controlled substantially to Gauss distribution form by aperture eclipse and, even if there is any error in the arrangement interval, the exposure amount distribution in the arrangement direction superposed on the image plane is uniform.
摘要翻译：本说明书公开了一种投影装置，其中用于将物体的一部分区域以直立的一对一放大率在像面上的预定部分区域投影的多个元件透镜系统在垂直于...的平面中彼此平行地布置光轴。每个元件透镜系统是一种远心系统，包括沿光轴方向布置的相同形状的三个薄透镜，并且在偏离物侧透镜和像平面侧透镜之间的中间点的位置处设置中间透镜。在透镜之间设置用于熄灭超过有效透镜直径的光线的光吸收部件，并且每个元件透镜系统的像面上的光强度分布基本上由孔眼日蚀控制为高斯分布形式，并且即使存在布置间隔中的任何误差，叠加在图像平面上的排列方向上的曝光量分布是均匀的。

8. 发明申请

US20060094141A1 Method for manufacturing semiconductor laser device 失效
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20060094141A1
公开(公告)日：2006-05-04
申请号：US11262548
申请日：2005-10-28
申请人： Atsuo Tsunoda , Akiyoshi Sugahara
发明人： Atsuo Tsunoda , Akiyoshi Sugahara
IPC分类号： H01L21/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/2086 , H01S5/22 , H01S5/3211 , H01S5/34326
摘要： A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
摘要翻译：提供了一种制造半导体激光器件的方法，其中抑制了盖层和第三覆层的变形，并且去除了中间层的突出部分。通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层，不可避免地至少去除第三包层，并且在第二蚀刻步骤中蚀刻中间层和覆盖层，突出部分除去中间层，并且防止盖层被不期望地蚀刻，由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部，并且增加操作电压并减小外部微分量子防止效率。

9. 发明申请

US20050100067A1 Semiconductor laser device capable of preventing a threshold current and an operating current from increasing and manufacturing method therefor 失效
标题翻译：能够防止阈值电流和工作电流的半导体激光装置的增加和制造方法
公开(公告)号：US20050100067A1
公开(公告)日：2005-05-12
申请号：US10602827
申请日：2003-06-25
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01S5/227 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2201 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S2301/173 , H01S2304/02
摘要： A ridge section constructed of a p-type second AlGaInP clad layer 8, a p-type GaInP interlayer 9 and a p-type GaAs cap layer 10 is formed on an etching stop layer 7. A step of not smaller than 0.13 μm is formed between the p-type interlayer 9 and the p-type second clad layer 8 by making the p-type interlayer 9 protrude in both widthwise directions beyond the p-type second clad layer 8. With this step, AlInP layers can be formed separately from each other on both sides of the ridge section and on the ridge section. Therefore, when the AlInP layer on the ridge section is removed by etching, an AlInP current constriction layer 13 located on both sides of the ridge section is reliably protected by a resist film and not over-etched. The AlInP current constriction layer 13 effectively puts a current constriction function into effect, so that a semiconductor laser device of low-threshold current and low-power consumption is obtained.
摘要翻译：在蚀刻停止层7上形成由p型第二AlGaInP包覆层8，p型GaInP夹层9和p型GaAs覆盖层10构成的脊部。通过使p型中间层9在宽度方向上突出超过p型第二覆盖层8，在p型中间层9和p型第二覆盖层8之间形成不小于0.13μm的台阶。通过该步骤，AlInP层可以在脊部两侧和脊部两侧彼此分开形成。因此，当通过蚀刻去除脊部上的AlInP层时，位于脊部两侧的AlInP电流收缩层13可靠地被抗蚀剂膜保护而不被过度蚀刻。 AlInP电流收缩层13有效地使电流收缩功能起作用，从而获得低阈值电流和低功耗的半导体激光器件。

10. 发明授权

US5360762A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5360762A
公开(公告)日：1994-11-01
申请号：US080004
申请日：1993-06-21
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译：在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

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