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    • 1. 发明授权
    • Method for manufacturing semiconductor laser device
    • 制造半导体激光器件的方法
    • US07371595B2
    • 2008-05-13
    • US11262548
    • 2005-10-28
    • Atsuo TsunodaAkiyoshi Sugahara
    • Atsuo TsunodaAkiyoshi Sugahara
    • H01L21/00
    • H01S5/0425B82Y20/00H01S5/2086H01S5/22H01S5/3211H01S5/34326
    • A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
    • 提供了一种制造半导体激光器件的方法,其中抑制了盖层和第三覆层的变形,并且去除了中间层的突出部分。 通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层,不可避免地至少去除第三包层,并且在第二蚀刻步骤中蚀刻中间层和覆盖层,突出部分 除去中间层,并且防止盖层被不期望地蚀刻,由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部,并且增加操作电压并减小外部微分量子 防止效率。
    • 2. 发明申请
    • Method for manufacturing semiconductor laser device
    • 制造半导体激光器件的方法
    • US20060094141A1
    • 2006-05-04
    • US11262548
    • 2005-10-28
    • Atsuo TsunodaAkiyoshi Sugahara
    • Atsuo TsunodaAkiyoshi Sugahara
    • H01L21/00
    • H01S5/0425B82Y20/00H01S5/2086H01S5/22H01S5/3211H01S5/34326
    • A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate layer of a third cladding layer and an etching stop layer with a resist, inevitably removing at least the third cladding layer, and etching the intermediate layer and a cap layer in a second etching step, a protruding portion of the intermediate layer is removed, and the cap layer is prevented from being etched undesirably, whereby a ridge portion without irregularities with respect to a direction substantially perpendicular to a lamination direction is produced, and increase of an operation voltage and decrease of external differential quantum efficiency are prevented.
    • 提供了一种制造半导体激光器件的方法,其中抑制了盖层和第三覆层的变形,并且去除了中间层的突出部分。 通过涂覆面对第三包覆层的中间层的外周部分和具有抗蚀剂的蚀刻停止层,不可避免地至少去除第三包层,并且在第二蚀刻步骤中蚀刻中间层和覆盖层,突出部分 除去中间层,并且防止盖层被不期望地蚀刻,由此产生相对于基本上垂直于层叠方向的方向没有凹凸的脊部,并且增加操作电压并减小外部微分量子 防止效率。